Kyushu University Academic Staff Educational and Research Activities Database
Researcher information (To researchers) Need Help? How to update
Naho Itagaki Last modified date:2020.02.26



Graduate School
Undergraduate School
Other Organization


Homepage
http://plasma.ed.kyushu-u.ac.jp/~inorganic/
Academic Degree
Doctor of Science
Country of degree conferring institution (Overseas)
No
Field of Specialization
Plasma Science, Inorganic Material Science
Total Priod of education and research career in the foreign country
00years00months
Research
Research Interests
  • Fabrication of ultrafast switching devices using excitonic transistor
    keyword : excitonic devices, transistor
    2011.01.
  • Development of alternative rare metal materials for next generation electronic/photonic diveices
    keyword : alternative rare metal, electronic devices, photonic devices
    2010.04.
  • Development of novel fabrication method for oxide semiconductors

    keyword : oxide semiconductor
    2010.04.
Academic Activities
Papers
1. K. Tanaka, H. Hara, S. Nagaishi, L. Shi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD, Plasma Fusion Res., 10.1585/pfr.14.4406141, 14, 4406141, 2019.09.
2. L. Shi, K. Tanaka, H. Hara, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films, Plasma Fusion Res., 10.1585/pfr.14.4406144, 14, 4406144, 2019.09.
3. S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of Gas Pressure on the Size Distribution and Structure of Carbon Nanoparticles Using Ar + CH4 Multi-Hollow Discharged Plasma Chemical Vapor Deposition, Plasma Fusion Res., 10.1585/pfr.14.4406115, 14, 4406115, 2019.09.
4. R. Zhou, K. Kamataki, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani, Spatial-Structure of Fluctuation of Amount of Nanoparticles in Amplitude-Modulated VHF Discharge Reactive Plasma, Plasma Fusion Res., 10.1585/pfr.14.4406120, 14, 4406120, 2019.09.
5. N. Miyahara, S. Urakawa, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Sputter Epitaxy of (ZnO)x(InN)1-x films on Lattice-mismatched Sapphire Substrate, MRS Adv., 10.1557/adv.2019.17, 4, 27, 1551-1556, 1551-1556, 2019.01.
6. S. Muraoka, L. Jiahao, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Effects of nitrogen impurity on zno crystal growth on Si substrates, MRS Adv., 10.1557/adv.2019.28, 4, 27, 1557-1563, 1557-1563, 2019.01.
7. N. Miyahara, K. Iwasaki, D. Yamashita, D. Nakamura, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Photoluminescence of (ZnO)0.82 (InN)0.18 films: Incident light angle dependence, Mater. Sci. Forum, 10.4028/www.scientific.net/MSF.941.2099, 941, 2099-2103, 2018.12.
8. N. Itagaki, K. Takeuchi, N. Miyahara, K. Imoto, H. Seo, K. Koga, M. Shiratani, Effects of sputtering pressure on (ZnO)x(InN)1-x crystal film growth at 450ºC, Mater. Sci. Forum, 10.4028/www.scientific.net/MSF.941.2093, 941, 2093-2098, 2018.12.
9. R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Cross-correlation analysis of fluctuations of interactions between nanoparticles and low pressure reactive plasmas, Mater. Sci. Forum, 10.4028/www.scientific.net/MSF.941.2104, 941, 2104-2108, 2018.12.
10. T. Fang, K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka,Y. Setsuhara, The effect of the H2/(H2+Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition, Thin Solid Films, 10.1016/j.tsf.2018.02.035, 660, 891-898, 2018.08.
11. T. Kojima, S. Toko, K. Tanaka, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition, Plasma Fusion Res., 10.1585/pfr.13.1406082, 13, 1406082, 2018.06.
12. H. Seo, D. Sakamoto, H. Chou, N. Itagaki, K. Koga, M. Shiratani , Progress in photovoltaic performance of organic/inorganic hybrid solar cell based on optimal resistive Si and solvent modified poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) junction, Progress in Photovoltaics: Research and Applications, 10.1002/pip.2961, 26, 2, 145-150, 2018.02.
13. S. Tanami, D. Ichida, S. Hashimoto, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani, Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition, Thin Solid Films , 10.1016/j.tsf.2017.02.067 , 641, 59-64, 2017.11.
