| 1. |
L. Huang, H. Ikematsu, Y. Kato, K. Teii, Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma Enhanced Chemical Vapor Deposition, IEEE Trans. Plasma Sci., to be published. |
| 2. |
L. Huang, X. Wu, R. Hijiya, K. Teii, Control of Electrostatic Self-Assembly Seeding of Diamond Nanoparticles on Carbon Nanowalls, Nanotechnology, Vol. 33, 105605, 2022.04. |
| 3. |
L. Huang, S. Harajiri, S. Wang, X. Wu, K. Teii, Enhanced Field Emission from Ultrananocrystalline Diamond-Decorated Carbon Nanowalls Prepared by a Self-Assembly Seeding Technique, ACS Appl. Mater. Interfaces, Vol. 14, pp. 4389−4398, 2022.01. |
| 4. |
Y. Kuboki, H. Zhu, M. Sakamoto, H. Matsumoto, K. Teii, Y. Kato, Low Temperature Annealing of Nanocrystalline Si Paste for pn Junction Formation, Mater. Sci. Semicond. Process., Vol. 135, 106093, 2021.07. |
| 5. |
J. H. C. Yang, K. Teii, C.-C. Chang, S. Matsumoto, M. Rafailovich, Biocompatible Cubic Boron Nitride: A Noncytotoxic Ultrahard Material, Adv. Funct. Mater., Vo. 31, 2005066, 2021.01. |
| 6. |
T.-L. Sung, C.-M. Liu, S. Ono, S. Teii, K. Teii , K. Ebihara, Ozone Behavior on Catalytic Probes and Its Application Studied in Gas Flow Downstream of Dielectric Barrier Discharge Ozonizers, IEEE Trans. Plasma Sci., Vol. 49, pp. 182-186, 2021.01. |
| 7. |
Y. Kamimura, M. Torigoe, K. Teii, S. Matsumoto, Electrical Insulation Characteristics of Metal-Insulator-Metal Structures Using Boron Nitride Dielectric Films Deposited with Low-Energy Ion Impact, Mater. Sci. Semicond. Process., Vol. 121, 105353, 2021.01. |
| 8. |
H. Zhu, M. Sakamoto, T. Pan, T. Fujisaki, H. Matsumoto, K. Teii, Y. Kato, Rapid Thermal Annealing of Si Paste Film and pn-Junction Formation, Nanotechnology, Vol. 31, 385202, 2020.09. |
| 9. |
Y. Kamimura, T. Matsuura, K. Teii, S. Matsumoto, Effect of the Boron-to-Nitrogen Ratio on Leakage Current Characteristics of Boron Nitride Films Prepared by Surface-Wave Plasma Enhanced Chemical Vapor Deposition, Thin Solid Films, Vol. 706, 138029, 2020.07. |
| 10. |
Y. Kaneko, K. Terada, K. Teii, Field Emission Characteristics of Metal Nanoparticle-Coated Carbon Nanowalls, Nanotechnology, Vol. 31, 165203, 2020.04. |
| 11. |
Y. Kaneko, K. Terada, K. Teii, Enhanced Field Emission from Metal-Coated Carbon Nanowalls, Jpn. J. Appl. Phys., Vol. 58, 118002, 2019.10. |
| 12. |
T. Nakakuma, K. Teii, S. Matsumoto, Lowering of the Substrate Bias Voltage for Deposition of Cubic Boron Nitride in Microwave Plasma, IEEE Trans. Plasma Sci., Vol. 47, pp. 1205-1209, 2019.02. |
| 13. |
M. Torigoe, Y. Kamimura, K. Teii, S. Matsumoto, Effect of Low-Energy Ion Impact on the Structure of Hexagonal Boron Nitride Films Studied in Surface-Wave Plasma, Surf. Interface Anal., Vol. 51, pp. 126-130, 2019.01. |
| 14. |
K. Ota, Y. Kato, K. Teii, Formation of Nanocrystalline Diamond Cones by Reactive Ion Etching in Microwave Plasma for Enhancing Field Emission, Jpn. J. Appl. Phys., Vol. 58, 016003, 2019.01. |
