Mechanism of gate voltage spike under digital gate control at IGBT switching operations Reviewed International journal

#Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Power Electronic Devices and Components   7   2024.4

Study on stress in trench structures during silicon IGBTs process-oxidation

Cai, BZ; Yuan, JY; Miyamura, Y; Saito, W; Nishizawa, SI

JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 3 )   2024.3   （ ISSN:0021-4922 eISSN:1347-4065 ）

A Future Outlook of Power Devices From the Viewpoint of Power Electronics Trends Reviewed International journal

@Wataru Saito

IEEE Transactions on Electron Devices   71 ( 3 )   1356 - 1364   2024.3

IGBT ターンオフスイッチングにおけるサージ電圧解析 Reviewed

#藤本 侑里, @西澤 伸一, @齋藤 渉

電気学会論文誌C（電子・情報・システム部門誌）   144 ( 3 )   198 - 203   2024.3

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping Reviewed International journal

Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa

IEEE Open Journal of Power Electronics   5   392 - 401   2024.2

Turn-off switching voltage surge analysis with dependence on IGBT cell design Reviewed International journal

#Yuri Fujimoto, @Shin-ichi Nishizawa and @Wataru Saito

Japanese Journal of Applied Physics   63 ( 2 )   02SP36   2024.2

Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors Reviewed International journal

Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, @Wataru Saito and Toshiro Hiramoto

Japanese Journal of Applied Physics   63 ( 2 )   02SP57   2024.2

Overvoltage Failure Process of Cascode GaN Field Effect Transistors Reviewed International journal

@Wataru Saito, @Shin-ichi Nishizawa

Physica Status Solidi a applications and materials science   221   2300791   2024.1

Device Design Direction of CSTBT for Low Loss and EMI Noise Reviewed International journal

Koichi Nishi; Kazuya Konishi; Toshiya Tadakuma; Akihiko Furukawa; @Wataru Saito

IEEE Transactions on Electron Devices   70 ( 12 )   6144 - 6150   2023.12

Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control Reviewed International journal

#Thatree Mamee, #Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Power Electronic Devices and Components   6   2023.10

Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker Reviewed International journal

Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa

Microelectronics Reliability   150   115119   2023.10

The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control Reviewed International journal

#Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Power Electronic Devices and Components   6   2023.10

Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device Reviewed International journal

Taro Takamori, Keiji Wada, Norman Boettcher, Tobias Erlbacher, @Wataru Saito, @Shin-ichi Nishizawa

IEEE Transactions on Industry Applications   59 ( 5 )   6427 - 6435   2023.9

Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module Reviewed International journal

#Thatree Mamee, #Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Microelectronics Reliability   147 ( 11 )   115067   2023.8

A simple sensor device for power cycle degradation sensing Reviewed International journal

#Tatsuta Tsukamoto, @Shin-ichi Nishizawa, @Wataru Saito

Microelectronics Reliability   147 ( 11 )   115068   2023.8

Stability, Reliability, and Robustness of GaN Power Devices: A Review Reviewed International journal

Joseph Peter Kozak; Ruizhe Zhang; Matthew Porter; Qihao Song; Jingcun Liu; Bixuan Wang; Rudy Wang; @Wataru Saito; Yuhao Zhang

IEEE Transactions on Power Electronics   38 ( 7 )   8442 - 8471   2023.7

Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot Reviewed International journal

Kohei Horii; Hiroki Yano; Katsuhiro Hata; Ruizhi Wang; Kazuto Mikami; Kenji Hatori; Koji Tanaka; @Wataru Saito; Makoto Takamiya

IEEE Transactions on Power Electronics   38 ( 7 )   8075 - 8088   2023.7

Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress Reviewed International journal

@Wataru Saito, @Shin-Ichi Nishizawa

The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   84 - 87   2023.5

Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes Reviewed International journal

Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-Ichi Nishizawa

2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)   2023.5

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process Invited Reviewed International journal

#Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, @Wataru Saito, and @Shin-ichi Nishizawa

Abstract of 7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023   452 - 454   2023.3

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method Invited Reviewed International journal

@Wataru Saito

Japanese Journal of Applied Physics   62 ( SC )   SC0803-1 - SC0803-6   2023.1

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control Reviewed International journal

#Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-Ichi Nishizawa, @Wataru Saito

IEEE Access   11   6632 - 6640   2023.1

Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage Reviewed International journal

Joseph P. Kozak; Qihao Song; Ruizhe Zhang; Yunwei Ma; Jingcun Liu; Qiang Li; @Wataru Saito; Yuhao Zhang

