Kyushu University Academic Staff Educational and Research Activities Database
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Tanaka Satoru Last modified date:2023.06.27

Graduate School
Undergraduate School

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 Reseacher Profiling Tool Kyushu University Pure
Academic Degree
Country of degree conferring institution (Overseas)
Yes Doctor
Field of Specialization
Materials Science, Surface Physics, Semiconductor Physics
Total Priod of education and research career in the foreign country
Research Interests
  • Science and applications of transferred graphene
    keyword : graphene transfer, electronic states
  • Group IV 2D materials and related electronic properties
    keyword : 2D materials, graphene, silicene, germanene, stance
  • Physics on self-organized nanostructures on SiC surfaces
    keyword : wide-gap semiconductors, electronic device, nanostructure, self-organization, bottom-up technology
  • Self-modification of SiC surfaces
    keyword : wide-gap semiconductor, graphene, electronic device, optical device
  • Growth of III-nitride semiconductors and their optical properties
    keyword : wide-gap semiconductor, new crystal, epitaxy, MBE, UV-LED
  • Growth and physics of graphene
    keyword : graphene, electronic device, nanostructure
  • SiC electronic device
    keyword : wide-gap semiconductor, MOSFET, nanostructure
Academic Activities
1. Kohei Fukuma, Anton Visikovskiy , Takushi Iimori, Toshio Miyamachi, Fumio Komori, Satoru Tanaka, Formation of graphene nanoribbons on the macrofacets of vicinal 6H-SiC(0001) surfaces, PHYSICAL REVIEW MATERIALS, 10.1103/PhysRevMaterials.6.124003, 6, 124003-1-124003-8, 2022.12, Thermal decomposition of vicinal 6H-SiC(0001) surfaces with miscut angles toward the [11 ̄00] direction
results in the appearance of pairs of (0001) macroterraces and (11 ̄0n) macrofacets covered with graphene, as
follows. A carpetlike carbon layer grows on the surface, covering both the macroterraces and macrofacets; it
forms a (6R3 × 6R3) buffer layer on the former ones, whereas its partial periodic bonding with the SiC steps
on the latter ones generates a pseudographene nanoribbon (pseudo-GNR) array. The nanoribbons have a width of 1.7–1.8 nm and are aligned in the [112 ̄0] direction with a spatial periodicity of 3.3 nm. Scanning tunneling spectroscopy at a nanoribbon indicated a 0.4–0.5 eV energy gap and the Raman spectroscopy analysis of the pseudo-GNR array showed the absence of the 2D peak and the polarization dependence of the G and D peaks, which is typical of the armchair-edge nanoribbon..
2. Iimori Takushi、Visikovskiy Anton、Imamura Hitoshi、Miyamachi Toshio、Kitamura Miho、Horiba Koji、Kumigashira Hiroshi、Mase Kazuhiko、Nakatsuji Kan、Tanaka Satoru、Komori Fumio, Electronic structure of 3 degree-twisted bilayer graphene on 4H-SiC(0001), Physical Review Materials, 10.1103/PhysRevMaterials.5.L051001, 5, L051001-1-L051001-6, 2021.03.
3. Imamura, H., Visikovskiy, A., Uotani, R., Kajiwara, T., Ando, H., Iimori, T., Iwata, K., Miyamachi, T., Nakatsuji, K., Mase, K., Shirasawa, T., Komori, F. & Tanaka, S., Twisted bilayer graphene fabricated by direct bonding in a high vacuum, Applied Physics Express, 13, 7, 075004, 2020.06.
4. Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka, Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface, Applied Physics Express, 11, 1, 015202, 2017.12, Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin–orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn–Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at K" and M" points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ..