14. S. Toko, K. Keya, Y. Torigoe, T. Kojima, H. Seo, N. Itagaki, K. Koga, M. Shiratani , Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH4 plasma chemical vapor deposition, Surf. Coat. Technol., 10.1016/j.surfcoat.2017.01.034, 326, Part B, 388-394, 2017.10.
15. H. Seo, C. V.V.M. Gopi, H.-J. Kim, N. Itagaki, K. Koga, M. Shiratani, Performance enhancement of quantum dot-sensitized solar cells based on polymer nano-composite catalyst, Electrochimica Acta, 10.1016/j.electacta.2017.08.030, 249, 337-342, 2017.09.
16. K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani, Synthesis of Nanoparticles using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body , ECS Transactions, 10.1149/07703.0017ecst, 77, 3, 17-24, 2017.05.
17. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Densities and surface reaction probabilities of oxygen and nitrogen atoms during sputter deposition of ZnInON on ZnO, IEEE Trans. Plasma Science, 10.1109/TPS.2016.2632124, 45, 2, 323-327, 2017.02.
18. K. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki , Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization, MRS Adv., 10.1557/adv.2016.617, 2, 5, 265-270, 2016.12.
19. K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Blue Photoluminescence of (ZnO)0.92(InN)0.08, MRS Adv., 10.1557/adv.2016.625, 2, 5, 277-282, 2016.12.
20. M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga , Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication, Materials Science Forum, 10.4028/www.scientific.net/MSF.879.1772, 879, 1772-1777 , 2016.11.
21. S. Toko, Y. Kanemitsu, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Optical Bandgap Energy of Si Nanoparticle Composite Films Deposited by a Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method, J. Nanosci. Nanotechnol., 10.1166/jnn.2016.13233, 16, 10, 10753-10757, 2016.10.
22. H. Seo, M. K. Son, S. Hashimoto, T. Takasaki, N. Itagaki, K. Koga, M. Shiratani, Surface Modification of Polymer Counter Electrode for Low Cost Dye-sensitized Solar Cells, Electrochimica Acta, 10.1016/j.electacta.2016.06.020, 210, 880-887, 2016.08.
23. H. Seo, S. H. Nam, N. Itagaki, K. Koga, M. Shiratani, and J.-H. Boo, Effect of Sulfur Doped TiO2 on Photovoltaic Properties of Dye-Sensitized Solar Cells, Electron. Mater. Lett., 10.1007/s13391-016-4018-8, 12, 4, 530-536, 2016.07.
24. K. Keya, T. Kojima, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Correlation between SiH2/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.55.07LE03, 55, 7S2, 07LE03, 2016.07.
25. T. Onozato, T. Katase, A. Yamamoto, S. Katayama, K. Matsushima, N. Itagaki, H. Yoshida, H. Ohta, Optoelectronic properties of valence-statecontrolled amorphous niobium oxide, J. Phys.: Condens. Matter, 10.1088/0953-8984/28/25/255001 , 28, 25, 255001, 2016.05.
26. H. Seo, D. Ichida, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani, S. H. Nam and J. H. Boo , Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO2, J. Nanosci. Nanotechnol., 10.1166/jnn.2016.12210, 16, 5, 4875-4879, 2016.05.
27. H. Seo, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani , Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition, Sci. Adv. Mater., 10.1166/sam.2016.2520, 8, 3, 636-639, 2016.03.
28. H. Seo, M.-K. Son, N. Itagaki, K. Koga, M. Shiratani, Polymer Counter Electrode of Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) Containing TiO2 Nano-particles for Dye-sensitized Solar Cells, Journal of Power Sources, 10.1016/j.jpowsour.2015.12.112, 307, 25-30, 2016.03.
29. K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering, MRS Advances, 10.1557/adv.2015.59, 1, 2, 115-119, 2016.01.
30. S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Effects of Gas Flow Rate on Deposition Rate and Amount of Si Clusters Incorporated into a-Si:H Films, Jpn. J. Appl. Phys. , 10.7567/JJAP.55.01AA19, 55, 1S, 01AA19, 2016.01.
31. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method, Jpn. J. Appl. Phys. , 10.7567/JJAP.55.01AA11, 55, 1S, 01AA11, 2016.01.
32. K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, N. Hayashi, M. Shiratani, Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.), Appl. Phys. Express, 10.7567/APEX.9.016201, 9, 1, 016201, 2015.12.
33. T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka, Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.158, 2015.10.