| 15. |
K. Ota, Y. Kaneko, K. Terada, Y. Kato, K. Teii, Field Emission Characteristics of Metal-Coated Nanocrystalline Diamond Films, ECS J. Solid State Sci. Technol., Vol. 7, pp. 369-373, 2018.07. |
| 16. |
K. Teii, S. Kawamoto, S. Fukui, S. Matsumoto, Electrical Transport and Capacitance Characteristics of Metal-Insulator-Metal Structures using Hexagonal and Cubic Boron Nitride Films as Dielectrics, J. Appl. Phys., Vol. 123, 145701, 2018.04. |
| 17. |
S. Kawamoto, T. Nakakuma, K. Teii, S. Matsumoto, Leakage Current Characteristics of Thick Cubic Boron Nitride Films Deposited on Titanium, J. Appl. Phys., Vol. 122, 225108, 2017.12. |
| 18. |
N. Shimoda, Y. Kato, K. Teii, Electrical Contacts to Nanocrystalline Diamond Films Studied at High Temperatures, J. Appl. Phys., Vol. 120, 235706, 2016.12. |
| 19. |
M. Torigoe, K. Teii, S. Matsumoto, Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma, IEEE Trans. Plasma Sci., Vol. 44, pp. 3219-3222, 2016.12. |
| 20. |
K. Teii, S. Kawakami, S. Matsumoto, Superhydrophilic Cubic Boron Nitride Films, RSC Adv., Vol. 6, pp. 87905-87909, 2016.09. |
| 21. |
K. Teii, Y. Mizusako, T. Hori, S. Matsumoto, Thermal Stability of Boron Nitride/Silicon p-n Heterojunction Diodes, J. Appl. Phys., Vol. 118, 155102, 2015.10. |
| 22. |
K. Teii, H. Ito, N. Katayama, S. Matsumoto, Effect of the Hexagonal Phase Interlayer on Rectification Properties of Boron Nitride Heterojunctions to Silicon, J. Appl. Phys., Vol. 117, 055710, 2015.02. |
| 23. |
K. Teii, S. Matsumoto, Impact of Low-Energy Ions on Plasma Deposition of Cubic Boron Nitride, Thin Solid Films, Vol. 576, pp. 50-54, 2015.02. |
| 24. |
R.-C. Hsiao, T.-L. Sung, C.-M. Liu, S. Teii, S. Ono, K. Teii, K. Ebihara, Numerical Study on Heat Flow during Catalytic Dissociation of Ozone in a Dielectric Barrier Discharge Ozonizer, IEEE Trans. Plasma Sci., Vol. 43, pp. 665-669, 2015.02. |
| 25. |
K. Teii, Plasma Deposition of Diamond at Low Pressures: A Review, IEEE Trans. Plasma Sci., Vol. 42, pp. 3862-3869, 2014.12. |
| 26. |
T.-L. Sung, R.-C. Hsiao, C.-M. Liu, S. Teii, H.-P. Jhou, K. Teii, S. Ono, K. Ebihara, F. Mitsugi, Direct Measurement of Metal Surface Temperature during Catalytic Dissociation of Ozone for Sensor Application, IEEE Trans. Plasma Sci., Vol. 42, pp. 3842-3846, 2014.12. |
| 27. |
R.-C. Hsiao, T.-L. Sung, C.-M. Liu, S. Teii, T.-C. Chan, S. Ono, K. Teii, C.-C. Yang, S.-C. Zeng, Hydrophilic Stability of Plastic Surfaces Treated in Low- and Atmospheric-Pressure Radio-Frequency Plasmas, IEEE Trans. Plasma Sci., Vo. 42, pp. 3837-3841, 2014.12. |
| 28. |
T.-L. Sung, S. Matsumura, K. Teii, S. Teii, Self-Compensated Standing Wave Probe for Characterization of Radio-Frequency Plasmas, Rev. Sci. Instrum., Vol. 85, 063507, 2014.06. |
| 29. |
J. H.C. Yang, S. Kawakami, K. Teii, S. Matsumoto, Enhanced Wettability of Cubic Boron Nitride Films by Plasma Treatment, Mater. Sci. Forum, Vol. 783-786, pp. 2051-2055, 2014.05. |
