Mechanism of gate voltage spike under digital gate control at IGBT switching operations 査読 国際誌

#Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Power Electronic Devices and Components   7   2024年4月

Study on stress in trench structures during silicon IGBTs process-oxidation

Cai, BZ; Yuan, JY; Miyamura, Y; Saito, W; Nishizawa, SI

JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 3 )   2024年3月   （ ISSN:0021-4922 eISSN:1347-4065 ）

A Future Outlook of Power Devices From the Viewpoint of Power Electronics Trends 査読 国際誌

@Wataru Saito

IEEE Transactions on Electron Devices   71 ( 3 )   1356 - 1364   2024年3月

IGBT ターンオフスイッチングにおけるサージ電圧解析 査読

#藤本 侑里, @西澤 伸一, @齋藤 渉

電気学会論文誌C（電子・情報・システム部門誌）   144 ( 3 )   198 - 203   2024年3月

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping 査読 国際誌

Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa

IEEE Open Journal of Power Electronics   5   392 - 401   2024年2月

Turn-off switching voltage surge analysis with dependence on IGBT cell design 査読 国際誌

#Yuri Fujimoto, @Shin-ichi Nishizawa and @Wataru Saito

Japanese Journal of Applied Physics   63 ( 2 )   02SP36   2024年2月

Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors 査読 国際誌

Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, @Wataru Saito and Toshiro Hiramoto

Japanese Journal of Applied Physics   63 ( 2 )   02SP57   2024年2月

Overvoltage Failure Process of Cascode GaN Field Effect Transistors 査読 国際誌

@Wataru Saito, @Shin-ichi Nishizawa

Physica Status Solidi a applications and materials science   221   2300791   2024年1月

Device Design Direction of CSTBT for Low Loss and EMI Noise 査読 国際誌

Koichi Nishi; Kazuya Konishi; Toshiya Tadakuma; Akihiko Furukawa; @Wataru Saito

IEEE Transactions on Electron Devices   70 ( 12 )   6144 - 6150   2023年12月

Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control 査読 国際誌

#Thatree Mamee, #Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Power Electronic Devices and Components   6   2023年10月

Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker 査読 国際誌

Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa

Microelectronics Reliability   150   115119   2023年10月

The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control 査読 国際誌

#Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Power Electronic Devices and Components   6   2023年10月

Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device 査読 国際誌

Taro Takamori, Keiji Wada, Norman Boettcher, Tobias Erlbacher, @Wataru Saito, @Shin-ichi Nishizawa

IEEE Transactions on Industry Applications   59 ( 5 )   6427 - 6435   2023年9月

Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module 査読 国際誌

#Thatree Mamee, #Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, @Shin-ichi Nishizawa, @Wataru Saito

Microelectronics Reliability   147 ( 11 )   115067   2023年8月

A simple sensor device for power cycle degradation sensing 査読 国際誌

#Tatsuta Tsukamoto, @Shin-ichi Nishizawa, @Wataru Saito

Microelectronics Reliability   147 ( 11 )   115068   2023年8月

Stability, Reliability, and Robustness of GaN Power Devices: A Review 査読 国際誌

Joseph Peter Kozak; Ruizhe Zhang; Matthew Porter; Qihao Song; Jingcun Liu; Bixuan Wang; Rudy Wang; @Wataru Saito; Yuhao Zhang

IEEE Transactions on Power Electronics   38 ( 7 )   8442 - 8471   2023年7月

Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot 査読 国際誌

Kohei Horii; Hiroki Yano; Katsuhiro Hata; Ruizhi Wang; Kazuto Mikami; Kenji Hatori; Koji Tanaka; @Wataru Saito; Makoto Takamiya

IEEE Transactions on Power Electronics   38 ( 7 )   8075 - 8088   2023年7月

Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress 査読 国際誌

@Wataru Saito, @Shin-Ichi Nishizawa

The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   84 - 87   2023年5月

Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes 査読 国際誌

Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-Ichi Nishizawa

2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)   2023年5月

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process 招待 査読 国際誌

#Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, @Wataru Saito, and @Shin-ichi Nishizawa

Abstract of 7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023   452 - 454   2023年3月

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method 招待 査読 国際誌

@Wataru Saito

Japanese Journal of Applied Physics   62 ( SC )   SC0803-1 - SC0803-6   2023年1月

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control 査読 国際誌

#Zaiqi Lou, #Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, @Shin-Ichi Nishizawa, @Wataru Saito

IEEE Access   11   6632 - 6640   2023年1月

Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage 査読 国際誌

Joseph P. Kozak; Qihao Song; Ruizhe Zhang; Yunwei Ma; Jingcun Liu; Qiang Li; @Wataru Saito; Yuhao Zhang