IEEE Transactions on Power Electronics   38 ( 1 )   435 - 446   2023.1

Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules Reviewed International journal

Toshiaki Inuma; Katsuhiro Hata; Toru Sai; @Wataru Saito; Makoto Takamiya

Proceedings of IEEE 7th Southern Power Electronics Conference (SPEC)   2022.12

Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests Reviewed International journal

#Zaiqi Lou, @Wataru Saito, @Shin-ichi Nishizawa

Microelectronics Reliability   138   114737   2022.11

Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device Reviewed International journal

Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; @Wataru Saito; @Shin-Ichi Nishizawa

Proceedings of 2022 IEEE Energy Conversion Congress and Exposition (ECCE)   2022.10

Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor Reviewed International journal

@Wataru Saito; #Zaiqi Lou; @Shin-Ichi NIshizawa

IEEE Transactions on Electron Devices   69 ( 10 )   5671 - 5677   2022.10

Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition Reviewed International journal

@Wataru Saito; #Zaiqi Lou; @Shin-ichi Nishizawa

Proceedings of 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)   2022.9

Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V Reviewed International journal

Norman Boettcher; Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa; Tobias Erlbacher

Proceedings of 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)   2022.9

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET Reviewed International journal

@Wataru Saito, and @Shin-ichi Nishizawa

IEEE Journal of the Electron Devices Society   10   512 - 515   2022.6

Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs Reviewed International journal

Kohei Horii, Katsuhiro Hata, Ruizhi Wang, @Wataru Saito, and Makoto Takamiya

Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   293 - 296   2022.5

Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs Reviewed International journal

@Wataru Saito, and @Shin-ichi Nishizawa

Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   53 - 56   2022.5

Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device Reviewed International journal

Norman Boettcher, Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa and Tobias Erlbacher

Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   261 - 264   2022.5

Scaling Design Effects on Surface Buffer IGBT Characteristics Reviewed International journal

@Wataru Saito and @Shin-ichi Nishizawa

IEEE, Journal of Electron Device Society   10   23 - 28   2022.2

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices Invited Reviewed International journal

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Wataru Saito and @Shin-ichi Nishizawa

Japanese Journal of Applied Physics   61   SC0801-1 - SC0801-8   2022.2

Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to solid-state circuit breakers Invited Reviewed International journal

#Zaiqi Lou, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa

Microelectronics Reliability   126 ( 11 )   114270   2021.11

Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection Reviewed International journal

Mitsuhiko Sagara, Keiji Wada, @Shin-ichi Nishizawa, @Wataru Saito

Microelectronics Reliability   126 ( 11 )   114237   2021.11

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability Reviewed International journal

@Wataru Saito, @Shin-Ichi Nishizawa

IEEE Electron Device Letters   42 ( 6 )   907 - 910   2021.6

Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology Reviewed International journal

@Wataru Saito, @Shin-ichi Nishizawa

Proceedings of 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   271 - 274   2021.6

Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits Reviewed International journal

#Taichi Ogawa, @Wataru Saito, @Shin-Ichi Nishizawa

IEEE Journal of the Electron Devices Society   9   552 - 556   2021.5

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching Reviewed International journal

Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, @Wataru Saito, and Yuhao Zhang

IEEE Electron Device Letters   42 ( 4 )   505 - 508   2021.4

Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test Reviewed International journal

#Zaiqi Lou, @Wataru Saito, and @Shin-ichi Nishizawa

Japanese Journal of Applied Physics   60   SBBD18-1 - SBBD18-7   2021.3

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices Reviewed International journal

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-Ichi Nishizawa; @Wataru Saito

IEEE Transactions on Power Electronics   36 ( 3 )   3304 - 3311   2021.3

A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit Reviewed International journal

#Taichi Ogawa , @Wataru Saito and @Shin-ichi Nishizawa

Japanese Journal of Applied Physics   60   SBBD16-1 - SBBD16-5   2021.3

3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology Reviewed International journal

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, @W. Saito, @S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

International Electron Devices Meeting (IEDM) 2020   2020.12

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor Reviewed International journal

@Wataru Saito; @Shin-ichi Nishizawa

IEEE Electron Device Letters   41 ( 12 )   1814 - 1816   2020.12

Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode Reviewed International journal

Taro Takamori, Keiji Wada, @Wataru Saitob, @Shin-ichi Nishizawab

Microelectronics Reliability   114   2020.11

Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization Reviewed International journal

#Ryohei Sato; @Koichi Kakimoto; @Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   494 - 497   2020.9

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices Reviewed International journal

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-Ichi Nishizawa; @Wataru Saito