| 30. |
M. Goto, R. Amano, N. Shimoda, Y. Kato, K. Teii, Rectification Properties of n-Type Nanocrystalline Diamond Heterojunctions to p-Type Silicon Carbide at High Temperatures, Appl. Phys. Lett., Vol. 104, 153113, 2014.04. |
| 31. |
R.-C. Hsiao, T.-L. Sung, C.-M. Liu, H.-T. Tseng, S. Teii, K. Teii, S. Ono, K. Ebihara, Surface-Enhanced Ozone Dissociation in Gas Flow Downstream of a Dielectric Barrier Discharge Ozonizer Studied by Using Catalytic Probes, Vacuum, Vol. 101, pp. 345-349, 2014.04. |
| 32. |
K. Teii, T. Ikeda, Rectification Properties of Nanocrystalline Diamond/Silicon p-n Heterojunction Diodes, J. Appl. Phys., Vol. 114, 093705, 2013.09. |
| 33. |
K. Teii, T. Hori, Y. Mizusako, S. Matsumoto, Origin of Rectification in Boron Nitride Heterojunctions to Silicon, ACS Appl. Mater. Interfaces, Vol. 5, pp. 2535-2539, 2013.04. |
| 34. |
T.-L. Sung, S. Teii, C.-M. Liu, R.-C. Hsiao, P.-C. Chen, Y.-H. Wu, C.-K. Yang, K. Teii, S. Ono, K. Ebihara, Effect of Pulse Power Characteristics and Gas Flow Rate on Ozone Production in a Cylindrical Dielectric Barrier Discharge Ozonizer, Vacuum, Vol. 90, pp. 65-69, 2013.04. |
| 35. |
K. Teii, S. Matsumoto, Direct Deposition of Cubic Boron Nitride Films on Tungsten Carbide-Cobalt, ACS Appl. Mater. Interfaces, Vol. 4, pp. 5249-5255, 2012.10. |
| 36. |
T.-L. Sung, S. Teii, C.-M. Liu, R.-C. Hsiao, P.-C. Chen, Y.-H. Wu, C.-K. Yang, S. Ono, K. Ebihara, K. Teii, Surface Catalytic Effect of Electrode Materials on Ozone Dissociation in a Cylindrical Dielectric Barrier Discharge Ozonizer, IEEE Trans. Plasma Sci., Vol. 40, pp. 2751-2755, 2012.10. |
| 37. |
J. H.C. Yang and K. Teii, Mechanisim of Enhanced Wettability of Nanocrystalline Diamond Films by Plasma Treatment, Thin Solid Films, Vol. 520, pp. 6566-6570, 2012.08. |
| 38. |
T.-L. Sung, J. H.-C. Yang, K. Teii, S. Teii, C.-M. Liu, W.-Y. Tseng, L.-D. Lin, S. Ono, Wettability of Amorphous Diamond-Like Carbons Deposited on Si and PMMA in Pulse-Modulated Plasmas, IEEE Trans. Plasma Sci., Vol. 40, pp. 1837-1842, 2012.07. |
| 39. |
C. Y. Cheng and K. Teii, Control of the Growth Regimes of Nanodiamond and Nanographite in Microwave Plasmas, IEEE Trans. Plasma Sci., Vol. 40, pp. 1783-1788, 2012.07. |
| 40. |
C. Y. Cheng, M. Nakashima, K. Teii, Low Threshold Field Emission from Nanocrystalline Diamond/Carbon Nanowall Composite Films, Diamond Relat. Mater., Vol. 27-28, pp. 40-44, 2012.07. |
| 41. |
K. Teii, S. Matsumoto, Low Threshold Field Emission from High-Quality Cubic Boron Nitride Films, J. Appl. Phys., Vol. 111, 093728, 2012.05. |
| 42. |
R. Amano, M. Goto, Y. Kato, K. Teii, Fabrication of 4H-SiC/Nanocrystalline Diamond pn Junctions, Mater. Sci. Forum, Vol. 717-720, pp. 1009-1012, 2012.05. |
| 43. |
J. H.C. Yang and K. Teii, Wettability of Plasma-Treated Nanocrystalline Diamond Films, Diamond Relat. Mater., Vol. 24, pp. 54-58, 2012.04. |
