Updated on 2024/12/25

Information

 

写真a

 
NISHIZAWA SHINICHI
 
Organization
Research Institute for Applied Mechanics Division of Renewable Energy Dynamics Professor
Interdisciplinary Graduate School of Engineering Sciences Department of Interdisciplinary Engineering Sciences（Concurrent）
Title
Professor
Contact information
メールアドレス
Tel
0925837294
Homepage
External link

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Nanotechnology/Materials / Applied condensed matter physics

Degree

  • Dr.Eng.

Research History

  • 1996-2000　通商産業省工業技術院電子技術総合研究所 2001-2016　国立研究開発法人産業技術総合研究所

    1996-2000　通商産業省工業技術院電子技術総合研究所 2001-2016　国立研究開発法人産業技術総合研究所

  • 1994-1995 早稲田大学理工学部応用化学科助手 2005-2006　日本大学工学部客員講師 2006-2008　スウェーデン・Linkoping大学　客員教授 2011　　　　　九州大学応用力学研究所　非常勤講師 2013-2016　九州工業大学生命体工学研究科　客員教授

Research Interests・Research Keywords

  • Research theme：/ Future Power Devices and Materials (including passive components) / Advanced Integration Technology for Future Power Electronics System / Reliability Science and Design Technology for Future Power Electronics System / Advanced Power Electronics System for Future Energy Grids

    Keyword：power electronics, integration, semiconductor

    Research period： 2017.2 - 2027.3

Awards

  • 電気学会優秀論文発表賞 （電気学会産業応用部門）

    2021.2   電気学会  

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    60-150V系フィールドプレートパワーMOSFETの損失低減に向けた設計指針

  • 講演奨励賞

    2021.1   電子情報通信学会九州支部学生講演会  

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    DCブレーカ応用のための並列SiC-MOSFET耐圧ばらつき許容範囲に関する研究

  • 電気学会優秀論文発表賞 （電気学会産業応用部門）

    2019.11   電気学会   デバイスプロセスの高温熱負荷工程におけるSi基板中の転位挙動に関する数値計算

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    デバイスプロセスの高温熱負荷工程におけるSi基板中の転位挙動に関する数値計算

  • 第66回応用物理学会春季学術講演会講演奨励賞

    2019.3   応用物理学会  

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    第66回応用物理学会春季学術講演会にて講演を行い、講演奨励賞を受賞した

Papers

  • Wafer requirement for future power devices Reviewed

    Shinichi Nishizawa

    35th IEEE Region 10 Conference, TENCON 2015 TENCON 2015 - 2015 IEEE Region 10 Conference   2016-January   2016.1

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    Language：English  

    DOI： 10.1109/TENCON.2015.7372890

  • Relationship between temperature gradient and growth rate during CZ silicon crystal growth

    Nishizawa, S

    JOURNAL OF CRYSTAL GROWTH   649   2025.1   （ ISSN:0022-0248 eISSN:1873-5002 ）

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    Publisher：Journal of Crystal Growth  

    Temperature distribution in the growing crystal is the most important parameter that determines the grown-in-defects, growth rate, etc. There is a discussion either higher growth rate leads to larger thermal gradient or smaller thermal gradient. In this study, in order to make clear the reason of this discrepancy, the effects of growth rate on the shape of melt/crystal interface, and temperature distribution in growing crystal were investigated by numerical modeling. Firstly, as increasing the growth rate, the shape of melt/crystal interface becomes more concave. And temperature gradient along center axis on growing crystal increases as increasing the growth rate. On the other hand, temperature gradient along surface of growing crystal decreases as increasing the growth rate. To obtain higher growth rate, heat transfer should be enhanced. Along the center axis, heat transfer in vertical direction by heat conduction is dominant. Then concave interface shape and larger thermal gradient along center axis were obtained. In the periphery of grown crystal near the triple points, because of concave interface shape, heat transfer in radial direction, and radiative heat transfer from growing crystal become more important than heat transfer in vertical direction. Then smaller thermal gradient along the growing crystal surface was obtained. This surface temperature profile agrees well with Abe's measurement results. It is cleared that higher growth rate leads to the higher heat transfer, and melt/crystal interface shape, and temperature distribution in growing crystal are determined by the balance of growth rate and heat transfer between heat conduction in vertical direction and heat conduction in radial direction combined with radiation heat transfer from crystal surface.

    DOI： 10.1016/j.jcrysgro.2024.127942

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  • Overvoltage Failure Process of Cascode GaN Field Effect Transistors

    Saito, W; Nishizawa, SI

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   221 ( 21 )   2024.11   （ ISSN:1862-6300 eISSN:1862-6319 ）

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    Publisher：Physica Status Solidi (A) Applications and Materials Science  

    The failure process caused by overvoltage stress in cascode GaN–field effect transistors (FETs) is discussed through single unclamped inductive switching (UIS) waveforms, burst UIS waveforms, and capacitance–voltage characteristic shifts. One of the critical disadvantages of GaN–high electron mobility transistors (HEMTs) is their lack of UIS withstand capability, primarily because there is no mechanism for removing holes generated by avalanche breakdown. The device failure is observed at the drain voltage peak in the single UIS, and sudden and random breaks are observed in the burst UIS even with the same overvoltage stress. Both hole and electron traps after the burst UIS are observed, and the failure position is at the chip edge. From these results, it is verified that cascode GaN–FETs are broken due to time-dependent dielectric breakdown of passivation films.

    DOI： 10.1002/pssa.202300791

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  • A Model of Wafer Warpage for Trench Field-Plate Power MOSFETs

    Kato, H; Cai, BZ; Yuan, JY; Miyamura, Y; Nishizawa, S; Saito, W

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   221 ( 20 )   2024.10   （ ISSN:1862-6300 eISSN:1862-6319 ）

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    Publisher：Physica Status Solidi (A) Applications and Materials Science  

    A new wafer warpage model is proposed for the full process design of trench field-plate (FP) power metal-oxide-semiconductor fileld-effect transitors (MOSFETs) using large-sized wafer. Trench FP power MOSFETs feature a deep trench and thick oxide at the wafer surface. Wafer warpage occurs due to the stress imbalance between the front and back sides of the wafer. This warpage leads to significant problems with transport errors in manufacturing equipment. This issue is expected to become even more crucial as lateral pitch narrowing is employed to reduce on-resistance. In this study, two methods are compared to estimate the warpage of a 200 mm diameter Si-wafer after trench etching and oxidation process. The mechanical stress generated by the oxidation process in several cell units is calculated using a 3D simulation. In the first approach, wafer warpage is converted from the displacement of the cell units. In the second approach, wafer warpage is estimated based on the surface film stress, which is calculated in the 3D simulation. The second approach shows good agreement with experimental results and is applicable to the 300 mm diameter Si process. This method yields more accurate measurements than the method using displacement.

    DOI： 10.1002/pssa.202400264

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  • Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress Failure

    Saito, W; Nishizawa, S

    IEEE TRANSACTIONS ON ELECTRON DEVICES   71 ( 6 )   3590 - 3595   2024.6   （ ISSN:0018-9383 eISSN:1557-9646 ）

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    Publisher：IEEE Transactions on Electron Devices  

    Failure process by overvoltage stress in GaN-HEMTs is compared between Schottky and ohmic p-gates by burst unclamped inductive switching (UIS) waveforms and C-V characteristics shift. One of the critical disadvantages of GaN-HEMTs is their lack of UIS withstanding capability because there is no removal structure of holes, which is generated by the avalanche breakdown. Although the overvoltage margin for the GaN power converters has been discussed by dynamic breakdown voltage, the failure process by overvoltage stress has not been discussed sufficiently. This article reports that overvoltage stress generates a local shunt path that depends on the gate contact. An increase in Cds is seen due to the trapping of holes generated by avalanche breakdown. These results verify that the catastrophic failure of GaN-HEMTs by overvoltage stress can be ascribed to the dielectric breakdown of hetero-epitaxial layers by hole current.

    DOI： 10.1109/TED.2024.3388383

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  • Mechanism of gate voltage spike under digital gate control at IGBT switching operations

    Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito

    Power Electronic Devices and Components   7   100054 - 100054   2024.4   （ ISSN:2772-3704 ）

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    Language：Others   Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.pedc.2023.100054

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  • Study on stress in trench structures during silicon IGBTs process-oxidation

    Cai, BZ; Yuan, JY; Miyamura, Y; Saito, W; Nishizawa, SI

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 3 )   2024.3   （ ISSN:0021-4922 eISSN:1347-4065 ）

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    Publisher：Japanese Journal of Applied Physics  

    In silicon insulated gate bipolar transistors, the trench gate structure is used to achieve smaller cell size and lower ON resistance, and thereby reduces energy loss. However, the thermal process can cause large stress near the trench and sometimes degrades device performance. This study proposed a three-dimensional model of a silicon chip with trench structures to analyze the stress distribution induced by thermal process around the trench, the scribe line, and the bottom surface of the chip. The calculated stress is in good agreement with measurement by Raman spectroscopy. The mesa top has much higher stress than the scribe line and the bottom surface. The stress depends on oxide thickness and the size scaling may reduce the stress.

    DOI： 10.35848/1347-4065/ad1e00

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  • Numerical and experimental investigation of the effect of the solid-liquid interface shape on grown-in defects in a silicon single crystal

    Suewaka, R; Saishoji, T; Nishizawa, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 3 )   2024.3   （ ISSN:0021-4922 eISSN:1347-4065 ）

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    Publisher：Japanese Journal of Applied Physics  

    The demand for grown-in defect-free wafers for high-performance silicon semiconductor devices is significantly increasing. To obtain defect-free crystals, the ratio v/G of the growth rate v to the temperature gradient G in the growth direction near the solid-liquid interface during crystal growth must be kept at a critical value ξ cri . Furthermore, ξ cri depends on the interface shape, which is interpreted as the change in the diffusion direction of point defects due to the change in the interface shape. In this study, we present a new interpretation based on simulations and experiments, in which ξ cri changes due to the effect of the diffusion direction of point defects when the solid-liquid interface shape is convex, as in the conventional interpretation, as well as the effect of thermal stress when it is concave.

    DOI： 10.35848/1347-4065/ad2d79

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  • Analysis of Surge Voltage during Turn-Off Switching of IGBTs

    Fujimoto Yuri, Nishizawa Shin-ichi, Saito Wataru

    IEEJ Transactions on Electronics, Information and Systems   144 ( 3 )   198 - 203   2024.3   （ ISSN:03854221 eISSN:13488155 ）

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    Language：Japanese   Publisher：The Institute of Electrical Engineers of Japan  

    <p>Surge voltage at IGBT turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective to improve trade-off characteristics between turn-off loss <i>E<sub>off</sub></i> and on-state voltage <i>V<sub>on</sub></i>, voltage surge is induced due to quick expanding depletion layer. Therefore, the surge voltage <i>V<sub>surge</sub></i> has also trade-off relationship with the <i>V<sub>on</sub></i> at the same <i>E<sub>off</sub></i> condition. The origin of voltage surge was analyzed using TCAD simulation, and total amount of remained hole in the drift layer during turn-off switching is a key factor for the <i>V<sub>surge</sub></i>. Narrow mesa structure and thick buffer layer are effective for improvement of trade-off characteristics between <i>V<sub>surge</sub></i> and <i>V<sub>on</sub></i>.</p>

    DOI： 10.1541/ieejeiss.144.198

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    CiNii Research

  • Turn-off switching voltage surge analysis with dependence on IGBT cell design

    Fujimoto, Y; Nishizawa, SI; Saito, W

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 2 )   2024.2   （ ISSN:0021-4922 eISSN:1347-4065 ）

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    Publisher：Japanese Journal of Applied Physics  

    Surge voltage at insulated gate bipolar transistor turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective in improving trade-off characteristics between turn-off loss E off and on-state voltage V on, voltage surge is induced due to the quickly expanding depletion layer. Therefore, the surge voltage V surge has also a trade-off relationship with V on at the same E off condition. The origin of the voltage surge was analyzed using TCAD simulation, and the total amount of remaining holes in the drift layer during turn-off switching is a key factor for the V surge. A narrow mesa structure and thick buffer layer are effective for the improvement of trade-off characteristics between V surge and V on. However, the optimum buffer layer thickness depends on the voltage-class due to the speed for punch through.

    DOI： 10.35848/1347-4065/ad106d

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  • SiC Materials and Devices for Future Green Society

    Nishizawa, S

    8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024   765 - 767   2024   （ ISBN:979-8-3503-8308-9 ）

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    Publisher：IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024  

    SiC has high expectations as a next-generation power device material and device because of its excellent semiconductor properties. This report introduces power electronics application fields in which SiC is expected to be used. SiC wafer technology, which is the starting point of the supply chain for realizing this goal, is also introduced.

    DOI： 10.1109/EDTM58488.2024.10512311

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  • Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

    Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa

    IEEE Open Journal of Power Electronics   5   392 - 401   2024   （ eISSN:2644-1314 ）

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    Publishing type：Research paper (scientific journal)   Publisher：Institute of Electrical and Electronics Engineers (IEEE)  

    DOI： 10.1109/OJPEL.2024.3365830

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  • Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN)

    Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Access   12   96936 - 96945   2024   （ ISSN:2169-3536 eISSN:2169-3536 ）

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    Publishing type：Research paper (scientific journal)   Publisher：Institute of Electrical and Electronics Engineers (IEEE)  

    DOI： 10.1109/ACCESS.2024.3427643

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  • Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker

    Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa

    Microelectronics Reliability   150   115119 - 115119   2023.11   （ ISSN:0026-2714 eISSN:1872-941X ）

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.microrel.2023.115119

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  • The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control

    Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito

    Power Electronic Devices and Components   6   100047 - 100047   2023.10   （ ISSN:2772-3704 ）

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    Language：Others   Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.pedc.2023.100047

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  • Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control

    Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito

    Power Electronic Devices and Components   6   100052 - 100052   2023.10   （ ISSN:2772-3704 ）

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    Language：Others   Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.pedc.2023.100052

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  • Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device

    Taro Takamori, Keiji Wada, Norman Boettcher, Tobias Erlbacher, Wataru Saito, Shin-ichi Nishizawa

    IEEE Transactions on Industry Applications   59 ( 5 )   6427 - 6435   2023.9   （ ISSN:0093-9994 eISSN:1939-9367 ）

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    Language：Others   Publishing type：Research paper (scientific journal)  

    This paper proposes a current limiting function for a self-sensing and self-triggering monolithically integrated SiC circuit breaker device. The proposed function provides the device not only with a fast-response current breaking operation but also with the current limiting operation, including supplying a constant current to the load and preventing the detection of inrush currents. This function is suitable for replacing mechanical conductors in initial charging circuits within rectifiers and safety equipment in case of overcurrent phenomena. The proposed method achieves certain constant currents through a simple variation of the gate-drive circuit with the adjustable parameters of an additional MOSFET. The mechanism of the current limiting function is verified using TCAD simulations based on certain conditions. Consequently, experimental results verified that the circuit breaker device with the current limiting function reduces the inrush current by up to 76.9&#x0025; using a 500 VDC distribution circuit system.

    DOI： 10.1109/TIA.2023.3288856

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  • A simple sensor device for power cycle degradation sensing

    Tatsuta Tsukamoto, Shin ichi Nishizawa, Wataru Saito

    Microelectronics Reliability   147   2023.8   （ ISSN:0026-2714 eISSN:1872-941X ）

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    Language：Others   Publishing type：Research paper (scientific journal)  

    A new sensor device is proposed for detection of power cycle degradation. Proposed sensor device is consisting of a Schottky-barrier MOSFET and the sensing principle is based on change of I-V characteristics by mechanical stress. Samples were fabricated by metal lift-off process and SiO2 gate insulator film deposition and the fundamental operation was evaluated by four-point bending test for mechanical stress applying. The fabricated device showed monotonically drain current change with number of stress cycles and about 5 times current change compared with initial current after 10,000 cycles of 4 N stress. Large current change by cyclic mechanical stress is attractive for a simple detection of power cycle degradation without expensive analog-circuits.

    DOI： 10.1016/j.microrel.2023.115068

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  • Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module

    Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Shin ichi Nishizawa, Wataru Saito

    Microelectronics Reliability   147   2023.8   （ ISSN:0026-2714 eISSN:1872-941X ）

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    The bond wire lift-off is the one of main failures for insulated gate bipolar transistors (IGBT) power modules. The wire lift-off increases parasitic inductance LeE in the module and the gate voltage Vge waveform is modulated by LeE·dIe/dt. Therefore, the Vge waveform has the potential for an indicator of condition monitoring. The Digital gate control (DGC) can control switching behavior precisely for low-loss and low-noise switching. It is also effective for sensitivity enhancement of Vge waveform changed by the wire lift-off. This paper reports how the DGC 2-step vector control (2-sVC) can improve the wire lift-off failure detection sensitivity by Vge waveform. The experiment results showed that the Vge spike was generated by LeE·dIe/dt at the turn-off switching and the spike generation timing depended on the wire number. The DGC obtained the larger timing-shift Δtwire and the amplitude ΔVge-surge than those at the conventional gate control. In addition, the best vector condition improved the trade-off between turn-off loss and collector voltage overshoot compared with the conventional gate control. From these results, the DGC is effective to enhance the sensitivity of bond wire lift-off detection by Vge waveform maintaining the best switching performance.

    DOI： 10.1016/j.microrel.2023.115067

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  • Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy

    Kaoru Kajiwara, Kazutaka Eriguchi, Kazuhiro Fusegawa, Noritomo Mitsugi, Shuichi Samata, Kazuhisa Torigoe, Kazuhiro Harada, Masataka Hourai, Shin Ichi Nishizawa

    Japanese Journal of Applied Physics   62 ( 7 )   2023.7   （ ISSN:0021-4922 eISSN:1347-4065 ）

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    Thermally activated defect behaviors in nitrogen (N)-doped Czochralski silicon (Cz-Si) single crystals were investigated using deep level transient spectroscopy and quasi-steady-state photoconductance to confirm the crystals’ applicability in insulated gate bipolar transistors (IGBTs). The thermally activated defects, which were probably N-vacancy complexes and degraded the minority carrier lifetime, were detected with extremely low densities in N-doped Cz-Si compared with N-rich floating zone Si single crystals after heat treatments at 500 °C, resulting in a high remaining value of minority carrier lifetime. The difference was assumed to come from whether vacancies were released in the Si matrix during heat treatment. For the Cz-Si, vacancies were assumed to be strongly bound with oxygen atoms with concentrations of 1017 atoms cm−3. Therefore, vacancies were not released during heat treatment, resulting in low remaining N-vacancy complex densities. N-doped Cz-Si are potential materials for IGBTs because of their low densities from thermally activated defects.