5. 田中 悟, ANTON VISIKOVSKIY, 梶原隆司, 小森 文夫, 吉村, 飯盛 たくし, 木本 真一, Graphene/SiC(0001) interface structures induced by Si intercalation and their influence
on electronic properties of graphen, PHYSICAL REVIEW B, 94, 245421, 2016.12, Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device application. However, the first graphitic layer on SiC transforms to a buffer layer because of strong coupling with the substrate. The properties of several subsequent layers are also significantly degraded. One method to decouple graphene from the substrate is Si intercalation. In the present work, we report observation and analysis of interface structures formed by Si intercalation in between the graphene layer and the SiC(0001) surface depending on Si coverage and influence of these interfaces on graphene electronic structure by means of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and theoretical first-principles calculations. The STM appearance of observed periodic interface structures strongly resembles previously known Si-rich phases on the SiC(0001) surface. Based on the observed range of interface structures we discuss the mechanism of graphene layer decoupling and differences in stability of the Si-rich phases on clean SiC(0001) and in the graphene/SiC(0001) interface region. We also discuss a possibility to tune graphene electronic properties by interface engineering..
6. H. A. Hafez, I. Al-Naib, M. M. Dignam, Y. Sekine, K. Oguri, F. Blanchard, D. G. Cooke, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki, Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene, Phys. Rev. B, 91, 035422, 2015.10.
7. A. Endo, F. Komori, K. Morita, T. Kajiwara, Tanaka Satoru, Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC, J. Low Temp. Phys., 179, 237, 2015.09.
8. S. W. King, Tanaka Satoru, R. F. Davis, R. J. Nemanich, Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces, J. Vac. Sci. Tech. A, 33, 5, 05E105, 2015.07.
9. H. Tochihara, T. Shirasawa, T. Suzuki, T. Miyamachi, T. Kajiwara, K. Yagyu, S. Yoshizawa, T. Takahashi, Tanaka Satoru, F. Komori, Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000-1) surfaces, Appl. Phys. Lett. , 104, 051601, 2015.04.
10. Hagihara Yoshihito, Tanaka Satoru, Graphene nanoribbons grown on epitaxial SixCyOz layer on vicinal SiC(0001) surfaces by chemical vapor deposition, Appl. Phys. Express, 6, 055102, 2013.04.
11. Kajiwara Kakashi, Tanaka Satoru, Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy, Physical Review B 87, 121407 (2013). , 87, 121407, 2013.03, We present a method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consists of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1¯100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high-density GNRs, enable us to observe the electronic structure at K points by angle-resolved photoemission spectroscopy, showing a clear band-gap opening of at least 0.14 eV..
12. Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto, Hiroki Hibino, A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H–SiC, Diamond & Related Materials, 25, 80-83, 2012.03, Few-layer epitaxial graphenes grown on vicinal 6H–SiC (0001) were characterized by confocal Raman imaging.
In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next,
few-layer graphenes started to grow toward directions perpendicular to [11–20] of the SiC substrate. The
shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can
be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene.
The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the
substrate with increasing of the growth times..
13. K. Hayashi, S. Mizuno, S. Tanaka, LEED analysis of graphite films on vicinal 6H-SiC(0001) surface, Journal of Novel Carbon Resource Sciences, 2, 0001, 17, 2010.08.
14. Kan Nakatsuji, Yuki Shibata, Ryota Niikura, Fumio Komori, Kouhei Morita, Satoru Tanaka, Shape, width, and replicas of π bands of single-layer graphene grown on Si-terminated vicinal SiC(0001), Phys. Rev. B, 82, 4, 045428, 2010.07.
15. K. Kisoda, S. Kamoi, N. Hasuike, H. Harima, K. Morita, S. Tanaka, A. Hashimoto, Few-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy, Appl. Phys. Lett., 97, 3, 033108, 2010.05.
16. S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi, Anisotropic transport in graphene on SiC substrate with periodic nanofacets, Appl. Phys. Lett., 96, 062111, 2010.01.
17. S. Tanaka, K. Morita, H. Hibino, Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces, Phys. Rev. B, Rapid Communication, 81, 041406(R), 2010.01.