IEEE Transactions on Power Electronics   38 ( 1 )   435 - 446   2023年1月

Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules 査読 国際誌

Toshiaki Inuma; Katsuhiro Hata; Toru Sai; @Wataru Saito; Makoto Takamiya

Proceedings of IEEE 7th Southern Power Electronics Conference (SPEC)   2022年12月

Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests 査読 国際誌

#Zaiqi Lou, @Wataru Saito, @Shin-ichi Nishizawa

Microelectronics Reliability   138   114737   2022年11月

Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device 査読 国際誌

Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; @Wataru Saito; @Shin-Ichi Nishizawa

Proceedings of 2022 IEEE Energy Conversion Congress and Exposition (ECCE)   2022年10月

Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor 査読 国際誌

@Wataru Saito; #Zaiqi Lou; @Shin-Ichi NIshizawa

IEEE Transactions on Electron Devices   69 ( 10 )   5671 - 5677   2022年10月

Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition 査読 国際誌

@Wataru Saito; #Zaiqi Lou; @Shin-ichi Nishizawa

Proceedings of 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)   2022年9月

Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V 査読 国際誌

Norman Boettcher; Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa; Tobias Erlbacher

Proceedings of 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)   2022年9月

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET 査読 国際誌

@Wataru Saito, and @Shin-ichi Nishizawa

IEEE Journal of the Electron Devices Society   10   512 - 515   2022年6月

Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs 査読 国際誌

Kohei Horii, Katsuhiro Hata, Ruizhi Wang, @Wataru Saito, and Makoto Takamiya

Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   293 - 296   2022年5月

Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs 査読 国際誌

@Wataru Saito, and @Shin-ichi Nishizawa

Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   53 - 56   2022年5月

Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device 査読 国際誌

Norman Boettcher, Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa and Tobias Erlbacher

Proceedings of 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)   261 - 264   2022年5月

Scaling Design Effects on Surface Buffer IGBT Characteristics 査読 国際誌

@Wataru Saito and @Shin-ichi Nishizawa

IEEE, Journal of Electron Device Society   10   23 - 28   2022年2月

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices 招待 査読 国際誌

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Wataru Saito and @Shin-ichi Nishizawa

Japanese Journal of Applied Physics   61   SC0801-1 - SC0801-8   2022年2月

Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to solid-state circuit breakers 招待 査読 国際誌

#Zaiqi Lou, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa

Microelectronics Reliability   126 ( 11 )   114270   2021年11月

Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection 査読 国際誌

Mitsuhiko Sagara, Keiji Wada, @Shin-ichi Nishizawa, @Wataru Saito

Microelectronics Reliability   126 ( 11 )   114237   2021年11月

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability 査読 国際誌

@Wataru Saito, @Shin-Ichi Nishizawa

IEEE Electron Device Letters   42 ( 6 )   907 - 910   2021年6月

Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology 査読 国際誌

@Wataru Saito, @Shin-ichi Nishizawa

Proceedings of 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   271 - 274   2021年6月

Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits 査読 国際誌

#Taichi Ogawa, @Wataru Saito, @Shin-Ichi Nishizawa

IEEE Journal of the Electron Devices Society   9   552 - 556   2021年5月

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching 査読 国際誌

Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, @Wataru Saito, and Yuhao Zhang

IEEE Electron Device Letters   42 ( 4 )   505 - 508   2021年4月

Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test 査読 国際誌

#Zaiqi Lou, @Wataru Saito, and @Shin-ichi Nishizawa

Japanese Journal of Applied Physics   60   SBBD18-1 - SBBD18-7   2021年3月

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices 査読 国際誌

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-Ichi Nishizawa; @Wataru Saito

IEEE Transactions on Power Electronics   36 ( 3 )   3304 - 3311   2021年3月

A design direction of low-voltage field-plate power MOSFETs for figure-of-merit (FOM) limit 査読 国際誌

#Taichi Ogawa , @Wataru Saito and @Shin-ichi Nishizawa

Japanese Journal of Applied Physics   60   SBBD16-1 - SBBD16-5   2021年3月

3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology 査読 国際誌

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, @W. Saito, @S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

International Electron Devices Meeting (IEDM) 2020   2020年12月

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor 査読 国際誌

@Wataru Saito; @Shin-ichi Nishizawa

IEEE Electron Device Letters   41 ( 12 )   1814 - 1816   2020年12月

Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode 査読 国際誌

Taro Takamori, Keiji Wada, @Wataru Saitob, @Shin-ichi Nishizawab

Microelectronics Reliability   114   2020年11月

Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization 査読 国際誌

#Ryohei Sato; @Koichi Kakimoto; @Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   494 - 497   2020年9月

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation 査読 国際誌

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-ichi Nishizawa; @Wataru Saito

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   470 - 473   2020年9月

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices 査読 国際誌

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-Ichi Nishizawa; @Wataru Saito