34. S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.149, 2015.10.
35. H. Seo, S. Hashimoto, D. Ichida, N. Itagaki, K. Koga and M. Shiratani , Structural alternation of tandem dye-sensitized solar cells based on mesh-type of counter electrode, Electrochimica Acta, 10.1016/j.electacta.2015.04.105, 179, 206-210, 2015.10.
36. K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani, Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.143, 2015.10.
37. K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.132, 2015.10.
38. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.145, 2015.10.
39. T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.150, 2015.10.
40. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.154, 2015.10.
41. T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.155, 2015.10.
42. D. Yamashita, M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Laser trapped single fine particle as a probe of plasma parameters, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.104, 2015.10.
43. S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.133, 2015.10.
44. Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Effects of electrode structure on characteristics of multi-hollow discharges, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.129, 2015.10.
45. T. Sarinont, T. Amano, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani, Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.136, 2015.10.
46. R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group, Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.101, 2015.10.
47. T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki, Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.49, 2015.10.
48. S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.152, 2015.10.
49. M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani, Attraction during binary collision of fine particles in Ar plasma, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.18, 2015.10.
50. M. Tateishi, K. Koga, R. Katayama, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experiment Group, Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances, J. Nucl. Mater. , 10.1016/j.jnucmat.2014.10.049, 463, 865–868, 2015.08.
51. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of ZnInON/ZnO multi-quantum well solar cells, Thin Solid Films, 10.1016/j.tsf.2015.01.012, 587, 106-111, 2015.07.
52. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method, Trans. Mater. Res. Soc. Jpn., 10.14723/tmrsj.40.123, 40, 2, 123-128, 2015.07.
53. S. Toko, Y. Torigoe, W. Chen, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Effects of cluster incorporation into hydrogenated amorphous silicon films in initial discharge phase on film stability, Thin Solid Films, 10.1016/j.tsf.2015.02.052 , 587, 126-131, 2015.07.
54. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.248, 1741, aa09-10, 2015.03.
55. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, ZnO-based semiconductors with tunable band gap for solar sell applications, Proc. SPIE photonics west 2015, 10.1117/12.2078114, 9364, 93640P, 2015.03.
56. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.87, 1741, aa09-12, 2015.02.
57. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.54.01AD02, 54, 1S, 01AD02, 2015.01.
58. N. Itagaki, K. Matsushima, D. Yamashia, H. Seo, K. Koga, M. Shiratani, Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap, Mater. Res. Express, 10.1088/2053-1591/1/3/036405, 1, 3, 036405, 2014.09.
59. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier, Trans. Mater. Res. Soc. Jpn., 10.14723/tmrsj.39.321, 39, 3, 321-324, 2014.09.
60. I. Suhariadi, M. Shiratani, N. Itagaki, Growth mechanism of ZnO deposited by nitrogen mediated crystallization, Mater. Res. Express, 10.1088/2053-1591/1/3/036403, 1, 3, 036403, 2014.09.
61. N. Itagaki, K. Kuwahara, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method, Opt. Engineering, 10.1117/1.OE.53.8.087109, 53, 8, 087109, 2014.08.
62. M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara, SiC Nanoparticle Composite Anode for Li-Ion Batteries, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2014.742, 1678, n08-58, 2014.07.
63. T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani, Plasma etching of single fine particle trapped in Ar plasma by optical tweezers, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012014, 518, 1, 012014, 2014.06.
64. J. W. Allen, M. S. Allen, D. C. Look, B. R. Wenner, N. Itagaki, K. Matsushima, I. Surhariadi, Infrared Plasmonics via ZnO, J. Nano Res., 10.4028/www.scientific.net/JNanoR.28.109, 28, 109-119, 2014.06.
65. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori, Emission spectroscopy of Ar + H-2+ C7H8 plasmas: C7H8 flow rate dependence and pressure dependence, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012010, 518, 1, 012010, 2014.06.
66. Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012007, 518, 1, 012007, 2014.06.
67. D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012002, 518, 1, 012002, 2014.06.
68. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012008, 518, 1, 012008, 2014.06.
69. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group, Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012009, 518, 1, 012009, 2014.06.
70. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Performance dependence of Si quantum dot-sensitized solar cells on counter electrode, Jpn. J. Appl. Phys. , 10.7567/JJAP.53.05FZ01, 53, 5S1, 05FZ01, 2014.05.
