Updated on 2024/10/02

Information

 

写真a

 
SAITO WATARU
 
Organization
Research Institute for Applied Mechanics Division of Renewable Energy Dynamics Professor
Interdisciplinary Graduate School of Engineering Sciences Department of Interdisciplinary Engineering Sciences(Joint Appointment)
Title
Professor
Contact information
メールアドレス
Tel
0925837761
Profile
This section studies to develop power semiconductor devices for high-efficient conversion of electric power generated by renewable energy and high functional power modules connecting to the energy network.

Degree

  • Dr. Eng. ( 1999.3   Tokyo Institute of Technology )

Research History

  • 1999.04-2019.03 東芝

    1999.04-2019.03 東芝

Research Interests・Research Keywords

  • Research theme:-power semiconductor devices for high-efficient conversion -high functional control technology of power semiconductor devices -power modules connecting to the energy network

    Keyword:power semiconductor devices, electric power conversion, energy network

    Research period: 2019.4

Awards

  • 第24回優秀技術活動賞 技術報告賞

    2021.4   電気学会  

  • PESC 2008 Conference Prize Paper Award

    2008.6  

Papers

  • Effect of solder junction void variation in power semiconductor package on power cycle lifetime Reviewed International journal

    Hiroshi Onodera, Nobuyuki Shishido, Daisuke Asari, Hiroshi Isono, Wataru Saito

    Microelectronics Reliability   161   115471   2024.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier  

    DOI: 10.1016/j.microrel.2024.115471

  • A Model of Wafer Warpage for Trench Field-Plate Power MOSFETs Reviewed International journal

    Hiroaki Kato, Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Shin-ichi Nishizawa, Wataru Saito

    Physics Status Solidi (a) applications and materials science   2400264-1 - 2400264-7   2024.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    DOI: 10.1002/pssa.202400264

  • Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN) Reviewed International journal

    Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-ichi Nishizawa, and Wataru Saito

    IEEE Access   12   96936 - 96945   2024.7

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE  

    DOI: 10.1109/ACCESS.2024.3427643

  • Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress Failure Reviewed International journal

    Wataru Saito, and Shin-ichi Nishizawa

    IEEE Transactions on Electron Devices   71 ( 6 )   3590 - 3595   2024.6

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE  

    DOI: 10.1109/TED.2024.3388383

    Repository Public URL: https://hdl.handle.net/2324/7218251

  • Power-cycling degradation monitoring of an IGBT module with VCE(sat) measurement in continuous operation of a chopper circuit Reviewed International journal

    Kazunori Hasegawa, Kanta Hara, Nobuyuki Shishido, @Satoshi Nakano, @Wataru Saito, Tamotsu Ninomiya

    Power Electronic Devices and Components   7   100061   2024.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.pedc.2024.100061

  • Mechanism of gate voltage spike under digital gate control at IGBT switching operations Reviewed International journal

    #Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

    Power Electronic Devices and Components   7   2024.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.pedc.2023.100054

  • Study on stress in trench structures during silicon IGBTs process-oxidation

    Cai, BZ; Yuan, JY; Miyamura, Y; Saito, W; Nishizawa, SI

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 3 )   2024.3   ISSN:0021-4922 eISSN:1347-4065

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    Publisher:Japanese Journal of Applied Physics  

    In silicon insulated gate bipolar transistors, the trench gate structure is used to achieve smaller cell size and lower ON resistance, and thereby reduces energy loss. However, the thermal process can cause large stress near the trench and sometimes degrades device performance. This study proposed a three-dimensional model of a silicon chip with trench structures to analyze the stress distribution induced by thermal process around the trench, the scribe line, and the bottom surface of the chip. The calculated stress is in good agreement with measurement by Raman spectroscopy. The mesa top has much higher stress than the scribe line and the bottom surface. The stress depends on oxide thickness and the size scaling may reduce the stress.

    DOI: 10.35848/1347-4065/ad1e00

    Web of Science

    Scopus

  • A Future Outlook of Power Devices From the Viewpoint of Power Electronics Trends Reviewed International journal

    @Wataru Saito

    IEEE Transactions on Electron Devices   71 ( 3 )   1356 - 1364   2024.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2023.3332611

  • IGBT ターンオフスイッチングにおけるサージ電圧解析 Reviewed

    #藤本 侑里, @西澤 伸一, @齋藤 渉

    電気学会論文誌C(電子・情報・システム部門誌)   144 ( 3 )   198 - 203   2024.3

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1541/ieejeiss.144.198

  • Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping Reviewed International journal

    Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa

    IEEE Open Journal of Power Electronics   5   392 - 401   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/OJPEL.2024.3365830

  • Turn-off switching voltage surge analysis with dependence on IGBT cell design Reviewed International journal

    #Yuri Fujimoto, @Shin-ichi Nishizawa and @Wataru Saito

    Japanese Journal of Applied Physics   63 ( 2 )   02SP36   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ad106d

  • Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors Reviewed International journal

    Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, @Wataru Saito and Toshiro Hiramoto

    Japanese Journal of Applied Physics   63 ( 2 )   02SP57   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ad106d

  • Overvoltage Failure Process of Cascode GaN Field Effect Transistors Reviewed International journal

    @Wataru Saito, @Shin-ichi Nishizawa

    Physica Status Solidi a applications and materials science   221   2300791   2024.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.202300791

  • Device Design Direction of CSTBT for Low Loss and EMI Noise Reviewed International journal

    Koichi Nishi; Kazuya Konishi; Toshiya Tadakuma; Akihiko Furukawa; @Wataru Saito

    IEEE Transactions on Electron Devices   70 ( 12 )   6144 - 6150   2023.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2023.3326794

  • Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control Reviewed International journal

    #Thatree Mamee, #Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

    Power Electronic Devices and Components   6   2023.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.pedc.2023.100052

  • Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker Reviewed International journal

    Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa

    Microelectronics Reliability   150   115119   2023.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2023.115119

  • The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control Reviewed International journal

    #Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

    Power Electronic Devices and Components   6   2023.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.pedc.2023.100047

  • Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device Reviewed International journal

    Taro Takamori, Keiji Wada, Norman Boettcher, Tobias Erlbacher, @Wataru Saito, @Shin-ichi Nishizawa

    IEEE Transactions on Industry Applications   59 ( 5 )   6427 - 6435   2023.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TIA.2023.3288856

  • Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module Reviewed International journal

    #Thatree Mamee, #Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

    Microelectronics Reliability   147 ( 11 )   115067   2023.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2023.115067

  • A simple sensor device for power cycle degradation sensing Reviewed International journal

    #Tatsuta Tsukamoto, @Shin-ichi Nishizawa, @Wataru Saito

    Microelectronics Reliability   147 ( 11 )   115068   2023.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2023.115068