IEEE Transactions on Electron Devices   67 ( 9 )   3691 - 3697   2020年9月

High Switching Controllability Trench Gate Design in Si-IGBTs 査読 国際誌

@Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)   447 - 450   2020年9月

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance 査読 国際誌

@Wataru Saito, @Shin-Ichi Nishizawa

IEEE Transactions on Electron Devices   67 ( 8 )   3285 - 3290   2020年8月

Surface Buffer IGBT for High Total Performance 査読 国際誌

@Wataru Saito, @Shin-Ichi Nishizawa

IEEE Transactions on Electron Devices   67 ( 8 )   3263 - 3269   2020年8月

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness 査読 国際誌

#Taichi Ogawa, @Wataru Saito, and @Shin-Ichi Nishizawa

IEEE Electron Device Letters   41 ( 7 )   1063 - 1065   2020年7月

Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off 査読 国際誌

@Wataru Saito, @Shin-ichi Nishizawa

IEEE Electron Device Letters   41 ( 7 )   1060 - 1062   2020年7月

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs 査読 国際誌

Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, @Wataru Saito, @Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

IEEE Transactions on Semiconductor Manufacturing   33 ( 2 )   159 - 165   2020年5月

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation 査読 国際誌

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, @Wataru Saito

2020 IEEE Applied Power Electronics Conference and Exposition (APEC)   686 - 689   2020年3月

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation 査読 国際誌

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, and @Wataru Saito

International Electron Devices Meeting (IEDM) 2019   266 - 269   2019年12月

HiSIM_GaN: Compact Model for GaN-HEMT With Accurate Dynamic Current-Collapse Reproduction 査読 国際誌

Yasuhiro Okada ; Takeshi Mizoguchi ; Yuta Tanimoto ; Hideyuki Kikuchihara ; Toshiyuki Naka ; Wataru Saito ; Mitiko Miura-Mattausch ; Hans J?ergen Mattausch

IEEE Transactions on Electron Devices   66 ( 1 )   106 - 115   2019年1月

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs 査読 国際誌

Wataru Saito and Toshiyuki Naka

Elsevier Microelectronics Reliability   76-77   309 - 313   2017年11月

Modeling of field-plate effect on gallium-nitride-based high electron mobility transistors for high-power applications 査読 国際誌

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans J?rgen Mattausch

IEICE Transactions on Electronics   E100.C ( 3 )   321 - 328   2017年3月

UIS test of high-voltage GaN-HEMTs with p-type gate structure 査読 国際誌

W. Saito and T. Naka

Elsevier Microelectronics Reliability   64   552 - 555   2016年11月

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors 査読 国際誌

Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, and Hiroshi Iwai

Japanese J. of Applied Physics   55   40306   2016年2月

Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model 査読 国際誌

Japanese J. of Applied Physics   55   04EG03   2016年2月

Destruction failure analysis and international reliability test standard for power devices 査読 国際誌

Takashi Setoya, , Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo

Elsevier Microelectronics Reliability   55   1932 - 1937   2015年11月

Breakdown behaviour of high-voltage GaN-HEMTs 査読 国際誌

W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

Elsevier Microelectronics Reliability   55   1682 - 1686   2015年11月

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning　spreading resistance microscopy (SSRM) for power device applications 査読 国際誌

55   1159 - 1163   2015年11月

Reduction of contact resistance on AlGaN/GaN HEMT structures by introducing uneven AlGaN layersm 査読 国際誌

Yusuke Takei, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

Physica Status Solidi A   212 ( 5 )   1104 - 1109   2015年8月

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures 査読 国際誌

Yusuke Takei, Mari Okamoto, Wataru Saito, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

Electro Chemical Society Transactions   61 ( 4 )   265 - 270   2014年10月

Power device trends for high-power density operation of power electronics system 査読 国際誌

Wataru Saito

Japanese J. of Applied Physics   53   04EP02   2014年2月

GaN-HEMTs for high-voltage switching applications 査読 国際誌

Wataru Saito

Electro Chemical Society Transactions   41 ( 8 )   43 - 49   2011年10月

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs 査読 国際誌

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, and Masakazu Yamaguchi

IEEE Electron Device Letters   31 ( 7 )   659 - 661   2010年7月

Effect of buffer layer structure on drain leakage current and current collapse phenomena in high-voltage GaN-HEMTs 査読 国際誌

Wataru Saito, Takao Noda, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi

IEEE Trans. Electron Devices   56 ( 7 )   1371 - 1376   2009年7月

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT 査読 国際誌

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

IEEE Electron Device Letters   29 ( 1 )   8 - 10   2008年1月

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With optimized Field-Plate Structure 査読 国際誌

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

IEEE Trans. Electron Devices   54 ( 8 )   1825 - 1830   2007年8月

ON-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage 査読 国際誌

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura and Masakazu Yamaguchi

IEEE Electron Device Letters   28 ( 8 )   676 - 678   2007年8月

Normally-off GaN-MISFET with well-controlled threshold voltage 査読 国際誌

Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura

Physical State Solid (a)   204 ( 6 )   2010 - 2013   2007年6月

Demonstration of 13.56-MHz Class-E Amplifier Using a High- Voltage GaN Power-HEMT 査読 国際誌

