||Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka, Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface, Applied Physics Express, 11, 1, 015202, 2017.12, Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin–orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn–Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at K" and M" points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ..
||田中 悟, ANTON VISIKOVSKIY, 梶原隆司, 小森 文夫, 吉村, 飯盛 たくし, 木本 真一, Graphene/SiC(0001) interface structures induced by Si intercalation and their influence
on electronic properties of graphen, PHYSICAL REVIEW B, 94, 245421, 2016.12, Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device application. However, the first graphitic layer on SiC transforms to a buffer layer because of strong coupling with the substrate. The properties of several subsequent layers are also significantly degraded. One method to decouple graphene from the substrate is Si intercalation. In the present work, we report observation and analysis of interface structures formed by Si intercalation in between the graphene layer and the SiC(0001) surface depending on Si coverage and influence of these interfaces on graphene electronic structure by means of low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and theoretical first-principles calculations. The STM appearance of observed periodic interface structures strongly resembles previously known Si-rich phases on the SiC(0001) surface. Based on the observed range of interface structures we discuss the mechanism of graphene layer decoupling and differences in stability of the Si-rich phases on clean SiC(0001) and in the graphene/SiC(0001) interface region. We also discuss a possibility to tune graphene electronic properties by interface engineering..
||H. A. Hafez, I. Al-Naib, M. M. Dignam, Y. Sekine, K. Oguri, F. Blanchard, D. G. Cooke, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki, Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene, Phys. Rev. B, 91, 035422, 2015.10.
||A. Endo, F. Komori, K. Morita, T. Kajiwara, Tanaka Satoru, Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC, J. Low Temp. Phys., 179, 237, 2015.09.
||S. W. King, Tanaka Satoru, R. F. Davis, R. J. Nemanich, Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces, J. Vac. Sci. Tech. A, 33, 5, 05E105, 2015.07.
||H. Tochihara, T. Shirasawa, T. Suzuki, T. Miyamachi, T. Kajiwara, K. Yagyu, S. Yoshizawa, T. Takahashi, Tanaka Satoru, F. Komori, Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000-1) surfaces, Appl. Phys. Lett. , 104, 051601, 2015.04.
||Hagihara Yoshihito, Tanaka Satoru, Graphene nanoribbons grown on epitaxial SixCyOz layer on vicinal SiC(0001) surfaces by chemical vapor deposition, Appl. Phys. Express, 6, 055102, 2013.04.
||Kajiwara Kakashi, Tanaka Satoru, Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy, Physical Review B 87, 121407 (2013).
, 87, 121407, 2013.03, We present a method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consists of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1¯100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high-density GNRs, enable us to observe the electronic structure at K points by angle-resolved photoemission spectroscopy, showing a clear band-gap opening of at least 0.14 eV..
||Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto, Hiroki Hibino, A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H–SiC, Diamond & Related Materials, 25, 80-83, 2012.03, Few-layer epitaxial graphenes grown on vicinal 6H–SiC (0001) were characterized by confocal Raman imaging.
In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next,
few-layer graphenes started to grow toward directions perpendicular to [11–20] of the SiC substrate. The
shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can
be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene.
The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the
substrate with increasing of the growth times..
||K. Hayashi, S. Mizuno, S. Tanaka, LEED analysis of graphite films on vicinal 6H-SiC(0001) surface, Journal of Novel Carbon Resource Sciences, 2, 0001, 17, 2010.08.
||Kan Nakatsuji, Yuki Shibata, Ryota Niikura, Fumio Komori, Kouhei Morita, Satoru Tanaka, Shape, width, and replicas of π bands of single-layer graphene grown on Si-terminated vicinal SiC(0001), Phys. Rev. B, 82, 4, 045428, 2010.07.
||K. Kisoda, S. Kamoi, N. Hasuike, H. Harima, K. Morita, S. Tanaka, A. Hashimoto, Few-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy, Appl. Phys. Lett., 97, 3, 033108, 2010.05.
||S. Tanaka, K. Morita, H. Hibino, Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces, Phys. Rev. B, Rapid Communication, 81, 041406(R), 2010.01.
||S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi, Anisotropic transport in graphene on SiC substrate with periodic nanofacets, Appl. Phys. Lett., 96, 062111, 2010.01.
||T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, H. Tochihara, Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001), Phys. Rev. B, 79, 24, 241301(R), 2009.06.
||K. Hayashi, K. Morita, S. Mizuno, H. Tochihara, S. Tanaka, Stable surface termination on vicinal 6H-SiC(0001) surfaces, Surf. Sci., 603, 566, 2009.05.
||A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka, Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene, Diamond and Related Materials, 18, 388, 2009.04.
||A. Hashimoto, K. Iwao, S. Tananka, A. Yamamoto, van der Waals epitaxy of solid C 60 on graphene sheet, Diamond and Related Materials, 17, 1622, 2008.04.
||M. Fujii, S. Tanaka, Ordering distance of surface nanofacets on vicinal 4H-SiC(0001), Phys. Rev. Lett., 99, 016102, 2007.07.
||M. Ebihara, S. Tanaka, I. Suemune, Nucleation and growth mode of GaN on vicinal SiC surfaces, Jpn. J. Appl. Phys., 46, L348, 2007.04.
||T. Shirasawa ,K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, H. Tochihara, Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface, Phys. Rev. Lett., 98, 136105, 2007.02.
||S. Juodkazis, K. Nishimura, S. Tanaka, H. Misawa, E. G. Gamaly, B. Luther-Davies, L. Hallo, P. Nicolai, V. T. Tikhonchuk, Laser-induced microexplosion confined in the bulk of a sapphire crystal: Evidence of multimegabar pressures, Phys. Rev. Lett. , 96, 166101, 2006.11.
||H. Nakagawa, S. Tanaka, I. Suemune, Self-ordering of nanofacets on vicinal SiC surfaces, Phys. Rev. Lett., 91, 226107, 2003.11.