18. T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, H. Tochihara, Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001), Phys. Rev. B, 79, 24, 241301(R), 2009.06.
19. K. Hayashi, K. Morita, S. Mizuno, H. Tochihara, S. Tanaka, Stable surface termination on vicinal 6H-SiC(0001) surfaces, Surf. Sci., 603, 566, 2009.05.
20. A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka, Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene, Diamond and Related Materials, 18, 388, 2009.04.
21. A. Hashimoto, K. Iwao, S. Tananka, A. Yamamoto, van der Waals epitaxy of solid C 60 on graphene sheet, Diamond and Related Materials, 17, 1622, 2008.04.
22. M. Fujii, S. Tanaka, Ordering distance of surface nanofacets on vicinal 4H-SiC(0001), Phys. Rev. Lett., 99, 016102, 2007.07.
23. M. Ebihara, S. Tanaka, I. Suemune, Nucleation and growth mode of GaN on vicinal SiC surfaces, Jpn. J. Appl. Phys., 46, L348, 2007.04.
24. T. Shirasawa ,K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, H. Tochihara, Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface, Phys. Rev. Lett., 98, 136105, 2007.02.
25. S. Juodkazis, K. Nishimura, S. Tanaka, H. Misawa, E. G. Gamaly, B. Luther-Davies, L. Hallo, P. Nicolai, V. T. Tikhonchuk, Laser-induced microexplosion confined in the bulk of a sapphire crystal: Evidence of multimegabar pressures, Phys. Rev. Lett. , 96, 166101, 2006.11.
26. H. Nakagawa, S. Tanaka, I. Suemune, Self-ordering of nanofacets on vicinal SiC surfaces, Phys. Rev. Lett., 91, 226107, 2003.11.
1. S. Tanaka, H. Imamura, R. Uotani, T. Kajiwara, A. Visikovskiy, T. Iimori, T. Miyamachi, K. Nakatsuji, K. Mase, F. Komori, Rotation-angle controlled twisted bilayer graphene, 12th International Symposium on Atomic Level Characterizations for New Materials and Devices '19, 2019.10, Twisted bilayer graphene (TBG) shows variety of electronic characteristics depending on its in-plane rotation-angle due to moiré potential. The Fermi velocity decreases dramatically with the angle less than 5° and moreover, superconductivity is emerged at approximately 1° magic angle. TBG has been fabricated by tape-exfoliation and transferring processes. However, these processes have potential difficulties in obtaining large area, precise control of the rotation angle, and contaminant-free interlayer structures. A large area sample is especially essential to evaluate electronic structure by macro-probe characterizations such as angle-resolved photoemission spectroscopy (ARPES). Thus, we aimed at solving these problems by direct transfer of newly developed CVD grown graphene on SiC in vacuum..
2. S. Tanaka, H. Imamura, R. Uotani, T. Kajiwara, A. Visikovskiy, T. Iimori, T. Miyamachi, K. Nakatsuji, K. Mase, F. Komori, Fabrication and characterization of twisted bilayer graphene, Materials Research Meeting 2019 December 10-14, 2019, Yokohama, Japan, 2019.12, Twisted bilayer graphene (TBG) exhibits unique electronic characteristics depending on its in-plane rotation-angle due to moiré potential. The Fermi velocity decreases dramatically with the angle less than 5° and moreover, superconductivity is emerged at approximately 1° magic angle. TBG has been fabricated by tape-exfoliation of CVD graphene on metal substrates and transferring processes. However, these processes have potential problems in obtaining large area, precise control of the rotation angle, and contamination. A large area sample is especially desired to evaluate electronic structure by angle-resolved photoemission spectroscopy (ARPES), which normally measures macroscopic area. Therefore, we aimed at solving these problems by direct transfer of newly developed CVD grown graphene on SiC..
Membership in Academic Society
  • The Physical Society of Japan
  • The Japan Society of Applied Physics
  • Materials Research Society