IEEE Transactions on Electron Devices   67 ( 9 )   3691 - 3697   2020.9

High Switching Controllability Trench Gate Design in Si-IGBTs Reviewed International journal

@Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   447 - 450   2020.9

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation Reviewed International journal

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-ichi Nishizawa; @Wataru Saito

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   470 - 473   2020.9

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance Reviewed International journal

@Wataru Saito, @Shin-Ichi Nishizawa

IEEE Transactions on Electron Devices   67 ( 8 )   3285 - 3290   2020.8

Surface Buffer IGBT for High Total Performance Reviewed International journal

@Wataru Saito, @Shin-Ichi Nishizawa

IEEE Transactions on Electron Devices   67 ( 8 )   3263 - 3269   2020.8

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness Reviewed International journal

#Taichi Ogawa, @Wataru Saito, and @Shin-Ichi Nishizawa

IEEE Electron Device Letters   41 ( 7 )   1063 - 1065   2020.7

Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off Reviewed International journal

@Wataru Saito, @Shin-ichi Nishizawa

IEEE Electron Device Letters   41 ( 7 )   1060 - 1062   2020.7

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Reviewed International journal

Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, @Wataru Saito, @Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

IEEE Transactions on Semiconductor Manufacturing   33 ( 2 )   159 - 165   2020.5

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation Reviewed International journal

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, @Wataru Saito

2020 IEEE Applied Power Electronics Conference and Exposition (APEC)   686 - 689   2020.3

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation Reviewed International journal

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, and @Wataru Saito

International Electron Devices Meeting (IEDM) 2019   266 - 269   2019.12

HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction Reviewed International journal

Yasuhiro Okada ; Takeshi Mizoguchi ; Yuta Tanimoto ; Hideyuki Kikuchihara ; Toshiyuki Naka ; Wataru Saito ; Mitiko Miura-Mattausch ; Hans J?ergen Mattausch

IEEE Transactions on Electron Devices   66 ( 1 )   106 - 115   2019.1

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs Reviewed International journal

Wataru Saito and Toshiyuki Naka

Elsevier Microelectronics Reliability   76-77   309 - 313   2017.11

Modeling of field-plate effect on gallium-nitride-based high electron mobility transistors for high-power applications Reviewed International journal

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans J?rgen Mattausch

IEICE Transactions on Electronics   E100.C ( 3 )   321 - 328   2017.3

UIS test of high-voltage GaN-HEMTs with p-type gate structure Reviewed International journal

W. Saito and T. Naka

Elsevier Microelectronics Reliability   64   552 - 555   2016.11

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors Reviewed International journal

Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, and Hiroshi Iwai

Japanese J. of Applied Physics   55   40306   2016.2

Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model Reviewed International journal

Japanese J. of Applied Physics   55   04EG03   2016.2

Destruction failure analysis and international reliability test standard for power devices Reviewed International journal

Takashi Setoya, , Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo

Elsevier Microelectronics Reliability   55   1932 - 1937   2015.11

Breakdown behaviour of high-voltage GaN-HEMTs Reviewed International journal

W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

Elsevier Microelectronics Reliability   55   1682 - 1686   2015.11

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning　spreading resistance microscopy (SSRM) for power device applications Reviewed International journal

55   1159 - 1163   2015.11

Reduction of contact resistance on AlGaN/GaN HEMT structures by introducing uneven AlGaN layersm Reviewed International journal

Yusuke Takei, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

Physica Status Solidi A   212 ( 5 )   1104 - 1109   2015.8

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures Reviewed International journal

Yusuke Takei, Mari Okamoto, Wataru Saito, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

Electro Chemical Society Transactions   61 ( 4 )   265 - 270   2014.10

Power device trends for high-power density operation of power electronics system Reviewed International journal

Wataru Saito

Japanese J. of Applied Physics   53   04EP02   2014.2

GaN-HEMTs for high-voltage switching applications Reviewed International journal

Wataru Saito

Electro Chemical Society Transactions   41 ( 8 )   43 - 49   2011.10

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs Reviewed International journal

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, and Masakazu Yamaguchi

IEEE Electron Device Letters   31 ( 7 )   659 - 661   2010.7

Effect of buffer layer structure on drain leakage current and current collapse phenomena in high-voltage GaN-HEMTs Reviewed International journal

Wataru Saito, Takao Noda, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi

IEEE Trans. Electron Devices   56 ( 7 )   1371 - 1376   2009.7

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT Reviewed International journal

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

IEEE Electron Device Letters   29 ( 1 )   8 - 10   2008.1

ON-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage Reviewed International journal

