Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth Invited Reviewed International journal

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue feng Han, Satoshi Nakano, Shinichi Nishizawa, Koichi Kakimoto

Journal of Crystal Growth   499   8 - 12   2018.10

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation Invited Reviewed International journal

Ishikawa, Yoichiro; Tajima, Michio; Kiuchi, Hirotatsu; Ogura, Atsushi; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi

JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 8 )   2018.8

Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification Invited Reviewed International journal

Ide, Tomoro; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi

CRYSTALS   8 ( 6 )   2018.6

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth Invited Reviewed International journal

Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi

CRYSTAL RESEARCH AND TECHNOLOGY   53 ( 5 )   2018.5

Effect of oxygen on dislocation multiplication in silicon crystals Invited Reviewed International journal

Fukushima, Wataru; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi

JOURNAL OF CRYSTAL GROWTH   486   45 - 49   2018.3

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon Invited Reviewed International journal

Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi

JOURNAL OF CRYSTAL GROWTH   483   269 - 274   2018.2

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations Invited Reviewed International journal

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   474   121 - 129   2017.9

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells Invited Reviewed International journal

Nakano, S.; Gao, B.; Jiptner, K.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Fukuzawa, M.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   474   130 - 134   2017.9

Silicon bulk growth for solar cells: Science and technology Invited Reviewed International journal

Kakimoto, Koichi; Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 2 )   2017.2

Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation Invited Reviewed International journal

Jiptner, Karolin; Miyamura, Yoshiji; Harada, Hirofumi; Gao, Bing; Kakimoto, Koichi; Sekiguchi, Takashi

PROGRESS IN PHOTOVOLTAICS   24 ( 12 )   1513 - 1522   2016.12

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique Reviewed International journal

Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada

Solid State Phenomena   242   35 - 40   2015.10

Orientation Dependency of Dislocation Generation in Si Growth Process Reviewed International journal

Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Solid State Phenomena   242   15 - 20   2015.10

50 cm Size Seed Cast Si Ingot Growth and its Characterization Reviewed International journal

T. Sekiguchi, Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, K. Kakimoto

Solid State Phenomena   242   30 - 34   2015.10

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Effi ciency and Low-Cost Solar Cells Invited Reviewed International journal

Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi

ENGINEERING   1 ( 3 )   378 - 383   2015.9

Control of extended defects in cast and seed cast Si ingots for photovoltaic application Reviewed International journal

T. Sekiguchi, K. Jiptner, Ronit R. Prakash, J. Chen, Y. Miyamura, H. Harada, S. Nakano, B. Gao, and K. Kakimoto

Phys. Status Solidi   C12 ( 8 )   1094 - 1198   2015.6

Control of extended defects in cast multicrystalline silicon using polycrystalline template Invited Reviewed International journal

R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada, T. Sekiguchi

Phys. Status Solidi   C12 ( 8 )   1099 - 1102   2015.4

Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon Invited Reviewed International journal

Gao, B.; Jiptner, K.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   411   49 - 55   2015.2

Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds Reviewed International journal

R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada and T. Sekiguchi

Applied Physics Express   8 ( 3 )   035502   2015.2

Thermal stress induced dislocation distribution in directional solidification of Si for PV application Invited Reviewed International journal

Jiptner, Karolin; Gao, Bing; Harada, Hirofumi; Miyamura, Yoshiji; Fukuzawa, Masayuki; Kakimoto, Koichi; Sekiguchi, Takashi

JOURNAL OF CRYSTAL GROWTH   408   19 - 24   2014.12

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization Invited Reviewed International journal

Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Nakano, S.; Gao, B.; Kakimoto, K.; Sekiguchi, T.

JOURNAL OF CRYSTAL GROWTH   401   133 - 136   2014.9

Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal Invited Reviewed International journal

R. R. Prakash, T. Sekiguchi, K. Jiptner, Y. Miyamura, J. Chen, H. Harada, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   401   717 - 719   2014.9

Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application Reviewed International journal

Y. Miyamura, T. Sekiguchi, J. Chen, J.Y. Li, K. Watanabe, K. Kumagai, A. Ogura

ACTA PHYSICA POLONICA A   125   991   2014.4

Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots Reviewed International journal

26. Y. Miyamura, J. Chen, R.R. Prakash, K. Jiptner, H. Harada, T. Sekiguchi

ACTA PHYSICA POLONICA A   125   1024   2014.4

10 cm diameter mono cast Si growth and its characterization Invited Reviewed International journal

Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Li, J. Y.; Sekiguchi, T.; Kojima, T.; Ohshita, Y.; Ogura, A.; Fukuzawa, M.; Nakano, S.; Gao, B.; Kakimoto, K.

Solid State Phenomena   205-206   89 - 93   2013.10

Analysis of inhomogeneous dislocation distribution in multicrystalline Si Reviewed International journal

J. Chen, R. R. Prakash, J. Y. Li, K. Jiptner, Y. Miyamura, H. Harada, A. Ogura and T. Sekiguchi

Solid State Phenomena   205-206   77 - 82   2013.10

Characterization of residual strain in Si ingots grown by the seed-cast method Reviewed International journal

K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto and T. Sekiguchi

Solid State Phenomena   205-206   94 - 99   2013.10

Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells Invited Reviewed International journal

Li, Jianyong; Prakash, Ronit Roneel; Jiptner, Karolin; Chen, Jun; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi; Ogura, Atsushi; Sekiguchi, Takashi

JOURNAL OF CRYSTAL GROWTH   377   37 - 42   2013.8

Effect of Cooling Rate on the Activation of Slip Systems in Seed Cast-Grown Monocrystalline Silicon in the [001] and [111] Directions Invited Reviewed International journal

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.