    DOI： 10.35848/1347-4065/ace011

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  • Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

    Ryota Suewaka, Toshiaki Saishoji, Shin Ichi Nishizawa

    Japanese Journal of Applied Physics   62 ( 7 )   2023.7   （ ISSN:0021-4922 eISSN:1347-4065 ）

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    Language：Others   Publishing type：Research paper (scientific journal)  

    Grown-in defect-free wafers are required in silicon semiconductor devices. A point defect concentration simulation was performed along with an experimental investigation, demonstrating a wide range of oxygen concentrations from 1.6 × 1017 to 9.1 × 1017 cm−3 in crystals. Thus, the effect of oxygen atoms in a Czochralski silicon single crystal with grown-in defect behavior was revealed. Consequently, the increasing vacancy concentration trapped by the oxygen atom (oxygen coefficient) was estimated as 4.61 × 10−5 per oxygen atom. Previously, for obtaining the oxygen coefficient, a regression equation assuming thermal equilibrium concentrations of vacancy (V) and interstitial Si (I) was applied to the experimental results. However, the interface shape, thermal stress, and hot-zone structure of the experimental level needed to be arranged; this affected the grown-in defect behavior. In this study, the oxygen coefficient and thermal equilibrium concentration of V and I were determined uniquely without arranging the situations experimental level.

    DOI： 10.35848/1347-4065/acde27

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  • Impact of Marangoni effect of oxygen on solid–liquid interface shape during Czochralski silicon growth applied with transverse magnetic field

    Ryota Suewaka, Shin ichi Nishizawa

    Journal of Crystal Growth   607   2023.4   （ ISSN:0022-0248 eISSN:1873-5002 ）

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    This study investigated the impact of the Marangoni effect of oxygen on the solid–liquid interface shape in the silicon single-crystal growth process by the transverse magnetic-field-applied Czochralski (Cz) method. To this end, the results of a 3D heat and mass transfer analysis were compared with the experimental results. The findings of the study revealed that the Marangoni effect of oxygen affected the solid–liquid interface shape predicted by the simulation. Moreover, with the introduction of this effect, both the solid–liquid interface shape and temperature distribution of the melt were found to be in good agreement with the experimental values.

    DOI： 10.1016/j.jcrysgro.2023.127123

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  • The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process

    Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, Wataru Saito, Shin Ichi Nishizawa

    7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023   2023.3   （ ISBN:979-8-3503-3252-0 ）

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    There are several thermal budget processes for Si-IGBT fabrication, which sometimes cause dislocation propagation. The dislocation propagation depends on temperature and time of the process. In this paper, we analyzed the dislocation propagation in Si wafer during Si-IGBT fabrication process. We also calculated the dislocation density during diffusion process with several temperatures and times, and we confirmed that the lower temperature process causes the smaller dislocation propagation which may carry out the good device performance.

    DOI： 10.1109/EDTM55494.2023.10103031

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  • Effect of crucible thermal conductivity on dislocation distribution in crystals in a silicon carbide physical vapor transport furnace

    Kazuma Miyazaki, Satoshi Nakano, Shin ichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   603   2023.2   （ ISSN:0022-0248 eISSN:1873-5002 ）

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    The effect of the thermal conductivity of a crucible in a silicon carbide physical vapor transport furnace on the dislocation distribution in crystal was investigated using numerical analysis. The numerical analysis includes stress and dislocation propagation calculations based on the Alexander–Haasen model. Modifying the thermal conductivity of the carbon crucible can reduce the dislocation density. It can also homogenize the temperature distribution in the radial distribution in the crystal. The density of dislocations could be further by reduced using a carbon crucible with low thermal conductivity.

    DOI： 10.1016/j.jcrysgro.2022.126981

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  • IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

    Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Access   11   6632 - 6640   2023.1   （ ISSN:2169-3536 eISSN:2169-3536 ）

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    Language：Others   Publishing type：Research paper (scientific journal)   Publisher：Institute of Electrical and Electronics Engineers (IEEE)  

    This paper clarifies the effect of gate inductance $L_{g}$ inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different $L_{g}$ were fabricated to implement double pulse tests by conventional gate driving and digital control gate driving with three-step vectors. It was found that the tradeoff between switching loss and voltage/current overshoots can be improved by digital control, but a large gate voltage spike was generated when gate-driving vectors were changed. And the spike voltage $V_{g\_{}spike}$ was positively correlated to the $L_{g}$. Although the $V_{g\_{}spike}$ can also be suppressed by decreasing the difference of gate driving vectors between the first and the second steps, the improvement of the tradeoff is weakened. Therefore, it is required that the $L_{g}$ inside the IGBT modules should be reduced to suppress the $V_{g\_{}spike}$ while improving the tradeoff by the digital gate driver at the same time. Furthermore, by analyzing the oscillation of the $V_{g\_{}spike}$ , it indicates that there should be some other stray elements, which couple $L_{g}$ and the stray capacitance inside IGBT chips, affecting the $V_{g\_{}spike}$.

    DOI： 10.1109/access.2023.3237266

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  • Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes

    Taro Takamori, Keiji Wada, Wataru Saito, Shin Ichi Nishizawa

    ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia: Green World with Power Electronics   3212 - 3216   2023   （ ISBN:9788957083505 ）

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    This paper proposes a solid-state circuit breaker with avalanche robustness during cutoff operation using series-connection of SiC diodes. Solid-state circuit breakers need to consume energy generated by energy dissipation in the wiring inductance when the cutoff operation. The proposed solid-state circuit breaker improves the cutoff current tolerance by using SiC diodes connected in series to share the avalanche energy. Furthermore, the consuming energy by the solid-state circuit breaker is reduced by maintaining a higher clamping voltage than using single SiC diode during the interruption operation. Experimental results show that the proposed solid-state circuit breaker with two series-connection SiC diodes reduces the consumed avalanche energy by 34.3% compared to using single SiC diode under the same cutoff condition. The proposed solid-state circuit breaker is investigated based on a 400 VDC distribution system with unclamped inductive switching (UIS) condition up to 50 A cutoff current.

    DOI： 10.23919/ICPE2023-ECCEAsia54778.2023.10213947

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  • Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress

    Wataru Saito, Shin Ichi Nishizawa

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2023-May   84 - 87   2023   （ ISSN:1063-6854 ISBN:9798350396829 ）

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    Failure process by overvoltage stress in GaN-HEMTs is discussed by burst UIS waveforms and C-V characteristics shift. One of the critical disadvantages of GaN-HEMTs is its lack of the UIS withstanding capability, because there is no removal structure of holes, which generated by the avalanche breakdown. Although overvoltage margin for the GaN power converters has been discussed by dynamic breakdown voltage, failure process by overvoltage stress has not been discussed sufficiently. This paper shows that overvoltage stress generated local shunt path between drain and substrate, graduated dielectric breakdown and hole trap/de-trap were observed by repetitive overvoltage stress. These results verify catastrophic failure of GaN-HEMTs by overvoltage stress is ascribed to a percolation process activated by the high-vertical electric field in hetero-epitaxial layers.

    DOI： 10.1109/ISPSD57135.2023.10147411

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  • Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests

    Zaiqi Lou, Wataru Saito, Shin ichi Nishizawa

    Microelectronics Reliability   138   2022.11   （ ISSN:0026-2714 eISSN:1872-941X ）

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    N parallel-connected SiC MOSFETs were investigated to apply to solid-state circuit breakers (SSCB), and it is an extension of a method that was proved valid by experiment of two parallel-connected SiC MOSFETs. The unclamped inductive switching (UIS) test was considered as the emergency interruption of SSCBs in this research. Because of the variations of breakdown voltage among SiC MOSFETs, the current flowing through devices is imbalanced during emergency interruption of SSCBs, which can drive some of the devices into thermal destruction prematurely. There are many compound cases for several SiC MOFETs with a certain maximum breakdown voltage variation. And the worst case, where the breakdown voltage of one device is assumed as the lowest, whereas the other devices have the same breakdown voltage, was extracted from the calculated results of four parallel-connected situation. In the worst case, it was found that the relation of breakdown voltage variations and current capacity is linear. Moreover, the distributions of breakdown voltage were taken as normal distributions. Using the worst case and distributions, a linear relation of breakdown voltage distributions and rated current of an SSCB could be concluded as a function of paralleled-connected numbers (N). Utilizing the function, the necessary breakdown voltage distributions and N of SiC MOSFETs can be evaluated for SSCBs meeting a certain yield ratio and current.

    DOI： 10.1016/j.microrel.2022.114737

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  • Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors

    Kaoru Kajiwara, Kazutaka Eriguchi, Kazuhiro Fusegawa, Noritomo Mitsugi, Shuichi Samata, Kazuhisa Torigoe, Kazuhiro Harada, Masataka Hourai, Shin-Ichi Nishizawa

    IEEE Transactions on Semiconductor Manufacturing   35 ( 4 )   620 - 625   2022.11   （ ISSN:0894-6507 eISSN:1558-2345 ）

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    Nitrogen-doped silicon wafers manufactured using the Czochralski technique (Cz-Si) with an oxygen concentration (OI) of 2.5&#x2013;5.6 &#x00D7; 1017 atoms cm-3 are heat treated to simulate the conventional and scaled manufacturing processes of insulated gate bipolar transistors (IGBTs). Subsequently, the oxygen precipitation, lifetime, and gate oxide integrity (GOI) of the Cz-Si wafers are evaluated. After the high-temperature heat treatment that simulates the conventional process, the lifetime of the Cz-Si with an OI of 5.6 &#x00D7; 1017 atoms cm-3 only degrades slightly even when oxide precipitates are not detected. In contrast, after the low-temperature heat treatment that simulates the scaled process, oxide precipitates are detected and the lifetime reduces substantially at an OI of 5.6 &#x00D7; 1017 atoms cm-3. The Cz-Si with OI values below 3.3 &#x00D7; 1017 atoms cm-3 are considered suitable materials for IGBTs because no oxide precipitate is formed, and the lifetime is not degraded after high-and low-temperature heat treatments. Upon using GOI evaluation, the nitrogen-doped Cz-Si wafers are found to exhibit a breakdown voltage equal to that of an annealed Cz-Si wafer conventionally used for IGBTs. Therefore, nitrogen-doped Cz-Si wafers with OI below 3.3 &#x00D7; 1017 atoms cm-3 are potential materials for conventional and scaled IGBTs.

    DOI： 10.1109/TSM.2022.3199862

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  • Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor

    Wataru Saito, Zaiqi Lou, Shin-Ichi NIshizawa

    IEEE Transactions on Electron Devices   69 ( 10 )   5671 - 5677   2022.10   （ ISSN:0018-9383 eISSN:1557-9646 ）

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Unclamped inductive switching (UIS) robustness of SiC devices with parallel-connected varistor was evaluated to design the cutoff current capability of solid-state circuit breakers (SSCBs). Because the operation of UIS tests is similar to that in the interruption of SSCBs, UIS tests of SiC devices without varistor and with a parallel-connected varistor were implemented. It was found that the cutoff current of SiC devices with the varistor was much larger than that without varistor. The effect of varistor on the increase of cutoff current depended on the device type and rating current. The cutoff current was 3-6 times higher for planar MOSFETs and 5-10 times higher for trench MOSFETs compared with no varistor condition. In contrast, the effect of varistor for JFET was small because the gate drive condition strongly affected the current switching time from SiC-JFET to varistor. The index of rating current for cutoff current capability was changed by parallel varistor connection because the destruction mechanism of SiC devices was changed because of the change in self-heating timing during the UIS.

    DOI： 10.1109/TED.2022.3200637

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  • Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Journal of the Electron Devices Society   10   512 - 515   2022.10   （ ISSN:2168-6734 eISSN:2168-6734 ）

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Institute of Electrical and Electronics Engineers ({IEEE})  

    A new parameter optimization method using zoomed response surface (RS) is proposed for automatic design of low-voltage power MOSFET. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a simple design method using zoomed RS. Five parameters were automatically designed, taking account to process margin with simulation number of 130 only.

    DOI： 10.1109/JEDS.2022.3187151

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  • Scaling Design Effects on Surface Buffer IGBT Characteristics

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Journal of the Electron Devices Society   10   23 - 28   2022.10   （ ISSN:2168-6734 ）

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Institute of Electrical and Electronics Engineers ({IEEE})  

    Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation. Although the scaling design improves turn-off loss and on-state voltage drop V-ce(sat) trade-off due to injection enhancement (IE) effect, turn-on surge current is increased by the enhancement of negative gate capacitance due to thin gate oxide. Dual gate control improves turn-on switching controllability by hole current path control. Short circuit robustness is improved by the scaling design, because the saturation current is decreased with the scaling design due to pinch-off of the n-MOS channel. From these results, the scaling design is effective in improving the SB-IGBT characteristics including high robustness.

    DOI： 10.1109/JEDS.2021.3129162

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  • Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device

    Taro Takamori, Keiji Wada, Norman Boettcher, Tobias Erlbacher, Wataru Saito, Shin Ichi Nishizawa

    2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022   2022.10   （ ISSN:2329-3721 ISBN:978-1-7281-9387-8 ）

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    This paper proposes a current limit feature for a multi-functional SiC circuit breaker device with a “dual thyristor” structure. The proposed feature provides the device not only with a fast-response current breaking operation but also with the current limiting function, including supplying a constant current to the load and preventing the detection of inrush currents. The proposed feature is suitable for replacing mechanical circuit breakers in initial charging circuits for the rectifiers and a safety equivalent in case of overcurrent accidents. The proposed method achieves various constant currents by simply varying the gate-drive circuit with adjustable parameters of an additional MOSFET. Experimental results verified that the device with the current limit feature reduces the inrush current to up to 22.6% of capacitive load condition using a 500 VDC circuit system.

    DOI： 10.1109/ECCE50734.2022.9948054

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  • Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition

    Wataru Saito, Zaiqi Lou, Shin Ichi Nishizawa

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022   2022.9   （ ISBN:978-1-6654-8814-3 ）

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    Unclamped inductive switching (UIS) robustness of SiC MOSFETs with parallel connected varistor was evaluated to design the cutoff current capability of solid-state circuit breakers. Because the operation of UIS tests is similar to that in the interruption of solid-state circuit breakers, UIS tests of SiC MOSFETs without varistor and with a parallel-connected varistor were implemented. It was found that the cutoff current of SiC MOSFETs with the varistor was 3 to 6 times larger than that without varistor. The index of rating current for cutoff current capability was changed by parallel varistor connection, because the destruction mechanism of SiC MOSFETs was changed because of the change in self-heating timing during the UIS. From dependence of cutoff current on rating current, load inductance and varistor voltage, it is verified that the cutoff current of SiC MOSFET with varistor was limited by saturation current and current filament.

    DOI： 10.1109/WiPDAEurope55971.2022.9936060

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  • Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v

    Norman Boettcher, Taro Takamori, Keiji Wada, Wataru Saito, Shin Ichi Nishizawa, Tobias Erlbacher

    24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe   2022.9

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  • Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v

    Norman Boettcher, Taro Takamori, Keiji Wada, Wataru Saito, Shin Ichi Nishizawa, Tobias Erlbacher

    24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe   2022.9   （ ISBN:9789075815399 ）

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    This paper presents the short circuit performance of a novel SiC circuit breaker device, which is based on the 'thyristor dual' functionality. The developed device structure is motivated with regard to manufacturing aspects and electrical requirements. Furthermore, the basic 'thyristor dual' operation is elaborated on the basis of quasi-static electrical measurements of a fabricated prototype. The proposed self-sensing and self-triggering devices make auxiliary circuitry like sensors and micro-controllers expendable and practically have no propagation delay. As a result, short circuit clearance within 122 ns at 800 V is demonstrated in experiments. Moreover, by utilisation of a third device terminal, a temporary current limiter functionality can be obtained. The scalability of the current limit value is discussed on the basis of measurements in time domain. The maximum current limit value achieved is 7.4 times higher than the trigger current level of the circuit breaker device. Additionally, the same circuit configuration which is used for the current limiting mode, allows to remotely reset the circuit breaker after it turned to blocking-state. This opens up a wide range of possibilities to enhance the circuit breaker with intelligent functionalities.

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  • Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device

    Norman Boettcher, Taro Takamori, Keiji Wada, Wataru Saito, Shin Ichi Nishizawa, Tobias Erlbacher

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2022-May   261 - 264   2022.5   （ ISSN:1063-6854 ISBN:978-1-6654-2201-7 ）

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    This work presents the switching performance of a novel solid-state circuit breaker device suitable for DC-applications up to 800 V. These "dual thyristor"devices are manufactured employing a 4H-SiC JFET technology. With respect to scalability, the influence of specific design parameters on the quasi-static output characteristics are discussed along with corresponding fabrication aspects. In order to investigate the switching performance, clamped and unclamped inductive switching (CIS and UIS) experiments at up to 800 V are carried out. In case of CIS, current clearance is achieved within 642 ns after the self-sensed trigger event at 1.75 A. The UIS experiments reveal stable current handling capability during avalanche.

    DOI： 10.1109/ISPSD49238.2022.9813628

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  • Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs

    Wataru Saito, Shin-ichi Nishizawa

    2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)   2022-May   53 - 56   2022.5   （ ISSN:1063-6854 ISBN:978-1-6654-2201-7 ）

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    Design of trench gate and p-column position in Superjunction (SJ)-IGBTs are discussed to improve the trade-off characteristics between surge voltage/current and turn-off/-on losses. Power electronics systems require not only low power loss but also low EMI noise for high cost performance by system downsizing. Although SJ-IGBTs are attractive for low loss operation due to thin drift layer and fast removal of the excess carriers through the p- and n-columns at the turn-off operation, the switching trade-off characteristics of SJ-IGBTs compared with the conventional IGBT and the improvement design have not been discussed sufficiently. This paper shows better switching trade-off compared with a conventional IGBT can be obtained by the trench gate and p-column designs due to management of the gate capacitance and hole current flow, because negative gate capacitance influences on not only turn-on switching but also turn-off switching.

    DOI： 10.1109/ISPSD49238.2022.9813643

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  • Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode as Avalanche Voltage Clamping

    Taro Takamori, Keiji Wada, Wataru Saito, Shin Ichi Nishizawa

    Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC   225 - 229   2022.3   （ ISSN:1048-2334 ISBN:978-1-6654-0689-5 ）

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    This paper proposes a solid-state DC circuit breaker composed of SiC MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. To realize a solid-state DC circuit breaker, it is necessary to reduce the conduction loss and increase the breaking capability. A parallel connection of power semiconductor devices is the most suitable configuration that can meet these requirements. However, in such a configuration, the current balance during current interruption may be affected by the difference in the breakdown voltage characteristics of the power semiconductor devices. The proposed solid-state DC circuit breaker is clamped using a SiC merged pin Schottky diode with high avalanche tolerance and robust characteristics under repetitive avalanche events. Experimental results from an unclamped inductive switching test circuit with a 400-V DC distribution system show that the proposed solid-state DC circuit breaker can interrupt currents up to 50-A.