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

IEEE Electron Device Letters   28 ( 8 )   676 - 678   2007.8

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With optimized Field-Plate Structure Reviewed International journal

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

IEEE Trans. Electron Devices   54 ( 8 )   1825 - 1830   2007.8

Normally-off GaN-MISFET with well-controlled threshold voltage Reviewed International journal

Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura

Physical State Solid (a)   204 ( 6 )   2010 - 2013   2007.6

Demonstration of 13.56-MHz Class-E Amplifier Using a High- Voltage GaN Power-HEMT Reviewed International journal

Wataru Saito, Tomokazu Domon, Ichiro Omura, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda and Masakazu Yamaguchi

IEEE Electron Device Letters   27 ( 5 )   326 - 328   2006.5

Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications Reviewed International journal

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda and Ichiro Omura

IEEE Trans. Electron Devices   53 ( 2 )   356 - 362   2006.2

High Breakdown Voltage (>1000V) Semi-Superjunction MOSFETs Using 600-V Class Superjunction MOSFET Process Reviewed International journal

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura

IEEE Trans. Electron Devices   52 ( 10 )   2317 - 2322   2005.10

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current Reviewed International journal

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

Physical State Solid (c)   2 ( 7 )   2647 - 2650   2005.7

Influence of Surface Defect Charge at AlGaN-GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage Reviewed International journal

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

IEEE Trans. Electron Devices   52 ( 2 )   159 - 164   2005.2

Design Optimization of High Breakdown Voltage AlGaN-GaN Power HEMT on an Insulating Substrate for RonA-VB Tradeoff Characteristics Reviewed International journal

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

IEEE Trans. Electron Devices   52 ( 1 )   106 - 111   2005.1

High Breakdown Voltage Undoped AlGaN-GaN Power-HEMT on Sapphire Substrate and Its Demonstration for DC-DC Converter Application Reviewed International journal

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

IEEE Trans. Electron Devices   51 ( 11 )   1913 - 1917   2004.11

A Novel Low On-Resistance Schottky-Barrier Diode with p-Buried Floating Layer Structure Reviewed International journal

Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi

IEEE Trans. Electron Devices   51 ( 5 )   797 - 802   2004.5

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device Reviewed International journal

Wataru Saito, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi

Solid-State Electronics   48 ( 4 )   1555 - 1562   2004.4

Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications Reviewed International journal

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

Japanese Journal of Applied Physics   43 ( 4 )   2239 - 2242   2004.4

High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior Reviewed International journal

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi

IEEE Trans. Electron Devices   50 ( 12 )   2528 - 2531   2003.12

Semisuperjunction MOSFETs: New Design Concept for Lower On-Resistance and Softer Reverse-Recovery Body Diode Reviewed International journal

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura

IEEE Trans. Electron Devices   50 ( 8 )   1801 - 1806   2003.8

High Voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics Reviewed International journal

Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura and Kunio Tsuda

Physical State Solid (c)   0 ( 7 )   2347 - 2350   2003.7

パワー半導体の現状と将来展望 Invited

齋藤　渉

nano tech 2024 特別シンポジウム  2024.2  nano tech実行委員会

Overvoltage Failure Process of Cascode GaN FETs International conference

@Wataru Saito, and @Shin-ichi Nishizawa

14th International Conference on Nitride Semiconductors (ICNS)  2023.11 

パワーエレクトロニクス応用動向から見たパワーデバイスの将来展望 Invited

@齋藤　渉

電気学会　電子デバイス/半導体電力変換研究会  2023.10 

Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker International conference

T. Takamori, K. Wada, @W. Saito, @S. Nishizawa

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023.10 

Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module International conference

#T. Mamee, #Z. Lou, K. Hata, M. Takamiya, @S. Nishizawa, @W. Saito

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023.10 

A simple sensor device for power cycle degradation sensing International conference

#T. Tsukamoto, @S. Nishizawa, @W. Saito

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023.10 

Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design International conference

#Yuri Fujimoto, @Shin-ichi Nishizawa, @Wataru Saito

2023 International Conference on Solid State Devices and Materials (SSDM)  2023.9 

Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method International conference

Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, @Wataru Saito, Toshiro Hiramoto

2023 International Conference on Solid State Devices and Materials (SSDM)  2023.9 

Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation International conference

2023.9 

Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs International conference

#Hiroaki Kato, #Bozhou Cai, #Jiuyang Yuan, Yoshiji Miyamura, @Shin-ichi Nishizawa, @Wataru Saito