CRYSTAL GROWTH & DESIGN   13 ( 6 )   2661 - 2669   2013.6

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process Invited Reviewed International journal

Inoue, Makoto; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Gao, Bing; Kangawa, Yoshihiro; Kakimoto, Koichi

INTERNATIONAL JOURNAL OF PHOTOENERGY   2013.6

Effect of crystallinity on residual strain distribution in cast-grown Si Reviewed International journal

K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, T. Sekiguchi

Jpn. J. Appl. Phys.   52   065501   2013.5

Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique Invited Reviewed International journal

Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi

CRYSTAL GROWTH & DESIGN   12 ( 12 )   6144 - 6150   2012.12

Evaluation of residual strain in directional solidified mono-Si ingots Invited Reviewed International journal

Jiptner, Karolin; Fukuzawa, Masayuki; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi; Sekiguchi, Takashi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 1   10 ( 1 )   141 - 145   2012.11

Anisotropic Thermal Stress Simulation with Complex Crystal-Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon Invited Reviewed International journal

Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi

CRYSTAL GROWTH & DESIGN   12 ( 11 )   5708 - 5714   2012.11

Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace Invited Reviewed International journal

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   47 - 52   2012.8

Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique Invited Reviewed International journal

Tachibana, T.; Sameshima, T.; Kojima, T.; Arafune, K.; Kakimoto, K.; Miyamura, Y.; Harada, H.; Sekiguchi, T.; Ohshita, Y.; Ogura, A.

Mater Sci Forum   725   133 - 136   2012.7

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si Reviewed International journal

Y. Miyamura, H. Harada, S. Ito, J. Chen, T. Sekiguchi

Mater Sci Forum   725   157 - 160   2012.7

Effect of Si3N4 Coating on Strain and Fracture of Si Ingots Reviewed International journal

K. Jiptner, H. Harada, Y. Miyamura, M. Fukuzawa, T. Sekiguchi

Mater Sci Forum   725   247 - 250   2012.7

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells Invited Reviewed International journal

Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

JOURNAL OF APPLIED PHYSICS   111 ( 7 )   074505   2012.4

Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer Invited Reviewed International journal

Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

JOURNAL OF APPLIED PHYSICS   51 ( 2 )   2012.2

Analytical Model for Epitaxial Growth of SiGe from SiH4 and GeH4 in Reduced-Pressure Chemical Vapor Deposition Invited Reviewed International journal

Imai, Masato; Miyamura, Yoshiji; Murata, Daisuke; Kanda, Takahiro

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 12 )   8733 - 8738   2008.12

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process Invited Reviewed International journal

Tezuka, Tsutomu; Moriyama, Yoshihiko; Nakaharai, Shu; Sugiyama, Naoharu; Hirashita, Norio; Toyoda, Eiji; Miyamura, Yoshiji; Takagi, Shin-ichi

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST   508 ( 1-2 )   251 - 255   2006.6

Performance enhancement of partially and fully depleted strained-SOI MOSFETs Invited Reviewed International journal

Numata, T; Irisawa, T; Tezuka, T; Koga, J; Hirashita, N; Usuda, K; Toyoda, E; Miyamura, Y; Tanabe, A; Sugiyama, N; Takagi, S

IEEE TRANSACTIONS ON ELECTRON DEVICES   53 ( 5 )   1030 - 1038   2006.5

Characterization of SiGe layer on insulator by in-plane diffraction method Invited Reviewed International journal

Imai, M; Miyamura, Y; Murata, D; Ogi, A

Solid State Phenomena   108-109   451 - 456   2005.12

Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen Invited Reviewed International journal

Saito, M; Jablonski, J; Katayama, T; Miyamura, Y; Ikegaya, K; Imai, M

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   35 ( 3B )   L359 - L361   1996.3

Effect of Fe impurities on the generation of process-induced microdefects in Czochralski silicon crystals Invited Reviewed International journal

Jablonski, J; Saito, M; Miyamura, Y; Imai, M

1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS   35 ( 2A )   520 - 525   1996.2

Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers Invited Reviewed International journal

Nakashima, S; Katayama, T; Miyamura, Y; Matsuzaki, A; Kataoka, M; Ebi, D; Imai, M; Izumi, K; Ohwada, N

JOURNAL OF THE ELECTROCHEMICAL SOCIETY   143 ( 1 )   244 - 251   1996.1

GETTERING OF CU AND NI IMPURITIES IN SIMOX WAFERS Invited Reviewed International journal

JABLONSKI, J; MIYAMURA, Y; IMAI, M; TSUYA, H

JOURNAL OF THE ELECTROCHEMICAL SOCIETY   142 ( 6 )   2059 - 2066   1995.6

TEMPERATURE-DEPENDENT ELECTRON-BEAM INDUCED CURRENT STUDY OF DEFECTS IN SILICON Invited Reviewed International journal

SEKIGUCHI, T; KUSANAGI, S; MIYAMURA, Y; SUMINO, K

ACTA PHYSICA POLONICA A   83 ( 1 )   71 - 79   1993.1