    DOI： 10.1109/APEC43599.2022.9773380

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  • The Effect of Parallel-Connected Varistor on UIS Robustness of SiC MOSFETs for Solid-State Circuit Breakers Application

    Zaiqi Lou, Yunjie Zhu, Shin Ichi Nishizawa, Wataru Saito

    ETG-Fachbericht   2022-March ( 165 )   175 - 179   2022.3

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  • The Effect of Parallel-Connected Varistor on UIS Robustness of SiC MOSFETs for Solid-State Circuit Breakers Application

    Zaiqi Lou, Yunjie Zhu, Shin Ichi Nishizawa, Wataru Saito

    ETG-Fachbericht   2022-March ( 165 )   175 - 179   2022.3   （ ISSN:0341-3934 ）

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    This paper aims to clarify the effect of parallel-connected varistor on unclamped inductive switching (UIS) robustness of SiC MOSFETs to improve the cut-off current capability of solid-state circuit breakers (SSCB). Because the operation of UIS tests is similar to that in the interruption of SSCB, UIS tests of SiC MOSFETs without varistor and with a parallel-connected varistor were implemented. It was found that the cut-off current of SiC MOSFETs with the varistor is much larger than that of SiC MOSFETs without varistor. The effect of varistor on increase of cut-off current depends on the MOS-gate type. The cut-off current is 3-5 times higher for planar-gate devices and 5-10 times higher for trench-gate devices compared with no varistor condition. To analyze mechanism of cut-off current increased by the varistor, the junction temperature in UIS tests with and without the varistor was estimated by simulation using experimental wave-forms. The simulation results show that the destruction mechanism of SiC MOSFETs is changed by varistor connection due to change of self-heating timing during the UIS.

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  • Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Wataru Saito, Shin Ichi Nishizawa

    Japanese Journal of Applied Physics   61 ( SC )   2022.2   （ ISSN:0021-4922 eISSN:1347-4065 ）

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    In this paper, the turn-on characteristics of the 1.2 kV Trench IGBT (TIGBT) and the 1.2 kV Trench Clustered IGBT (TCIGBT) are investigated through TCAD simulations and experiments. The TCIGBT shows much lower turn-on energy loss (E on) due to higher current gain than an equivalent TIGBT and the negative gate capacitance effect is effectively suppressed in the TCIGBT by its self-clamping feature and PMOS action. In addition, the impact of 3D scaling rules on the turn-on performance of TIGBT and TCIGBT is analyzed in detail. Simulation results show that scaling rules result in a significant reduction of E on in both TIGBT and TCIGBT. Furthermore, the experimental results indicate that TCIGBT technology is well suited for high current density operations with low power losses. Compared to the state-of-the-art IGBT technology, an 18% reduction of total power loss can be achieved by the TCIGBT operated at 300 A cm-2 and 175 °C.

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  • The Effect of Parallel-Connected Varistor on UIS Robustness of SiC MOSFETs for Solid-State Circuit Breakers Application

    Lou Z., Zhu Y., Nishizawa S.I., Saito W.

    ETG-Fachbericht   2022-March ( 165 )   175 - 179   2022   （ ISSN:03413934 ）

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    This paper aims to clarify the effect of parallel-connected varistor on unclamped inductive switching (UIS) robustness of SiC MOSFETs to improve the cut-off current capability of solid-state circuit breakers (SSCB). Because the operation of UIS tests is similar to that in the interruption of SSCB, UIS tests of SiC MOSFETs without varistor and with a parallel-connected varistor were implemented. It was found that the cut-off current of SiC MOSFETs with the varistor is much larger than that of SiC MOSFETs without varistor. The effect of varistor on increase of cut-off current depends on the MOS-gate type. The cut-off current is 3-5 times higher for planar-gate devices and 5-10 times higher for trench-gate devices compared with no varistor condition. To analyze mechanism of cut-off current increased by the varistor, the junction temperature in UIS tests with and without the varistor was estimated by simulation using experimental wave-forms. The simulation results show that the destruction mechanism of SiC MOSFETs is changed by varistor connection due to change of self-heating timing during the UIS.

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  • Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v

    Boettcher N., Takamori T., Wada K., Saito W., Nishizawa S.I., Erlbacher T.

    24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe   2022   （ ISBN:9789075815399 ）

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    Publisher：24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe  

    This paper presents the short circuit performance of a novel SiC circuit breaker device, which is based on the 'thyristor dual' functionality. The developed device structure is motivated with regard to manufacturing aspects and electrical requirements. Furthermore, the basic 'thyristor dual' operation is elaborated on the basis of quasi-static electrical measurements of a fabricated prototype. The proposed self-sensing and self-triggering devices make auxiliary circuitry like sensors and micro-controllers expendable and practically have no propagation delay. As a result, short circuit clearance within 122 ns at 800 V is demonstrated in experiments. Moreover, by utilisation of a third device terminal, a temporary current limiter functionality can be obtained. The scalability of the current limit value is discussed on the basis of measurements in time domain. The maximum current limit value achieved is 7.4 times higher than the trigger current level of the circuit breaker device. Additionally, the same circuit configuration which is used for the current limiting mode, allows to remotely reset the circuit breaker after it turned to blocking-state. This opens up a wide range of possibilities to enhance the circuit breaker with intelligent functionalities.

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  • Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V

    Boettcher, N; Takamori, T; Wada, K; Saito, W; Nishizawa, SI; Erlbacher, T

    2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE)   2022   （ ISSN:2325-0313 ISBN:978-9-0758-1539-9 ）

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  • Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection

    Mitsuhiko Sagara, Keiji Wada, Shin ichi Nishizawa, Wataru Saito

    Microelectronics Reliability   126   2021.11

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    DOI： 10.1016/j.microrel.2021.114237

  • Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to olid-state circuit breakers

    Zaiqi Lou, Keiji Wada, Wataru Saito, Shin ichi Nishizawa

    Microelectronics Reliability   126   2021.11

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    DOI： 10.1016/j.microrel.2021.114270

  • Modeling and simulation of si IGBTs. Paper presented at the International Conference on Simulation of Semiconductor Processes and Devices, Reviewed International journal

    Shigyo, N., Watanabe, M., Kakushima, K., Hoshii, T., Furukawa, K., Nakajima, A. Nakajima , K. Satoh , T. Matsudai, T. Saraya , T. Takakura , K. Itou , M. Fukui , S. Suzuki , K. Takeuchi , I. Muneta , H. Wakabayashi , Nishizawa,S., K. Tsutsui , T. Hiramoto , H. Ohashi Iwai, H.

    SISPAD   129 - 132   2021.9

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    DOI： doi:10.23919/SISPAD49475.2020.9241627

  • Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

    Taichi Ogawa, Wataru Saito, Shin-Ichi Nishizawa

    IEEE Journal of the Electron Devices Society   9   552 - 556   2021.9

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    DOI： 10.1109/JEDS.2021.3079396

  • Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

    Kaoru Kajiwara, Kazuhisa Torigoe, Kazuhiro Harada, Masataka Hourai, Shin ichi Nishizawa

    Journal of Crystal Growth   570   2021.9

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    DOI： 10.1016/j.jcrysgro.2021.126236

  • Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transisto Reviewed International journal

    Yokogawa, R., Kobayashi, H., Numasawa, Y., Ogura, A., Nishizawa,S., Saraya, T., K.Itoh, T.Takakura, S.Suzuki, M.Fuui, K.Takeuchi and Hiramoto, T

    Japanese Journal of Applied Physics   59 ( 11 )   115503   2021.6

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    DOI： doi:10.35848/1347-4065/abc1d0

  • Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Electron Device Letters   42 ( 6 )   907 - 910   2021.6

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    DOI： 10.1109/LED.2021.3075657

  • Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

    Wataru Saito, Shin Ichi Nishizawa

    IEEE Electron Device Letters   42 ( 6 )   907 - 910   2021.6

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    DOI： 10.1109/LED.2021.3075657

  • Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals Reviewed International journal

    Kaoru Kajiwara, Kazuhisa Torigoe, Kazuhiro Harada, Masataka Hourai, Shin-ichi Nishizawa

    Journal of Crystal Growth   570 ( (2021) )   126236   2021.6

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  • A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit

    Taichi Ogawa, Wataru Saito, Shin Ichi Nishizawa

    Japanese Journal of Applied Physics   60 ( SB )   2021.5

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    DOI： 10.35848/1347-4065/abe801

  • Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology

    Wataru Saito, Shin Ichi Nishizawa

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2021-May   271 - 274   2021.5

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    DOI： 10.23919/ISPSD50666.2021.9452240

  • Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

    Zaiqi Lou, Wataru Saito, Shin Ichi Nishizawa

    Japanese Journal of Applied Physics   60 ( SB )   2021.5

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    DOI： 10.35848/1347-4065/abebc1

  • Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

    M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

    2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021   2021.4

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    DOI： 10.1109/EDTM50988.2021.9420922

  • A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit Reviewed International journal

    Taichi Ogawa , Wataru Saito and Shin-ichi Nishizawa

    Japanese Journal of Applied Physics   60   SBBD16-1 - SBBD16-5   2021.3

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    DOI： 10.35848/1347-4065/abe801

  • Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Transactions on Power Electronics   36 ( 3 )   3304 - 3311   2021.3

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    DOI： 10.1109/TPEL.2020.3014560

  • Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Transactions on Power Electronics   36 ( 3 )   3304 - 3311   2021.3

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    DOI： 10.1109/tpel.2020.3014560

  • Carbon monoxide concentrations in a Czochralski growth furnace

    Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, K. Kakimoto

    Journal of Crystal Growth   558   2021.3

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    DOI： 10.1016/j.jcrysgro.2020.126015

  • Carbon monoxide concentrations in a czochralski growth furnace Reviewed International journal

    Miyamura, Y., Harada, H., Nakano, Nishizawa,S. & Kakimoto, K.

    Journal of Crystal Growth   558 ( 15 )   126015   2021.3

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    DOI： doi:10.1016/j.jcrysgro.2020.126015

  • Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Transactions on Power Electronics   36 ( (3) )   3304 - 3311   2021.3

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  • Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test Reviewed International journal

    Lou, Z., Saito, W. and Nishizawa,S.

    Japanese Journal of Applied Physics, 60, SBBD18(2021)   2021.3

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    Language：Japanese   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.35848/1347-4065/abebc1

  • 3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

    T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

    Technical Digest - International Electron Devices Meeting, IEDM   2020-December   5.3.1 - 5.3.4   2020.12

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    DOI： 10.1109/IEDM13553.2020.9371909

  • Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Electron Device Letters   41 ( 12 )   1814 - 1816   2020.12

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    DOI： 10.1109/LED.2020.3034898

  • Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Electron Device Letters   41 ( 12 )   1814 - 1816   2020.12

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/led.2020.3034898

  • Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode Reviewed

    Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa

    Microelectronics Reliability   114   113776 - 113776   2020.11

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.microrel.2020.113776

  • Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

    Ryo Yokogawa, Hiroto Kobayashi, Yohichiroh Numasawa, Atsushi Ogura, Shin-ichi Nishizawa, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shinichi Suzuki, Munetoshi Fukui, Kiyoshi Takeuchi, Toshiro Hiramoto

    Japanese Journal of Applied Physics   59 ( 11 )   2020.11

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    DOI： 10.35848/1347-4065/abc1d0

  • Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

    Ryo Yokogawa, Hiroto Kobayashi, Yohichiroh Numasawa, Atsushi Ogura, Shin-ichi Nishizawa, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shinichi Suzuki, Munetoshi Fukui, Kiyoshi Takeuchi, Toshiro Hiramoto

    Japanese Journal of Applied Physics   59 ( 11 )   115503 - 115503   2020.11

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    DOI： 10.35848/1347-4065/abc1d0

  • Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices Reviewed

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Transactions on Electron Devices   67 ( 9 )   3691 - 3697   2020.9

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    DOI： 10.1109/ted.2020.3007594

  • Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-Ichi Nishizawa, Wataru Saito

    IEEE Transactions on Electron Devices   67 ( 9 )   3691 - 3697   2020.9

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    DOI： 10.1109/TED.2020.3007594

  • Modeling and simulation of Si IGBTs

    N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD   2020-September   129 - 132   2020.9

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    DOI： 10.23919/SISPAD49475.2020.9241627

  • High Switching Controllability Trench Gate Design in Si-IGBTs Reviewed International journal

    Wataru Saito, Shin Ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020   2020-September   447 - 450   2020.9

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    DOI： 10.1109/ISPSD46842.2020.9170118

  • Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

    32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020   2020-September   470 - 473   2020.9

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    DOI： 10.1109/ISPSD46842.2020.9170129

  • Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization Reviewed International journal

    Ryohei Sato, Koichi Kakimoto, Wataru Saito, Shin Ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020   2020-September   494 - 497   2020.9

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    DOI： 10.1109/ISPSD46842.2020.9170035

  • Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance Reviewed

    Wataru Saito, Shin-ichi Nishizawa

    IEEE Transactions on Electron Devices   67 ( 8 )   3285 - 3290   2020.8

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    DOI： 10.1109/TED.2020.3002510

  • High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

    PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings   176 - 180   2020.8

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  • Surface Buffer IGBT for High Total Performance

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Transactions on Electron Devices   67 ( 8 )   3263 - 3269   2020.8

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/TED.2020.2999874

  • Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

    Wataru Saito, Shin-Ichi Nishizawa

    IEEE Transactions on Electron Devices   67 ( 8 )   3285 - 3290   2020.8

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/TED.2020.3002510

  • Surface Buffer IGBT for High Total Performance Reviewed

    Wataru Saito, Shin-ichi Nishizawa

    IEEE Transactions on Electron Devices   67 ( 8 )   3263 - 3269   2020.8

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    DOI： 10.1109/TED.2020.2999874

  • Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off Reviewed

    Wataru Saito, Shin-ichi Nishizawa

    IEEE Electron Device Letters   41 ( 7 )   1060 - 1062   2020.7

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    DOI： 10.1109/LED.2020.2991927

  • On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness

    Taichi Ogawa, Wataru Saito, Shin-Ichi Nishizawa

    IEEE Electron Device Letters   41 ( 7 )   1063 - 1065   2020.7

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    DOI： 10.1109/LED.2020.3000239

  • On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness Reviewed

    Taichi Ogawa, Wataru Saito, Shin-ichi Nishizawa

    IEEE Electron Device Letters   41 ( 7 )   1063 - 1065   2020.7

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    DOI： 10.1109/LED.2020.3000239

  • CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss Reviewed

    110   2020.7

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    This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.

    DOI： 10.1016/j.microrel.2020.113635

  • High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ichi Nishizawa, Wataru Saito

    2020 IEEE Applied Power Electronics Conference and Exposition (APEC)   2020-March   686 - 689   2020.6

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    DOI： 10.1109/APEC39645.2020.9124293

  • N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature Over 448 K

    Katsumi Nakamura, Shin-Ichi Nishizawa, Akihiko Furukawa

    IEEE Transactions on Electron Devices   67 ( 6 )   2437 - 2444   2020.6

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    DOI： 10.1109/TED.2020.2990387

  • N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature over 448 K Reviewed

    Katsumi Nakamura, Shin Ichi Nishizawa, Akihiko Furukawa

    IEEE Transactions on Electron Devices   67 ( 6 )   2437 - 2444   2020.6

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    DOI： 10.1109/TED.2020.2990387

  • Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Reviewed

    Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

    IEEE Transactions on Semiconductor Manufacturing   33 ( 2 )   159 - 165   2020.5

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    DOI： 10.1109/TSM.2020.2972369

  • Editorial Reviewed

    Jeffrey J. Derby, Koichi Kakimoto, Shin ichi Nishizawa

    Journal of Crystal Growth   538   2020.5

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    DOI： 10.1016/j.jcrysgro.2020.125594

  • Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs Reviewed

    Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin Ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto

    Japanese Journal of Applied Physics   59 ( SG )   2020.4

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    DOI： 10.35848/1347-4065/ab7414

  • Evaluation of SiC-MOSFET by repetitive UIS tests for solid state circuit breaker Reviewed International journal

    Mitsuhiko Sagara, Keiji Wada, Shin-ichi Nishizawa

    International Conference on Silicon Carbide and Related Materials 2019   1004 MSF   1010 - 1015   2020.3

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    Language：English   Publishing type：Research paper (international conference proceedings)  

    DOI： 10.4028/www.scientific.net/MSF.1004.1010

  • Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon Reviewed

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue feng Han, Satoshi Nakano, Shin ichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   532   2020.2

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    DOI： 10.1016/j.jcrysgro.2019.125404

  • Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model Reviewed

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue feng Han, Satoshi Nakano, Shin ichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   532   2020.2

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.jcrysgro.2019.125405

  • Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

    65th Annual IEEE International Electron Devices Meeting, IEDM 2019   2019-December   2019.12

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    DOI： 10.1109/IEDM19573.2019.8993596

  • Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications Reviewed

    Katsumi Nakamura, Fumihito Masuoka, Akito Nishii, Shin Ichi Nishizawa, Akihiko Furukawa

    IEEE Transactions on Electron Devices   66 ( 11 )   4842 - 4849   2019.11

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    DOI： 10.1109/TED.2019.2941710

  • Switching of 3300v scaled igbt by 5v gate drive Invited Reviewed International journal

    T. Hiramoto, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, T. Sarava, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa

    13th IEEE International Conference on ASIC, ASICON 2019   2019.10

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    DOI： 10.1109/ASICON47005.2019.8983633

  • Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test Reviewed

    Mitsuhiko Sagara, Keiji Wada, Shin ichi Nishizawa

    Microelectronics Reliability   100-101   2019.9

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    DOI： 10.1016/j.microrel.2019.113417

  • Effect of nitrogen and aluminium on silicon carbide polytype stability Reviewed

    Shinichi Nishizawa, F.Mercier

    Journal of Crystal Growth   518   99 - 102   2019.7

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    DOI： 10.1016/j.jcrysgro.2019.04.018

  • Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates Reviewed

    Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui

    Japanese Journal of Applied Physics   58 ( 6 )   061006 - 061006   2019.6

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    DOI： 10.7567/1347-4065/ab1c78

  • A Condition-Monitoring Method of DC-Link Capacitors Used in a High-Power Three-Phase PWM Inverter with an Evaluation Circuit Reviewed International journal

    Kazunori Hasegawa, Shinichi Nishizawa, Ichiro Omura

    IEEJ Journal of Industry Applications   8 ( 3 )   480 - 487   2019.5

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    DOI： 10.1541/ieejjia.8.480

  • Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

    Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-Ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai

    2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)   311 - 314   2019.5

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    DOI： 10.1109/ispsd.2019.8757640

  • 3300V Scaled IGBTs Driven by 5V Gate Voltage

    Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

    2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)   43 - 46   2019.5

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    DOI： 10.1109/ispsd.2019.8757626

  • Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

    Kobayashi, Hiroto, Yokogawa, Ryo, Kinoshita, Kosuke, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shin-ichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   58   2019.4

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    DOI： 10.7567/1347-4065/aafd90

  • Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

    Kobayashi, Hiroto, Yokogawa, Ryo, Kinoshita, Kosuke, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shin-ichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   58   2019.4

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    DOI： 10.7567/1347-4065/aafd90

  • Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs Reviewed International journal

    K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, Shinichi Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

    32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019   98 - 101   2019.3

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    DOI： 10.1109/ICMTS.2019.8730922

  • In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals Reviewed

    Y. Miyamura, H. Harada, X. Liu, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   507   154 - 156   2019.2

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    DOI： 10.1016/j.jcrysgro.2018.11.017

  • Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Reviewed

    T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, Shinichi Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

    64th Annual IEEE International Electron Devices Meeting, IEDM 2018 2018 IEEE International Electron Devices Meeting, IEDM 2018   8.4.1 - 8.4.4   2019.1

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    DOI： 10.1109/IEDM.2018.8614491

  • Trend in thermal resistance of advanced power modules Reviewed International journal