71. M. Shiratani, G. Uchida, H. Seo, D. Ichida, K. Koga, N. Itagaki, and K. Kamataki, Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes, Materials Science Forum, 10.4028/www.scientific.net/MSF.783-786.2022, 783-786, 2022-2027, 2014.05.
72. I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, and N. Itagaki, Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015064, 1, 015064, 2014.03.
73. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015020, 1, 015020, 2014.03.
74. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization, Proc. SPIE photonics west 2014, 10.1117/12.2041081 , 8987, 89871A, 2014.03.
75. H. Seo, M. Son, S. Park, M. Jeong, H. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell, Thin Solid Films, 10.1016/j.tsf.2013.08.103, 554, 122-126, 2014.03.
76. G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015082, 1, 015082, 2014.03.
77. S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani, Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015069, 1, 015069, 2014.03.
78. X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, .M. Hori, Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015072, 1, 015072, 2014.03.
79. M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga, Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015083, 1, 015083, 2014.03.
80. G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015080, 1, 015080, 2014.03.
81. Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P37, 2014.02.
82. A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida, Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S2-P35, 2014.02.
83. I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P05, 2014.02.
84. R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P03, 2014.02.
85. T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P19, 2014.02.
86. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, Spatial profile of flux of dust particles in hydrogen helicon plasmas, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P21, 2014.02.
87. D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Raman spectroscopy of a fine particle optically trapped in plasma, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P23, 2014.02.
88. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Quantum characterization and photovoltaic application of Si nano-particles fabricated by multi-hollow plasma discharge chemical vapor deposition, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S11-P36, 2014.02.
89. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori, Pressure dependence of carbon film deposition using H-assisted plasma CVD, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P14, 2014.02.
90. T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-SPD-P01, 2014.02.
91. K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P07, 2014.02.
92. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P17, 2014.02.
93. D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P33, 2014.02.
94. G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani, Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries, Proc. 8th Int. Conf. Reactive Plasmas, 4C-PM-O1, 2014.02.
95. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P02, 2014.02.
96. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S08-P10, 2014.02.
97. Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P36, 2014.02.
98. S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P32, 2014.02.
99. K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani, Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation (Invited), Proc. 8th Int. Conf. Reactive Plasmas, 3B-WS-14, 2014.02.
100. Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P35, 2014.02.
101. H. Seo, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells, Int. J. Precision Eng. Manuf., 10.1007/s12541-014-0343-8, 15, 2, 339-343, 2014.02.
102. Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S02-P10, 2014.02.
103. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida, A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, Proc. 8th Int. Conf. Reactive Plasmas, 4B-PM-O1, 2014.02.
104. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, G. Uchida, H. Seo, and N. Itagaki, Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, Jpn. J. Appl. Phys. , 10.7567/JJAP.53.010201, 53, 1, 010201, 2014.01.
105. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani, The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si, Thin Solid Films, 10.1016/j.tsf.2013.04.073, 546, 284-288, 2013.11.
106. H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo, Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2, Jpn. J. Appl. Phys., 10.7567/JJAP.52.11NM02, 52, 11S, 11NM02, 2013.11.
107. K. Koga, M. Tateishi, K. Nishiyama, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, Akiko Sagara, the LHD Experimental Group, Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NA08, 52, 11S, 11NA08, 2013.11.
108. K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 eV to 3.3 eV on ZnO Templates, Jpn. J. Appl. Phys., 10.7567/JJAP.52.11NM06, 52, 11S, 11NM06, 2013.11.
109. I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NB03, 52, 11S, 11NB03, 2013.11.
110. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, and M. Shiratani, Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si and SiH, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NA07, 52, 11S, 11NA07, 2013.11.
111. G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NA05, 52, 11S, 11NA05, 2013.11.
112. H. Seo, M. Son, H. Kim, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells, Jpn. J. Appl. Phys., 10.7567/JJAP.52.10MB07, 52, 10S, 10MB07, 2013.10.
113. G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells, Thin Solid Films, 10.1016/j.tsf.2013.04.111, 544, 93-98, 2013.10.
114. Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD, Surf. Coat. Technol., 10.1016/j.surfcoat.2012.04.029, 228, 1, S550–S553, 2013.08.
115. K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device, J. Nucl. Mater. , 10.1016/j.jnucmat.2013.01.154, 438, S727–S730, 2013.07.