| 44. |
Y. Kato, M. Goto, R. Sato, K. Yamada, A. Koga, K. Teii, C. Srey, S. Tanaka, Formation of Epitaxial 3C-SiC Layers by Microwave Plasma-Assisted Carbonization, Surf. Coat. Technol., Vol. 206, pp. 990-993, 2011.11. |
| 45. |
T.-L. Sung, Y.-A. Chao, C.-M. Liu, K. Teii, S. Teii, C.-Y. Hsu, Deposition of Amorphous Hydrogenated Carbon Films on Si and PMMA by Pulsed Direct-Current Plasma CVD, Thin Solid Films, Vol. 519, pp. 6688-6692, 2011.08. |
| 46. |
M. Goto, A. Koga, K. Yamada, Y. Kato, K. Teii, Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions, Mater. Sci. Forum, Vol. 679-680, pp. 524-527, 2011.03. |
| 47. |
A. Koga, K. Teii, M. Goto, K. Yamada, Y. Kato, Growth and Electrical Properties of 3C-SiC/Nanocrystalline Diamond Layered Films, Jpn. J. Appl. Phys., Vol. 50, 01AB08, 2011.01. |
| 48. |
K. Teii, T. Hori, S. Matsumoto, Enhanced Deposition of Cubic Boron Nitride Films on Roughened Silicon and Tungsten Carbide-Cobalt Surfaces, Thin Solid Films, Vol. 519, pp. 1817-1820, 2011.01. |
| 49. |
K. Teii and S. Matsumoto, Feasibility Study on Cubic Boron Nitride Coated Glass Press Molds, Diamond Relat. Mater., Vol. 19, pp. 1415-1418, 2010.11. |
| 50. |
S. Shimada, K. Teii, M. Nakashima, Low Threshold Field Emission from Nitrogen-Incorporated Carbon Nanowalls, Diamond Relat. Mater., Vol. 19, pp. 956-959, 2010.07. |
| 51. |
K. Teii and M. Nakashima, Synthesis and Field Emission Properties of Nanocrystalline Diamond/Carbon Nanowall Composite Films, Appl. Phys. Lett., Vol. 96, 023112, 2010.01. |
| 52. |
K. Teii, R. Yamao, S. Matsumoto, Effect of Cubic Phase Evolution on Field Emission Properties of Boron Nitride Island Films, J. Appl. Phys., Vol. 106, 113706, 2009.12. |
| 53. |
K. Teii, S. Shimada, M. Nakashima, A. T. H. Chuang, Synthesis and Electrical Characterization of n-Type Carbon Nanowalls, J. Appl. Phys., Vol. 106, 084303, 2009.10. |
| 54. |
C.-M. Liu, K. Teii, T.-L. Sung, K. Ting, S. Teii, Role of Hydrogen in Ultrananocrystalline Diamond Deposition from Argon-Rich Microwave Plasmas, IEEE Trans. Plasma Sci., Vol. 37, pp. 1172-1177, 2009.07. |
| 55. |
T. Ikeda and K. Teii, Origin of Low Threshold Field Emission from Nitrogen-Incorporated Nanocrystalline Diamond Films, Appl. Phys. Lett., Vol. 94, 143102, 2009.04. |
| 56. |
T. Ikeda and K. Teii, Origin of Reverse Leakage Current in n-Type Nanocrystalline Diamond/p-Type Silicon Heterojunction Diodes, Appl. Phys. Lett., Vol. 94, 072104, 2009.02. |
| 57. |
T. Ikeda, K. Teii, C. Casiraghi, J. Robertson, A. C. Ferrari, Effect of the Sp2 Carbon Phase on n-Type Conduction in Nanodiamond Films, J. Appl. Phys., Vol. 104, 073720, 2008.10. |
| 58. |
K. Teii, S. Matsumoto, J. Robertson, Electron Field Emission from Nanostructured Cubic Boron Nitride Islands, Appl. Phys. Lett., Vol. 92, 013115, 2008.01. |
| 59. |
K. Teii and T. Ikeda, Conductive and Resistive Nanocrystalline Diamond Films Studied by Raman Spectroscopy, Diamond Relat. Mater., Vol. 16, pp. 753-756, 2007.04. |
