Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth 招待 査読 国際誌

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue feng Han, Satoshi Nakano, Shinichi Nishizawa, Koichi Kakimoto

Journal of Crystal Growth   499   8 - 12   2018年10月

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation 招待 査読 国際誌

Ishikawa, Yoichiro; Tajima, Michio; Kiuchi, Hirotatsu; Ogura, Atsushi; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi

JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 8 )   2018年8月

Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification 招待 査読 国際誌

Ide, Tomoro; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi

CRYSTALS   8 ( 6 )   2018年6月

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth 招待 査読 国際誌

Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi

CRYSTAL RESEARCH AND TECHNOLOGY   53 ( 5 )   2018年5月

Effect of oxygen on dislocation multiplication in silicon crystals 招待 査読 国際誌

Fukushima, Wataru; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi

JOURNAL OF CRYSTAL GROWTH   486   45 - 49   2018年3月

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon 招待 査読 国際誌

Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi

JOURNAL OF CRYSTAL GROWTH   483   269 - 274   2018年2月

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations 招待 査読 国際誌

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   474   121 - 129   2017年9月

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells 招待 査読 国際誌

Nakano, S.; Gao, B.; Jiptner, K.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Fukuzawa, M.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   474   130 - 134   2017年9月

Silicon bulk growth for solar cells: Science and technology 招待 査読 国際誌

Kakimoto, Koichi; Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 2 )   2017年2月

Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation 招待 査読 国際誌

Jiptner, Karolin; Miyamura, Yoshiji; Harada, Hirofumi; Gao, Bing; Kakimoto, Koichi; Sekiguchi, Takashi

PROGRESS IN PHOTOVOLTAICS   24 ( 12 )   1513 - 1522   2016年12月

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique 査読 国際誌

Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada

Solid State Phenomena   242   35 - 40   2015年10月

Orientation Dependency of Dislocation Generation in Si Growth Process 査読 国際誌

Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Solid State Phenomena   242   15 - 20   2015年10月

50 cm Size Seed Cast Si Ingot Growth and its Characterization 査読 国際誌

T. Sekiguchi, Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, K. Kakimoto

Solid State Phenomena   242   30 - 34   2015年10月

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Effi ciency and Low-Cost Solar Cells 招待 査読 国際誌

Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi

ENGINEERING   1 ( 3 )   378 - 383   2015年9月

Control of extended defects in cast and seed cast Si ingots for photovoltaic application 査読 国際誌

T. Sekiguchi, K. Jiptner, Ronit R. Prakash, J. Chen, Y. Miyamura, H. Harada, S. Nakano, B. Gao, and K. Kakimoto

Phys. Status Solidi   C12 ( 8 )   1094 - 1198   2015年6月

Control of extended defects in cast multicrystalline silicon using polycrystalline template 招待 査読 国際誌

R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada, T. Sekiguchi

Phys. Status Solidi   C12 ( 8 )   1099 - 1102   2015年4月

Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon 招待 査読 国際誌

Gao, B.; Jiptner, K.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   411   49 - 55   2015年2月

Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds 査読 国際誌

R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada and T. Sekiguchi

Applied Physics Express   8 ( 3 )   035502   2015年2月

Thermal stress induced dislocation distribution in directional solidification of Si for PV application 招待 査読 国際誌

Jiptner, Karolin; Gao, Bing; Harada, Hirofumi; Miyamura, Yoshiji; Fukuzawa, Masayuki; Kakimoto, Koichi; Sekiguchi, Takashi

JOURNAL OF CRYSTAL GROWTH   408   19 - 24   2014年12月

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization 招待 査読 国際誌

Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Nakano, S.; Gao, B.; Kakimoto, K.; Sekiguchi, T.

JOURNAL OF CRYSTAL GROWTH   401   133 - 136   2014年9月

Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal 招待 査読 国際誌

R. R. Prakash, T. Sekiguchi, K. Jiptner, Y. Miyamura, J. Chen, H. Harada, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   401   717 - 719   2014年9月

Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application 査読 国際誌

Y. Miyamura, T. Sekiguchi, J. Chen, J.Y. Li, K. Watanabe, K. Kumagai, A. Ogura

ACTA PHYSICA POLONICA A   125   991   2014年4月

Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots 査読 国際誌

26. Y. Miyamura, J. Chen, R.R. Prakash, K. Jiptner, H. Harada, T. Sekiguchi

ACTA PHYSICA POLONICA A   125   1024   2014年4月

10 cm diameter mono cast Si growth and its characterization 招待 査読 国際誌

Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Li, J. Y.; Sekiguchi, T.; Kojima, T.; Ohshita, Y.; Ogura, A.; Fukuzawa, M.; Nakano, S.; Gao, B.; Kakimoto, K.

Solid State Phenomena   205-206   89 - 93   2013年10月

Analysis of inhomogeneous dislocation distribution in multicrystalline Si 査読 国際誌

J. Chen, R. R. Prakash, J. Y. Li, K. Jiptner, Y. Miyamura, H. Harada, A. Ogura and T. Sekiguchi

Solid State Phenomena   205-206   77 - 82   2013年10月

Characterization of residual strain in Si ingots grown by the seed-cast method 査読 国際誌

K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto and T. Sekiguchi

Solid State Phenomena   205-206   94 - 99   2013年10月

Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells 招待 査読 国際誌

Li, Jianyong; Prakash, Ronit Roneel; Jiptner, Karolin; Chen, Jun; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi; Ogura, Atsushi; Sekiguchi, Takashi

JOURNAL OF CRYSTAL GROWTH   377   37 - 42   2013年8月

Effect of Cooling Rate on the Activation of Slip Systems in Seed Cast-Grown Monocrystalline Silicon in the [001] and [111] Directions 招待 査読 国際誌

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.