2023 International Conference on Solid State Devices and Materials (SSDM)  2023.9 

Avalanche breakdown behavior and robustness of SiC and GaN transistors Invited International conference

@Wataru Saito

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2023  2023.8 

Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress International conference

@Wataru Saito, @Shin-Ichi Nishizawa

The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2023.5 

Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes International conference

Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-Ichi Nishizawa

2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)  2023.5 

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process International conference

#Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, @Wataru Saito, and @Shin-ichi Nishizawa

7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023  2023.3 

Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules International conference

Toshiaki Inuma; Katsuhiro Hata; Toru Sai; @Wataru Saito; Makoto Takamiya

IEEE 7th Southern Power Electronics Conference (SPEC)  2022.12 

Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device International conference

Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; @Wataru Saito; @Shin-Ichi Nishizawa

2022 IEEE Energy Conversion Congress and Exposition (ECCE)  2022.10 

Application of A Parallel-Connected SiC MOSFETs to Solid-State Circuit Breakers Based on UIS Tests International conference

Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa

33rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2022.9 

Progress of Low-Voltage Si-Power MOSFETs Invited International conference

@Wataru Saito

2022 International Conference on Solid State Devices and Materials (SSDM)  2022.9 

Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition International conference

@Wataru Saito, #Zaiqi Lou and @Shin-ichi Nishizawa

IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe)  2022.9 

Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V International conference

Norman Boettcher; Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa; Tobias Erlbacher

24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)  2022.9 

Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs International conference

Kohei Horii, Katsuhiro Hata, Ruizhi Wang, @Wataru Saito, and Makoto Takamiya

34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022.5 

Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs International conference

@Wataru Saito and @Shin-ichi Nishizawa

34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022.5 

Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device International conference

Norman Boettcher, Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa and Tobias Erlbacher

34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022.5 

Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses International conference

Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, @Wataru Saito, Yuhao Zhang

International Reliability Physics Symposium 2022  2022.3 

GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery International conference

Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt Smith, @Wataru Saito, Yuhao Zhang

International Reliability Physics Symposium 2022  2022.3 

Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode As Avalanche Voltage Clamping International conference

Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-Ichi Nishizawa

The Applied Power Electronics Conference (APEC) 2022  2022.3 

Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers International conference

#Z. Lou, K. Wada, @W. Saito, @S.-I. Nishizawa

32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2021.10 

Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection International conference

M. Sagara, K. Wada, @S.-I. Nishizawa, @W. Saito

32nd EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2021.10 

Performance Comparison of Scaled IGBTs and CIGBTs Invited International conference

Sankara Narayanan Ekkanath Madathil, Peng Luo, @Wataru Saito, and @Shin-ichi Nishizawa

2021 International Conference on Solid State Devices and Materials  2021.9 

Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology International conference

@Wataru Saito, @Shin-ichi Nishizawa

33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2021.6 

3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology International conference

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, @W. Saito, @S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

International Electron Devices Meeting (IEDM) 2020  2020.12 

Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode International conference

Taro Takamori, Keiji Wada, @Wataru Saito and @Shin-ichi Nishizawa

31st EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2020.10 

A Design Direction of Low-Voltage Field Plate Power MOSFETs for FOM Limit International conference

#Taichi Ogawa, @Wataru Saito, @Shin-ichi Nishizawa

2020 International Conference on Solid State Devices and Materials (SSDM)  2020.9 

Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test International conference

#Zaiqi Lou, @Wataru Saito, @Shin-ichi Nishizawa

2020 International Conference on Solid State Devices and Materials (SSDM)  2020.9 

High Switching Controllability Trench Gate Design in Si-IGBTs International conference

@Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation International conference

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-ichi Nishizawa; @Wataru Saito

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization International conference

#Ryohei Sato; @Koichi Kakimoto; @Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation International conference

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, @Wataru Saito

2020 IEEE Applied Power Electronics Conference and Exposition (APEC)  2020.3 

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation International conference

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, and @Wataru Saito

International Electron Devices Meeting (IEDM) 2019  2019.12 

Analysis of oscillatory phenomena in cathode designs for 1200 V diodes using an LCR circuit model in reverse recovery International conference

Kaori Fuse, Keiko Kawamura, Wataru Saito and Tomoko Matsudai

International Conference on Solid State Devices and Materials (SSDM)  2019.9 

3300V scaled IGBTs driven by 5V gate voltage International conference

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2019.5 

High accurate IGBT/IEGT compact modeling for prediction of power efficiency and EMI noise International conference

Takeshi Mizoguchi, Yoko Sakiyama, Naoto Tsukamoto and Wataru Saito

31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2019.5 

Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET International conference

Wataru Saito

30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2018.8 

Ultra Low On-Resistance SBD with P-Buried Floating Layer International conference

Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi

14th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2002.5 

600V Semi-superjunction MOSFET International conference

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura

15th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2003.4 

Design and Demonstration of High Breakdown Voltage GaN-HEMT Using Field Plate Structure for Power Electronics Applications International conference

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

International Conference on Solid State Devices and Materials (SSDM)  2003.9 

600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter International conference

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

2003 International Electron Device Meeting (IEDM)  2003.12 

A 20mΩcm2 600V-class Superjunction MOSFET International conference

2004.5 

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current International conference

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

International Workshop on Nitride Semiconductors (IWN) 2004  2004.7 

High Voltage AlGaN/GaN Power HEMT for Power Electronics Applications Invited International conference

Ichiro Omura, Wataru Saito and Kunio Tsuda

206th Electro Chemical Society meeting (ECS)  2004.10 

Demonstration of High Output Power Density (30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver International conference

Masanori Tsukuda, Ichiro Omura, Tomokazu Domon, Wataru Saito and Tsuneo Ogura

7th International Power Engineering Conference (IPEC)  2005.4 

Over 1000V Semi-Superjunction MOSFET with Ultra-Low On-Resistance blow the Si-Limit International conference

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura

17th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2005.5 

380V/1.9A GaN Power-HEMT: Current Collapse Phenomena under High Applied Voltage and Demonstration of 27.1MHz Class-E Amplifier International conference

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura and Masakazu Yamaguchi

2005 International Electron Device Meeting (IEDM)  2005.12 

Demonstration of High Output Power Density (50W/cc) Converter using 600V SJ-MOSFET and SiC-SBD International conference

Masanori Tsukuda, Ichiro Omura, Wataru Saito and Tomokazu Domon

International Conference on Integrated Power Electronics Systems (CIPS)  2006.6 

A 15.5mΩcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing International conference

2006.6 

Normally-off GaN-MISFET with well-controlled threshold voltage International conference

Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura

International Workshop on Nitride Semiconductors (IWN) 2006  2006.10 

High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT Invited International conference

Wataru Saito, Ichiro Omura, Tomokazu Domon and Kunio Tsuda

2006 Compound Semiconductor IC Symposium  2006.11 

High power density converter using SiC-SBD Invited International conference

Ichiro Omura, Masanori. Tsukuda, Wataru Saito and Tomokazu Domon

4th Power Conversion Conference (PCC)  2007.4 

Design concept of n-buffer layer (n-Bottom Assist Layer) for 600V-class Semi-Super Junction MOSFET International conference

Syotaro Ono, Wataru Saito, Masakatsu Takashita, Shoichiro Kurushima, Ken'ichi Tokano and Masakazu Yamaguchi

19th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2007.5 

High Voltage GaN-HEMTs for Power Electronics Applications and Those Current Collapse Phenomena under High Applied Voltage Invited International conference

Wataru Saito, Ichiro Omura and Kunio Tsuda

Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2007  2007.6 

Gallium Nitride power HEMT for high switching frequency power electronics Invited International conference

Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda

International Workshop on Physics of Semiconductor Devices (IWPSD) 2007  2007.12 

Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation International conference

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi

2007 International Electron Device Meeting (IEDM)  2007.12 

The optimal profile desing for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method International conference

Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano and Masakazu Yamaguchi

20th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2008.5 

Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications International conference

Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito

Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2008  2008.6 

Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT International conference

Wataru Saito, Tomokazu Domon, Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Kunio Tsuda and Masakazu Yamaguchi

39th Power Electronics Specialists Conference (PESC)  2008.6 

Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology International conference

Syotaro Ono, Li Zhang, Hiroshi Ohta, Miho Watanabe, Wataru Saito, Shigo Sato, Hiroyuki Sugaya and Masakazu Yamaguchi

21st International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2009.5 

Influence of Electric Field upon Current Collapse Phenomena and Reliability in High Voltage GaN-HEMTs International conference

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito,Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno

22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2010.6 

Reliability of GaN-HEMTs for high-voltage switching applications Invited International conference

Wataru Saito

2011 International Reliability Physics Symposium (IRPS)  2011.4 

A turn-off switching test of high voltage GaN-HEMTs International conference

Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno and Toru Sugiyama

9th Topical Workshop on Heterostructure Microelectronics (TWHM)  2011.8 

Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs International conference

Wataru Saito, Satoshi Aida, Shigeo Koduki and Masaru Izumisawa

23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2011.5 

“Improvement of gate controllability for new generation superjunction MOSFETs: DTMOS-III series International conference