Wataru Saito, Tomokazu Domon, Ichiro Omura, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda and Masakazu Yamaguchi

IEEE Electron Device Letters   27 ( 5 )   326 - 328   2006年5月

Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications 査読 国際誌

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda and Ichiro Omura

IEEE Trans. Electron Devices   53 ( 2 )   356 - 362   2006年2月

High Breakdown Voltage (>1000V) Semi-Superjunction MOSFETs Using 600-V Class Superjunction MOSFET Process 査読 国際誌

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura

IEEE Trans. Electron Devices   52 ( 10 )   2317 - 2322   2005年10月

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current 査読 国際誌

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

Physical State Solid (c)   2 ( 7 )   2647 - 2650   2005年7月

Influence of Surface Defect Charge at AlGaN-GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage 査読 国際誌

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

IEEE Trans. Electron Devices   52 ( 2 )   159 - 164   2005年2月

Design Optimization of High Breakdown Voltage AlGaN-GaN Power HEMT on an Insulating Substrate for RonA-VB Tradeoff Characteristics 査読 国際誌

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

IEEE Trans. Electron Devices   52 ( 1 )   106 - 111   2005年1月

High Breakdown Voltage Undoped AlGaN-GaN Power-HEMT on Sapphire Substrate and Its Demonstration for DC-DC Converter Application 査読 国際誌

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

IEEE Trans. Electron Devices   51 ( 11 )   1913 - 1917   2004年11月

A Novel Low On-Resistance Schottky-Barrier Diode with p-Buried Floating Layer Structure 査読 国際誌

Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi

IEEE Trans. Electron Devices   51 ( 5 )   797 - 802   2004年5月

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device 査読 国際誌

Wataru Saito, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi

Solid-State Electronics   48 ( 4 )   1555 - 1562   2004年4月

Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications 査読 国際誌

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

Japanese Journal of Applied Physics   43 ( 4 )   2239 - 2242   2004年4月

High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior 査読 国際誌

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi

IEEE Trans. Electron Devices   50 ( 12 )   2528 - 2531   2003年12月

Semisuperjunction MOSFETs: New Design Concept for Lower On-Resistance and Softer Reverse-Recovery Body Diode 査読 国際誌

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura

IEEE Trans. Electron Devices   50 ( 8 )   1801 - 1806   2003年8月

High Voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics 査読 国際誌

Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura and Kunio Tsuda

Physical State Solid (c)   0 ( 7 )   2347 - 2350   2003年7月

パワー半導体の現状と将来展望 招待

齋藤　渉

nano tech 2024 特別シンポジウム  2024年2月  nano tech実行委員会

Overvoltage Failure Process of Cascode GaN FETs 国際会議

@Wataru Saito, and @Shin-ichi Nishizawa

14th International Conference on Nitride Semiconductors (ICNS)  2023年11月 

パワーエレクトロニクス応用動向から見たパワーデバイスの将来展望 招待

@齋藤　渉

電気学会　電子デバイス/半導体電力変換研究会  2023年10月 

Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker 国際会議

T. Takamori, K. Wada, @W. Saito, @S. Nishizawa

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023年10月 

Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module 国際会議

#T. Mamee, #Z. Lou, K. Hata, M. Takamiya, @S. Nishizawa, @W. Saito

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023年10月 

A simple sensor device for power cycle degradation sensing 国際会議

#T. Tsukamoto, @S. Nishizawa, @W. Saito

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2023年10月 

Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design 国際会議

#Yuri Fujimoto, @Shin-ichi Nishizawa, @Wataru Saito

2023 International Conference on Solid State Devices and Materials (SSDM)  2023年9月 

Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method 国際会議

Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, @Wataru Saito, Toshiro Hiramoto

2023 International Conference on Solid State Devices and Materials (SSDM)  2023年9月 

Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation 国際会議

2023年9月 

Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs 国際会議

#Hiroaki Kato, #Bozhou Cai, #Jiuyang Yuan, Yoshiji Miyamura, @Shin-ichi Nishizawa, @Wataru Saito

2023 International Conference on Solid State Devices and Materials (SSDM)  2023年9月 

Avalanche breakdown behavior and robustness of SiC and GaN transistors 招待 国際会議

@Wataru Saito

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2023  2023年8月 

Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress 国際会議

@Wataru Saito, @Shin-Ichi Nishizawa

The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2023年5月 

Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes 国際会議

Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-Ichi Nishizawa

2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)  2023年5月 

The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process 国際会議

#Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, @Wataru Saito, and @Shin-ichi Nishizawa