| 60. |
K. Teii, T. Ikeda, Effect of Enhanced C2 Growth Chemistry on Nanodiamond Film Deposition, Appl. Phys. Lett., Vol. 90, 111504, 2007.03. |
| 61. |
K. Teii, R. Yamao, T. Yamamura, S. Matsumoto, Synthesis of Cubic Boron Nitride Films with Mean Ion Energies of a Few eV, J. Appl. Phys., Vol. 101, 033301, 2007.02. |
| 62. |
H. Ito, K. Teii, M. Ito. M. Hori, Formation of Microcrystalline Diamond using a Low-Pressure Inductively Coupled Plasma Assisted by Thermal Decomposition of di-t-Alkyl Peroxide, Diamond Relat. Mater., Vol. 16, pp. 393-396., 2007.01. |
| 63. |
K. Teii and S. Matsumoto, Local Retarding Field for Ions towards a Positively Biased Substrate in Plasma and its Application to Soft Ion-Bombardment Processing, J. Appl. Phys., Vol. 101, 013302, 2007.01. |
| 64. |
K. Teii and T. Ikeda, Polymerization in Nanocrystalline Diamond Films by Oxygen Incorporation, Plasma Process. Polym., Vol. 3, pp. 708-712, 2006.11. |
| 65. |
K. Teii, Y. Kouzuma, K. Uchino, In Vacuo Substrate Pretreatments for Enhancing Nanodiamond Formation in Electron Cyclotron Resonance Plasma, J. Vac. Sci. Technol., A Vol. 24, pp. 1802-1806, 2006.09. |
| 66. |
T. Ikeda and K. Teii, Comparative Study on Nanocrystalline Diamond Growth from Acetylene and Methane, Diamond Relat. Mater., Vol. 15, pp. 635-638, 2006.04. |
| 67. |
K. Teii, T. Ikeda, A. Fukutomi, K. Uchino, Effect of Hydrogen Plasma Exposure on the Amount of trans-Polyacetylene in Nanocrystalline Diamond Films, J. Vac. Sci. Technol., B Vol. 24, pp. 263-266, 2006.01. |
| 68. |
Y. Kouzuma, K. Teii, S. Mizobe, K. Uchino, K. Muraoka, Time Dependence of Nucleation Density and Crystallinity of Diamond in Low-Pressure, Ion-Enhanced Deposition, Diamond Relat. Mater., 10.1016/j.diamond.2003.10.071, 13, 4-8, 656-660, 2004.05. |
| 69. |
K. Teii, M. Hori, T. Goto, Diagnostic and Analytical Study on a Low-Pressure Limit of Diamond Chemical Vapor Deposition in Inductively Coupled CO-CH4-H2 Plasmas, J. Appl. Phys., 10.1063/1.1686900, 95, 8, 4463-4470, 2004.05. |
| 70. |
K. Teii, Prediction of a Threshold Density of Atomic Hydrogen for Nanocrystalline Diamond Growth at Low Pressures, Chem. Phys. Lett., 10.1016/j.cplett.2004.03.096, 389, 4-6, 251-254, 2004.05. |
| 71. |
Y. Kouzuma, K. Teii, K. Uchino, K. Muraoka, Diamond Nucleation Density as a Function of Ion-Bombardment Energy in Electron Cyclotron Resonance Plasma, Phys. Rev. B, 10.1103/PhysRevB.68.064104, 68, 6, 064104, 2003.08. |
| 72. |
K. Teii, H. Yoshioka, S. Ono, S. Teii, Argon Dilution Effects on Diamond Deposition in Electron Cyclotron Resonance Plasma: A Double Probe Study, Thin Solid Films, 10.1016/S0040-6090(03)00669-2, 437, 1-2, 63-67, 2003.07. |
| 73. |
K. Teii, M. Mizumura, S. Matsumura, S. Teii, Time- and Space-Resolved Electric Potentials in a Parallel-Plate Radio-Frequency Plasma, J. Appl. Phys., 10.1063/1.1568158, Vol. 93, pp. 5888-5892, 2003.05. |