  • Stability, Reliability, and Robustness of GaN Power Devices: A Review Reviewed International journal

    Joseph Peter Kozak; Ruizhe Zhang; Matthew Porter; Qihao Song; Jingcun Liu; Bixuan Wang; Rudy Wang; @Wataru Saito; Yuhao Zhang

    IEEE Transactions on Power Electronics   38 ( 7 )   8442 - 8471   2023.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TPEL.2023.3266365

  • Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot Reviewed International journal

    Kohei Horii; Hiroki Yano; Katsuhiro Hata; Ruizhi Wang; Kazuto Mikami; Kenji Hatori; Koji Tanaka; @Wataru Saito; Makoto Takamiya

    IEEE Transactions on Power Electronics   38 ( 7 )   8075 - 8088   2023.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TPEL.2023.3259521

  • Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress Reviewed International journal

    @Wataru Saito, @Shin-Ichi Nishizawa

    The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   84 - 87   2023.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/ISPSD57135.2023.10147411

  • Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes Reviewed International journal

    Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-Ichi Nishizawa

    2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)   2023.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.23919/ICPE2023-ECCEAsia54778.2023.10213947

  • The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process Invited Reviewed International journal

    #Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, @Wataru Saito, and @Shin-ichi Nishizawa

    Abstract of 7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023   452 - 454   2023.3

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method Invited Reviewed International journal

    @Wataru Saito

    Japanese Journal of Applied Physics   62 ( SC )   SC0803-1 - SC0803-6   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acac3d

  • IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control Reviewed International journal

    #Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-Ichi Nishizawa, @Wataru Saito

    IEEE Access   11   6632 - 6640   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/ACCESS.2023.3237266

  • Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage Reviewed International journal

    Joseph P. Kozak; Qihao Song; Ruizhe Zhang; Yunwei Ma; Jingcun Liu; Qiang Li; @Wataru Saito; Yuhao Zhang

    IEEE Transactions on Power Electronics   38 ( 1 )   435 - 446   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TPEL.2022.3198838

  • Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules Reviewed International journal

    Toshiaki Inuma; Katsuhiro Hata; Toru Sai; @Wataru Saito; Makoto Takamiya

    Proceedings of IEEE 7th Southern Power Electronics Conference (SPEC)   2022.12

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/SPEC55080.2022.10058383

  • Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests Reviewed International journal

    #Zaiqi Lou, @Wataru Saito, @Shin-ichi Nishizawa

    Microelectronics Reliability   138   114737   2022.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2022.114737

  • Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device Reviewed International journal

    Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; @Wataru Saito; @Shin-Ichi Nishizawa

    Proceedings of 2022 IEEE Energy Conversion Congress and Exposition (ECCE)   2022.10

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/ECCE50734.2022.9948054

  • Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor Reviewed International journal

    @Wataru Saito; #Zaiqi Lou; @Shin-Ichi NIshizawa

    IEEE Transactions on Electron Devices   69 ( 10 )   5671 - 5677   2022.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2022.3200637

  • Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition Reviewed International journal

    @Wataru Saito; #Zaiqi Lou; @Shin-ichi Nishizawa

    Proceedings of 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)   2022.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/WiPDAEurope55971.2022.9936060

  • Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V Reviewed International journal

    Norman Boettcher; Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa; Tobias Erlbacher

    Proceedings of 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)   2022.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET Reviewed International journal

    @Wataru Saito, and @Shin-ichi Nishizawa

    IEEE Journal of the Electron Devices Society   10   512 - 515   2022.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/JEDS.2022.3187151

  • Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs Reviewed International journal

    Kohei Horii, Katsuhiro Hata, Ruizhi Wang, @Wataru Saito, and Makoto Takamiya

    Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   293 - 296   2022.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs Reviewed International journal

    @Wataru Saito, and @Shin-ichi Nishizawa

    Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   53 - 56   2022.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device Reviewed International journal

    Norman Boettcher, Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa and Tobias Erlbacher

    Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   261 - 264   2022.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Scaling Design Effects on Surface Buffer IGBT Characteristics Reviewed International journal

    @Wataru Saito and @Shin-ichi Nishizawa

    IEEE, Journal of Electron Device Society   10   23 - 28   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/JEDS.2021.3129162

  • Investigation of turn-on performance in 1.2 kV MOS-bipolar devices Invited Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, @Wataru Saito and @Shin-ichi Nishizawa

    Japanese Journal of Applied Physics   61   SC0801-1 - SC0801-8   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac40aa

  • Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to solid-state circuit breakers Invited Reviewed International journal

    #Zaiqi Lou, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa

    Microelectronics Reliability   126 ( 11 )   114270   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.microrel.2021.114270

  • Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection Reviewed International journal

    Mitsuhiko Sagara, Keiji Wada, @Shin-ichi Nishizawa, @Wataru Saito

    Microelectronics Reliability   126 ( 11 )   114237   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.microrel.2021.114237

  • Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability Reviewed International journal

    @Wataru Saito, @Shin-Ichi Nishizawa

    IEEE Electron Device Letters   42 ( 6 )   907 - 910   2021.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2021.3075657

  • Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology Reviewed International journal

    @Wataru Saito, @Shin-ichi Nishizawa

    Proceedings of 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   271 - 274   2021.6

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.23919/ISPSD50666.2021.9452240

  • Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits Reviewed International journal

    #Taichi Ogawa, @Wataru Saito, @Shin-Ichi Nishizawa

    IEEE Journal of the Electron Devices Society   9   552 - 556   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/JEDS.2021.3079396

  • True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching Reviewed International journal

    Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, @Wataru Saito, and Yuhao Zhang

    IEEE Electron Device Letters   42 ( 4 )   505 - 508   2021.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2021.3063360

  • Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test Reviewed International journal

    #Zaiqi Lou, @Wataru Saito, and @Shin-ichi Nishizawa

    Japanese Journal of Applied Physics   60   SBBD18-1 - SBBD18-7   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abebc1

  • Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices Reviewed International journal

    Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-Ichi Nishizawa; @Wataru Saito

    IEEE Transactions on Power Electronics   36 ( 3 )   3304 - 3311   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TPEL.2020.3014560

  • A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit Reviewed International journal

    #Taichi Ogawa , @Wataru Saito and @Shin-ichi Nishizawa

    Japanese Journal of Applied Physics   60   SBBD16-1 - SBBD16-5   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abe801

  • 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology Reviewed International journal

    T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, @W. Saito, @S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

    International Electron Devices Meeting (IEDM) 2020   2020.12

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor Reviewed International journal

    @Wataru Saito; @Shin-ichi Nishizawa

    IEEE Electron Device Letters   41 ( 12 )   1814 - 1816   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/led.2020.3034898

  • Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode Reviewed International journal