    Nobuyuki Shishido, Masanori Tsukuda, Shin Ichi Nishizawa

    International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2019   104 - 108   2019.1

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  • New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment Reviewed

    K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

    32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018   105 - 106   2018.10

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    DOI： 10.1109/VLSIC.2018.8502399

  • Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately Reviewed

    T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

    48th European Solid-State Device Research Conference, ESSDERC 2018 2018 48th European Solid-State Device Research Conference, ESSDERC 2018   26 - 29   2018.10

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    DOI： 10.1109/ESSDERC.2018.8486870

  • Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth Reviewed

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue feng Han, Satoshi Nakano, Shinichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   499   8 - 12   2018.10

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    DOI： 10.1016/j.jcrysgro.2018.07.020

  • ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier Reviewed International journal

    K. Hasegawa, Shinichi Nishizawa, I. Omura

    Microelectronics Reliability   88-90   433 - 437   2018.9

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    DOI： 10.1016/j.microrel.2018.07.023

  • Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals? Reviewed

    Y. Miyamura, H. Harada, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   489   1 - 4   2018.5

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    DOI： 10.1016/j.jcrysgro.2018.02.034

  • An Evaluation Circuit for DC-Link Capacitors Used in a High-Power Three-Phase Inverter with Condition Monitoring

    Kazunori Hasegawa, Ichiro Omura, Shin-ichi Nishizawa

    2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA)   1938 - 1942   2018.5

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  • GaN-based complementary metal-oxide- semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels Reviewed

    Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Shinichi Nishizawa, Hiromichi Ohashi

    IET Power Electronics   11 ( 4 )   689 - 694   2018.4

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    DOI： 10.1049/iet-pel.2017.0376

  • DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors Reviewed

    K. Hasegawa, K. Tsuzaki, Shinichi Nishizawa

    Microelectronics Reliability   83   115 - 118   2018.4

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    DOI： 10.1016/j.microrel.2018.02.012

  • Relationship between carbon concentration and carrier lifetime in CZ-Si crystals Reviewed

    Y. Miyamura, H. Harada, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   486   56 - 59   2018.3

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    DOI： 10.1016/j.jcrysgro.2018.01.020

  • 3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat) Reviewed

    K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, Shinichi Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

    12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017   2017-October   1137 - 1140   2018.1

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    DOI： 10.1109/ASICON.2017.8252681

  • An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter Reviewed International journal

    Kazunori Hasegawa, Ichiro Omura, Shinichi Nishizawa

    2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management   2017.1

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    DOI： 10.1109/SBMicro.2017.7990846

  • 三次元スケーリングによるIGBTのVCEsat低減の実験的検証 Reviewed International journal

    筒井一生, 角嶋邦之, 星井拓也, 中島昭, 西澤伸一, 若林整, 宗田伊理也, 佐藤克己, 末代知子, 齋藤渉, 更屋拓哉, 伊藤一夫, 福井宗利, 鈴木慎一, 小林正治, 高倉俊彦, 平本俊郎, 小椋厚志, 沼沢陽一郎, 大村一郎, 大橋弘通, 岩井洋

    電気学会電子デバイス研究会資料   EDD-17 ( 74-86 )   10.6.1 - 10.6.4   2017.1

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    DOI： 10.1109/IEDM.2016.7838390

  • Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections Reviewed

    K. Hasegawa, K. Kozuma, K. Tsuzaki, I. Omura, Shinichi Nishizawa

    Microelectronics and Reliability   64   98 - 100   2016.9

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    DOI： 10.1016/j.microrel.2016.07.049

  • A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter Reviewed International journal

    Kazunori Hasegawa, Ichiro Omura, Shinichi Nishizawa

    31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016   2016-May   3032 - 3037   2016.5

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    DOI： 10.1109/APEC.2016.7468295

  • Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory Reviewed

    S. Araki, B. Gao, Shinichi Nishizawa, S. Nakano, Koichi Kakimoto

    Crystal Research and Technology   51 ( 5 )   344 - 348   2016.5

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    DOI： 10.1002/crat.201500344

  • Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter Reviewed

    Hasegawa Kazunori, Omura Ichiro, Nishizawa Shin-ichi

    IEEE Transactions on Industrial Electronics   63 ( 5 )   2679 - 2687   2016.5

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    Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter
    DC-link capacitors in power electronic converters are a major constraint on improvement of power density as well as reliability. Evaluation of the dc-link capacitors in terms of power loss, ageing, and failure rate will play an important role in design stages of the next-generation power converters. This paper proposes a new evaluation circuit for dc-link capacitors used in a high-power three-phase inverter, which is intended for testing power loss, failure rate, ageing, and so on. The evaluation circuit produces a practical ripple current waveform and a dc bias voltage into a capacitor under test, in which the ripple current is equivalent to that generated by the three-phase inverter on the dc link. The evaluation circuit employs a full-scale current-rating and downscaled voltage-rating inverter for producing the ripple current, so that the power rating of the evaluation circuit is much smaller than that of a full-scale current-rating and full-scale voltage-rating inverter. Theoretical analysis and simulated results verify the effectiveness of new evaluation circuit.

    DOI： 10.1109/TIE.2015.2511097

  • 三相インバータ用直流リンクコンデンサに適した評価回路の実験検証 (電力技術 電力系統技術 半導体電力変換合同研究会 電力技術一般ならびに半導体電力変換一般)

    長谷川 一徳, 大村 一郎, 西澤 伸一

    電気学会研究会資料. PSE = The papers of Technical Meeting on "Power Systems Engineering", IEE Japan   2016 ( 21 )   43 - 48   2016.3

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  • An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform Reviewed

    Akira Nakajima, Shinichi Nishizawa, Shunsuke Kubota, Rei Kayanuma, Kazuo Tsutsui, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

    37th IEEE International Symposium on Workload Characterization, IISWC 2015 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015   2015.10

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    DOI： 10.1109/CSICS.2015.7314489

  • The silicon on diamond structure by low-temperature bonding technique Reviewed

    Sethavut Duangchan, Yusuke Uchikawa, Yusuke Koishikawa, Baba Akiyoshi, Kentaro Nakagawa, Satoshi Matsumoto, Masataka Hasegawa, Shinichi Nishizawa

    2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015   2015-July   187 - 192   2015.7

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    DOI： 10.1109/ECTC.2015.7159590

  • GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform Reviewed

    Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

    27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015   2015-June   357 - 360   2015.6

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    DOI： 10.1109/ISPSD.2015.7123463

  • Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET Reviewed

    Nakajima, Akira, Nishizawa, Shin-Ichi, Ohashi, Hiromichi, Saito, Wataru

    PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of   2015.5

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    Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET
    Power converter efficiencies of 1200-V class Si-IGBT/SiC-SBD hybrid pairs and a SiCMOSFET/ SiC-SBD pair were theoretically compared at a switching frequency above the limit of human hearing (20 kHz). Si-IGBT losses were simulated by TCAD. SiC device losses were calculated by analytical minimum loss models. Calculated efficiencies of the full-SiC pair were slightly higher than that of the hybrid pairs at conventional current densities less than 200 A/cm2. At a higher current density of 400 A/cm2, the hybrid pairs have a potential of high performance which is comparable with the full-SiC efficiency.

  • High-speed dicing of SiC wafers by femtosecond pulsed laser Reviewed

    Nakajima, Akira, Murakami, Hiroshi, Nishizawa, Shin-Ichi, Ohashi, Hiromichi, Kosugi, Ryoji, Mitani, Takeshi, Tateishi, Yosuke, Takahashi, Hidetomo, Ota, Michiharu

    Materials Science Forum   821-823   524 - 527   2015.1

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    High-speed dicing of SiC wafers by femtosecond pulsed laser
    A novel dicing technology that utilizes femtosecond pulsed lasers (FSPLs) is demonstrated as a high-speed and cost-effective dicing process for SiC wafers. The developed dicing process consists of cleavage groove formation on a SiC wafer surface by the FSPL, followed by chip separation by pressing a cleavage blade. The effective FSPL scan speed on the SiC surfaces was 33 mm/s. Kerf loss is negligible in the developed FSPL dicing process. In addition, the residual lattice strain in the FSPL-diced SiC chips was comparably small to that of the conventional mechanical process using diamond saws, due to the absence of the lattice heating effect in femtosecond-laser processes.

    DOI： 10.4028/www.scientific.net/MSF.821-823.524

  • Erratum: “Impact of semiconductor on diamond structure for power supply on chip applications” Reviewed

    53 ( 6 )   69202 - 69202   2014.6

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    DOI： 10.7567/JJAP.53.069202

  • Experimental Investigation of Normally-On Type Bidirectional Switch for Indirect Matrix Converters Reviewed

    Kyungmin Sung, Ryuji Iijima, Shinichi Nishizawa, Isami Norigoe, Hiromichi Ohashi

    2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA)   117 - 122   2014.5

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    DOI： 10.1109/IPEC.2014.6869568

  • Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures Reviewed

    Akira Nakajima, Pucheng Liu, Masahiko Ogura, Toshiharu Makino, Kuniyuki Kakushima, Shinichi Nishizawa, Hiromichi Ohashi, Satoshi Yamasaki, Hiroshi Iwai

    Journal of Applied Physics   115 ( 15 )   2014.4

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    DOI： 10.1063/1.4872242

  • 2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications Reviewed

    Yuji Matsuoka, Keiji Wada, Mizuki Nakahara, Kazuto Takao, Kyungmin Sung, Hiromichi Ohashi, Shinichi Nishizawa

    7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014   744 - 749   2014.1

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    DOI： 10.1109/IPEC.2014.6869671

  • Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory Reviewed

    T. Shiramomo, B. Gao, F. Mercier, Shinichi Nishizawa, S. Nakano, Koichi Kakimoto

    Journal of Crystal Growth   385   95 - 99   2014.1

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    DOI： 10.1016/j.jcrysgro.2013.03.036

  • Impact of semiconductor on diamond structure for power supply on chip applications Reviewed

    Nakagawa Kentaro, Kodama Takuya, Matsumoto Satoshi, Yamada Takatoshi, Hasegawa Masataka, Nishizawa Shinichi

    Jpn. J. Appl. Phys.   53 ( 4 SPEC. ISSUE )   04EP16   2014.1

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    Impact of semiconductor on diamond structure for power supply on chip applications
    In this study, we assessed a semiconductor (silicon or GaN)-on-diamond (SeOD) structure and compared it with a conventional silicon on insulator (SOI) structure, i.e., diamond, for power-supply-on-chip (power-SoC) applications by numerical simulations. The SeOD structure has thermal advantages over the conventional SOI structure without degrading electrical characteristics even using a thin diamond film (0.3 μm).

    DOI： 10.7567/JJAP.53.04EP16

  • Raman intensity profiles of zone-folded modes in SiC Identification of stacking sequence of 10H-SiC Reviewed

    S. Nakashima, T. Tomita, N. Kuwahara, T. Mitani, M. Tomobe, Shinichi Nishizawa, H. Okumura

    Journal of Applied Physics   114 ( 19 )   2013.11

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    DOI： 10.1063/1.4828996

  • Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module Reviewed

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013   1577 - 1583   2013.10

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    DOI： 10.1109/ECCE.2013.6646893

  • Maximum Switching Frequency Characterization of 4.5kV-400A SiC-PiN diode and Si-IEGT Hybrid Pair Power Module Reviewed

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)   1570 - 1576   2013.10

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  • Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface Reviewed

    Akira Nakajima, Pucheng Liu, Masahiko Ogura, Toshiharu Makino, Shinichi Nishizawa, Satoshi Yamasaki, Hiromichi Ohashi, Kuniyuki Kakushima, Hiroshi Iwai

    Applied Physics Express   6 ( 9 )   2013.9

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    DOI： 10.7567/APEX.6.091002

  • Characterization of Two-Dimensional Hole Gas at GaN/AlGaN Heterointerface

    Pucheng Liu, Kuniyuki Kakushima, Hiroshi Iwai, Akira Nakajima, Toshiharu Makino, Masahiro Ogura, Shinichi Nishizawa, Hiromichi Ohashi

    2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)   155 - 158   2013.8

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  • Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals Reviewed

    Journal of Crystal Growth   362 ( 1 )   99 - 102   2013.1

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    DOI： 10.1016/j.jcrysgro.2011.11.019

  • Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates Reviewed

    Journal of Crystal Growth   362 ( 1 )   170 - 173   2013.1

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    DOI： 10.1016/j.jcrysgro.2011.09.061

  • Role of surface effects on silicon carbide polytype stability Reviewed

    Journal of Crystal Growth   360 ( 1 )   189 - 192   2012.12

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    DOI： 10.1016/j.jcrysgro.2011.11.052

  • 4.5kV-400A Si-IEGT+SiC-PiN ダイオードハイブリッドペアモジュールによる高電圧大電力変換器の4kHzスイッチング動作の実証

    高尾 和人, 大田 千春, 四戸 孝, 和田 圭二, 成 慶〓, 松岡 祐司, 金井 丈雄, 田中 保宣, 西澤 伸一, 大橋 弘通

    電気学会研究会資料. SPC, 半導体電力変換研究会   2012 ( 115 )   13 - 17   2012.10

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  • 4.5kV-400A Modules using SiC-PiN diodes and Si-IEGTs Hybrid Pair for High Power Medium-Voltage Power Converters Reviewed

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)   1509 - 1514   2012.10

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  • ダイヤモンド薄膜を絶縁膜として用いたパワーSoC用SOI基板のシミュレーションによる検討

    児玉 拓也, 松本 聡, 西澤 伸一

    電気学会研究会資料. EDD, 電子デバイス研究会   2012 ( 59 )   13 - 17   2012.10

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  • Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory Reviewed

    T. Shiramomo, B. Gao, F. Mercier, Shinichi Nishizawa, S. Nakano, Yoshihiro Kangawa, Koichi Kakimoto

    Journal of Crystal Growth   352 ( 1 )   177 - 180   2012.8

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    DOI： 10.1016/j.jcrysgro.2012.01.023

  • Chloride-based CVD growth of silicon carbide for electronic applications Reviewed

    Chemical Reviews   112 ( 4 )   2434 - 2453   2012.4

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    DOI： 10.1021/cr200257z

  • Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide Reviewed

    Crystal Growth and Design   12 ( 4 )   1977 - 1984   2012.4

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    DOI： 10.1021/cg201684e

  • パワーMOSFETの信頼性評価を目的とした非破壊試験回路の検討

    中川 徹也, 和田 圭二, 西澤 伸一, 大橋 弘通

    電気学会研究会資料. SPC, 半導体電力変換研究会   2012 ( 1 )   115 - 120   2012.1

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  • Thermodynamic analysis of SiC polytype growth by physical vapor transport method Reviewed

    Koichi Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Shinichi Nishizawa

    Journal of Crystal Growth   324 ( 1 )   78 - 81   2011.6

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    DOI： 10.1016/j.jcrysgro.2011.03.059

  • Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts Reviewed

    Mercier Frederic, Nishizawa Shin-ichi

    Jpn J Appl Phys   50 ( 3 )   35603 - 035603-5   2011.3

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    Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts
    Numerical study has been applied to analyze the high temperature solution growth process for bulk silicon carbide (SiC) crystal growth. A twodimensional axisymmetric model for 2-in. SiC crystal growth was used for this study. The purpose of this paper is to investigate the possible approaches to enhance the growth rate in this process. In particular, we studied the effect of an AC magnetic field on the carbon transport to the crystal growth interface. The results revealed that the carbon flux to the growing crystal is strongly affected by the coil position and the applied frequency. If these two process parameters are properly chosen, we show that the carbon flux at the growing front, and thus the growth rate of SiC, can be enhanced.

    DOI： 10.1143/JJAP.50.035603

  • Solution growth of SiC from silicon melts Influence of the alternative magnetic field on fluid dynamics Reviewed

    Journal of Crystal Growth   318 ( 1 )   385 - 388   2011.3

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    DOI： 10.1016/j.jcrysgro.2010.10.022

  • Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation Reviewed

    B. Gao, X. J. Chen, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   312 ( 22 )   3349 - 3355   2010.11

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    DOI： 10.1016/j.jcrysgro.2010.08.032

  • Numerical simulation of a new SiC growth system by the dual-directional sublimation method Reviewed

    Xuejiang Chen, Shinichi Nishizawa, Koichi Kakimoto

    Journal of Crystal Growth   312 ( 10 )   1697 - 1702   2010.5

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    DOI： 10.1016/j.jcrysgro.2010.02.027

  • Doping Concentration Optimization for Ultra-low-loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD) Reviewed

    C. Ota, J. Nishio, K. Takao, T. Hatakeyama, T. Shinohe, K. Kojima, S. Nishizawa, H. Ohashi

    SILICON CARBIDE AND RELATED MATERIALS 2008   615-617   655 - 658   2009.11

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    DOI： 10.4028/www.scientific.net/MSF.615-617.655

  • パワーエレクトロニクス用基板の開発動向と加工技術課題 (特集 グリーンエネルギー時代を支える先進加工技術とその課題)

    西澤 伸一, 大橋 弘通

    機械と工具   53 ( 8 )   15 - 19   2009.8

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  • Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy Reviewed

    Shinichi Nishizawa

    Journal of Crystal Growth   311 ( 3 )   871 - 874   2009.1

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    DOI： 10.1016/j.jcrysgro.2008.09.105

  • Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance Reviewed

    K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, Shinichi Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai

    Materials Science Forum   600-603   907 - 912   2008.9

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    DOI： 10.4028/3-908453-11-9.907

  • Silicon carbide growth C/Si ratio evaluation and modeling Reviewed

    Michel Pons, Shinichi Nishizawa, Peter Wellmann, E. Blanquet, D. Chaussende, J. M. Dedulle, R. Madar

    Materials Science Forum   600-603   83 - 88   2008.9

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    DOI： 10.4028/3-908453-11-9

  • Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs) Reviewed

    Johji Nishio, Chiharu Ota, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shinichi Nishizawa, Hiromichi Ohashi

    IEEE Transactions on Electron Devices   55 ( 8 )   1954 - 1960   2008.8

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    DOI： 10.1109/TED.2008.926666

  • High throughput SiC wafer polishing with good surface morphology Reviewed

    Tomohisa Kato, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Tomonori Miura, Shinichi Nishizawa, Kazuo Arai

    Materials Science Forum   556-557   753 - 756   2007.9

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  • Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs) Reviewed

    C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

    Materials Science Forum   556-557   881 - 884   2007.9

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  • Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment Reviewed

    Akimasa Kinoshita, Kenji Suzuki, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shinichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes   46 ( 8 A )   5342 - 5344   2007.8

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    DOI： 10.1143/JJAP.46.5342

  • Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth Reviewed

    Shinichi Nishizawa, Tomohisa Kato, Kazuo Arai

    Journal of Crystal Growth   303 ( 1 SPEC. ISS. )   342 - 344   2007.5

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    DOI： 10.1016/j.jcrysgro.2006.12.022

  • Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor Reviewed

    Shinichi Nishizawa, Michel Pons

    Journal of Crystal Growth   303 ( 1 SPEC. ISS. )   334 - 336   2007.5

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    DOI： 10.1016/j.jcrysgro.2006.12.018

  • Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy Reviewed

    S. Nakashima, T. Mitani, T. Tomita, T. Kato, Shinichi Nishizawa, H. Okumura, H. Harima

    Physical Review B - Condensed Matter and Materials Physics   75 ( 11 )   2007.3

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    DOI： 10.1103/PhysRevB.75.115321

  • Defect and growth analysis of SiC bulk single crystals with high nitrogen doping Reviewed

    Tomohisa Kato, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shinichi Nishizawa, Kazuo Arai

    Materials Science Forum   556-557   239 - 242   2007.1

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  • Activation treatment of ion implanted dopants using hybrid super RTA equipment

    Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin-ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

    Silicon Carbide and Related Materials 2005, Pts 1 and 2   527-529   803 - 806   2006.10

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    DOI： 10.4028/www.scientific.net/MSF.527-529.803

  • Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties Reviewed

    C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S. Nishizawa, H. Ohashi

    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2   527-529 ( PART 2 )   1175 - 1178   2006.10

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  • Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor Reviewed

    Shinichi Nishizawa, Michel Pons

    Chemical Vapor Deposition   12 ( 8-9 )   516 - 522   2006.8

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    DOI： 10.1002/cvde.200606469

  • X線可視化・シミュレーションによる単結晶育成過程の追跡

    加藤 智久, 山口 博隆, 西澤 伸一, 荒井 和雄

    應用物理   75 ( 5 )   584 - 585   2006.5

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  • IWMCG-5 (5^<th> International Workshop on Modeling in Crystal Growth)に参加して(閑話休題)

    西澤 伸一

    日本結晶成長学会誌   33 ( 5 )   403 - 404   2006.5

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    DOI： 10.19009/jjacg.33.5_403

  • Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals Reviewed

    S. Nakashima, T. Kato, Shinichi Nishizawa, T. Mitani, H. Okumura, T. Yamamoto

    Journal of the Electrochemical Society   153 ( 4 )   2006.4

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    DOI： 10.1149/1.2170546

  • Numerical modeling of SiC-CVD in a horizontal hot-wall reactor Reviewed

    Shinichi Nishizawa, Michel Pons

    Microelectronic Engineering   83 ( 1 SPEC. ISS. )   100 - 103   2006.1

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    DOI： 10.1016/j.mee.2005.10.033

  • In-situ observation of SiC bulk single crystal growth by XRD system Reviewed

    Tomohisa Kato, Shinichi Nishizawa, Hirotaka Yamaguchi, Kazuo Arai

    Journal of Rare Earths   24 ( SUPPL. )   49 - 53   2006

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  • Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor Reviewed

    Shinichi Nishizawa, Kazutoshi Kojima, Satoshi Kuroda, Kazuo Arai, Michel Pons

    Journal of Crystal Growth   275 ( 1-2 )   2005.2

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    DOI： 10.1016/j.jcrysgro.2004.11.072

  • Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer Reviewed

    K. Kojima, Shinichi Nishizawa, S. Kuroda, H. Okumura, K. Arai

    Journal of Crystal Growth   275 ( 1-2 )   2005.2

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    DOI： 10.1016/j.jcrysgro.2004.11.071

  • 改良レーリー法によるSiC単結晶成長

    西澤 伸一

    セラミックス   40 ( 1 )   11 - 13   2005.1

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  • Continuous growth of SiC single crystal by the spray dried powder made of ultra-fine particle precursors Reviewed

    Y. Yamada, Shinichi Nishizawa, S. Nakashima, K. Arai

    Materials Science Forum   457-460 ( I )   131 - 134   2004.6

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  • Large diameter and long length growth of SiC single crystal Reviewed

    T. Kato, T. Ohno, F. Hirose, N. Oyanagi, Shinichi Nishizawa, K. Arai

    Materials Science Forum   457-460 ( I )   99 - 102   2004.6

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  • High-quality SiC bulk single crystal growth based on simulation and experiment Reviewed

    Shinichi Nishizawa, T. Kato, Y. Kitou, N. Oyanagi, F. Hirose, H. Yamaguchi, W. Bahng, K. Arai

    Materials Science Forum   457-460 ( I )   29 - 34   2004.6

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  • Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate Reviewed

    Y. Tanaka, T. Ohno, N. Oyanagi, Shinichi Nishizawa, T. Suzuki, K. Fukuda, T. Yatsuo, K. Arai

    Materials Science Forum   457-460 ( II )   1009 - 1012   2004.6

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  • Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets Reviewed

    Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shinichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

    Materials Science Forum   433-436   669 - 672   2003.9

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  • Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method Reviewed

    Shinichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai

    Materials Science Forum   433-436   13 - 16   2003.9

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  • Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate Reviewed

    Yasunori Tanaka, Shinichi Nishizawa, Kenji Fukuda, Kazuo Arai, Toshiyuki Ohno, Naoki Oyanagi, Takaya Suzuki, Tsutomu Yatsuo

    Applied Physics Letters   83 ( 2 )   377 - 379   2003.7

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    DOI： 10.1063/1.1591062

  • Healing defects in SiC wafers by liquid-phase epitaxy in Si melts Reviewed

    M. Nasir Khan, Shinichi Nishizawa, Kazuo Arai

    Journal of Crystal Growth   254 ( 1-2 )   137 - 143   2003.6

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    DOI： 10.1016/S0022-0248(03)01177-1

  • 昇華法によるSiCバルク単結晶成長 : 数値解析の活用

    西澤 伸一, 加藤 智久, 木藤 泰男, 廣瀬 富佐男, 小柳 直樹, 山口 博隆, 荒井 和雄

    電子情報通信学会論文誌. C, エレクトロニクス = The transactions of the Institute of Electronics, Information and Communication Engineers. C   86 ( 4 )   334 - 341   2003.4

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    昇華法によるSiC単結晶成長は,2000℃を超える黒鉛るつぼで閉じられた閉鎖空間でのブラックボックスプロセスであり,これまで経験則に基づく技術開発が行われてきた.そのため,大口径化・高品質化に対して解決すべき技術課題が多数残されている.今回,数値解析を結晶成長炉内の可視化技術として適用し,実際の昇華法による結晶成長時の温度・昇華ガス濃度・応力分布の解析を行い,SiC単結晶品質の向上に資してきたので,その結果を報告する.

  • Initial stage of GaN nucleation on √3 × √3 R 30°-Ga reconstructed 4H-SiC(0 0 0 1)Si by molecular-beam epitaxy Reviewed

    527 ( 1-3 )   2003.3

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    Gallium nitride (GaN) initial nucleation kinetics by the influence of SiC(0 0 0 1)Si surface structure has been investigated. The Ga induced √3×√3R30° and 3×3 surface reconstructions are found to be more efficacious for GaN growth. During the initial stage of GaN/4H-SiC(0 0 0 1)Si growth by molecular-beam epitaxy, coherent polygon islands grow wide (∼40 nm) along the lateral directions. These coherent islands develop 2D growth through early coalescence as evidenced by the in situ reflection high-energy electron diffraction observation. The control of Ga-adatom migration and the adsorption of 1/3 and 1 monolayer (ML) of Ga-adatom govern the surface morphology of the GaN layers. The bulk surfaces of (1 × 1) and (2 × 1) introduces incoherent nuclei, resulting in a delay of GaN coalescence, exhibits rough growth front and poor surface morphology.

    DOI： 10.1016/S0039-6028(03)00016-5

  • Numerical simulation of thermal transpiration of capacitance diaphragm gauge 隔膜真空計における熱遷移現象の数値解析 Reviewed

    45 ( 3 )   119 - 122   2003.3

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    The Capacitance diaphragm gauge (CDG) is one of the most important vacuum gauges in low and middle vacuum ranges. The difference of temperature between the sensor head and the vacuum chamber gives a non-linear sensitivity of the gauge depending on the pressure due to thermal transpiration effect. Change in the sensitivity of about 4% between molecular flow regime and viscous flow regime is significant for metrological use of the gauge. In this study, by using a DSMC method, pressure distribution in the connecting tube of the gauge was obtained under the pressure range from molecular flow regime to viscous flow regime with taking account of temperature distribution along the connecting tube. It was in good agreement with the pressure dependence of sensitivity obtained by static expansion system experimentally. Furthermore, influence of gas-surface interaction on the thermal transpiration was also discussed.

  • Numerical simulation of thermal transpiration in Capacitance diaphragm gauge 隔膜真空計における熱遷移効果の数値解析 Reviewed

    46 ( 3 )   197 - 199   2003.3

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    The Capacitance diaphragm gauge is one of the most important vacuum gauges in low and middle vacuum ranges. The difference of temperature between the sensor head and the vacuum chamber gives a non-linear sensitivity of the gauge due to thermal transpiration effect. This sensitivity depends not only on pressure but also gas species. It is supposed that under the same condition of gas-surface interaction, the sensitivity should be normalized by mean free path independently of gas species. However, the sensitivity normalized by mean free path also depends on gas species. In this study, by using DSMC method, the influence of gas-surface interaction on thermal transpiration was analyzed. In case of random reflection model, the sensitivity has non-linearity and depends on mean free path. On the other hand, in case of a perfectly elastic reflection model, the sensitivity is constant regardless mean free path. In case of complex reflection that is composed of random and elastic reflections, as increasing the elastic reflection component, the sensitivity decreases from that of random reflection to elastic reflection.

  • Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt Reviewed

    M. Nasir Khan, Shinichi Nishizawa, Tomohisa Kato, Ryoji Kosugi, Kazuo Arai

    Materials Letters   57 ( 2 )   307 - 314   2002.12

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    DOI： 10.1016/S0167-577X(02)00783-8

  • DSMC analysis of thermal transpiration of capacitance diaphragm gauge Reviewed

    Shinichi Nishizawa, Masahiro Hirata

    Vacuum   67 ( 3-4 )   301 - 306   2002.9

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    DOI： 10.1016/S0042-207X(02)00212-9

  • 昇華法によるSiC単結晶成長とその場観察(<小特集>バルク成長分科会特集 : 結晶成長の科学と技術)

    西澤 伸一, 山口 博隆, 加藤 智久, 小柳 直樹, 木藤 泰男, 荒井 和雄

    日本結晶成長学会誌   29 ( 5 )   431 - 438   2002.5

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    Silicon carbide (SiC) is the most promising material for high power, high frequency and low loss device applications. In order to realize SiC devices, it is necessary to improve the grown crystal quality. SiC bulk single crystal is grown by sublimation method, inside a closed carbon crucible. Because of the black box process, the optimization of sublimation process is difficult. From this point view the in situ X ray topography system was developed to observe the phenomena inside a crucible during the growth. The numerical simulation was also applied. From these observations, the heat and mass transfer in a crucible was discussed involving in the macroscopic crystal quality, such as crystal diameter, growing surface shape, and also in the microscopic crystal quality such as defect generations.

    DOI： 10.19009/jjacg.29.5_431

  • A method of reducing micropipes in thin films by using sublimation growth Reviewed

    Naoki Oyanagi, Shinichi Nishizawa, Kazuo Arai

    Materials Science Forum   389-393 ( 1 )   107 - 110   2002.4

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  • Numerical simulation of heat and mass transfer in SiC sublimation growth Reviewed

    Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai

    Materials Science Forum   389-393 ( 1 )   43 - 46   2002.4

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  • Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition Reviewed

    389-393 ( 1 )   299 - 302   2002.4

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    Microwave plasma chemical vapor deposition was performed aiming at low temperature homoepitaxial growth of 4H-SiC thin films. The growth rate of the deposited film depended strongly on the SiH4 flow rate, and a smooth surface could not obtained at high SiH4 flow rate. The surface morphology was also affected by the C/Si ratio. A high C/Si ratio was required to obtain smooth SiC films. Single crystalline 4H-SiC film growth has been achieved at a temperature as low as 970°C by growing under very high C/Si ratio (C/Si = 175) with a very low SiH4 flow rate (0.004sccm).

  • Growth and evaluation of high quality SiC crystal by sublimation method Reviewed

    Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai

    Materials Science Forum   389-393 ( 1 )   87 - 90   2002.4

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  • Flux-controlled sublimation growth by an inner guide-tube Reviewed

    Yasuo Kitou, Wook Bahng, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai

    Materials Science Forum   389-393 ( 1 )   83 - 86   2002.4

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  • Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth Reviewed

    Tomohisa Kato, Naoki Oyanagi, Yasuo Kitou, Shin-ichi Nishizawa, Kazuo Arai

    Materials Science Forum   389-393 ( 1 )   111 - 114   2002.4

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  • Characterization of inclusions in SiC bulk crystals grown by modified lely method Reviewed

    Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai

    Materials Science Forum   389-393 ( 1 )   75 - 78   2002.1

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    DOI： 10.4028/www.scientific.net/msf.389-393.75

  • Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth Reviewed

    Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai

    Journal of Crystal Growth   233 ( 1-2 )   219 - 225   2001.11

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    DOI： 10.1016/S0022-0248(01)01578-0

  • In-situ X-ray topography on crystal growth of silicon carbide Reviewed

    Hirotaka Yamaguchi, Shinichi Nishizawa, Tomohisa Kato, Naoki Oyanagi, Sadafumi Yoshida, Kazuo Arai

    Yosetsu Gakkai Shi/Journal of the Japan Welding Society   70 ( 6 )   23 - 27   2001.9

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  • 隔膜真空計における熱遷移現象の数値解析

    西澤 伸一, 平田 正紘

    真空   44 ( 3 )   328 - 328   2001.3

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  • New crucible design for SiC single crystal growth by sublimation Reviewed

    NISHIZAWA S.

    Mat. Res. Soc. Symp.   640   H151 - 156   2001.1

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    New crucible design for SiC single crystal growth by sublimation
    SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

  • In-situ observation of silicon carbide sublimation growth by X-ray topography Reviewed International journal

    Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Shinichi Nishizawa, M. Nasir Khan, Yasuo Kitou, Kazuo Arai

    Journal of Crystal Growth   222 ( 3 )   579 - 585   2001.1

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    DOI： 10.1016/S0022-0248(00)00958-1

  • Defect analysis of SiC sublimation growth by the in-situ X-ray topography Reviewed

    T. Kato, N. Oyanagi, H. Yamaguchi, Shinichi Nishizawa, K. Arai

    Materials Science Forum   353-356   295 - 298   2001.1

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  • Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel Reviewed

    M. Nasir Khan, Shinichi Nishizawa, Wook Bahng, Kazuo Arai

    Journal of Crystal Growth   220 ( 1-2 )   75 - 81   2000.11

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    DOI： 10.1016/S0022-0248(00)00733-8

  • Beryllium implantation doping of silicon carbide Reviewed

    T. Henkel, Y. Tanaka, N. Kobayashi, Shinichi Nishizawa, S. Hishita

    Materials Science Forum   338   2000.5

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  • Temperature gradient effect on SiC epitaxy in liquid phase Reviewed

    Muhammad Nasir Khan, Shinichi Nishizawa, Wook Bahng, Kazuo Arai

    Materials Science Forum   338   2000.5

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  • Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching Reviewed

    T. Henkel, G. Ferro, Shinichi Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, N. Kobayashi

    Materials Science Forum   338   2000.5

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  • SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique Reviewed

    Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai

    Materials Science Forum   338   2000.5

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  • Shape of SiC bulk single crystal grown by sublimation Reviewed

    Shinichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai

    Materials Science Forum   338   2000.5

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  • Pressure effect in sublimation growth of bulk SiC Reviewed

    Yasuo Kitou, Wook Bahng, Shinichi Nishizawa, Shigehiro Nishino, Kazuo Arai

    Materials Science Forum   338   2000.5

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  • Enlargement of SiC single crystal Enhancement of lateral growth using tapered graphite lid Reviewed

    Wook Bahng, Yasuo Kitou, Shinichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino

    Materials Science Forum   338   2000.5

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  • 薄膜基板温度観察装置の試作

    村上 寛, 西沢 伸一, 町田 和雄

    真空   43 ( 3 )   430 - 430   2000.3

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  • Rapid enlargement of SiC single crystal using a cone-shaped platform Reviewed

    BAHNG W.

    J. Crystal Growth   209 ( 4 )   767 - 772   2000.2

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    Rapid enlargement of SiC single crystal using a cone-shaped platform
    We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crystals grown on the cone-shaped platform were larger in diameter than those grown on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a platform for single crystal and (ii) an obstacle to the lateral growth of ingot. The dependence of the broadening angle (β) of single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found.

    DOI： 10.1016/S0022-0248(99)00754-X

  • In situ x-ray topography of silicon carbide during crystal growth by sublimation method Reviewed

    H. Yamaguchi, Shinichi Nishizawa, T. Kato, N. Oyanagi, W. Bahng, S. Yoshida, K. Arai, Y. Machitani, T. Kikuchi

    Review of Scientific Instruments   71 ( 7 )   2829 - 2832   2000.1

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    DOI： 10.1063/1.1150698

  • X-ray topographic study of SiC crystal at high temperature Reviewed

    H. Yamaguchi, N. Oyanagi, T. Kato, Y. Takano, Shinichi Nishizawa, W. Bahng, S. Yoshida, K. Arai

    Materials Science Forum   338   2000.1

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  • In-situ observation of SiC bulk single crystal growth by X-ray topography Reviewed

    Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shinichi Nishizawa, Kazuo Arai

    Materials Science Forum   338   2000.1

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  • X線トポグラフィーによるSiC単結晶成長その場観察装置の開発

    西澤 伸一, 山口 博隆, 加藤 智久

    電子技術総合研究所彙報   63 ( 8 )   305 - 310   1999.9

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  • SiC単結晶成長のX線トポグラフィーその場観察装置の開発

    山口 博隆, 西澤 伸一, 荒井 和雄

    電総研ニュース   ( 595 )   2 - 5   1999.8

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  • 11.4宇宙実験(11.宇宙工学)

    西澤 伸一

    日本機械学会誌   102 ( 969 )   492 - 492   1999.8

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    DOI： 10.1299/jsmemag.102.969_492_2

  • Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer Reviewed

    H. Yamaguchi, Shinichi Nishizawa, W. Bahng, K. Fukuda, S. Yoshida, K. Arai, Y. Takano

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology   61-62   221 - 224   1999.7

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  • Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth Reviewed

    Shinichi Nishizawa, H. Yamaguchi, T. Kato, N. Oyanagi, S. Yoshida, K. Arai

    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory   63 ( 8-9 )   37 - 42   1999.6

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  • 11.4宇宙実験(11.宇宙工学)

    西澤 伸一

    日本機械学会誌   101 ( 957 )   595 - 595   1998.8

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    Language：Japanese  

    DOI： 10.1299/jsmemag.101.957_595_2

  • Interfacial phenomena of molten silicon Marangoni flow and surface tension Reviewed

    Taketoshi Hibiya, Shin Nakamura, Kusuhiro Mukai, Zheng Gang Niu, Nobuyuki Imaishi, Shinichi Nishizawa, Shin Ichi Yoda, Masato Koyama

    Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences   356 ( 1739 )   899 - 909   1998.4

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    Language：English  

    DOI： 10.1098/rsta.1998.0195

  • Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket Reviewed

    Shin Nakamura, Taketoshi Hibiya, Koichi Kakimoto, Nobuyuki Imaishi, Shinichi Nishizawa, Akira Hirata, Kusuhiro Mukai, Shin Ichi Yoda, Tomoji S. Morita

    Journal of Crystal Growth   186 ( 1-2 )   85 - 94   1998.3

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    Language：English  

    DOI： 10.1016/S0022-0248(97)00440-5

  • 11.4 宇宙実験(11.宇宙工学)

    西澤 伸一

    日本機械学会誌   100 ( 945 )   868 - 868   1997.8

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    Language：Japanese  

    DOI： 10.1299/jsmemag.100.945_868_2

  • 宇宙空間での材料作製のためのシミュレーション

    西澤 伸一

    シミュレーション   16 ( 2 )   118 - 121   1997.6

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    Language：Japanese  

    In space, it could be possible to make high quality, large and new functional materials. For the material processing such as melt growth of materilas for electrical devices and oxides, it is very important to understand and control the convective phenomena in melt. In this point of view, Marangoni convection in a liquid bridge which simulates the half floating zone was observed under microgravity conditions during parabolic filght. The experimental resutls was compared with that of numerical simulations. The developing processes of flow filed and temperature field were made clear. Furthermore, it coud be possible to estimate the pehnomena which might be happened as long time passed by numerical simulations. It means that numerical simulation is very usufel for developing the materila processing in space.