7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023  2023年3月 

Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules 国際会議

Toshiaki Inuma; Katsuhiro Hata; Toru Sai; @Wataru Saito; Makoto Takamiya

IEEE 7th Southern Power Electronics Conference (SPEC)  2022年12月 

Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device 国際会議

Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; @Wataru Saito; @Shin-Ichi Nishizawa

2022 IEEE Energy Conversion Congress and Exposition (ECCE)  2022年10月 

Application of A Parallel-Connected SiC MOSFETs to Solid-State Circuit Breakers Based on UIS Tests 国際会議

Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa

33rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2022年9月 

Progress of Low-Voltage Si-Power MOSFETs 招待 国際会議

@Wataru Saito

2022 International Conference on Solid State Devices and Materials (SSDM)  2022年9月 

Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition 国際会議

@Wataru Saito, #Zaiqi Lou and @Shin-ichi Nishizawa

IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe)  2022年9月 

Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V 国際会議

Norman Boettcher; Taro Takamori; Keiji Wada; @Wataru Saito; @Shin-ichi Nishizawa; Tobias Erlbacher

24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)  2022年9月 

Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs 国際会議

Kohei Horii, Katsuhiro Hata, Ruizhi Wang, @Wataru Saito, and Makoto Takamiya

34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022年5月 

Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs 国際会議

@Wataru Saito and @Shin-ichi Nishizawa

34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022年5月 

Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device 国際会議

Norman Boettcher, Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-ichi Nishizawa and Tobias Erlbacher

34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2022年5月 

Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses 国際会議

Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, @Wataru Saito, Yuhao Zhang

International Reliability Physics Symposium 2022  2022年3月 

GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery 国際会議

Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt Smith, @Wataru Saito, Yuhao Zhang

International Reliability Physics Symposium 2022  2022年3月 

Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode As Avalanche Voltage Clamping 国際会議

Taro Takamori, Keiji Wada, @Wataru Saito, @Shin-Ichi Nishizawa

The Applied Power Electronics Conference (APEC) 2022  2022年3月 

Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers 国際会議

#Z. Lou, K. Wada, @W. Saito, @S.-I. Nishizawa

32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2021年10月 

Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection 国際会議

M. Sagara, K. Wada, @S.-I. Nishizawa, @W. Saito

32nd EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2021年10月 

Performance Comparison of Scaled IGBTs and CIGBTs 招待 国際会議

Sankara Narayanan Ekkanath Madathil, Peng Luo, @Wataru Saito, and @Shin-ichi Nishizawa

2021 International Conference on Solid State Devices and Materials  2021年9月 

Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology 国際会議

@Wataru Saito, @Shin-ichi Nishizawa

33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2021年6月 

3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology 国際会議

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, @W. Saito, @S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

International Electron Devices Meeting (IEDM) 2020  2020年12月 

Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode 国際会議

Taro Takamori, Keiji Wada, @Wataru Saito and @Shin-ichi Nishizawa

31st EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF)  2020年10月 

A Design Direction of Low-Voltage Field Plate Power MOSFETs for FOM Limit 国際会議

#Taichi Ogawa, @Wataru Saito, @Shin-ichi Nishizawa

2020 International Conference on Solid State Devices and Materials (SSDM)  2020年9月 

Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test 国際会議

#Zaiqi Lou, @Wataru Saito, @Shin-ichi Nishizawa

2020 International Conference on Solid State Devices and Materials (SSDM)  2020年9月 

High Switching Controllability Trench Gate Design in Si-IGBTs 国際会議

@Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020年9月 

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation 国際会議

Peng Luo; Sankara Narayanan Ekkanath Madathil; @Shin-ichi Nishizawa; @Wataru Saito

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020年9月 

Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization 国際会議

#Ryohei Sato; @Koichi Kakimoto; @Wataru Saito; @Shin-ichi Nishizawa

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2020年9月 

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation 国際会議

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, @Wataru Saito

2020 IEEE Applied Power Electronics Conference and Exposition (APEC)  2020年3月 

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation 国際会議

Peng Luo, Sankara Narayanan Ekkanath Madathil, @Shin-ichi Nishizawa, and @Wataru Saito

International Electron Devices Meeting (IEDM) 2019  2019年12月 

Analysis of oscillatory phenomena in cathode designs for 1200 V diodes using an LCR circuit model in reverse recovery 国際会議

Kaori Fuse, Keiko Kawamura, Wataru Saito and Tomoko Matsudai

International Conference on Solid State Devices and Materials (SSDM)  2019年9月 

3300V scaled IGBTs driven by 5V gate voltage 国際会議

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto

31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2019年5月 

High accurate IGBT/IEGT compact modeling for prediction of power efficiency and EMI noise 国際会議