    Taro Takamori, Keiji Wada, @Wataru Saitob, @Shin-ichi Nishizawab

    Microelectronics Reliability   114   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2020.113

  • Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization Reviewed International journal

    #Ryohei Sato; @Koichi Kakimoto; @Wataru Saito; @Shin-ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   494 - 497   2020.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/ISPSD46842.2020.9170035

  • Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices Reviewed International journal

    Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-Ichi Nishizawa; @Wataru Saito

    IEEE Transactions on Electron Devices   67 ( 9 )   3691 - 3697   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2020.3007594

  • High Switching Controllability Trench Gate Design in Si-IGBTs Reviewed International journal

    @Wataru Saito; @Shin-ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   447 - 450   2020.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/ISPSD46842.2020.9170118

  • Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation Reviewed International journal

    Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-ichi Nishizawa; @Wataru Saito

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   470 - 473   2020.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/ISPSD46842.2020.9170129

  • Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance Reviewed International journal

    @Wataru Saito, @Shin-Ichi Nishizawa

    IEEE Transactions on Electron Devices   67 ( 8 )   3285 - 3290   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2020.3002510

  • Surface Buffer IGBT for High Total Performance Reviewed International journal

    @Wataru Saito, @Shin-Ichi Nishizawa

    IEEE Transactions on Electron Devices   67 ( 8 )   3263 - 3269   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2020.2999874

  • On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness Reviewed International journal

    #Taichi Ogawa, @Wataru Saito, and @Shin-Ichi Nishizawa

    IEEE Electron Device Letters   41 ( 7 )   1063 - 1065   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2020.3000239

  • Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off Reviewed International journal

    @Wataru Saito, @Shin-ichi Nishizawa

    IEEE Electron Device Letters   41 ( 7 )   1060 - 1062   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2020.2991927

  • Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Reviewed International journal

    Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, @Wataru Saito, @Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

    IEEE Transactions on Semiconductor Manufacturing   33 ( 2 )   159 - 165   2020.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TSM.2020.2972369

  • High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, @Wataru Saito

    2020 IEEE Applied Power Electronics Conference and Exposition (APEC)   686 - 689   2020.3

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/APEC39645.2020.9124293

  • Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation Reviewed International journal

    Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, and @Wataru Saito

    International Electron Devices Meeting (IEDM) 2019   266 - 269   2019.12

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/IEDM19573.2019.8993596

  • HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction Reviewed International journal

    Yasuhiro Okada ; Takeshi Mizoguchi ; Yuta Tanimoto ; Hideyuki Kikuchihara ; Toshiyuki Naka ; Wataru Saito ; Mitiko Miura-Mattausch ; Hans J?ergen Mattausch

    IEEE Transactions on Electron Devices   66 ( 1 )   106 - 115   2019.1

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  • Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs Reviewed International journal

    Wataru Saito and Toshiyuki Naka

    Elsevier Microelectronics Reliability   76-77   309 - 313   2017.11

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  • Modeling of field-plate effect on gallium-nitride-based high electron mobility transistors for high-power applications Reviewed International journal

    Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans J?rgen Mattausch

    IEICE Transactions on Electronics   E100.C ( 3 )   321 - 328   2017.3

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    Language:English   Publishing type:Research paper (scientific journal)  

  • UIS test of high-voltage GaN-HEMTs with p-type gate structure Reviewed International journal

    W. Saito and T. Naka

    Elsevier Microelectronics Reliability   64   552 - 555   2016.11

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  • Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors Reviewed International journal

    Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, and Hiroshi Iwai

    Japanese J. of Applied Physics   55   40306   2016.2

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  • Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model Reviewed International journal

    Japanese J. of Applied Physics   55   04EG03   2016.2

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  • Destruction failure analysis and international reliability test standard for power devices Reviewed International journal

    Takashi Setoya, , Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo

    Elsevier Microelectronics Reliability   55   1932 - 1937   2015.11

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  • Breakdown behaviour of high-voltage GaN-HEMTs Reviewed International journal

    W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

    Elsevier Microelectronics Reliability   55   1682 - 1686   2015.11

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications Reviewed International journal

    55   1159 - 1163   2015.11

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  • Reduction of contact resistance on AlGaN/GaN HEMT structures by introducing uneven AlGaN layersm Reviewed International journal

    Yusuke Takei, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

    Physica Status Solidi A   212 ( 5 )   1104 - 1109   2015.8

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  • Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures Reviewed International journal

    Yusuke Takei, Mari Okamoto, Wataru Saito, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

    Electro Chemical Society Transactions   61 ( 4 )   265 - 270   2014.10

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  • Power device trends for high-power density operation of power electronics system Reviewed International journal

    Wataru Saito

    Japanese J. of Applied Physics   53   04EP02   2014.2

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  • GaN-HEMTs for high-voltage switching applications Reviewed International journal

    Wataru Saito

    Electro Chemical Society Transactions   41 ( 8 )   43 - 49   2011.10

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  • Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs Reviewed International journal

    Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, and Masakazu Yamaguchi

    IEEE Electron Device Letters   31 ( 7 )   659 - 661   2010.7

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  • Effect of buffer layer structure on drain leakage current and current collapse phenomena in high-voltage GaN-HEMTs Reviewed International journal

    Wataru Saito, Takao Noda, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi

    IEEE Trans. Electron Devices   56 ( 7 )   1371 - 1376   2009.7

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  • A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT Reviewed International journal

    Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

    IEEE Electron Device Letters   29 ( 1 )   8 - 10   2008.1

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  • ON-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage Reviewed International journal

    Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

    IEEE Electron Device Letters   28 ( 8 )   676 - 678   2007.8

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  • Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With optimized Field-Plate Structure Reviewed International journal

    Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

    IEEE Trans. Electron Devices   54 ( 8 )   1825 - 1830   2007.8

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  • Normally-off GaN-MISFET with well-controlled threshold voltage Reviewed International journal

    Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura

    Physical State Solid (a)   204 ( 6 )   2010 - 2013   2007.6

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  • Demonstration of 13.56-MHz Class-E Amplifier Using a High- Voltage GaN Power-HEMT Reviewed International journal

    Wataru Saito, Tomokazu Domon, Ichiro Omura, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda and Masakazu Yamaguchi

    IEEE Electron Device Letters   27 ( 5 )   326 - 328   2006.5

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  • Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications Reviewed International journal

    Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda and Ichiro Omura

    IEEE Trans. Electron Devices   53 ( 2 )   356 - 362   2006.2

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  • High Breakdown Voltage (>1000V) Semi-Superjunction MOSFETs Using 600-V Class Superjunction MOSFET Process Reviewed International journal

    Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura

    IEEE Trans. Electron Devices   52 ( 10 )   2317 - 2322   2005.10

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  • High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current Reviewed International journal

    Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

    Physical State Solid (c)   2 ( 7 )   2647 - 2650   2005.7

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  • Influence of Surface Defect Charge at AlGaN-GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage Reviewed International journal

    Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

    IEEE Trans. Electron Devices   52 ( 2 )   159 - 164   2005.2

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  • Design Optimization of High Breakdown Voltage AlGaN-GaN Power HEMT on an Insulating Substrate for RonA-VB Tradeoff Characteristics Reviewed International journal

    Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

    IEEE Trans. Electron Devices   52 ( 1 )   106 - 111   2005.1

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  • High Breakdown Voltage Undoped AlGaN-GaN Power-HEMT on Sapphire Substrate and Its Demonstration for DC-DC Converter Application Reviewed International journal

    Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

    IEEE Trans. Electron Devices   51 ( 11 )   1913 - 1917   2004.11

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  • A Novel Low On-Resistance Schottky-Barrier Diode with p-Buried Floating Layer Structure Reviewed International journal

    Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi

    IEEE Trans. Electron Devices   51 ( 5 )   797 - 802   2004.5

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  • Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device Reviewed International journal

    Wataru Saito, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi

    Solid-State Electronics   48 ( 4 )   1555 - 1562   2004.4

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  • Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications Reviewed International journal

    Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

    Japanese Journal of Applied Physics   43 ( 4 )   2239 - 2242   2004.4

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  • High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior Reviewed International journal

    Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi

    IEEE Trans. Electron Devices   50 ( 12 )   2528 - 2531   2003.12

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  • Semisuperjunction MOSFETs: New Design Concept for Lower On-Resistance and Softer Reverse-Recovery Body Diode Reviewed International journal

    Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura

    IEEE Trans. Electron Devices   50 ( 8 )   1801 - 1806   2003.8

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  • High Voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics Reviewed International journal

    Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura and Kunio Tsuda

    Physical State Solid (c)   0 ( 7 )   2347 - 2350   2003.7

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▼display all

Books

  • 次世代パワー半導体デバイス・実装技術の基礎

    @齋藤 渉、田中 保宣、加地 徹、東脇 正高、竹内 大輔、山田 英明、寺地 徳之、徳田 紀夫、加藤 宙光、梅沢 仁、大曲 新矢、牧野 俊晴、松本 翼、川原田 洋、山口 浩( Role: Joint author)

    科学技術情報出版  2021.1 

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    Responsible for pages:ISBN978-4-904774-95-3、第1章 パワーデバイスの基礎(p.3-69)   Language:Japanese   Book type:Scholarly book

  • パワーデバイス

    Gourab Majumdar、井上 馨、大村 一郎、木本 恒暢、小杉 敏彦、齋藤 渉、佐藤 克己、佐藤 之彦、四戸 孝、常信 和清、田上 知紀、田中 愼一、津田 邦男、服部 亮、牧本 俊樹、松永 高治、松本 聡( Role: Joint author)

    丸善株式会社  2011.1 

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    Responsible for pages:第3.5節 パワーデバイスの新しい展開 pp. 116-130   Language:Japanese   Book type:Scholarly book

  • 電気工学ハンドブック(第7版)

    齋藤 渉( Role: Joint author8編 電子デバイス 4.2 パワーMOS)

    電気学会 

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Presentations

  • A Screening Test of GaN-HEMTs for Improvement of Breakdown Voltage Uniformity International conference

    Wataru Saito, Shin-Ichi Nishizawa

    35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Parma   Country:Italy  

  • Improvement of Sensitivity for Power Cycle Degradation by A New Device Structure International conference

    Koki Okame, Yuki Yamakita, Shin-Ichi Nishizawa, Wataru Saito

    35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Parma   Country:Italy  

  • シリコンパワーデバイスの技術動向 Invited

    齋藤 渉

    応用物理学会 第85回秋季学術講演会  2024.9  応用物理学会

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    Event date: 2024.9

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:新潟   Country:Japan  

  • GaN-HEMTの過電圧印加に対する挙動・破壊プロセス Invited

    齋藤 渉

    ワイドギャップ半導体学会 第17回研究会  2024.7  ワイドギャップ半導体学会

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    Event date: 2024.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京   Country:Japan  

  • Observation of Thermal-Resistance Increase of Degraded IGBT Modules by VCE(sat) Measurement in a Chopper Circuit International conference

    Kazunori Hasegawa, Hisaki Ueda, Kanta Hara, Nobuyuki Shishido, Satoshi Nakano, Wataru Saito, Tamotsu Ninomiya

    PCIM Europe 2024  2024.6 

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    Event date: 2024.6

    Language:English   Presentation type:Poster presentation  

    Venue:Nuremberg   Country:Germany  

    DOI: 10.30420/566262426

  • パワー半導体の現状と将来展望 Invited

    齋藤 渉

    nano tech 2024 特別シンポジウム  2024.2  nano tech実行委員会

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    Event date: 2024.1 - 2024.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京ビッグサイト   Country:Japan  

  • Overvoltage Failure Process of Cascode GaN FETs International conference

    @Wataru Saito, and @Shin-ichi Nishizawa

    14th International Conference on Nitride Semiconductors (ICNS)  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • パワーエレクトロニクス応用動向から見たパワーデバイスの将来展望 Invited

    @齋藤 渉

    電気学会 電子デバイス/半導体電力変換研究会  2023.10 

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    Event date: 2023.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:九州大学西新プラザ   Country:Japan  

  • Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker International conference

    T. Takamori, K. Wada, @W. Saito, @S. Nishizawa

    34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  • Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module International conference

    #T. Mamee, #Z. Lou, K. Hata, M. Takamiya, @S. Nishizawa, @W. Saito

    34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  • A simple sensor device for power cycle degradation sensing International conference

    #T. Tsukamoto, @S. Nishizawa, @W. Saito

    34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  • Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design International conference

    #Yuri Fujimoto, @Shin-ichi Nishizawa, @Wataru Saito

    2023 International Conference on Solid State Devices and Materials (SSDM)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method International conference

    Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, @Wataru Saito, Toshiro Hiramoto

    2023 International Conference on Solid State Devices and Materials (SSDM)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation International conference

    2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs International conference

    #Hiroaki Kato, #Bozhou Cai, #Jiuyang Yuan, Yoshiji Miyamura, @Shin-ichi Nishizawa, @Wataru Saito

    2023 International Conference on Solid State Devices and Materials (SSDM)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Avalanche breakdown behavior and robustness of SiC and GaN transistors Invited International conference

    @Wataru Saito

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2023  2023.8 

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    Event date: 2023.8

    Language:English   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Country:Taiwan, Province of China  

  • Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress International conference

    @Wataru Saito, @Shin-Ichi Nishizawa

    The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2023.5 

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    Event date: 2023.5 - 2023.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  • Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes International conference

    Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-Ichi Nishizawa

    2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process International conference