116. K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten, Discharge power dependence of carbon dust flux in a divertor simulator, J. Nucl. Mater. , 10.1016/j.jnucmat.2013.01.169, 438, S788–S791, 2013.07.
117. Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Observation of nanoparticle growth process using a high speed camera, ISPC 21 Proceedings, 2013.07.
118. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Growth control of ZnO nano-rod with various seeds and photovoltaic application, J. Phys. : Conference Series (11th APCPST), 10.1088/1742-6596/441/1/012029, 441, 1, 012029, 2013.06.
119. S. Bornholdt, N. Itagaki, K. Kuwahara, H. Wulff, M. Shiratani and H. Kersten, Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films , Plasma Sources Sci. Technol., 10.1088/0963-0252/22/2/025019, 22 , 2, 025019, 2013.04.
120. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells, Electrochimica Acta, 10.1016/j.electacta.2013.02.026, 95, 1, 43-47, 2013.04.
121. D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi, Model for Thickness dependence of mobility and concentration in highly conductive ZnO, Opt. Engineering, 10.1117/1.OE.52.3.033801, 52, 3, 033801, 2013.03.
122. N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 84-87, 2013.03.
123. M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 100-103, 2013.03.
124. K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, Control of Deposition Profile and Properties of Plasma CVD Carbon Films, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 136-139, 2013.03.
125. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell, Electrochimica Acta, 10.1016/j.electacta.2012.09.087, 87, 1, 213-217, 2013.01.
126. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AD05, 52, 1S, 01AD05, 2013.01.
127. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani, High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AD01, 52, 1S, 01AD01, 2013.01.
128. I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki, Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AC08, 52, 1S, 01AC08, 2013.01.
129. S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Dust particle formation due to interaction between graphite and helicon deuterium plasmas, Fusion Engineering and Design, 10.1016/j.fusengdes.2012.10.002, 88, 1, 28-32, 2013.01.
130. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited), Proc. International Symposium on Dry Process, 34, 97-98, 2012.11.
131. Y. Kim, T. Matsunaga, K. Nakahara ,G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani , Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD , Thin Solid Films, 10.1016/j.tsf.2012.06.023, 523, 29-33, 2012.11.
132. K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage, Thin Solid Films, 10.1016/j.tsf.2012.07.059, 523, 76-79, 2012.11.
133. I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani, ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio, Trans. Mater. Res. Soc. Jpn., 10.14723/tmrsj.37.165, 37, 2, 165-168, 2012.06.
134. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers, Thin Solid Films, 10.1016/j.tsf.2011.10.136, 520, 14, 4674-4677, 2012.05.
135. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.890, 1426, 313-318, 2012.04.
136. Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.839, 1426, 307-311, 2012.04.
137. K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki , In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method, Journal of Instrumentation, 10.1088/1748-0221/7/04/C04017, 7, 4, C04017, 2012.04.
138. M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.1245, 1426, 377-382, 2012.04.
139. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa , Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited), Proc. of SPIE photonics west 2012, 10.1117/12.911971, 8263, 826306, 2012.01.
140. G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AD01, 51, 1, 01AD01, 2012.01.
141. K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AD03, 51, 1, 01AD03, 2012.01.
142. K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani, Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AD02, 51, 1, 01AD02, 2012.01.
143. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers, Proc. PVSEC-21, 4D-2P-11, 2011.11.
144. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization, Proc. PVSEC-21, 4D-2P-10, 2011.11.
145. Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste, Proc. PVSEC-21, 3D-5P-09, 2011.11.
146. T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films, Proc. PVSEC-21, 4D-2P-16, 2011.11.
147. K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD, Proc. PVSEC-21, 3D-2P-20, 2011.11.
148. Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd, Proc. PVSEC-21, 3D-2P-09, 2011.11.
149. K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD, Proc. Plasma Conf. 2011, 24P014-O, 2011.11.
150. K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure, Proc. Plasma Conf. 2011, 23G03, 2011.11.
151. Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD, Proc. Plasma Conf. 2011, 24P011-O, 2011.11.
152. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer, Proc. Intern. Symp. on Dry Process, 33, 133-134, 2011.11.
153. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering, Proc. Plasma Conf. 2011, 24G16, 2011.11.
154. T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition, Proc. Plasma Conf. 2011, 24P015-O, 2011.11.
155. M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD, Proc. Plasma Conf. 2011, 24G06, 2011.11.
156. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films, Proc. Plasma Conf. 2011, 24P008-O, 2011.11.
157. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD, Proc. Plasma Conf. 2011, 23P013-O, 2011.11.
158. K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method, Proc. Plasma Conf. 2011, 24P016-O, 2011.11.
159. K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Deposition of cluster-free a-Si:H films using cluster eliminating filter, Proc. Plasma Conf. 2011, 24P010-O, 2011.11.
160. K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten, Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage, Proc. Plasma Conf. 2011, 24P094-O, 2011.11.
161. G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD, Physica Status Solidi (c), 10.1002/pssc.201001230, 8, 10, 3017-3020, 2011.10.
162. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani, Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma, Appl. Phys. Express, 10.1143/APEX.4.105001, 4, 10, 105001, 2011.10.
163. G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye, Physica Status Solidi (c), 10.1002/pssc.201100166, 8, 10, 3021-3024, 2011.10.
164. K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method, Physica Status Solidi (c), 10.1002/pssc.201100229, 8, 10, 3013-3016, 2011.10.
165. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma , Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference, D13-318, 2011.09.
166. K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film, Thin Solid Films, 10.1016/j.tsf.2011.01.408, 519, 20, 6896-6898, 2011.08.
167. Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD, Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20), POL08, 2011.07.
168. M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki, Nano-factories in plasma: present status and outlook, J. Phys. D: Appl. Phys., 10.1088/0022-3727/44/17/174038 , 44, 17, 174038, 2011.05.
169. N. Itagaki, K. Kuwahara, K. Nakahara, Novel Fabrication Method for Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers, Proc. Int. Conf. Advances in Condensed and Nano Materials 2011, 10.1063/1.3653599, 1393, 23-26 , 2011.02.
170. K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani, Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics, International Conference on Advances in Condensed and Nano Materials (ICACNM), 10.1063/1.3653600, 1393, 27-30, 2011.02.
171. N. Itagaki, K. Kuwahara, Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2011.709 , 1315, 15-20 , mrsf10-1315-mm02-09 (6 pages) , 2011.01.
172. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase, Appl. Phys. Express, 10.1143/APEX.4.011101, 4, 1, 011101-011101-3 , 2011.01.
173. N. Itagaki, Novel fabrication method for oxide semiconductors
via atomic-additive mediated crystallization
, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686461, 998-1001, 2010.11.
174. M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki, Fluctuation Control for Plasma Nanotechnologies, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5685920, XII-XVI , 2010.11, プラズマナノテクノロジーで最重要課題となっている揺らぎの制御に関する現状と将来を展望した論文。.
175. G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686704, 2199-2201, 2010.11.
176. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686456, 1943-1947, 2010.11.
177. T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686679 , 2219-2212, 2010.11.
178. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686686, 2216-2218, 2010.11.
179. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles, Proc. of International Symposium on Dry Process, 43-44, P1-A17, 2010.11.
180. G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges , Proc. of MNC2010, 12D-11-66 , 2010.11.
181. G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00093, 2010.10.
182. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00087, 2010.10.
183. T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00089, 2010.10.
184. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group , Carbon dust particles generated due to H2 plasma-carbon wall interaction, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00114, 2010.10.
185. Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD, Proc. 35th IEEE Photovoltaic Specialists Conf., 10.1109/PVSC.2010.5617205, 3347-3351, 2010.07.
186. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method, Proc. 35th IEEE Photovoltaic Specialists Conf., 10.1109/PVSC.2010.5616514, 3722-3755, 2010.07.
187. H. Kumomi, S. Yaginuma, H. Omura, A.Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano, Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor, J. Display Technol., 10.1109/JDT.2009.2025521 , 5, 12, 531-540, 2009.12.
188. A. Goyal, T. Iwasaki, N. Itagaki, T. Den, and H. Kumomi, Favorable Elements for an Indium-based Amorphous-oxide TFT Channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) Systems, Mat. Res. Soc. Symp. Proc, 1109, 1109-B04-0, 2009.05.
189. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, Zn-In-O based thin-film transistors: Compositional dependence, Phys. Stat. Sol. (a), 10.1002/pssa.200778909, 205, 8, 1915–1919, 2008.08.
190. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,, Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system, Appl. Phys. Lett., 10.1063/1.2749177, 90, 24, 242114, 2007.06.