Takeshi Mizoguchi, Yoko Sakiyama, Naoto Tsukamoto and Wataru Saito

31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2019年5月 

Ultra Low On-Resistance SBD with P-Buried Floating Layer 国際会議

Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi

14th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2002年5月 

600V Semi-superjunction MOSFET 国際会議

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura

15th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2003年4月 

Design and Demonstration of High Breakdown Voltage GaN-HEMT Using Field Plate Structure for Power Electronics Applications 国際会議

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

International Conference on Solid State Devices and Materials (SSDM)  2003年9月 

600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter 国際会議

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura

2003 International Electron Device Meeting (IEDM)  2003年12月 

A 20mΩcm2 600V-class Superjunction MOSFET 国際会議

2004年5月 

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current 国際会議

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda

International Workshop on Nitride Semiconductors (IWN) 2004  2004年7月 

High Voltage AlGaN/GaN Power HEMT for Power Electronics Applications 招待 国際会議

Ichiro Omura, Wataru Saito and Kunio Tsuda

206th Electro Chemical Society meeting (ECS)  2004年10月 

Demonstration of High Output Power Density (30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver 国際会議

Masanori Tsukuda, Ichiro Omura, Tomokazu Domon, Wataru Saito and Tsuneo Ogura

7th International Power Engineering Conference (IPEC)  2005年4月 

Over 1000V Semi-Superjunction MOSFET with Ultra-Low On-Resistance blow the Si-Limit 国際会議

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura

17th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2005年5月 

380V/1.9A GaN Power-HEMT: Current Collapse Phenomena under High Applied Voltage and Demonstration of 27.1MHz Class-E Amplifier 国際会議

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura and Masakazu Yamaguchi

2005 International Electron Device Meeting (IEDM)  2005年12月 

Demonstration of High Output Power Density (50W/cc) Converter using 600V SJ-MOSFET and SiC-SBD 国際会議

Masanori Tsukuda, Ichiro Omura, Wataru Saito and Tomokazu Domon

International Conference on Integrated Power Electronics Systems (CIPS)  2006年6月 

A 15.5mΩcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing 国際会議

2006年6月 

Normally-off GaN-MISFET with well-controlled threshold voltage 国際会議

Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura

International Workshop on Nitride Semiconductors (IWN) 2006  2006年10月 

High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT 招待 国際会議

Wataru Saito, Ichiro Omura, Tomokazu Domon and Kunio Tsuda

2006 Compound Semiconductor IC Symposium  2006年11月 

High power density converter using SiC-SBD 招待 国際会議

Ichiro Omura, Masanori. Tsukuda, Wataru Saito and Tomokazu Domon

4th Power Conversion Conference (PCC)  2007年4月 

Design concept of n-buffer layer (n-Bottom Assist Layer) for 600V-class Semi-Super Junction MOSFET 国際会議

Syotaro Ono, Wataru Saito, Masakatsu Takashita, Shoichiro Kurushima, Ken'ichi Tokano and Masakazu Yamaguchi

19th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2007年5月 

High Voltage GaN-HEMTs for Power Electronics Applications and Those Current Collapse Phenomena under High Applied Voltage 招待 国際会議

Wataru Saito, Ichiro Omura and Kunio Tsuda

Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2007  2007年6月 

Gallium Nitride power HEMT for high switching frequency power electronics 招待 国際会議

Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda

International Workshop on Physics of Semiconductor Devices (IWPSD) 2007  2007年12月 

Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation 国際会議

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi

2007 International Electron Device Meeting (IEDM)  2007年12月 

The optimal profile desing for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method 国際会議

Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano and Masakazu Yamaguchi

20th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2008年5月 

Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications 国際会議

Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito

Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2008  2008年6月 

Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT 国際会議

Wataru Saito, Tomokazu Domon, Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Kunio Tsuda and Masakazu Yamaguchi

39th Power Electronics Specialists Conference (PESC)  2008年6月 

Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology 国際会議

Syotaro Ono, Li Zhang, Hiroshi Ohta, Miho Watanabe, Wataru Saito, Shigo Sato, Hiroyuki Sugaya and Masakazu Yamaguchi

21st International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2009年5月 

Influence of Electric Field upon Current Collapse Phenomena and Reliability in High Voltage GaN-HEMTs 国際会議

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito,Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno

22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2010年6月 

Reliability of GaN-HEMTs for high-voltage switching applications 招待 国際会議

Wataru Saito

2011 International Reliability Physics Symposium (IRPS)  2011年4月 

A turn-off switching test of high voltage GaN-HEMTs 国際会議

Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno and Toru Sugiyama

9th Topical Workshop on Heterostructure Microelectronics (TWHM)  2011年8月 

Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs 国際会議

Wataru Saito, Satoshi Aida, Shigeo Koduki and Masaru Izumisawa

23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2011年5月 

“Improvement of gate controllability for new generation superjunction MOSFETs: DTMOS-III series 国際会議

2011年5月 

DTMOS-IV: RDS(ON) innovation by deep trench filling superjunction technology 国際会議

Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera and Georges Tchouangue

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2012  2012年5月 

Switching controllability of high voltage GaN-HEMTs and the Cascode connection 国際会議

Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Toshiyuki Naka and Toru Sugiyama

24th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2012年6月 

Comparison of theoretical limits between superjunction and field plate structures 国際会議

Wataru Saito

25th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2013年5月 

Requirements to GaN-HEMT from high-power density operation of power electronics system 国際会議

Wataru Saito

10th Topical Workshop on Heterostructure Microelectronics (TWHM)  2013年8月 

Power Device Trends for High- Power density operation of power electronics system 国際会議

Wataru Saito

International Conference on Solid State Devices and Materials (SSDM) 2013  2013年9月 

An Ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes 国際会議

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai and W. Saito

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)  2013年11月 

Influence of carrier lifetime control process in superjunction MOSFET characteristics 国際会議

Wataru Saito, Shotaro Ono and Hiroaki Yamashita

26th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2014年6月 

Backside field plate effect on suppression of current collapse phenomena in high-voltage GaN-HEMTs 国際会議

Wataru Saito, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno

International Workshop on Nitride Semiconductors (IWN) 2014  2014年8月 

Low-resistive contact formation on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers 国際会議

Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi H. Iwai

International Workshop on Nitride Semiconductors (IWN) 2014  2014年8月 

Dependence of Ti/C ratio on ohmic contact with TiC electrode for AlGaN/GaN structure 国際会議

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, and H. Iwai and W. Saito

The 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)  2014年11月 

Theoretical loss analysis of power converters with 1200 V class Si-IGBT and SiC-MOSFET 国際会議

Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Wataru Saito

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2015  2015年5月 

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET 国際会議

Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015年5月 

Theoretical limits of superjunction considering with charge imbalance margin 国際会議

Wataru Saito

27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015年5月 

Temperature dependence of single-event burnout for super junction MOSFET 国際会議

Shunsuke Katoh, Eiji Shimada, Takayuki Yoshihira, Akihiro Oyama, Syotaro Ono, Hideyuki Ura, Gentaro Ookura, Wataru Saito, Yusuke Kawaguchi

27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2015年5月 

TCAD simulation of high voltage GaN-HEMTs 国際会議

Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi

11th Topical Workshop on Heterostructure Microelectronics (TWHM)  2015年8月 

Analysis of GaN-HEMT switching characteristics for high-power applications 国際会議

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch and Hans J?rgen Mattausch

International Conference on Solid State Devices and Materials (SSDM) 2015  2015年9月 

Investigation of breakdown characteristics in high-voltage GaN-HEMTs 国際会議

Takeshi Suwa, Wataru Saito, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi

International Conference on Solid State Devices and Materials (SSDM) 2015  2015年9月 

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning　spreading resistance microscopy (SSRM) for power device applications 国際会議

2015年10月 

Breakdown behaviour of high-voltage GaN-HEMTs 国際会議

W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2015年10月 

Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition 国際会議

K. Endo, S. Nagamine, W. Saito, T. Matsudai, T. Ogura, T. Setoya, K. Nakamae

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016年6月 

Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions 国際会議

T. Mizoguchi, T. Naka, Y. Tanimoto, Y. Okada, W. Saito, M. Miura-Mattausch and H. J. Mattausch

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016年6月 

UIS withstanding capability and mechanism of high voltage GaN-HEMTs 国際会議

T. Naka and W. Saito

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2016年6月 

UIS test of high-voltage GaN-HEMTs with p-type gate structure 国際会議

W. Saito and T. Naka

27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)  2016年9月 

Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT 国際会議

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

2016 International Electron Device Meeting (IEDM)  2016年12月 

Process design of superjunction MOSFETs for high drain current capability and low on-resistance 国際会議

Wataru Saito

29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2017年5月 

Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs 国際会議

Toshiyuki Naka and Wataru Saito

29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2017年5月 

Influence of Gate Characteristics upon UIS Withstanding Capability in High Voltage GaN-HEMTs 国際会議

Wataru Saito and Toshiyuki Naka

12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017)  2017年8月 

Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle 招待 国際会議

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

International Conference on Solid State Devices and Materials (SSDM) 2017  2017年9月 

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs 国際会議

Wataru Saito and Toshiyuki Naka

28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux (France)  2017年9月 

Enhancement of accumulation-mode operation in gate-connected superjunction MOSFET 国際会議

Wataru Saito

14th International Seminar on Power Semiconductors (ISPS)  2018年5月 

Low noise superjunction MOSFET with integrated snubber structure 国際会議

Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Masaru Izumisawa and Wataru Saito

30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2018年5月 

Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET 国際会議

Wataru Saito

30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  2018年8月 

学術論文等の審査

役割：査読

2023年

SSDM Award評価委員 国際学術貢献

2022年9月

Technical Program Committee 国際学術貢献

IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)  （ Warwick UnitedKingdom ） 2022年9月