  • 3rd China-Japan Workshop on Microgravity Science

    JASMA : Journal of the Japan Society of Microgravity Application   14 ( 1 )   95 - 96   1997.2

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    Language：Japanese  

    3rd China-Japan Workshop on Microgravity Science

  • Transition of oscillatory floating half zone convection from Earth's gravity to microgravity Reviewed

    Y. L. Yao, J. Z. Shu, J. C. Xie, F. Liu, W. R. Hu, A. Hirata, Shinichi Nishizawa, M. Sakurai

    International Journal of Heat and Mass Transfer   40 ( 11 )   2517 - 2524   1997.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/S0017-9310(96)00309-2

  • Diffusion dominated process for the crystal growth of a binary alloy Reviewed

    Wen Rui Hu, Akira Hirata, Shinichi Nishizawa

    Journal of Crystal Growth   169 ( 2 )   380 - 392   1996.11

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    Language：English  

    DOI： 10.1016/S0022-0248(96)00386-7

  • 2次元矩形容器内の温度差・濃度差マランゴニ対流現象

    西澤 伸一, 石山 修, 澤岡 昭

    13 ( 4 )   304 - 304   1996.10

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    Language：English  

  • Marangoni convection in a liquid bridge under microgravity conditions during parabolic flight Reviewed

    Akira Hirata, Shinichi Nishizawa, Motoharu Noguchi, Masato Sakurai, Shouichi Yasuhiro, Nobuyuki Imaishi

    Journal of Chemical Engineering of Japan   27 ( 1 )   65 - 71   1994.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1252/jcej.27.65

  • Interfacial Contamination Caused by Water on Marangoni Convection in a Silicone Oil Liquid Bridge Reviewed

    Akira Hirata, Shinichi Nishizawa, Masato Sakurai, Nobuyuki Imaishi

    Journal of Chemical Engineering of Japan   26 ( 6 )   754 - 756   1993.12

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1252/jcej.26.754

  • MOMENTUM, WITH HEAT AND MASS TRANSFER THROUGH GAS-LIQUID INTERFACE WITH ACCELERATED INTERFACIAL VELOCITY Reviewed

    NISHIZAWA Shin-ichi, HIRATA Akira

    Journal of chemical engineering of Japan   26 ( 6 )   649 - 655   1993.3

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    Language：English  

    Momentum, with Heat and Mass Transfer Through Gas-Liquid Interface with Accelerated Interfacial Velocity
    Effects of interfacial velocity on interfacial momentum, heat and mass transfer through a gas-liquid interface were quantitatively investigated. The rates of momentum, heat and mass transfer depend not only on the magnitude of the interfacial velocity but also on the change of acceleration in interfacial velocity. In addition, by considering the interfacial tension gradient to be the cause of interfacial acceleration, the effect of the interfacial tension gradient on interfacial velocity, interfacial momentum, heat and mass transfer were also quantitatively investigated. Both the interfacial velocity and the rates of momentum, heat and mass transfer depend not only on the magnitude of the interfacial tension gradient but also on the change of interfacial tension.

    DOI： 10.1252/jcej.26.649

  • Effect of interfacial tension gradient on momentum and mass transfer through a moving interface of single drops Reviewed

    A. Hirata, Shinichi Nishizawa, Y. Okano

    Unknown Host Publication Title   1992.1

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    Language：English  

  • Numerical study of transport phenomena through fluid-liquid interfaces Reviewed

    Akira Hirata, Yasunori Okano, Shinichi Nishizawa

    Bulletin of Centre for Informatics (Waseda University)   8   9 - 22   1988.9

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    Language：English  

▼display all

Books

  • エネルギーの未来 脱・炭素エネルギーに向けて

    馬奈木 俊介, 尾沼 広基, 藤田 敏之, 板岡 健之, 原田 達朗, 岡田 重人, 島谷 幸宏, 村川 友美, 柿本 浩一, 西澤 伸一, 矢部 光保, 村田 純一, 分山 達也（ Role： Joint author）

    中央経済社  2019.3 

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    Language：Japanese   Book type：General book, introductory book for general audience

  • SiC素子の基礎と応用

    西澤 伸一, 加藤智久, 木藤泰男, 小柳直樹, 廣瀬富佐雄, 山口博隆, 大谷昇（ Role： Joint author）

    西澤 伸一、加藤智久、木藤泰男、小柳直樹、廣瀬富佐雄、山口博隆、大谷昇  2003.3 

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    Language：Japanese   Book type：Scholarly book

Presentations

  • Recent Progress of scaled Si-IGBT and related technologies Invited International conference

    Shin-ichi NISHIZAWA

    6th edition of IEEE International Conference on Emerging Electronics  2022.12 

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    Event date： 2022.12 - 2023.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：India  

  • Recent Silicon wafer R&D trend as future PE key technology Invited International conference

    Shin-ichi Nishizawa

    The 2nd International Workshop on New Generation Power Electronics and Systems  2020.1 

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    Event date： 2020.1

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • シリコン結晶成長における温度勾配と成長速度の関係 Invited

    西澤 伸一, 原田 博文, 宮村 佳児

    第48回結晶成長国内会議（JCCG-48）  2019.11 

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    Event date： 2019.10 - 2019.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：大阪   Country：Japan  

  • 結晶成長速度が固液界面形状および結晶内温度分布に及ぼす影響

    西澤 伸一, 原田 博文, 宮村 佳児

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：札幌   Country：Japan  

  • EFFECTS OF GROWTH RATE ON MELT/CRYSTAL INTERFACE SHAPE AND TEMPERATURE DISTRIBUTION IN GROWING CRYSTAL International conference

    Shin-ichi Nishizawa

    ICCGE19  2019.7 

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    Event date： 2019.7 - 2019.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • WBG road map activies in NPERC-J Invited International conference

    Shin-ichi Nishizawa

    WBG Roadmap Workshop  2019.3 

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    Event date： 2019.3

    Language：English   Presentation type：Symposium, workshop panel (public)  

    Country：Guam  

  • Future Power Devices and Semiconductor Wafer Materials International conference

    Shin-ichi Nishizawa

    The Forum on the Science and Technology of Silicon Materials 2018  2018.11 

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    Event date： 2018.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Effect of Nitrogen / Aluminum on Silicon Carbide Poly-type Stability International conference

    Shin-ichi Nishizawa, Frederic Mercier

    International Workshop on Modeling in Crystal Growth9 (IWMCG9)  2018.10 

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    Event date： 2018.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • 三次元スケーリングによるIGBTのVCEsat低減の実験的検証

    筒井一生, 角嶋邦之, 星井拓也, 中島昭, 西澤伸一, 若井整, 宗田伊理也, 佐藤克己, 末代知子, 齋藤渉, 更屋拓哉, 伊藤一夫, 福井宗利, 鈴木慎一, 小林正治, 高倉俊彦, 平本俊郎, 小椋厚志, 沼沢陽一郎, 大村一郎, 大橋弘通, 岩井洋

    電気学会電子デバイス・半導体電力変換合同研究会  2017.11 

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    Event date： 2017.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：鹿児島大学   Country：Japan  

    Three dimensionally scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial
    products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, -- VCEsat reduction from 1.70 to 1.26 V -- was experimentally confirmed for the 3D scaled IGBTs.

  • Silicon Carbide Single Crystal Growth by Sublimation and its Poly-type Control Invited International conference

    Shin-ichi Nishizawa

    The 7th Asian Conference On Crystal Growth and Crystal Technology  2017.10 

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    Event date： 2017.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  • Power Electronics Application of Widebadngap Semiconductor with its superior properties Invited International conference

    Shin-ichi Nishizawa

    German-Japanese Symposium "Regional Innovation and Cluster Collaborations"  2017.9 

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    Event date： 2017.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • WBG Roadmap-Lead Application Invited International conference

    Shin-ichi Nishizawa

    The 5th NPERC-J Workshop "Wide bandgap devices and lead applications"  2017.9 

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    Event date： 2017.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Improvement of Si Materials and Processes for Si power devices Invited International conference

    Shin-ichi Nishizawa

    7th International Workshop on Crystal Growth Technology  2017.7 

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    Event date： 2017.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  • Traning and educating crystal growth technology Invited International conference

    Shin-ichi Nishizawa

    7th International Workshop on Crystal Growth Technology  2017.7 

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    Event date： 2017.7

    Language：English   Presentation type：Symposium, workshop panel (public)  

    Country：Germany  

  • An Evaluation Circuit for DC-Link Capacitors Used in a Single-Phase PWM Inverter International conference

    Kazunori Hasegawa, Ichiro Omura, Shin-ichi Nishizawa

    PCIM Europe  2017.5 

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    Event date： 2017.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  • WBG Roadmap-Lead Applications Invited International conference

    Shin-ichi Nishizawa

    CLINT-WPE Workshop:Cooperation with Japan Wide Bandgap Lead Applications & Advanced Requirements  2017.3 

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    Event date： 2017.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  • Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers International conference

    Z. Lou, K. Wada, W. Saito, S.-I. Nishizawa

    ESREF 2021 : 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021  2021.10 

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    Event date： 2021.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：France  

  • Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection International conference

    M. Sagara, K. Wada, S.-I. Nishizawa, W. Saito

    ESREF 2021 : 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021  2021.10 

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    Event date： 2021.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：France  

  • Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology International conference

    Wataru Saito, Shin-Ichi Nishizawa

    ISPSD2021  2021.6 

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    Event date： 2021.5 - 2021.6

    Language：English   Presentation type：Symposium, workshop panel (public)  

    Country：Japan  

  • Accurate TCAD Simulation of Trench-Gate IGBTs and Its Application to Prediction of Carrier Lifetime Requirements for Future Scaled Devices Invited International conference

    M. Watanabe, N. Shigyo , T. Hoshii , K. Furukawa , K. Kakushima , K. Satoh , T. Matsudai , T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi , A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi , H. Iwai

    5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2021)  2021.4 

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    Event date： 2021.4

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  • 新世代Si-IGBTを支えるウェハ・プロセス技術

    西澤伸一

    日本学術振興会第145委員会　 第171回研究会  2021.2 

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    Event date： 2021.2

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：オンライン   Country：Japan  

  • 新世代Si-IGBTを支えるウェハ・プロセス技術

    西澤伸一

    2021.2 

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    Event date： 2021.2

    Language：Others  

    Country：Japan  

  • DCブレーカ応用のための並列SiC-MOSFET耐圧ばらつき許容範囲の検討

    Lou Zaiqi，齋藤渉，西澤伸一

    電気学会,電子デバイス/半導体電力変換合同研究会  2020.12 

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    Event date： 2020.12

    Language：Japanese   Presentation type：Symposium, workshop panel (public)  

    Venue：オンライン   Country：Japan  

  • DCブレーカ応用のための並列SiC-MOSFET耐圧ばらつき許容範囲の検討

    Lou Zaiqi, 齋藤渉, 西澤伸一

    電気学会,電子デバイス/半導体電力変換合同研究会  2020.12 

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    Event date： 2020.12

    Language：Others  

    Country：Japan  

  • 60-150 V 系フィールドプレートパワー MOSFET の損失低減に向けた設計指針

    小川大地, 齋藤渉, 西澤伸一

    電気学会,電子デバイス/半導体電力変換合同研究会  2020.12 

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    Event date： 2020.12

    Language：Japanese   Presentation type：Symposium, workshop panel (public)  

    Venue：オンライン   Country：Japan  

  • High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination International conference

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

    2020 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2020  2020.11 

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    Event date： 2020.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  • Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode International conference

    Taro Takamori, Keiji Wada, Wataru Saito and Shin-ichi Nishizawa

    31st EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2020.10 

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    Event date： 2020.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Greece  

  • Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test International conference

    Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa

    International Conference on Solid State Devices and Materials (SSDM)  2020.9 

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    Event date： 2020.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test International conference

    Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa

    2020.9 

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    Event date： 2020.9

    Language：Others  

    Country：Japan  

  • Modeling and simulation of Si IGBTs International conference

    N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi

    2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020  2020.9 

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    Event date： 2020.9 - 2020.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Modeling and simulation of Si IGBTs International conference

    N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi

    2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020  2020.9 

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    Event date： 2020.9 - 2020.10

    Language：Others  

    Country：Japan  

  • DCブレーカ応用のための並列SiC-MOSFET耐圧ばらつき許容範囲に関する研究

    Lou Zaiqi, 齋藤渉, 西澤伸一

    第28回電気情報通信学会九州支部学生講演会  2020.9 

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    Event date： 2020.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：オンライン   Country：Japan  

  • 低耐圧フィールドプレートパワーMOSFETの損失低減に向けた設計指針と性能限界

    小川大地, 齋藤渉, 西澤伸一

    第28回電気情報通信学会九州支部学生講演会  2020.9 

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    Event date： 2020.9

    Language：Others  

    Country：Japan  

  • 低耐圧フィールドプレートパワーMOSFETの損失低減に向けた設計指針と性能限界

    小川大地，齋藤渉，西澤伸一

    第28回電気情報通信学会九州支部学生講演会  2020.9 

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    Event date： 2020.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：オンライン   Country：Japan  

  • High Switching Controllability Trench Gate Design in Si-IGBTs International conference

    Wataru Saito; Shin-ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

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    Event date： 2020.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Austria  

  • Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation International conference

    Peng Luo, Sankara Narayanan, Ekkanath Madathil, Shin-ichi Nishizawa, Wataru Saito

    2020.9 

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    Event date： 2020.9

    Language：Others  

    Country：Austria  

    Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation

  • Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization International conference

    Ryohei Sato, Koichi Kakimoto, Wataru Saito, Shin Ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020  2020.9 

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    Event date： 2020.9

    Language：Others  

    Country：Austria  

  • Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization International conference

    Ryohei Sato, Koichi Kakimoto, Wataru Saito, Shin Ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020  2020.9 

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    Event date： 2020.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Austria  

  • Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation International conference

    Peng Luo; Sankara Narayanan Ekkanath Madathil; Shin-ichi Nishizawa; Wataru Saito

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

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    Event date： 2020.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Austria  

  • High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation International conference

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ichi Nishizawa, Wataru Saito

    2020 IEEE Applied Power Electronics Conference and Exposition (APEC)  2020.3 

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    Event date： 2020.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

    Peng Luo, Sankara Narayanan, Ekkanath Madathil, Shin-ichi Nishizawa, Wataru Saito

    2020 IEEE Applied Power Electronics Conference and Exposition (APEC)  2020.3 

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    Event date： 2020.3

    Language：Others  

    Country：United States  

  • Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation International conference

    Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ich Nishizawa, Wataru Saito

    65th Annual IEEE International Electron Devices Meeting, IEDM 2019  2019.12 

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    Event date： 2019.12

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • デバイスプロセスの高温熱負荷工程におけるSi基板中の転位挙動に関する数値計算

    佐藤 亮平, 高倉 俊彦, 伊藤 一夫, 更屋 拓哉, 平本 俊郎, 柿本 浩一, 西澤 伸一

    電気学会 電子デバイス／半導体電力変換合同研究会  2019.11 

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    Event date： 2019.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：仙台   Country：Japan  

  • 5Vゲート駆動による3300VスケーリングIGBTの動作実装

    更屋 拓哉, 伊藤 一夫, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋 邦之, 星井 拓也, 古川 和由, 渡辺 正裕, 執行 直之, 若林 整, 筒井 一生, 岩井 洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通, 平本 俊郎

    電気学会 電子デバイス／半導体電力変換合同研究会  2019.11 

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    Event date： 2019.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：仙台   Country：Japan  

  • CZシリコン結晶引き上げ過程における酸素偏析のモデル化

    劉 鑫, 原田 博文, 宮村 佳児, 韓学峰, 中野 智, 西澤 伸一, 柿本 浩一

    第48回結晶成長国内会議（JCCG-48）  2019.10 

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    Event date： 2019.10 - 2019.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：大阪   Country：Japan  

  • Evaluation of SiC-MOSFET by repetitive UIS tests for solid state circuit breaker International conference

    Mitsuhiko Sagara, Keiji Wada, Shin-ichi Nishizawa

    International Conference on Silicon Carbide and Related Materials 2019  2019.9 

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    Event date： 2019.9 - 2019.10

    Language：English  

    Country：Japan  

  • CZシリコン結晶引き上げ過程における酸素と炭素の偏析のモデル化

    劉 鑫, 原田 博文, 宮村 佳児, 韓学峰, 中野 智, 西澤 伸一, 柿本 浩一

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：札幌   Country：Japan  

  • TEGを用いたAlGaN/GaNヘテロ成長の２DEG側界面電荷への影響

    沖田 寛昌, 星井 拓也, 松橋 泰平, Indraneel Sanyal, Yu-Chin Chen, Ying-Hao Ju, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, Jen-Inn Chyi, 筒井 一生

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：札幌   Country：Japan  

  • 熱負荷工程におけるSi基板中の転位挙動に関する数値計算

    佐藤 亮平, 高倉 俊彦, 伊藤 一夫, 更屋 拓哉, 平本 俊郎, 柿本 浩一, 西澤 伸一

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：札幌   Country：Japan  

  • Impact of structural parameter scaling on on-state voltage in 1200V scaled IGBTs International conference

    Munetoshi Fukui, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto

    SSDM  2019.9 

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    Event date： 2019.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Turn-off loss improvement by IGBT scaling International conference

    Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto

    SSDM  2019.9 

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    Event date： 2019.9

    Language：English  

    Country：Japan  

  • Transient Global Modeling of CZ-Si crystal growth: Segregation of O & C during Pulling International conference

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto

    ICCGE19  2019.8 

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    Event date： 2019.7 - 2019.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • Transient Global Modeling for the Pulling Process of CZ-Si Crystal Growth: Principles, Formulation and Implementation International conference

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto

    ICCGE19  2019.7 

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    Event date： 2019.7 - 2019.8

    Language：English  

    Country：United States  

  • CO concentration in Cz furnace International conference

    Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

    ICCGE19  2019.7 

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    Event date： 2019.7 - 2019.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • 3300V Scaled IGBTs Driven by 5V Gate Voltage

    Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

    31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019  2019.5 

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    Event date： 2019.5

    Language：English  

    Country：China  

  • Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

    Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin Ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai

    31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019  2019.5 

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    Event date： 2019.5

    Language：English  

    Country：China  

  • Trend in Thermal Resistance of Advanced Power Modules International conference

    Nobuyuki Shishido, Masanori Tsukuda, Shin-ichi Nishizawa

    PCIM Europe  2019.5 

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    Event date： 2019.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  • CZ炉内のCO濃度

    宮村 佳児, 原田 博文, 中野 智, 西澤 伸一, 柿本 浩一

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

    ＣＺ炉内のＣＯガス濃度をガスクロマトグラフにより測定した。炉内の脱ガスによって発生するCOと、石英ルツボと黒鉛ルツボの反応に起因するCO、及び、Si融液に石英ルツボが溶解して発生するSiOガスと黒鉛部材の反応で発生するCO のそれぞれの寄与を分離して把握した。

  • 不均一横磁場下のSi-CZ結晶成長における酸素移動現象の理解

    柿本 浩一, Liu Xin, 中野 智, 宮村 佳児, 原田 博文, 西澤 伸一

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

  • Si-IGBTプロセスによるFZ-Siの少数キャリアライフタイムへの影響評価

    小林 弘人, 横川 凌, 木下 晃輔, 沼沢 陽一郎, 小椋 厚志, 西澤 伸一, 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 鈴木 慎一, 福井 宗利, 竹内 潔, 平本 俊郎

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京   Country：Japan  

    Si絶縁ゲートバイポーラトランジスタ(Si-IGBT)は高耐圧パワー半導体デバイスとして今後の主流になると期待され、3Dスケーリング等の開発が進められている。さらに、Si-IGBTの性能向上にはキャリアライフタイム制御も重要である。
    Si-IGBT製造には、周囲に空乏層を作り耐圧を高めるためにガードリングを形成する必要がある。このガードリングを形成するプロセスでは、1100℃、3 hourの高温ウエット酸化処理で約1 μmのマスク酸化膜を形成し、リソグラフィとエッチングでパターンを形成し、Bイオン注入を行う。続いて1100℃、20 hourの拡散処理を行なっている。本研究では、高温ウエット酸化処理プロセスにより、酸素がFZ-Si中に注入され、少数キャリアライフタイムが減少することを見出したので報告する。

  • パワーデバイス用シリコンウェーハのイオン注入欠陥評価 Invited

    中川 聰子, 南 俊郎, 石川 高志, 西澤 伸一

    第6回パワーデバイス用シリコンおよび関連半導体材料に関する研究会  2018.12 

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    Event date： 2018.12

    Language：Japanese  

    Venue：横須賀市   Country：Japan  

  • Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss International conference

    T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, Shinichi Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

    64th Annual IEEE International Electron Devices Meeting, IEDM 2018  2018.12 

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    Event date： 2018.12

    Language：English  

    Country：United States  

  • Numerical analyses and experimental validations on transport and control of carbon in CZ-Si crystal growth International conference

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto

    The Forum on the Science and Technology of Silicon Materials 2018  2018.11 

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    Event date： 2018.11

    Language：English  

    Country：Japan  

  • Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform International conference

    Takuya Hoshii, Shuma Tsuruta, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui

    The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

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    Event date： 2018.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • 提拉法单晶硅生长系统中碳杂质输运与控制的数值模拟与实验验证 Invited

    刘鑫, 原田博文, 宫村佳儿, 韩学峰, 中野智, 西泽伸一, 柿本浩一

    2018.11 

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    Event date： 2018.11

    Language：Others   Presentation type：Oral presentation (general)  

    Venue：西安   Country：Colombia  

  • SiCパワーデバイスを対象とした繰り返しUIS試験による特性評価

    相良光彦, 和田圭二, 西澤伸一

    電気学会電子デバイス・半導体電力変換合同研究会  2018.11 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：川崎市   Country：Japan  

  • Numerical analyses and experimental validations on transport and control of carbon in in Czochralski silicon crystal growth

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto

    2018.11 

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    Event date： 2018.10 - 2018.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Numerical Analyses and Experimental Validations on Transport and Control of Carbon in Czochralski Silicon Crystal Growth International conference

    Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Xin Liu

    International Workshop on Modeling in Crystal Growth9 (IWMCG9)  2018.10 

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    Event date： 2018.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • シリコンウェーハにおけるボロンイオン注入ダメージのCL評価

    中川 聰子, 南 俊郎, 石川 高志, 西澤 伸一

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋市   Country：Japan  

  • Si-IGBTプロセスによるFZ-Siの少数キャリアライフタイムへの影響評価

    小林 弘人, 横川 凌, 木下 晃輔, 沼沢 陽一郎, 小掠 厚志, 西澤 伸一, 更屋 拓也, 伊藤 一夫, 高倉 俊彦, 鈴木 慎一, 福井 宗利, 竹内 潔, 平本 俊郎

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋市   Country：Japan  

  • AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響

    鶴田 脩真, 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋市   Country：Japan  

  • Numerical analyses and experimental validations on transport and control of carbon in CZ-Si crystal growth International conference

    Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto

    the Sixth European Conference on Crystal Growth (ECCG6)  2018.9 

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    Event date： 2018.9

    Language：English  

    Country：Bulgaria  

  • Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately International conference

    T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

    48th European Solid-State Device Research Conference, ESSDERC 2018  2018.9 

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    Event date： 2018.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  • 繰り返しUIS試験におけるSiCスイッチング素子の劣化評価

    相良 光彦, 和田 圭二, 西澤 伸一

    電気学会産業応用部門大会（JIASC2018)  2018.8 

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    Event date： 2018.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：横浜市   Country：Japan  

  • New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment International conference

    K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

    32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018  2018.6 

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    Event date： 2018.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  • Silicon crystal growth of solar cells: Lessons learned from the pasts International conference

    Koichi Kakimoto, Satosi Nakano, Yoshiji Miyamura, Hirofumi Harada, Xin Liu, Xuefeng Han, and Shin-ichi Nishizawa

    10th International Workshop on Crystalline Silicon for Solar Cells  2018.4 

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    Event date： 2018.4

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • 3D scaling of Si-IGBT Invited International conference

    H. Iwai, K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi

    EUROSOI-ULIS 2018  2018.3 

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    Event date： 2018.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Spain  

  • Si-IGBTプロセスによるFz-Siの少数キャリアライフタイムへの影響評価

    小林弘人, 横川凌, 鈴木貴博, 沼沢陽一郎, 小椋厚志, 西澤伸一, 更屋拓哉, 伊藤一夫, 高倉俊彦, 鈴木慎一, 福井宗利, 竹内潔, 平本俊郎

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date： 2018.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学（東京都）   Country：Japan  

  • 分極接合基板のAlGaN/GaN界面における界面準位

    星井 拓也, 高山 留美, 鶴田 脩真, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生

    第65回応用物理学会 春季学術講演会  2018.3 

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    Event date： 2018.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学（東京都）   Country：Japan  

    分極接合による高濃度二次元正孔ガスの形成技術を利用したPチャネルFETのデバイス特性をシミュレーションで検討するに当たり、AlGaN/GaN界面に生じる二次元正孔／電子ガスを枯渇させるバックゲート電圧が実測と大きく乖離する現象が見られた。本講演ではAlGaN/GaN界面に界面準位を想定することで実測を一部よく再現する結果が得られたので報告する。

  • 高効率シリコン太陽電池用単結晶育成と評価の温故知新

    柿本 浩一, 宮村 佳児, 原田 博文, Xin Liu, Han Xuefeng, 中野 智, 西澤 伸一

    第65回応用物理学会 春季学術講演会  2018.3 

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    Event date： 2018.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学（東京都）   Country：Japan  

  • 3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat) International conference

    K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

    2017.10 

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    Event date： 2017.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  • Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle Invited International conference

    K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. akakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

    International Conference on Solid State Devices and Materials (SSDM)  2017.9 

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    Event date： 2017.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  • Experimental verification of a 3D scaling principle for low V ce(sat) IGBT

    K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, Shinichi Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

    62nd IEEE International Electron Devices Meeting, IEDM 2016  2016.12 

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    Event date： 2016.12

    Language：English  

    Country：United States  

  • A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

    Kazunori Hasegawa, Ichiro Omura, Shinichi Nishizawa

    31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016  2016.3 

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    Event date： 2016.3

    Language：English  

    Country：United States  

  • Wafer requirement for future power devices

    Shinichi Nishizawa

    35th IEEE Region 10 Conference, TENCON 2015  2015.11 

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    Event date： 2015.11

    Language：English  

    Country：Macao  

  • An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

    Akira Nakajima, Shinichi Nishizawa, Shunsuke Kubota, Rei Kayanuma, Kazuo Tsutsui, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

    37th IEEE International Symposium on Workload Characterization, IISWC 2015  2015.10 

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    Event date： 2015.10

    Language：English  

    Country：United States  

  • The silicon on diamond structure by low-temperature bonding technique

    Sethavut Duangchan, Yusuke Uchikawa, Yusuke Koishikawa, Baba Akiyoshi, Kentaro Nakagawa, Satoshi Matsumoto, Masataka Hasegawa, Shinichi Nishizawa

    2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015  2015.5 

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    Event date： 2015.5

    Language：English  

    Country：United States  

  • Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

    Akira Nakajima, Wataru Saito, Shinichi Nishizawa, Hiromichi Ohashi

    2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015  2015.5 

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    Event date： 2015.5

    Language：English  

    Country：Germany  

  • GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

    Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

    27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015  2015.5 

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    Event date： 2015.5

    Language：English  

    Country：China  

  • High-speed dicing of SiC wafers by femtosecond pulsed laser

    Akira Nakajima, Yosuke Tateishi, Hiroshi Murakami, Hidetomo Takahashi, Michiharu Ota, Ryoji Kosugi, Takeshi Mitani, Shinichi Nishizawa, Hiromichi Ohashi

    European Conference on Silicon Carbide and Related Materials, ECSCRM 2014  2014.9 

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    Event date： 2014.9

    Language：English  

    Country：France  

  • One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

    Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

    26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014  2014.6 

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    Event date： 2014.6

    Language：English  

    Country：United States  

  • Experimental investigation of normally-on type bidirectional switch for indirect Matrix Converters

    Kyungmin Sung, Ryuji Iijima, Shinichi Nishizawa, Isami Norigoe, Hiromichi Ohashi

    7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014  2014.5 

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    Event date： 2014.5

    Language：English  

    Country：Japan  

  • 2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

    Yuji Matsuoka, Keiji Wada, Mizuki Nakahara, Kazuto Takao, Kyungmin Sung, Hiromichi Ohashi, Shinichi Nishizawa

    7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014  2014.1 

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    Event date： 2014.5

    Language：English  

    Country：Japan  

  • Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

    Pucheng Liu, Kuniyuki Kakushima, Hiroshi Iwai, Akira Nakajima, Toshiharu Makino, Masahiro Ogura, Shinichi Nishizawa, Hiromichi Ohashi

    1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013  2013.10 

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    Event date： 2013.10

    Language：English  

    Country：United States  

  • 4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    2013 2nd International Conference on Electric Power Equipment - Switching Technology, ICEPE-ST 2013  2013.10 

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    Event date： 2013.10

    Language：English  

    Country：Japan  

  • Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013  2013.9 

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    Event date： 2013.9

    Language：English  

    Country：United States  

  • Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013  2013.9 

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    Event date： 2013.9

    Language：English  

    Country：United States  

  • Maximum switching frequency characterization of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair power module

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013  2013.9 

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    Event date： 2013.9

    Language：English  

    Country：United States  

  • Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

    Shinichi Nishizawa

    2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting  2012.10 

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    Event date： 2012.10

    Language：English  

    Country：United States  

  • 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

    Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

    4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012  2012.9 

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    Event date： 2012.9

    Language：English  

    Country：United States  

  • Design and implementation of a non-destructive test circuit for SiC-MOSFETs

    Keiji Wada, Shinichi Nishizawa, Hiromichi Ohashi

    2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012  2012.6 

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    Event date： 2012.6

    Language：English  

    Country：China  

  • Diamond power devices - Possbility of high voltage applicatios

    S. Yamasaki, T. Matsumoto, K. Oyama, H. Kato, M. Ogura, D. Takeuchi, T. Makino, Shinichi Nishizawa, H. Oohash, H. Okushi

    2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011  2011.10 

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    Event date： 2011.10

    Language：English  

    Country：China  

  • Analysis of growth velocity of SiC growth by the physical vapor transport method

    Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shinichi Nishizawa

    14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011  2011.9 

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    Event date： 2011.9

    Language：English  

    Country：United States  

  • Bulk and surface effects on the polytype stability in SiC crystals

    14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011  2011.9 

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    Event date： 2011.9

    Language：English  

    Country：United States  

  • Design and analysis of a bus bar structure for a medium voltage inverter

    Masato Ando, Keiji Wada, Kazuto Takao, Takeo Kanai, Shinichi Nishizawa, Hiromichi Ohashi

    2011 14th European Conference on Power Electronics and Applications, EPE 2011  2011.8 

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    Event date： 2011.8 - 2011.9

    Language：English  

    Country：United Kingdom  

  • Effect of low frequency magnetic field on SiC solution growth

    8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010  2010.8 

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    Event date： 2010.8 - 2010.9

    Language：English  

    Country：Norway  

  • Calculation of lattice constant of 4H-SiC as a function of impurity concentration

    Tsubasa Matsumoto, Shinichi Nishizawa, Satoshi Yamasaki

    13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009  2009.10 

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    Event date： 2009.10

    Language：English  

    Country：Germany  

  • Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD)

    C. Ota, J. Nishio, K. Takao, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

    7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008  2008.9 

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    Event date： 2008.9

    Language：English  

    Country：Spain  

  • Demonstration of motor drive with SiC normally-off IEMOSFET/ SBD power converter

    S. Harada, Y. Hayashi, K. Takao, A. Kinoshita, M. Kato, M. Okamoto, T. Kato, Shinichi Nishizawa, T. Yatsuo, K. Fukuda, H. Ohashi, K. Arai

    19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07  2007.5 

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    Event date： 2007.5

    Language：English  

    Country：Korea, Republic of  

  • Effect of radiation in solid during SiC sublimation growth

    Shinichi Nishizawa, Shin Ichi Nakashima, Tomohisa Kato

    2006 MRS Spring Meeting  2006.4 

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    Event date： 2006.4

    Language：English  

    Country：United States  

  • Silicon carbide growth C/Si ratio evaluation and modeling

    Michel Pons, Shinichi Nishizawa, Peter Wellmann, Elisabeth Blanquet, Didier Chaussende, Jean Marc Dedulle

    2006 MRS Spring Meeting  2006.4 

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    Event date： 2006.4

    Language：English  

    Country：United States  

  • Activation treatment of ion implanted dopants using hybrid super RTA equipment

    Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shinichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

    International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)  2005.9 

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    Event date： 2005.9

    Language：English  

    Country：United States  

  • Recent progress of SiC hot-wall epitaxy and its modeling

    Shinichi Nishizawa, Michel Pons

    International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)  2005.9 

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    Event date： 2005.9

    Language：English  

    Country：United States  

  • Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties

    C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

    International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)  2005.9 

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    Event date： 2005.9

    Language：English  

    Country：United States  

  • Numerical simulation of SIC processes A characterization tool for the design of epitaxial structures in electronics

    M. Pons, Shinichi Nishizawa, P. Wellmann, M. Ucar, E. Blanquet, J. M. Dedulle, F. Baillet, D. Chaussende, C. Bernard, R. Madar

    15th European Conference on Chemical Vapor Deposition, EUROCVD-15  2005.9 

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    Event date： 2005.9

    Language：English  

    Country：Germany  

  • Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals

    Tomohisa Kato, Kazutoshi Kojima, Shinichi Nishizawa, Kazuo Arai

    5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004  2004.8 

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    Event date： 2004.8 - 2004.9

    Language：English  

    Country：Italy  

  • Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

    Shinichi Nishizawa, Michel Pons

    5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004  2004.8 

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    Event date： 2004.8 - 2004.9

    Language：English  

    Country：Italy  

▼display all

MISC

  • Si IGBTの3次元デバイス・シミュレーション-物理モデルの検討と実測結果との比較-

    執行直之, 渡辺正裕, 角嶋邦之, 星井拓也, 古川和由, 中島昭, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊里也, 若林整, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

    電子情報通信学会技術研究報告(Web)   2020.10

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  • トレンチゲート型si-IGBTの3次元精密TCADシミュレーション

    渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊里也, 若林整, 中島昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

    電子情報通信学会技術研究報告   2019.10

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  • TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響

    沖田寛昌, 星井拓也, 松橋泰平, SANYAL Indraneel, CHEN Yu-Chih, JU Ying-Hao, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, CHYI Jen-Inn, 筒井一生

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2019.9

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  • AlGaN/GaN界面準位が分極接合基板上p-MOSFETの電流特性に与える影響

    鶴田脩真, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2018.9

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  • 分極接合基板のAlGaN/GaN界面における界面準位

    星井拓也, 高山留美, 鶴田脩真, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2018.3

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  • 分極接合基板上pチャネルGaN MOS構造の容量特性についての検討

    高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

    電子情報通信学会技術研究報告   2017.10

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  • 分極接合基板上PチャネルGaN MOS構造の特性評価

    高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2017.9

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  • 分極接合基板上pチャネルGaN MOS構造のインピーダンス解析

    高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2016.9

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  • P/N混載GaNパワー集積回路技術の現状

    中島昭, 西澤伸一, 大橋弘通, 筒井一生, 岩井洋, 角嶋邦之, 若林整, UNNI V., NARAYANAN E. M. S.