    #Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, @Wataru Saito, and @Shin-ichi Nishizawa

    7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023  2023.3 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules International conference

    Toshiaki Inuma; Katsuhiro Hata; Toru Sai; @Wataru Saito; Makoto Takamiya

    IEEE 7th Southern Power Electronics Conference (SPEC)  2022.12 

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    Event date: 2022.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Fiji  

  • Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device International conference

    Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; @Wataru Saito; @Shin-Ichi Nishizawa

    2022 IEEE Energy Conversion Congress and Exposition (ECCE)  2022.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Application of A Parallel-Connected SiC MOSFETs to Solid-State Circuit Breakers Based on UIS Tests International conference

    Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa

    33rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  • Progress of Low-Voltage Si-Power MOSFETs Invited International conference

    @Wataru Saito

    2022 International Conference on Solid State Devices and Materials (SSDM)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition International conference

    @Wataru Saito, #Zaiqi Lou and @Shin-ichi Nishizawa

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  • Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V International conference

    Norman Boettcher; Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa; Tobias Erlbacher

    24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  • Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs International conference

    Kohei Horii, Katsuhiro Hata, Ruizhi Wang, @Wataru Saito, and Makoto Takamiya

    34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs International conference

    @Wataru Saito and @Shin-ichi Nishizawa

    34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device International conference

    Norman Boettcher, Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa and Tobias Erlbacher

    34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses International conference

    Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, @Wataru Saito, Yuhao Zhang

    International Reliability Physics Symposium 2022  2022.3 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery International conference

    Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt Smith, @Wataru Saito, Yuhao Zhang

    International Reliability Physics Symposium 2022  2022.3 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode As Avalanche Voltage Clamping International conference

    Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-Ichi Nishizawa

    The Applied Power Electronics Conference (APEC) 2022  2022.3 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers International conference

    #Z. Lou, K. Wada, @W. Saito, @S.-I. Nishizawa

    32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2021.10 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  • Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection International conference

    M. Sagara, K. Wada, @S.-I. Nishizawa, @W. Saito

    32nd EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2021.10 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  • Performance Comparison of Scaled IGBTs and CIGBTs Invited International conference

    Sankara Narayanan Ekkanath Madathil, Peng Luo, @Wataru Saito, and @Shin-ichi Nishizawa

    2021 International Conference on Solid State Devices and Materials  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology International conference

    @Wataru Saito, @Shin-ichi Nishizawa

    33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2021.6 

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    Event date: 2021.5 - 2021.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology International conference

    T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, @W. Saito, @S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

    International Electron Devices Meeting (IEDM) 2020  2020.12 

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    Event date: 2020.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode International conference

    Taro Takamori, Keiji Wada, @Wataru Saito and @Shin-ichi Nishizawa

    31st EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Greece  

  • A Design Direction of Low-Voltage Field Plate Power MOSFETs for FOM Limit International conference

    #Taichi Ogawa, @Wataru Saito, @Shin-ichi Nishizawa

    2020 International Conference on Solid State Devices and Materials (SSDM)  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test International conference

    #Zaiqi Lou, @Wataru Saito, @Shin-ichi Nishizawa

    2020 International Conference on Solid State Devices and Materials (SSDM)  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Switching Controllability Trench Gate Design in Si-IGBTs International conference

    @Wataru Saito; @Shin-ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Austria  

  • Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation International conference

    Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-ichi Nishizawa; @Wataru Saito

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Australia  

  • Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization International conference

    #Ryohei Sato; @Koichi Kakimoto; @Wataru Saito; @Shin-ichi Nishizawa

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Australia  

  • High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation International conference

    Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, @Wataru Saito

    2020 IEEE Applied Power Electronics Conference and Exposition (APEC)  2020.3 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation International conference

    Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, and @Wataru Saito

    International Electron Devices Meeting (IEDM) 2019  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Analysis of oscillatory phenomena in cathode designs for 1200 V diodes using an LCR circuit model in reverse recovery International conference

    Kaori Fuse, Keiko Kawamura, Wataru Saito and Tomoko Matsudai

    International Conference on Solid State Devices and Materials (SSDM)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 3300V scaled IGBTs driven by 5V gate voltage International conference

    Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

    31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2019.5 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  • High accurate IGBT/IEGT compact modeling for prediction of power efficiency and EMI noise International conference

    Takeshi Mizoguchi, Yoko Sakiyama, Naoto Tsukamoto and Wataru Saito

    31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2019.5 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  • Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET International conference

    Wataru Saito

    30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2018.8 

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  • Ultra Low On-Resistance SBD with P-Buried Floating Layer International conference

    Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi

    14th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2002.5 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • 600V Semi-superjunction MOSFET International conference

    Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura

    15th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2003.4 

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    Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  • Design and Demonstration of High Breakdown Voltage GaN-HEMT Using Field Plate Structure for Power Electronics Applications International conference

    Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

    International Conference on Solid State Devices and Materials (SSDM)  2003.9 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • 600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter International conference

    Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

    2003 International Electron Device Meeting (IEDM)  2003.12 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • A 20mΩcm2 600V-class Superjunction MOSFET International conference

    2004.5 

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    Venue:Kitakyushyu   Country:Japan  

  • High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current International conference

    Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

    International Workshop on Nitride Semiconductors (IWN) 2004  2004.7 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • High Voltage AlGaN/GaN Power HEMT for Power Electronics Applications Invited International conference

    Ichiro Omura, Wataru Saito and Kunio Tsuda

    206th Electro Chemical Society meeting (ECS)  2004.10 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Demonstration of High Output Power Density (30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver International conference

    Masanori Tsukuda, Ichiro Omura, Tomokazu Domon, Wataru Saito and Tsuneo Ogura

    7th International Power Engineering Conference (IPEC)  2005.4 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Over 1000V Semi-Superjunction MOSFET with Ultra-Low On-Resistance blow the Si-Limit International conference

    Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura

    17th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2005.5 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • 380V/1.9A GaN Power-HEMT: Current Collapse Phenomena under High Applied Voltage and Demonstration of 27.1MHz Class-E Amplifier International conference

    Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura and Masakazu Yamaguchi

    2005 International Electron Device Meeting (IEDM)  2005.12 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Demonstration of High Output Power Density (50W/cc) Converter using 600V SJ-MOSFET and SiC-SBD International conference

    Masanori Tsukuda, Ichiro Omura, Wataru Saito and Tomokazu Domon

    International Conference on Integrated Power Electronics Systems (CIPS)  2006.6 

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    Presentation type:Oral presentation (general)  

    Country:Italy  

  • A 15.5mΩcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing International conference

    2006.6 

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    Venue:Naples   Country:Italy  

  • Normally-off GaN-MISFET with well-controlled threshold voltage International conference

    Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura

    International Workshop on Nitride Semiconductors (IWN) 2006  2006.10 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT Invited International conference

    Wataru Saito, Ichiro Omura, Tomokazu Domon and Kunio Tsuda

    2006 Compound Semiconductor IC Symposium  2006.11 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • High power density converter using SiC-SBD Invited International conference

    Ichiro Omura, Masanori. Tsukuda, Wataru Saito and Tomokazu Domon

    4th Power Conversion Conference (PCC)  2007.4 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Design concept of n-buffer layer (n-Bottom Assist Layer) for 600V-class Semi-Super Junction MOSFET International conference

    Syotaro Ono, Wataru Saito, Masakatsu Takashita, Shoichiro Kurushima, Ken'ichi Tokano and Masakazu Yamaguchi

    19th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2007.5 

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    Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • High Voltage GaN-HEMTs for Power Electronics Applications and Those Current Collapse Phenomena under High Applied Voltage Invited International conference

    Wataru Saito, Ichiro Omura and Kunio Tsuda

    Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2007  2007.6 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Gallium Nitride power HEMT for high switching frequency power electronics Invited International conference

    Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda

    International Workshop on Physics of Semiconductor Devices (IWPSD) 2007  2007.12 

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    Presentation type:Oral presentation (general)  

    Country:India  

  • Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation International conference

    Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi

    2007 International Electron Device Meeting (IEDM)  2007.12 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • The optimal profile desing for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method International conference

    Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano and Masakazu Yamaguchi

    20th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2008.5 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications International conference

    Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito

    Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2008  2008.6 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT International conference

    Wataru Saito, Tomokazu Domon, Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Kunio Tsuda and Masakazu Yamaguchi

    39th Power Electronics Specialists Conference (PESC)  2008.6 

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    Presentation type:Oral presentation (general)  

    Country:Greece  

  • Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology International conference

    Syotaro Ono, Li Zhang, Hiroshi Ohta, Miho Watanabe, Wataru Saito, Shigo Sato, Hiroyuki Sugaya and Masakazu Yamaguchi

    21st International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2009.5 

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    Presentation type:Oral presentation (general)  

    Country:Spain  

  • Influence of Electric Field upon Current Collapse Phenomena and Reliability in High Voltage GaN-HEMTs International conference

    Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito,Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno

    22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2010.6 

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  • Reliability of GaN-HEMTs for high-voltage switching applications Invited International conference

    Wataru Saito

    2011 International Reliability Physics Symposium (IRPS)  2011.4 

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    Country:United States  

  • A turn-off switching test of high voltage GaN-HEMTs International conference

    Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno and Toru Sugiyama

    9th Topical Workshop on Heterostructure Microelectronics (TWHM)  2011.8 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs International conference

    Wataru Saito, Satoshi Aida, Shigeo Koduki and Masaru Izumisawa

    23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2011.5 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • “Improvement of gate controllability for new generation superjunction MOSFETs: DTMOS-III series International conference

    2011.5 

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    Venue:Nuremberg   Country:Germany  

  • DTMOS-IV: RDS(ON) innovation by deep trench filling superjunction technology International conference

    Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera and Georges Tchouangue

    International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2012  2012.5 

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    Presentation type:Oral presentation (general)  

    Country:Germany  

  • Switching controllability of high voltage GaN-HEMTs and the Cascode connection International conference

    Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Toshiyuki Naka and Toru Sugiyama

    24th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2012.6 

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    Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Comparison of theoretical limits between superjunction and field plate structures International conference

    Wataru Saito

    25th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2013.5 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Requirements to GaN-HEMT from high-power density operation of power electronics system International conference

    Wataru Saito

    10th Topical Workshop on Heterostructure Microelectronics (TWHM)  2013.8 

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    Country:Japan  

  • Power Device Trends for High- Power density operation of power electronics system International conference

    Wataru Saito

    International Conference on Solid State Devices and Materials (SSDM) 2013  2013.9 

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    Country:Japan  

  • An Ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes International conference

    M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai and W. Saito

    The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)  2013.11 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Influence of carrier lifetime control process in superjunction MOSFET characteristics International conference

    Wataru Saito, Shotaro Ono and Hiroaki Yamashita

    26th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2014.6 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Backside field plate effect on suppression of current collapse phenomena in high-voltage GaN-HEMTs International conference

    Wataru Saito, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno

    International Workshop on Nitride Semiconductors (IWN) 2014  2014.8 

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    Presentation type:Oral presentation (general)  

    Country:Poland  

  • Low-resistive contact formation on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers International conference

    Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi H. Iwai

    International Workshop on Nitride Semiconductors (IWN) 2014  2014.8 

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    Presentation type:Oral presentation (general)  

    Country:Poland  

  • Dependence of Ti/C ratio on ohmic contact with TiC electrode for AlGaN/GaN structure International conference

    M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, and H. Iwai and W. Saito

    The 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)  2014.11 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Theoretical loss analysis of power converters with 1200 V class Si-IGBT and SiC-MOSFET International conference

    Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Wataru Saito

    International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2015  2015.5 

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    Presentation type:Oral presentation (general)  

    Country:Germany  

  • Suppression of switching loss dependence on charge imbalance of superjunction MOSFET International conference

    Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

    27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015.5 

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    Presentation type:Oral presentation (general)  

    Country:China  

  • Theoretical limits of superjunction considering with charge imbalance margin International conference

    Wataru Saito

    27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015.5 

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    Country:China  

  • Temperature dependence of single-event burnout for super junction MOSFET International conference

    Shunsuke Katoh, Eiji Shimada, Takayuki Yoshihira, Akihiro Oyama, Syotaro Ono, Hideyuki Ura, Gentaro Ookura, Wataru Saito, Yusuke Kawaguchi

    27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015.5 

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    Country:China  

  • TCAD simulation of high voltage GaN-HEMTs International conference

    Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi

    11th Topical Workshop on Heterostructure Microelectronics (TWHM)  2015.8 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Analysis of GaN-HEMT switching characteristics for high-power applications International conference

    Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch and Hans J?rgen Mattausch

    International Conference on Solid State Devices and Materials (SSDM) 2015  2015.9 

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    Country:Japan  

  • Investigation of breakdown characteristics in high-voltage GaN-HEMTs International conference

    Takeshi Suwa, Wataru Saito, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi

    International Conference on Solid State Devices and Materials (SSDM) 2015  2015.9 

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    Country:Japan  

  • Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications International conference

    2015.10 

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    Venue:Toulouse   Country:France  

  • Breakdown behaviour of high-voltage GaN-HEMTs International conference

    W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

    26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2015.10 

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    Country:France  

  • Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition International conference

    K. Endo, S. Nagamine, W. Saito, T. Matsudai, T. Ogura, T. Setoya, K. Nakamae

    28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016.6 

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  • Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions International conference