CRYSTAL GROWTH & DESIGN   13 ( 6 )   2661 - 2669   2013年6月

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process 招待 査読 国際誌

Inoue, Makoto; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Gao, Bing; Kangawa, Yoshihiro; Kakimoto, Koichi

INTERNATIONAL JOURNAL OF PHOTOENERGY   2013年6月

Effect of crystallinity on residual strain distribution in cast-grown Si 査読 国際誌

K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, T. Sekiguchi

Jpn. J. Appl. Phys.   52   065501   2013年5月

Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique 招待 査読 国際誌

Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi

CRYSTAL GROWTH & DESIGN   12 ( 12 )   6144 - 6150   2012年12月

Evaluation of residual strain in directional solidified mono-Si ingots 招待 査読 国際誌

Jiptner, Karolin; Fukuzawa, Masayuki; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi; Sekiguchi, Takashi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 1   10 ( 1 )   141 - 145   2012年11月

Anisotropic Thermal Stress Simulation with Complex Crystal-Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon 招待 査読 国際誌

Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi

CRYSTAL GROWTH & DESIGN   12 ( 11 )   5708 - 5714   2012年11月

Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace 招待 査読 国際誌

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.

JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   47 - 52   2012年8月

Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique 招待 査読 国際誌

Tachibana, T.; Sameshima, T.; Kojima, T.; Arafune, K.; Kakimoto, K.; Miyamura, Y.; Harada, H.; Sekiguchi, T.; Ohshita, Y.; Ogura, A.

Mater Sci Forum   725   133 - 136   2012年7月

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si 査読 国際誌

Y. Miyamura, H. Harada, S. Ito, J. Chen, T. Sekiguchi

Mater Sci Forum   725   157 - 160   2012年7月

Effect of Si3N4 Coating on Strain and Fracture of Si Ingots 査読 国際誌

K. Jiptner, H. Harada, Y. Miyamura, M. Fukuzawa, T. Sekiguchi

Mater Sci Forum   725   247 - 250   2012年7月

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells 招待 査読 国際誌

Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

JOURNAL OF APPLIED PHYSICS   111 ( 7 )   074505   2012年4月

Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer 招待 査読 国際誌

Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

JOURNAL OF APPLIED PHYSICS   51 ( 2 )   2012年2月

Analytical Model for Epitaxial Growth of SiGe from SiH4 and GeH4 in Reduced-Pressure Chemical Vapor Deposition 招待 査読 国際誌

Imai, Masato; Miyamura, Yoshiji; Murata, Daisuke; Kanda, Takahiro

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 12 )   8733 - 8738   2008年12月

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process 招待 査読 国際誌

Tezuka, Tsutomu; Moriyama, Yoshihiko; Nakaharai, Shu; Sugiyama, Naoharu; Hirashita, Norio; Toyoda, Eiji; Miyamura, Yoshiji; Takagi, Shin-ichi

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST   508 ( 1-2 )   251 - 255   2006年6月

Performance enhancement of partially and fully depleted strained-SOI MOSFETs 招待 査読 国際誌

Numata, T; Irisawa, T; Tezuka, T; Koga, J; Hirashita, N; Usuda, K; Toyoda, E; Miyamura, Y; Tanabe, A; Sugiyama, N; Takagi, S

IEEE TRANSACTIONS ON ELECTRON DEVICES   53 ( 5 )   1030 - 1038   2006年5月

Characterization of SiGe layer on insulator by in-plane diffraction method 招待 査読 国際誌

Imai, M; Miyamura, Y; Murata, D; Ogi, A

Solid State Phenomena   108-109   451 - 456   2005年12月

Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen 招待 査読 国際誌

Saito, M; Jablonski, J; Katayama, T; Miyamura, Y; Ikegaya, K; Imai, M

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   35 ( 3B )   L359 - L361   1996年3月

Effect of Fe impurities on the generation of process-induced microdefects in Czochralski silicon crystals 招待 査読 国際誌

Jablonski, J; Saito, M; Miyamura, Y; Imai, M

1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS   35 ( 2A )   520 - 525   1996年2月

Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers 招待 査読 国際誌

Nakashima, S; Katayama, T; Miyamura, Y; Matsuzaki, A; Kataoka, M; Ebi, D; Imai, M; Izumi, K; Ohwada, N

JOURNAL OF THE ELECTROCHEMICAL SOCIETY   143 ( 1 )   244 - 251   1996年1月

GETTERING OF CU AND NI IMPURITIES IN SIMOX WAFERS 招待 査読 国際誌

JABLONSKI, J; MIYAMURA, Y; IMAI, M; TSUYA, H

JOURNAL OF THE ELECTROCHEMICAL SOCIETY   142 ( 6 )   2059 - 2066   1995年6月

TEMPERATURE-DEPENDENT ELECTRON-BEAM INDUCED CURRENT STUDY OF DEFECTS IN SILICON 招待 査読 国際誌

SEKIGUCHI, T; KUSANAGI, S; MIYAMURA, Y; SUMINO, K

ACTA PHYSICA POLONICA A   83 ( 1 )   71 - 79   1993年1月