Yoshihiro KANGAWA | Last modified date:2024.04.17 |
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Homepage
https://kyushu-u.elsevierpure.com/en/persons/yoshihiro-kangawa
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https://sites.google.com/view/kangawalab/
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Academic Degree
Dr. Engineering
Country of degree conferring institution (Overseas)
No
Field of Specialization
Crystal Growth, Surface Science
ORCID(Open Researcher and Contributor ID)
0000-0002-4982-8883
Total Priod of education and research career in the foreign country
00years02months
Outline Activities
1) Process informatics for new material development, 2) ab initio-based approach for vapor phase epitaxy of semiconductors, 3) development of deep UV LEDs & LDs and next generation power devices, etc.
Research
Research Interests
Membership in Academic Society
- Science in Semiconductor Chemical Vapor Deposition
keyword : Chemical Vapor Deposition
2024.04~2028.03. - Atomic-level control of AlGaN hetero-interfaces for deep-UV LED
keyword : deep UV LED
2023.04~2026.03. - Quantum-Theory-Based Multiscale Simulations toward the Development of Next-Generation Energy-Saving Semiconductor Devices
keyword : Quantum-Theory-Based Multiscale Simulations
2020.04~2023.03. - Realization of deep UV semiconductor lasers and the study of ultra-high-concentration impurity and polarization semiconductors
keyword : Deep UV Laser
2016.04~2022.03. - Materials Science and Advanced Electronics Created by Singularity
keyword : Singularity Structure
2016.04~2021.03. - Research and development of next-generation semiconductors for realization of energy-saving society
keyword : Power device
2016.04~2021.03. - Innovation Reliable Nitride based Power Devices and Applications
keyword : Power Device
2016.10~2020.11. - Control of composition of GaNAs for multi-junction solar cell
keyword : multi-junction solar cell, control of composition, GaNAs
2008.10~2017.03. - Solid source solution growth (3SG) of bulk AlN
keyword : Solution growth, AlN
2006.04~2020.11. - Surface phase diagram of InN grown by pressurized reactor MOVPE: An ab initio based-approach
keyword : cubic InN、ab initio calculation、free energy of vapor phase
2012.04~2017.03. - Growth mechanisms of graphene on vicinal SiC
keyword : Graphene
2009.04~2021.03. - Investigation of growth mechanisms of cubic-GaN
keyword : cubic GaN、ab initio calculation、free energy of vapor phase
2005.01~2014.03. - Control of composition of coherently grown InGaN thin films
keyword : InGaN, lattice constraint, compositional instability
2000.04~2014.03Homogeneous InGaN films with large indium mole fraction are difficult to grow because of their compositionally unstable nature. In order to understand the compositionally unstable nature of InGaN, I carried out thermodynamic analyses and empirical interatomic potential calculations. Moreover, I investigate the influence of lattice constraint from substrates on compositionally unstable nature of the alloy..
Books
Papers
1. | Yoshihiro Kangawa, Akira Kusaba, Paweł Kempisty, Kenji Shiraishi, Shugo Nitta, Hiroshi Amano, Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE, Crystal Growth & Design, 10.1021/acs.cgd.0c01564, 21, 3, 1878-1890, 2021.02. |
2. | Pawel Kempisty, Yoshihiro Kangawa, Evolution of the free energy of the GaN (0001) surface based on first-principles phonon calculations, PHYSICAL REVIEW B, 10.1103/PhysRevB.100.085304, 100, 085304-1-12, 2019.08. |
3. | Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano, DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ) metalorganic vapor phase epitaxy, Applied Physics Letters, 10.1063/1.4991608, 111, 14, 2017.10, The carbon incorporation mechanism in GaN(0001) and GaN(000 1) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed.. |
4. | Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto, Structural and optical properties of AlN grown by solid source solution growth method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.54.085501, 54, 8, 085501-1-5, 2015.08. |
5. | Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto, Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN, APPLIED PHYSICS EXPRESS, 10.7567/APEX.8.065601, 8, 6, 065601-1-3, 2015.06. |
6. | Y. Kangawa, T. Ito, A. Koukitu, K. Kakimoto, Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.100202, 53, 10, 100202-1-11, 2014.10. |
7. | Yoshihiro KANGAWA, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Takashi Nakayama, Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach, MATERIALS, 10.3390/ma6083309, 6, 8, 3309-3360, 2013.08, [URL], We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed.. |
8. | Yoshihiro KANGAWA, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto, Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources, APPLIED PHYSICS EXPRESS, 10.1143/APEX.4.095501, 4, 9, 095501-1-095501-3, 2011.09, 窒化アルミニウムは深紫外LEDやパワーデバイス用の材料として期待されている。しかし、そのバルク成長技術は開発途上にある。本研究では、固体ソース溶液成長技術を開発し、窒化アルミニウムのバルク成長に適用した。新規溶液成長技術により、従来の窒素ガスを窒素原料とする低温溶液成長技術に比べ約2倍の成長速度を達成することに成功した。また、得られた窒化アルミニウム単結晶に含まれる貫通転位密度はハライド気相成長法により作製した単結晶と同程度であり、高品質結晶の成長が確認された。以上より、本研究で開発した固体ソース溶液成長技術の適用可能性が示唆された。. |
Presentations
- The Japan Society of Applied Physics
- The Japan Society of Applied Physics
- The Japanese Association for Crystal Growth
- The Japanese Association for Crystal Growth
- The Japanese Association for Crystal Growth
Educational
Educational Activities
I also hold an appointment in the Interdisciplinary Graduate School of Engineering Sciences (IGSES). I teach courses on the crystal growth of semiconductors. I educate DC and MC students to develop their ability to perform the process informatics of new materials.
Other Educational Activities
- 2024.05.
- 2016.03.
- 2012.07.
- 2011.11.
- 2011.11.
- 2011.04.
- 2010.06.
Social
Professional and Outreach Activities
I was appointed as the councilor of International and domestic scientific organizations, the editor of international journals and domestic journals, a member/chair of program committees, and organizing committees of international and domestic conferences. I collaborate with researchers in Germany, Poland, the USA, and so on. I also joined some international research projects: HORIZON 2020 "InRel-NPower 2017-2020" member, and EIG Concert-Japn "AtLv-AlGaN 2023-2025" PI..
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