| 74. |
K. Teii, M. Hori, T. Goto, Ion-to-CH3 Flux Ratio in Diamond Chemical-Vapor Deposition, J. Appl. Phys., 10.1063/1.1506384, 92, 7, 4103-4108, 2002.10. |
| 75. |
Y. Kouzuma, K. Teii, K. Uchino, K. Muraoka, Diamond Nucleation Enhancement on Si by Controlling Ion-Bombardment Eneragy in Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.41.5749, 41, 9, 5749-5750, 2002.09. |
| 76. |
K. Teii, Soft Ion Impact for Surface Activation during Diamond Chemical-Vapor Deposition on Diamond and Silicon, Phys. Rev. B, 64, 12, 125327, 2001.09. |
| 77. |
K. Teii, M. Hori, T. Goto, Dual-Electrode Biasing for Controlling Ion-to-Adatom Flux Ratio during Ion-Assisted Deposition of Diamond, J. Appl. Phys., 10.1063/1.1359159, 89, 9, 4714-4718, 2001.05. |
| 78. |
K. Teii, M. Hori, T. Goto, Negative Bias Dependence of Sulfur and Fluorine Incorporation in Diamond Films Etched by an SF6 Plasma, J. Electrochem. Soc., Vol. 148, pp. G55-G58, 2001.02. |
| 79. |
K. Teii, M. Hori, T. Goto, Codeposition on Diamond Film Surface during Reactive Ion Etching in SF6 and O2 Plasmas, J. Vac. Sci. Technol., A Vol. 18, pp. 2779-2784, 2000.11. |
| 80. |
H. Ito, K. Teii, H. Funakoshi, M. Hori, T. Goto, M. Ito, T. Takeo, Loss Kinetics of Carbon Atoms in Low-Pressure High-Density Plasmas, J. Appl. Phys., Vol. 88, pp. 4537-4541, 2000.10. |
| 81. |
K. Teii, M. Hori, T. Goto, N. Ishii, Precursors of Fluorocarbon Film Growth Studied by Mass Spectrometry, J. Appl. Phys., Vol. 87, pp. 7185-7190, 2000.05. |
| 82. |
K. Teii, H. Ito, M. Hori, T. Takeo, T. Goto, Kinetics and Role of C, O, and OH in Low-Pressure Nanocrystalline Diamond Growth, J. Appl. Phys., Vol. 87, pp. 4572-4579, 2000.05. |
| 83. |
K. Teii, M. Hori, M. Ito, T. Goto, N. Ishii, Study on Polymeric Neutral Species in High-Density Fluorocarbon Plasmas, J. Vac. Sci. Technol., A Vol. 18, pp. 1-9, 2000.01. |
| 84. |
H. Ito, K. Teii, M. Ishikawa, M. Ito, M. Hori, T. Takeo, T. Kato, T, Goto, Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma, Jpn. J. Appl. Phys., Part 1 Vol. 38, pp. 4504-4507, 1999.07. |
| 85. |
K. Teii, Independent Control of Ion Energy and Flux in Plasma-Enhanced Diamond Growth, Appl. Phys. Lett., Vol. 74, pp. 4067-4069, 1999.06. |
| 86. |
K. Teii and T. Yoshida, Lower Pressure Limit of Diamond Growth in Inductively Coupled Plasma, J. Appl. Phys., Vol. 85, pp. 1864-1870, 1999.02. |
| 87. |
K. Teii, Diagnostics of the Diamond-Depositing Inductively Coupled Plasma by Electrostatic Probes and Optical Emission Spectroscopy, J. Vac. Sci. Technol., A Vol. 17, pp. 138-143, 1999.01. |
| 88. |
K. Teii and T. Yoshida, Structure Changes in a-C:H Films in Inductive CH4/Ar Plasma Deposition, Thin Solid Films, Vol. 333, pp. 103-107, 1998.11. |
| 89. |
K. Teii and T. Yoshida, Positive Bias Effects on the Growth of Diamond at Pressures below 100 mTorr, Thin Solid Films, Vol. 316, pp. 24-28, 1998.03. |