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2016.9

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  • アルミ電解コンデンサ損失の矩形波電流流入時の損失推定 (半導体電力変換 モータドライブ合同研究会・半導体電力変換及びモータドライブ一般)

    長谷川 一徳, 上妻 健太郎, 津崎 孝典, 大村 一郎, 西澤 伸一

    電気学会研究会資料. MD   2016.8

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    Language：Japanese  

  • AlGaN/GaN系ノーマリーオフPチャネルMOS-HFETにおける基板バイアス効果

    久保田俊介, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2016.3

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  • 広い温度範囲で動作するワンチップGaNパワー集積回路技術 (電子デバイス 半導体電力変換合同研究会・パワーデバイス・パワーエレクトロニクスとその実装技術)

    中島 昭, 西澤 伸一, 大橋 弘通, 萱沼 怜, 筒井 一生, 久保田 俊介, 角嶋 邦之, 若林 整, 岩井 洋

    電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan   2015.10

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  • 分極接合GaNウエハを用いたパワー集積回路

    萱沼怜, 久保田俊介, 中島昭, 西澤伸一, 大橋弘通, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2015.3

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  • AlGaN/GaN系PチャネルHFETのMOS構造によるノーマリーオフ化

    久保田俊介, 萱沼怜, 中島昭, 西澤伸一, 大橋弘通, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2015.3

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  • 分極接合プラットフォームを用いた窒化ガリウムN/Pトランジスタのワンチップ集積化技術

    中島昭, 西澤伸一, 大橋弘通, 米澤宏昭, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    電気学会電子デバイス研究会資料   2014.11

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  • デバイスシミュレーションによるGaN系ジャンクションレス・トランジスタにおける閾値電圧特性の検証

    YOON Minjae, 中島昭, 角嶋邦之, 片岡好則, 西山彰, 若林整, 名取研二, 筒井一生, 西澤伸一, 大橋弘通, 杉井信之, 岩井洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2014.9

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  • 2次元正孔ガスへのコンタクト形成におけるSiO2堆積プロセスの影響

    久保田俊介, 萱沼怜, 中島昭, 西澤伸一, 大橋弘通, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2014.9

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  • AlGaN/GaN系Pチャネル型HFETにおけるリーク電流制御

    萱沼怜, 久保田俊介, 中島昭, 西澤伸一, 大橋弘通, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2014.9

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  • 超短パルスレーザを用いたSiCウエハの高速ダイシング加工

    中島昭, 立石陽介, 村上寛, 高橋秀知, 太田道春, 小杉亮治, 三谷武志, 西澤伸一, 大橋弘通

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2014.3

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  • デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証

    YOON Minjae, 寺山一真, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2014.3

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  • デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算

    寺山一真, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2014.3

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  • 広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET

    米澤宏昭, 萱沼怜, 中島昭, 西澤伸一, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2014.3

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  • AlGaN/GaN系pチャネルHFETの製作

    米澤宏昭, 中島昭, 西澤伸一, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2013.9

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  • 低温におけるGaN/AlGaNヘテロ界面の2次元正孔ガスの伝導機構

    LIU P., 中島昭, 角嶋邦之, 牧野俊晴, 小倉政彦, 西澤伸一, 岩井洋, 大橋弘通

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2013.3

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  • Analysis of growth velocity of SiC growth by the physical vapor transport method

    Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin-ichi Nishizawa

    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2   2012.3

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    DOI： 10.4028/www.scientific.net/MSF.717-720.25

  • SiC Bulk Single Crystal Growth by Sublimation Method : Use of Numerical Simulation

    NISHIZAWA Shin-ichi, KATO Tomohisa, KITOU Yasuo, HIROSE Fusao, OYANAGI Naoki, YAMAGUCHI Hirotaka, ARAI Kazuo

    IEICE transactions on electronics   2003.4

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    SiC Bulk Single Crystal Growth by Sublimation Method : Use of Numerical Simulation

  • シリコン液柱内の対流と温度変動

    中村 新, 日比谷 孟俊, 今石 宣之, 西澤 伸一, 加藤 浩和, 小山 正人

    1997.10

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    Language：English  

  • Experimental Results of Oscillatory Marangoni Convection in a Liquid Bridge under Normal Gravity

    Hirata Akira, Nishizawa Shin-ichi, Sakurai Masato

    JASMA : Journal of the Japan Society of Microgravity Application   1997.4

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    Language：English  

    Experimental Results of Oscillatory Marangoni Convection in a Liquid Bridge under Normal Gravity

  • Measurement of Temperature Fluctuations in Marangoni Convection in a Half-zone Silicon Melt on Board the TR-IA-4 Rocket (特集 TR-IA4号機)

    1997.2

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    Language：English  

  • シリコン液柱内マランゴニ対流の温度振動と温度分布

    中村 新, 柿本 浩一, 日比谷 孟俊, 今石 宣之, 西澤 伸一, 平田 彰, 向井 楠宏, 依田 真一, 森田 知二

    1996.10

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    Language：English  

  • 微小重力状態を利用した半導体シリコンメルトのマランゴニ対流の温度振動の精密測定とマランゴニ対流モード

    日比谷 孟俊, 中村 新, 柿本 浩一, 今石 宣之, 西澤 伸一, 平田 彰, 向井 楠宏, 松井 捷明, 横田 孝夫, 依田 真一, 森田 知二

    日本結晶成長学会誌   1996.7

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    Language：Japanese  

  • TR-IA-4号小型ロケットによるシリコンメルトマランゴニ対流の温度振動測定

    中村 新, 柿本 浩一, 日比谷 孟俊, 西澤 伸一, 平田 彰, 今石 宣之, 足立 聡, 依田 真一, 中村 富久, 鮫島 浩人

    1995.10

    　More details

    Language：English  

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Professional Memberships

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Committee Memberships

  • 九州大学   X線取扱い主任者  

    2021.4 - 2023.3   

    　 More details

    Committee type：Other

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  • 九州大学   留学生センター委員  

    2021.4 - 2023.3   

    　 More details

    Committee type：Other

    researchmap

  • Executive   Domestic

    2019.6 - 2024.5   

  • 一般社団法人NPERC-J   上級アカデミア会員・技術部長   Domestic

    2019.6 - 2024.5   

  • Organizer   Domestic

    2019.4 - 2023.3   

  • 応用物理学会先進パワーデバイス分科会   幹事  

    2019.4 - 2023.3   

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  • Councilor   Domestic

    2016.4 - 2023.10   

  • 日本結晶成長学会   評議員  

    2016.4   

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  • Organizer   Domestic

    2009.4 - 2022.3   

  • 日本学術振興会145委員会   幹事  

    2009.4   

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Academic Activities

  • Program Chair International contribution

    The 8th International Symposium on Advanced Science and Technology of Silicon Materials  （ Okayama Japan ） 2022.11

    　More details

    Type：Competition, symposium, etc. 

  • The 8th International Symposium on Advanced Science and Technology of Silicon Materials International contribution

    （ Okayama Japan ） 2022.11

    　More details

    Type：Competition, symposium, etc. 

    researchmap

  • 福岡先端半導体拠点構築事業・アドバイザリーボード委員

    福岡県  2021.11 - 2023.3

    　More details

  • 幹事

    日本学術振興会第145委員会第171回研究会  （ 九州大学 ） 2021.2 - 2021.6

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    Type：Competition, symposium, etc. 

  • Screening of academic papers

    Role(s)： Peer review

    2021

    　More details

    Type：Peer review 

    Number of peer-reviewed articles in foreign language journals：10

    Proceedings of International Conference Number of peer-reviewed papers：6

  • Electronics Letters International contribution

    Role(s)： Peer review

    2020.4 - 2021.6

    　More details

    Type：Academic society, research group, etc. 

  • Superlattices and Microstructures International contribution

    Role(s)： Peer review

    2020.4 - 2021.6

    　More details

    Type：Academic society, research group, etc. 

  • Materials Science in Semiconductor Processing International contribution

    Role(s)： Peer review

    2020.4 - 2021.6

    　More details

    Type：Academic society, research group, etc. 

  • Microelectronics Journal International contribution

    Role(s)： Peer review

    2020.4 - 2021.6

    　More details

    Type：Academic society, research group, etc. 

  • その他 International contribution

    （ 東京 Japan ） 2020.1

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    Type：Competition, symposium, etc. 

    Number of participants：100

  • Screening of academic papers

    Role(s)： Peer review

    2020

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    Type：Peer review 

    Number of peer-reviewed articles in foreign language journals：6

    Proceedings of International Conference Number of peer-reviewed papers：5

  • その他

    日本学術振興会「結晶加工と評価技術」第145委員会 第165回研究会  （ 関西学院大学 Japan ） 2019.11

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    Type：Competition, symposium, etc. 

  • Screening of academic papers

    Role(s)： Peer review

    2019

    　More details

    Type：Peer review 

    Number of peer-reviewed articles in foreign language journals：7

    Proceedings of International Conference Number of peer-reviewed papers：10

  • その他 International contribution

    （ 岡山市 Japan ） 2018.11

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    Type：Competition, symposium, etc. 

  • その他 International contribution

    （ Kona(Hawaii） UnitedStatesofAmerica ） 2018.10

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    Type：Competition, symposium, etc. 

    Number of participants：100

  • その他 International contribution

    （ 東京 Japan ） 2018.10

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    Type：Competition, symposium, etc. 

  • Journal of Crystal Growth International contribution

    2018.10 - 2020.5

    　More details

    Type：Academic society, research group, etc. 

  • Screening of academic papers

    Role(s)： Peer review

    2018

    　More details

    Type：Peer review 

    Number of peer-reviewed articles in foreign language journals：5

    Proceedings of International Conference Number of peer-reviewed papers：10

  • その他 International contribution

    （ 東京 Japan ） 2017.9

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    Type：Competition, symposium, etc. 

  • その他

    第5回パワーデバイス用シリコンおよび関連半導体材料に関する研究会  （ 国立研究開発法人産業技術総合研究所 つくば共用講堂 Japan ） 2017.2

    　More details

    Type：Competition, symposium, etc. 

  • ECCE Asia International contribution

    Role(s)： Peer review

    2017.2 - 2022.6

    　More details

    Type：Academic society, research group, etc. 

  • IEEE International contribution

    Role(s)： Peer review

    2017.2 - 2020.6

    　More details

    Type：Academic society, research group, etc. 

  • Journal of Crystal Growth International contribution

    Role(s)： Peer review

    2017.2 - 2020.6

    　More details

    Type：Academic society, research group, etc. 

  • Japanese Journal of Applied Physics

    Role(s)： Peer review

    2017.2 - 2020.6

    　More details

    Type：Academic society, research group, etc. 

  • Microelectronics Reliability International contribution

    Role(s)： Peer review

    2017.2 - 2020.6

    　More details

    Type：Academic society, research group, etc. 

  • IET Power Electronics International contribution

    Role(s)： Peer review

    2017.2 - 2020.6

    　More details

    Type：Academic society, research group, etc. 

  • Screening of academic papers

    Role(s)： Peer review

    2017

    　More details

    Type：Peer review 

    Number of peer-reviewed articles in foreign language journals：4

    Proceedings of International Conference Number of peer-reviewed papers：20

  • その他

    学術振興会第145委員会幹事  2009.4 - Present

    　More details

    Type：Competition, symposium, etc. 

  • 学術振興会第145委員会幹事

    日本学術振興会  2009.4 - 2023.3

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Research Projects

  • 次世代パワー半導体プロセス技術開発

    2024

    　 More details

    Grant type：Donation

  • 次世代パワー半導体プロセス技術開発

    2023

    　 More details

    Grant type：Donation

  • 大口径インテリジェント・シリコンパワー半導体の開発

    2021.6 - 2026.2

    経済産業省／NEDO 

    　 More details

    Authorship：Principal investigator 

    高品質量産型300mm新型シリコンウェハと、それをベースにしたパワーデバイスと、AI制御によるCMOS融合パワーモジュールを実証、実現するための取り組みとして以下を実施する。
    産学連携・一括共同研究型プロジェクトで、5年間、総額約25億円。

  • 大口径インテリジェント・シリコンパワー半導体の開発

    2021 - 2025

    省エネエレクトロニクスの製造基盤強化に向けた技術開発事業

    　 More details

    Authorship：Principal investigator  Grant type：Contract research

  • 新世代パワー半導体の開発/大口径インテリジェント・シリコンパワー半導体の開発

    2021 - 2023

    日本学術振興会  科学研究費助成事業  基盤研究(C)

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    Authorship：Principal investigator  Grant type：Scientific research funding

  • New SiC bulk growth reactor design International coauthorship

    2020.4 - 2025.3

    　 More details

    Authorship：Principal investigator 

  • New SiC bulk growth reactor design

    2020.4 - 2023.2

    Joint research

    　 More details

    Authorship：Principal investigator  Grant type：Other funds from industry-academia collaboration

  • 応用力学研究所研究資金

    2020

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    Grant type：Donation

  • 電力エネルギー有効利用のための新世代パワーデバイスの提案 （英国・シェフィールド大学 EKKANATH MADATHIL Sankara Narayanan教授）

    2019

    日本学術振興会  外国人研究者招へい事業（外国人招へい研究者（短期））

    　 More details

    Authorship：Principal investigator  Grant type：Joint research

  • 速度論的表面エネルギーを考慮したSiC多形制御結晶成長プロセス

    2018.4 - 2021.3

    　 More details

    Authorship：Principal investigator 

  • 速度論的表面エネルギーを考慮したSiC多形制御結晶成長プロセス

    Grant number：18H01891  2018 - 2020

    日本学術振興会  科学研究費助成事業  基盤研究(B)

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    Authorship：Principal investigator  Grant type：Scientific research funding

  • SiC半導体の遮断器応用技術に関する研究

    2017.12 - 2019.3

    受託研究

    　 More details

    Authorship：Principal investigator  Grant type：Other funds from industry-academia collaboration

  • 低ネガワットコストウェハの研究

    2017.12 - 2019.3

    受託研究

    　 More details

    Authorship：Principal investigator  Grant type：Other funds from industry-academia collaboration

  • 低ネガワットコストウェハの研究

    2017.12 - 2019.3

    一般社団法人NPERC-J 

    　 More details

    Authorship：Principal investigator 

    CZ法によるシリコン単結晶成長において、比抵抗を成長初期から成長終了までデバイス要求仕様範囲に収めることを目標に、ドーピング技術、結晶成長炉全体の最適化、プロセスモニタリング技術などを、結晶成長炉総合解析を用いて検討し、実プロセス装置への提案を行う。

  • SiC半導体の遮断器応用技術に関する研究

    2017.12 - 2019.3

    一般社団法人NPERC-J 

    　 More details

    Authorship：Principal investigator 

    SiCパワー半導体の動作特性、および破壊物理を明確にすることで、Siパワーデバイスに対するSiCの優位性を定量的に明確にする。特にSiCの低オン抵抗・大破壊耐量に着目し、SiCリードアプリケーションとしてDCブレーカーを取り上げ、その実証を行う。

  • 新世代Si-IGBT と応用基本技術の研究開発

    2017.2 - 2020.2

    　 More details

    Authorship：Coinvestigator(s) 

    従来技術の延長線上にない我が国独自の「IGBT のスケーリング則」に基づいた「新世代 Si-IGBT と応用基本技術」を産学官が一体となり実用化を念頭に開発・実証し、民間 企業が早期に実用化できる環境を作ることを目的とする。

  • チョクラルスキー法を用いた高品質・大口径Si-IGBT用ウェハ技術の開発

    2017.2 - 2018.2

    　 More details

    Authorship：Principal investigator 

    n-層ライフタイムがIGBTエネルギー損失に与える影響の研究。

  • 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト／研究開発項目①(10) 新世代Ｓｉパワーデバイス技術開発／新世代Si-IGBTと応用基本技術の研究開発

    2017 - 2019

    NEDO（低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト）

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    Authorship：Coinvestigator(s)  Grant type：Contract research

  • チョクラルスキー法を用いた高品質・大口径Si-IGBT用ウェハ技術の開発

    2017

    NEDO

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    Authorship：Coinvestigator(s)  Grant type：Contract research

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Class subject

  • パワーデバイス材料工学

    2024.4 - 2024.6   Spring quarter

  • デバイス理工学特論Ⅲ

    2023.10 - 2024.3   Second semester

  • 総合理工学修士実験

    2023.4 - 2024.3   Full year

  • 総合理工学修士演習

    2023.4 - 2024.3   Full year

  • 総合理工学修士演習

    2023.4 - 2024.3   Full year

  • パワーデバイス材料工学

    2023.4 - 2023.6   Spring quarter

  • 総合理工学修士演習

    2022.4 - 2023.3   Full year

  • 総合理工学修士実験

    2022.4 - 2023.3   Full year

  • パワーデバイス材料工学

    2022.4 - 2022.6   Spring quarter

  • パワーデバイス材料工学

    2021.4 - 2021.6   Spring quarter

  • パワーデバイス材料工学

    2021.4 - 2021.6   Spring quarter

  • 電気エネルギー変換工学

    2020.10 - 2021.3   Second semester

  • 電気エネルギー変換工学

    2020.10 - 2021.3   Second semester

  • 力学Ⅰ

    2020.10 - 2021.3   Second semester

  • 力学Ⅰ

    2020.10 - 2021.3   Second semester

  • 航空宇宙構造動力学講究

    2020.4 - 2021.3   Full year

  • 航空宇宙工学実験

    2020.4 - 2021.3   Full year

  • 航空宇宙工学演習 I

    2020.4 - 2021.3   Full year

  • 航空宇宙工学演習 II

    2020.4 - 2021.3   Full year

  • 電気エネルギー変換工学

    2019.10 - 2020.3   Second semester

  • 力学Ⅰ

    2019.10 - 2020.3   Second semester

  • 力学Ⅰ

    2018.10 - 2019.3   Second semester

  • 電気エネルギー変換工学

    2018.10 - 2019.3   Second semester

  • 力学Ⅰ

    2017.10 - 2018.3   Second semester

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Visiting, concurrent, or part-time lecturers at other universities, institutions, etc.

  • 2024  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2023  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2022  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2021  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2020  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2019  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2018  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan 

  • 2017  学習院大学理学部  Classification:Part-time lecturer  Domestic/International Classification:Japan 

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Outline of Social Contribution and International Cooperation activities

  • 産学連携コンソーシアムである一般社団法人NPERC-Jの理事、上級アカデミア会員、中核研究拠点として、新世代パワーエレクトロニクスに関する調査・研究活動を牽引している。また欧米の産学連携コンソーシアムとコンソーシアム間で連携協定を結び、ロードマップ共有、共同研究の日本代表者として牽引している。

Media Coverage

  • 4/2（月）16：15～「仲谷一志と下田文代のよなおし堂」電話インタビュー 玄海原発の蒸気漏れについて TV or radio program

    2018.4

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    4/2（月）16：15～「仲谷一志と下田文代のよなおし堂」電話インタビュー 玄海原発の蒸気漏れについて

  • 3/23（金）20：15～「仲谷一志と下田文代の夜なおし堂」電話インタビュー エネルギーにおける日本の抱える問題（資源の枯渇など）や、これから将来のエネルギー生産の在り方など、エネルギー全体についてのインタビュー TV or radio program

    2018.3

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    3/23（金）20：15～「仲谷一志と下田文代の夜なおし堂」電話インタビュー エネルギーにおける日本の抱える問題（資源の枯渇など）や、これから将来のエネルギー生産の在り方など、エネルギー全体についてのインタビュー

Activities contributing to policy formation, academic promotion, etc.

  • 2022.10 - 2024.3   IEC

    White Paper:Power semiconductors for an energy-wise society

  • 2021.11 - 2025.3   福岡県

    福岡県半導体・デジタル産業振興会議・企画運営委員

  • 2021.11 - 2025.3   福岡県

    福岡先端半導体拠点構築事業・アドバイザリーボード委員

  • 2019.3 - 2019.6   文部科学省研究開発局・経済産業省産業技術環境局

    エネルギー・環境技術のポテンシャル・実用化評価検討会委員

  • 2018.11 - 2020.5   経済産業省情報産業課

    パワー半導体に関する勉強会委員

Acceptance of Foreign Researchers, etc.

  • University of Sheffield

    Acceptance period： 2019.6 - 2019.7   （Period）：1 month or more

    Nationality：India

    Business entity：Japan Society for the Promotion of Science

  • SIMaP, CNRS – Grenoble University

    Acceptance period： 2019.3   （Period）：Less than 2 weeks

    Nationality：France

    Business entity：On-campus funds

  • University of Sheffield

    Acceptance period： 2019.3   （Period）：Less than 2 weeks

    Nationality：India

    Business entity：On-campus funds