2011.5 

DTMOS-IV: RDS(ON) innovation by deep trench filling superjunction technology International conference

Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera and Georges Tchouangue

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2012  2012.5 

Switching controllability of high voltage GaN-HEMTs and the Cascode connection International conference

Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Toshiyuki Naka and Toru Sugiyama

24th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2012.6 

Comparison of theoretical limits between superjunction and field plate structures International conference

Wataru Saito

25th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2013.5 

Requirements to GaN-HEMT from high-power density operation of power electronics system International conference

Wataru Saito

10th Topical Workshop on Heterostructure Microelectronics (TWHM)  2013.8 

Power Device Trends for High- Power density operation of power electronics system International conference

Wataru Saito

International Conference on Solid State Devices and Materials (SSDM) 2013  2013.9 

An Ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes International conference

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai and W. Saito

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)  2013.11 

Influence of carrier lifetime control process in superjunction MOSFET characteristics International conference

Wataru Saito, Shotaro Ono and Hiroaki Yamashita

26th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2014.6 

Backside field plate effect on suppression of current collapse phenomena in high-voltage GaN-HEMTs International conference

Wataru Saito, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno

International Workshop on Nitride Semiconductors (IWN) 2014  2014.8 

Low-resistive contact formation on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers International conference

Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi H. Iwai

International Workshop on Nitride Semiconductors (IWN) 2014  2014.8 

Dependence of Ti/C ratio on ohmic contact with TiC electrode for AlGaN/GaN structure International conference

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, and H. Iwai and W. Saito

The 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)  2014.11 

Theoretical loss analysis of power converters with 1200 V class Si-IGBT and SiC-MOSFET International conference

Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Wataru Saito

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2015  2015.5 

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET International conference

Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015.5 

Theoretical limits of superjunction considering with charge imbalance margin International conference

Wataru Saito

27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015.5 

Temperature dependence of single-event burnout for super junction MOSFET International conference

Shunsuke Katoh, Eiji Shimada, Takayuki Yoshihira, Akihiro Oyama, Syotaro Ono, Hideyuki Ura, Gentaro Ookura, Wataru Saito, Yusuke Kawaguchi

27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015.5 

TCAD simulation of high voltage GaN-HEMTs International conference

Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi

11th Topical Workshop on Heterostructure Microelectronics (TWHM)  2015.8 

Analysis of GaN-HEMT switching characteristics for high-power applications International conference

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch and Hans J?rgen Mattausch

International Conference on Solid State Devices and Materials (SSDM) 2015  2015.9 

Investigation of breakdown characteristics in high-voltage GaN-HEMTs International conference

Takeshi Suwa, Wataru Saito, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi

International Conference on Solid State Devices and Materials (SSDM) 2015  2015.9 

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning　spreading resistance microscopy (SSRM) for power device applications International conference

2015.10 

Breakdown behaviour of high-voltage GaN-HEMTs International conference

W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2015.10 

Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition International conference

K. Endo, S. Nagamine, W. Saito, T. Matsudai, T. Ogura, T. Setoya, K. Nakamae

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016.6 

Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions International conference

T. Mizoguchi, T. Naka, Y. Tanimoto, Y. Okada, W. Saito, M. Miura-Mattausch and H. J. Mattausch

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016.6 

UIS withstanding capability and mechanism of high voltage GaN-HEMTs International conference

T. Naka and W. Saito

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016.6 

UIS test of high-voltage GaN-HEMTs with p-type gate structure International conference

W. Saito and T. Naka

27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2016.9 

Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT International conference

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

2016 International Electron Device Meeting (IEDM)  2016.12 

Process design of superjunction MOSFETs for high drain current capability and low on-resistance International conference

Wataru Saito

29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2017.5 

Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs International conference

Toshiyuki Naka and Wataru Saito

29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2017.5 

Influence of Gate Characteristics upon UIS Withstanding Capability in High Voltage GaN-HEMTs International conference

Wataru Saito and Toshiyuki Naka

12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)  2017.8 

Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle Invited International conference

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

International Conference on Solid State Devices and Materials (SSDM) 2017  2017.9 

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs International conference

Wataru Saito and Toshiyuki Naka

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux (France)  2017.9 

Enhancement of accumulation-mode operation in gate-connected superjunction MOSFET International conference

Wataru Saito

14th International Seminar on Power Semiconductors (ISPS)  2018.5 

Low noise superjunction MOSFET with integrated snubber structure International conference

Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Masaru Izumisawa and Wataru Saito