191. C. Niikura, N. Itagaki, Matsuda, Guiding Principles for Obtaining High-Quality Microcrystalline Silicon Growth Rates Using SiH4/H2 Glow-Discharge Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.46.3052, 46, 5A, 3052-3058, 2007.05.
192. C. Niikura, N. Itagaki, and Matsuda, High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode, Surf. Coat. Technol., 10.1016/j.surfcoat.2006.07.009, 201, 9-11, 5463-5467, 2007.02.
193. C. Niikura, N. Itagaki, and A. Matsuda, Guiding Principles for Preparing High Quality Microcrystalline Silicon at High Growth Rates, Trans. Mater. Res. Soc. Jpn., 31, 2, 503-506, 2006.06.
194. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor, Mat. Res. Soc. Symp. Proc., 10.1557/PROC-0928-GG10-04, 928, 80-85, 2006.06.
195. N. Itagaki, K. Sasaki, Y. Kawai, Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves, Thin Solid Films, 10.1016/j.tsf.2005.08.087, 506, 479-484, 2006.05.
196. D. Ha Thang, K. Sasaki, H. Muta, N. Itagaki, and Y. Kawai, Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma, Thin Solid Films, 10.1016/j.tsf.2005.08.064, 506, 485-488, 2006.05.
197. Y. Kawai, N. Itagaki, M. Koga, and H. Muta, Production of low electron temperature ECR plasma, Surf. Coat. Technol., 10.1016/j.surfcoat.2004.08.141, 193, 1-3, 11-16, 2005.04.
198. N. Itagaki, C. Niikura, A. Matsuda and M. Kondo, Production of high density VHF plasma using a cathode with interconnected multi holes, Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing, 163-164, 2005.01.
199. H. Muta, D. Ha Thang, N. Itagaki, and Y. Kawai, Investigation of the Plasma Parameters in 915 MHz ECR Plasma with SiH4/H2 Mixtures, Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing, 521-522, 2005.01.
200. C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, and Matsuda, High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma, Thin Solid Films, 10.1016/j.tsf.2003.12.041, 457, 1, 84-89, 2004.06.
201. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Control of the electron temperature by varying the resonance zone width in ECR plasma, Thin Solid Films, 10.1016/j.tsf.2003.12.014, 457, 1, 59-63, 2004.06.
202. H. Muta, N. Itagaki, M. Koga, and Y. Kawai, Generation of a low-electron-temperature ECR plasma using mirror magnetic field, Surf. Coat. Technol., 10.1016/S0257-8972(03)00525-5, 174, 152-156, 2003.09.
203. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai, Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma, Thin Solid Films, 10.1016/S0040-6090(03)00395-X, 435, 1, 259-263, 2003.07.
204. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Relationship between the electron temperature and the power absorption profile in ECR plasma, Proc. 16th Intern. Symp. on Plasma Chemistry, Po5.18, 2003.06.
205. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai , Electron-temperature control in 915 MHz electron cyclotron resonance plasma, J. Vac. Sci. Technol., A, 10.1116/1.1513791, 20, 6, 1969-1973, 2002.11.
206. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave, Vacuum, 10.1016/S0042-207X(02)00138-0, 66, 3-4, 323-328, 2002.08.
207. H. Muta, N. Itagaki, and Y. Kawai, Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma, Vacuum, 10.1016/S0042-207X(02)00130-6, 66, 3-4, 209-214, 2002.08.
208. H. Muta, M. Koga, N. Itagaki, and Y. Kawai, Numerical investigation of a low-electron-temperature ECR plasma in Ar/N2 mixtures, Surf. Coat. Technol., 10.1016/S0257-8972(03)00261-5, 171, 1-3, 157-161, 2002.07.
209. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai, Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma, Proc. 5th Intern. Conf. Reactive Plasmas, 1, 319-320, 2002.07.
210. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai , Production of low electron temperature ECR plasma for thin film deposition, Surf. Coat. Technol., 10.1016/S0257-8972(01)01204-X, 142-144, 546-550, 2001.07.
211. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Production of low electron temperature ECR plasma for plasma application, Proc. XXV Intern. Conf. Phenomena in Ionized Gases, 137-138, 2001.07.
212. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Production of low electron temperature ECR plasma for plasma processing, Thin Solid Films, 10.1016/S0040-6090(01)00920-8, 390, 1-2, 202-207, 2001.06.