Technical Program Committee 国際学術貢献

9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)  （ Nagoya Japan ） 2022年9月

Technical Program Committee 国際学術貢献

14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022  （ Hiroshima Japan ） 2022年8月 - 2022年9月

文部科学省委託「令和4年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

役割：審査・評価

2022年6月 - 2023年3月

Technical Program Committee 国際学術貢献

6th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2022  （ Oita Japan ） 2022年3月

学術論文等の審査

役割：査読

2022年

Technical Program Committee 国際学術貢献

IEEE International Electron Devices Meeting (IEDM)  （ San Francisco UnitedStatesofAmerica ） 2021年12月

Technical Program Committee 国際学術貢献

5th IEEE International Future Energy Electronics Conference  （ Online Taiwan ） 2021年11月

文部科学省委託「令和3年度革新的パワーエレクトロニクス創出基盤技術研究開発事業」/事業推進委員会委員

役割：審査・評価

2021年10月 - 2022年3月

International Program Committee 国際学術貢献

15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS (ISPS) 2021  （ Prague CzechRepublic ） 2021年8月

Organizing Committee 国際学術貢献

33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Online Japan ） 2021年5月 - 2021年6月

学術論文等の審査

役割：査読

2021年

Technical Program Committee 国際学術貢献

IEEE International Electron Devices Meeting (IEDM)  （ Online UnitedStatesofAmerica ） 2020年12月

Technical Program Committee 国際学術貢献

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2020  （ Kyoto Japan ） 2020年9月

Technical Program Committee 国際学術貢献

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Online Austria ） 2020年9月

Chair 国際学術貢献

ECPE Workshop Power Semiconductor Robustness - What Kills Power Devices?  （ Munich Germany ） 2020年1月

学術論文等の審査

役割：査読

2020年

IEEE Transactions on Electron Devices 国際学術貢献

2019年12月 - 2028年12月

Technical Program Committee 国際学術貢献

31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Shanghai China ） 2019年5月

学術論文等の審査

役割：査読

2019年

Technical Program Committee 国際学術貢献

30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Chicago UnitedStatesofAmerica ） 2018年5月

Steering Committee, Technical Program Committee 国際学術貢献

29th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Sapporo Japan ） 2017年5月 - 2017年6月

Technical Program Committee 国際学術貢献

28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Prague CzechRepublic ） 2016年6月

Steering Committee 国際学術貢献

25th International Symposium on Power Semiconductor Devices and ICs (ISPSD)  （ Kanazawa Japan ） 2013年5月

東芝インフラシステムズ学術奨励制度

2023年

東芝デバイス＆ストレージ学術奨励制度

2023年

東芝インフラシステムズ学術奨励制度

2022年

東芝デバイス＆ストレージ学術奨励制度

2022年

省エネエレクトロニクスの製造基盤強化に向けた技術開発事業「大口径インテリジェント・シリコンパワー半導体の開発」

2021年6月 - 2026年2月

国立研究開発法人新エネルギー・産業技術総合開発機構（NEDO） 

低炭素社会実現に向けた高耐量・高信頼なSiCパワーデバイスを用いた直流遮断器

2021年 - 2022年

日本学術振興会  二国間交流

東芝デバイス＆ストレージ学術奨励制度

2021年

東芝インフラシステムズ学術奨励制度

2021年

AIゲートドライブの最適駆動変数の決定方法に関する理論構築と実証

2020年12月 - 2022年9月

共同研究

パワーモジュール劣化モニタリングFS研究

2020年10月 - 2022年8月

共同研究

新世代Si-IGBT と応用基本技術の研究開発

2019年4月 - 2020年3月

高効率電気自動車に向けた理論限界を超える新規低耐圧パワーＭＯＳＦＥＴの構造と制御

研究課題/領域番号：1 9 K 2 3 5 1 8  2019年 - 2020年

日本学術振興会  科学研究費助成事業  研究活動スタート支援

異分野特別演習

2023年4月 - 2023年9月   前期

パワーデバイス工学基礎

2022年6月 - 2022年8月   夏学期

総合理工学修士実験

2022年4月 - 2023年3月   通年

総合理工学修士演習

2022年4月 - 2023年3月   通年

パワーデバイス工学演習

2021年10月 - 2022年3月   後期

パワーデバイス工学基礎

2021年6月 - 2021年8月   夏学期

パワーデバイス工学実験

2021年4月 - 2022年3月   通年

パワーデバイス工学

2020年10月 - 2021年3月   後期

パワーデバイス工学演習

2020年10月 - 2021年3月   後期

パワーデバイス工学実験

2020年4月 - 2021年3月   通年

パワーデバイス工学基礎

2024年6月 - 2024年8月   夏学期

2019年  東京大学生産技術研究所　リサーチフェロー  国内外の区分:国内