    T. Mizoguchi, T. Naka, Y. Tanimoto, Y. Okada, W. Saito, M. Miura-Mattausch and H. J. Mattausch

    28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016.6 

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    Presentation type:Oral presentation (general)  

  • UIS withstanding capability and mechanism of high voltage GaN-HEMTs International conference

    T. Naka and W. Saito

    28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016.6 

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    Presentation type:Oral presentation (general)  

  • UIS test of high-voltage GaN-HEMTs with p-type gate structure International conference

    W. Saito and T. Naka

    27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2016.9 

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    Presentation type:Oral presentation (general)  

    Country:Germany  

  • Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT International conference

    K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

    2016 International Electron Device Meeting (IEDM)  2016.12 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Process design of superjunction MOSFETs for high drain current capability and low on-resistance International conference

    Wataru Saito

    29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2017.5 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs International conference

    Toshiyuki Naka and Wataru Saito

    29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2017.5 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Influence of Gate Characteristics upon UIS Withstanding Capability in High Voltage GaN-HEMTs International conference

    Wataru Saito and Toshiyuki Naka

    12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)  2017.8 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle Invited International conference

    K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

    International Conference on Solid State Devices and Materials (SSDM) 2017  2017.9 

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    Presentation type:Oral presentation (general)  

    Country:Japan  

  • Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs International conference

    Wataru Saito and Toshiyuki Naka

    28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux (France)  2017.9 

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    Presentation type:Oral presentation (general)  

    Country:France  

  • Enhancement of accumulation-mode operation in gate-connected superjunction MOSFET International conference

    Wataru Saito

    14th International Seminar on Power Semiconductors (ISPS)  2018.5 

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    Presentation type:Oral presentation (general)  

    Country:United States  

  • Low noise superjunction MOSFET with integrated snubber structure International conference

    Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Masaru Izumisawa and Wataru Saito

    30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2018.5 

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    Presentation type:Oral presentation (general)  

    Country:United States  

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MISC

  • Power semiconductors for an energy-wise society Reviewed

    Heinz Lendenmann, Sandrine Leroy, Xinqiang Li, Andreas Lindemann, Leo Lorenz, Markus Makoschitz, Renato Minamisawa, Ashitha Narendran, @Shin-ichi Nishizawa, Fumihiko Ohta, Kaushik Rajashekara, Klaus Rigbers, @Wataru Saito, Oliver Senftleben, Akio Shima, Daniel-Ioan Stroe, Kenichi Suga, Hiroshi Takahashi, Markus Thoben, Victor Veliadis, Jan Vobecky, Andreas Volke, Ming Xue

    International Electrotechnical Commission   2023.10

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    Language:English   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • パワーデバイス・パワーICの高性能化技術動向

    パワーデバイス・パワーIC高性能化技術調査専門委員会(委員長 @齋藤 渉)

    電気学会   2020.7

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    Language:Japanese   Publishing type:Internal/External technical report, pre-print, etc.  

  • Siパワーデバイスの最新動向

    齋藤 渉

    技術総合誌[オーム]OHM   2018.1

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

Professional Memberships

  • IEICE

  • Japan Society of Applied Physics

  • IEEE

  • IEEJ

Committee Memberships

  • IEEE   Transaction on Electron Devices Editorial Board  

    2019.11 - Present   

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    Committee type:Academic society

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  • 電子情報通信学会 電子デバイス研究会   委員  

    2018.6 - Present   

  • 電気学会 C部門 電子デバイス技術委員会   委員  

    2017.4 - Present   

  • 電気学会 パワーデバイス・パワーIC高性能化技術調査専門委員会   委員長  

    2017.4 - 2020.3   

  • IEEE Electron Device Society, Power Devices and ICs Technical Committee   Committee  

    2015.12 - 2020.12   

Academic Activities

  • SSDM Award選考委員

    Role(s): Review, evaluation

    応用物理学会  2024.9

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    Type:Academic society, research group, etc. 

  • SSDM Award評価委員 International contribution

    2023.9

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)  ( Hsinchu Taiwan ) 2023.8

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    Type:Competition, symposium, etc. 

  • 文部科学省委託「令和5年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

    Role(s): Review, evaluation

    2023.6 - 2024.3

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    Type:Scientific advice/Review 

  • Technical Program Committee International contribution

    7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023  ( Seoul Korea ) 2023.3

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    Type:Competition, symposium, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2023

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:44

    Proceedings of International Conference Number of peer-reviewed papers:15

  • SSDM Award評価委員 International contribution

    2022.9

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)  ( Warwick UnitedKingdom ) 2022.9

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)  ( Nagoya Japan ) 2022.9

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022  ( Hiroshima Japan ) 2022.8 - 2022.9

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    Type:Competition, symposium, etc. 

  • 文部科学省委託「令和4年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

    Role(s): Review, evaluation

    2022.6 - 2023.3

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    Type:Scientific advice/Review 

  • Technical Program Committee International contribution

    6th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2022  ( Oita Japan ) 2022.3

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    Type:Competition, symposium, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2022

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:35

    Proceedings of International Conference Number of peer-reviewed papers:104

  • Technical Program Committee International contribution

    IEEE International Electron Devices Meeting (IEDM)  ( San Francisco UnitedStatesofAmerica ) 2021.12

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    5th IEEE International Future Energy Electronics Conference  ( Online Taiwan ) 2021.11

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    Type:Competition, symposium, etc. 

  • 文部科学省委託「令和3年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

    Role(s): Review, evaluation

    2021.10 - 2022.3

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    Type:Scientific advice/Review 

  • International Program Committee International contribution

    15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS (ISPS) 2021  ( Prague CzechRepublic ) 2021.8

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    Type:Competition, symposium, etc. 

  • Organizing Committee International contribution

    33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Online Japan ) 2021.5 - 2021.6

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    Type:Competition, symposium, etc. 

    Number of participants:505

  • Screening of academic papers

    Role(s): Peer review

    2021

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:26

    Proceedings of International Conference Number of peer-reviewed papers:75

  • Technical Program Committee International contribution

    IEEE International Electron Devices Meeting (IEDM)  ( Online UnitedStatesofAmerica ) 2020.12

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2020  ( Kyoto Japan ) 2020.9

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Online Austria ) 2020.9

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    Type:Competition, symposium, etc. 

  • Chair International contribution

    ECPE Workshop Power Semiconductor Robustness - What Kills Power Devices?  ( Munich Germany ) 2020.1

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    Type:Competition, symposium, etc. 

    Number of participants:130

  • Screening of academic papers

    Role(s): Peer review

    2020

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:33

    Proceedings of International Conference Number of peer-reviewed papers:46

  • IEEE Transactions on Electron Devices International contribution

    2019.12 - 2028.12

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    Type:Academic society, research group, etc. 