30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2018.5 

Screening of academic papers

Role(s)： Peer review

2023

SSDM Award評価委員 International contribution

2022.9

Technical Program Committee International contribution

IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)  （ Warwick UnitedKingdom ） 2022.9

Technical Program Committee International contribution

9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)  （ Nagoya Japan ） 2022.9

Technical Program Committee International contribution

14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022  （ Hiroshima Japan ） 2022.8 - 2022.9

文部科学省委託「令和4年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

Role(s)： Review, evaluation

2022.6 - 2023.3

Technical Program Committee International contribution

6th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2022  （ Oita Japan ） 2022.3

Screening of academic papers

Role(s)： Peer review

2022

Technical Program Committee International contribution

IEEE International Electron Devices Meeting (IEDM)  （ San Francisco UnitedStatesofAmerica ） 2021.12

Technical Program Committee International contribution

5th IEEE International Future Energy Electronics Conference  （ Online Taiwan ） 2021.11

文部科学省委託「令和3年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

Role(s)： Review, evaluation

2021.10 - 2022.3

International Program Committee International contribution

15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS (ISPS) 2021  （ Prague CzechRepublic ） 2021.8

Organizing Committee International contribution

33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Online Japan ） 2021.5 - 2021.6

Screening of academic papers

Role(s)： Peer review

2021

Technical Program Committee International contribution

IEEE International Electron Devices Meeting (IEDM)  （ Online UnitedStatesofAmerica ） 2020.12

Technical Program Committee International contribution

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2020  （ Kyoto Japan ） 2020.9

Technical Program Committee International contribution

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Online Austria ） 2020.9

Chair International contribution

ECPE Workshop Power Semiconductor Robustness - What Kills Power Devices?  （ Munich Germany ） 2020.1

Screening of academic papers

Role(s)： Peer review

2020

IEEE Transactions on Electron Devices International contribution

2019.12 - 2028.12

Technical Program Committee International contribution

31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Shanghai China ） 2019.5

Screening of academic papers

Role(s)： Peer review

2019

Technical Program Committee International contribution

30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Chicago UnitedStatesofAmerica ） 2018.5

Steering Committee, Technical Program Committee International contribution

29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Sapporo Japan ） 2017.5 - 2017.6

Technical Program Committee International contribution

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Prague CzechRepublic ） 2016.6

Steering Committee International contribution

25th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Kanazawa Japan ） 2013.5

東芝インフラシステムズ学術奨励制度

2023

東芝デバイス＆ストレージ学術奨励制度

2023

東芝インフラシステムズ学術奨励制度

2022

東芝デバイス＆ストレージ学術奨励制度

2022

省エネエレクトロニクスの製造基盤強化に向けた技術開発事業「大口径インテリジェント・シリコンパワー半導体の開発」

2021.6 - 2026.2

国立研究開発法人新エネルギー・産業技術総合開発機構（NEDO） 

低炭素社会実現に向けた高耐量・高信頼なSiCパワーデバイスを用いた直流遮断器

2021 - 2022

日本学術振興会  二国間交流

東芝デバイス＆ストレージ学術奨励制度

2021

東芝インフラシステムズ学術奨励制度

2021

AIゲートドライブの最適駆動変数の決定方法に関する理論構築と実証

2020.12 - 2022.9

共同研究

パワーモジュール劣化モニタリングFS研究

2020.10 - 2022.8

共同研究

新世代Si-IGBT と応用基本技術の研究開発

2019.4 - 2020.3

高効率電気自動車に向けた理論限界を超える新規低耐圧パワーＭＯＳＦＥＴの構造と制御

Grant number：1 9 K 2 3 5 1 8  2019 - 2020

日本学術振興会  科学研究費助成事業  研究活動スタート支援

異分野特別演習

2023.4 - 2023.9   First semester

パワーデバイス工学基礎

2022.6 - 2022.8   Summer quarter

総合理工学修士実験

2022.4 - 2023.3   Full year

総合理工学修士演習

2022.4 - 2023.3   Full year

パワーデバイス工学演習

2021.10 - 2022.3   Second semester

パワーデバイス工学基礎

2021.6 - 2021.8   Summer quarter

パワーデバイス工学実験

2021.4 - 2022.3   Full year

パワーデバイス工学

2020.10 - 2021.3   Second semester

パワーデバイス工学演習

2020.10 - 2021.3   Second semester

パワーデバイス工学実験

2020.4 - 2021.3   Full year

パワーデバイス工学基礎

2024.6 - 2024.8   Summer quarter

2019  東京大学生産技術研究所　リサーチフェロー  Domestic/International Classification:Japan