  • Technical Program Committee International contribution

    31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Shanghai China ) 2019.5

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    Type:Competition, symposium, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2019

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:18

    Proceedings of International Conference Number of peer-reviewed papers:71

  • Technical Program Committee International contribution

    30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Chicago UnitedStatesofAmerica ) 2018.5

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    Type:Competition, symposium, etc. 

  • Steering Committee, Technical Program Committee International contribution

    29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Sapporo Japan ) 2017.5 - 2017.6

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    Type:Competition, symposium, etc. 

  • Technical Program Committee International contribution

    28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Prague CzechRepublic ) 2016.6

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    Type:Competition, symposium, etc. 

  • Steering Committee International contribution

    25th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  ( Kanazawa Japan ) 2013.5

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    Type:Competition, symposium, etc. 

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Research Projects

  • 脱炭素とパワーエレクトロニクスのDXを実現する劣化検出技術

    Grant number:120243506  2024.4 - 2026.3

    日本学術振興会  二国間交流 

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    Authorship:Principal investigator  Grant type:Competitive funding other than Grants-in-Aid for Scientific Research

  • 東芝デバイス&ストレージ学術奨励制度

    2024

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    Grant type:Donation

  • 東芝インフラシステムズ学術奨励制度

    2024

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    Grant type:Donation

  • 低ネガワットコストモジュール設計法のFS研究

    2023.8 - 2026.7

    共同研究

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    Authorship:Coinvestigator(s)  Grant type:Other funds from industry-academia collaboration

  • 低損失GaNパワーIC実現に向けた高電圧ストレスによる破壊メカニズムの研究

    Grant number:23H01469  2023 - 2026

    日本学術振興会  科学研究費助成事業  基盤研究(B)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • 東芝インフラシステムズ学術奨励制度

    2023

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    Grant type:Donation

  • 東芝デバイス&ストレージ学術奨励制度

    2023

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    Grant type:Donation

  • 東芝インフラシステムズ学術奨励制度

    2022

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    Grant type:Donation

  • 東芝デバイス&ストレージ学術奨励制度

    2022

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    Grant type:Donation

  • 省エネエレクトロニクスの製造基盤強化に向けた技術開発事業「大口径インテリジェント・シリコンパワー半導体の開発」

    2021.6 - 2026.2

    国立研究開発法人新エネルギー・産業技術総合開発機構(NEDO) 

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    Authorship:Coinvestigator(s)  Grant type:Competitive funding other than Grants-in-Aid for Scientific Research

  • 低炭素社会実現に向けた高耐量・高信頼なSiCパワーデバイスを用いた直流遮断器

    2021 - 2022

    日本学術振興会  二国間交流

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    Authorship:Principal investigator  Grant type:Joint research

  • 東芝デバイス&ストレージ学術奨励制度

    2021

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    Grant type:Donation

  • 東芝インフラシステムズ学術奨励制度

    2021

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    Grant type:Donation

  • AIゲートドライブの最適駆動変数の決定方法に関する理論構築と実証

    2020.12 - 2022.9

    共同研究

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    Authorship:Coinvestigator(s)  Grant type:Other funds from industry-academia collaboration

  • パワーモジュール劣化モニタリングFS研究

    2020.10 - 2022.8

    共同研究

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    Authorship:Principal investigator  Grant type:Other funds from industry-academia collaboration

  • 新世代Si-IGBT と応用基本技術の研究開発

    2019.4 - 2020.3

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    「IGBT のスケーリング則」に基づいた「新世代 Si-IGBT と応用基本技術」を産学官が一体となり実用化を念頭に開発・実証

  • 高効率電気自動車に向けた理論限界を超える新規低耐圧パワーMOSFETの構造と制御

    Grant number:1 9 K 2 3 5 1 8  2019 - 2020

    日本学術振興会  科学研究費助成事業  研究活動スタート支援

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    Authorship:Principal investigator  Grant type:Scientific research funding

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Educational Activities

  • Device Science and Engineering, Interdisciplinary Graduate School of Engineering and Sciences

Class subject

  • パワーデバイス工学基礎

    2023.6 - 2023.8   Summer quarter

  • 総合理工学修士演習

    2023.4 - 2024.3   Full year

  • 総合理工学修士演習

    2023.4 - 2024.3   Full year

  • 総合理工学修士実験

    2023.4 - 2024.3   Full year

  • 融合工学概論Ⅰ

    2023.4 - 2023.9   First semester

  • 異分野特別演習

    2023.4 - 2023.9   First semester

  • パワーデバイス工学基礎

    2022.6 - 2022.8   Summer quarter

  • 総合理工学修士実験

    2022.4 - 2023.3   Full year

  • 総合理工学修士演習

    2022.4 - 2023.3   Full year

  • パワーデバイス工学演習

    2021.10 - 2022.3   Second semester

  • パワーデバイス工学基礎

    2021.6 - 2021.8   Summer quarter

  • パワーデバイス工学実験

    2021.4 - 2022.3   Full year

  • パワーデバイス工学

    2020.10 - 2021.3   Second semester

  • パワーデバイス工学演習

    2020.10 - 2021.3   Second semester

  • パワーデバイス工学実験

    2020.4 - 2021.3   Full year

  • パワーデバイス工学基礎

    2024.6 - 2024.8   Summer quarter

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Visiting, concurrent, or part-time lecturers at other universities, institutions, etc.

  • 2024  東京大学生産技術研究所 リサーチフェロー   Domestic/International Classification:Japan 

  • 2023  東京大学生産技術研究所 リサーチフェロー  Domestic/International Classification:Japan 

  • 2022  東京大学生産技術研究所 リサーチフェロー  Domestic/International Classification:Japan 

  • 2021  東京大学生産技術研究所 リサーチフェロー  Domestic/International Classification:Japan 

  • 2020  東京大学生産技術研究所 リサーチフェロー  Domestic/International Classification:Japan 

  • 2019  東京大学生産技術研究所 リサーチフェロー  Domestic/International Classification:Japan 

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Teaching Student Awards

  • 令和6年度電子デバイス研究会論文発表奨励賞

    Year and month of award:2024.7

    Classification of award-winning students:Postgraduate student   Name of award-winning student:大亀 幸樹

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    Classification of the awarding organization:Postgraduate student   Awarding organization:大亀 幸樹

    パワーサイクルセンサの感度向上に向けた新規構造の検討

Outline of Social Contribution and International Cooperation activities

  • 産学連携コンソーシアムである一般社団法人NPERC-Jのアカデミア会員、中核研究拠点として、新世代パワーエレクトロニクスに関する調査・研究活動を牽引している。また欧米の産学連携コンソーシアムとコンソーシアム間で連携協定を結び、ロードマップ共有、共同研究の日本側メンバーとして活動している。