213. N. Itagaki, T. Yoshizawa, Y. Ueda and Y. Kawai, Investigation of ECR plasma uniformity from the point of view of production & confinement, Thin Solid Films, 10.1016/S0040-6090(00)01635-7, 386, 2, 152-159, 2001.05.
214. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Production of low-electron-temperature electron cyclotron resonance plasma using nitrogen gas in the mirror magnetic field, Jpn. J. Appl. Phys., 10.1143/JJAP.40.2489 , 40, 4A, 2489-2494, 2001.04.
215. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai , Effect of magnetic-mirror confinement on electron temperature control in ECR plasma, J. Plasma Fusion Res., 10.1016/S0257-8972(01)01204-X, 4, 305-308, 2001.02.
216. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Production of low-electron-temperature ECR plasma using 915 MHz microwave, Proc. Plasma Sci. Symp. 2001 and the 18th Symp. on plasma processing, 111-112, 2001.01.
217. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai, Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma, Surf. Coat. Technol., 10.1016/S0257-8972(00)00758-1, 131, 1-3, 54-57, 2000.09.
Presentations
1. N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Sputtering Deposition with Impurities: Another Key Parameter to Control Film Structures (Invited), Materials Research Meeting 2019 (MRM2019), 2019.12.
2. N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, ZnO Based Semiconductors for Excitonic Devices (Invited), Materials Research Meeting 2019 (MRM2019), 2019.12.
3. N. Itagaki, Inverse Stranski-Krastanov growth: a method for growth of single crystalline films beyond lattice-matching condition (Invited), Satellite Workshop of XXXIV ICPIG & ICRP-10 "New trends of plasma processes for thin films and related materials for the deep discussion on new trends of plasma processes", 2019.07.
4. N. Itagaki, K. Imoto, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, Sputter Epitaxy of ZnO Based Compounds for Excitonic Devices, 28th Annual Meeting of MRS-Japan 2018, 2018.12.
5. N. Itagaki, K. Imoto, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, Sputter Epitaxy of compound semiconductors via inverse Stranski-Krastanov mode: A method of single crystalline film growth beyond lattice matchins condition, 28th Annual Meeting of MRS-Japan 2018, 2018.12.
6. N. Itagki, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, Sputter Epitaxy via Inverse Stranski-Krastanov Growth Mode: A Method of Single Crystal Growth beyond Lattice Matching Condition, AVS Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018), 2018.12.
7. N. Itagki, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, Sputter epitaxy of high quality (ZnO)x(InN)1-x: a new semiconducting material for excitonic devices (Invited), 2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018), 2018.11.
8. N. Itagaki, M. Shiratani, Inverse Stranski-Krastanov Growth of Single Crystalline Films: A New Mode of Heteroepitaxy for Large Lattice Mismatched System (Invited), 10th International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC 2018), 2018.07.
9. A New Approach to Sputter Epitaxy for Growth of Thin Films with Atomically-Flat Surface on Large Lattice Mismatched Substrates.
10. N. Itagaki, Excitonic devices for on-chip optical interconnects, Joint workshop btw SKKU and Kyushu University Emerging materials and devices, 2018.01.
11. N. Itagaki, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Fabrication of High-Mobility Nanocrystal-Free a-In2O3:Sn Films by Magnetron Sputtering with Impurity-Mediated Amorphization Method, 27th annual meeting of MRS-J, 2017.12.
12. N. Itagaki, T. Takasaki, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani , Fabrication of High-Mobility Amorphous In2O3:Sn Films by RF Magnetron Sputtering with Impurity-Mediated Amorphization Method (Keynote), International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), 2017.08.
13. N. Itagaki, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Inverse Stranski-Krastanov Growth of Single Crystalline ZnO-Based Semiconductors on Lattice Mismatched Substrates (Invited), International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), 2017.08.
14. N. Itagaki, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Inverse Stranski-Krastanov Growth of Pit-Free Single Crystalline ZnO Films on Lattice Mismatched Substrates, 29th International Conference on Defects in Semiconductors (ICDS2017), 2017.08.
15. N. Itagaki, K. Matsushima, D. Ymashita, H. Seo, K. Koga, M. Shiratani, Sputtering growth of (ZnO)x(InN)1-x semiconductor: a ZnO-based compound with bandgap tunability over the entire visible spectrum (Invited), 26th annual meeting of MRS-J, 2016.12.
16. N. Itagaki and M. Shiratani, Plasma surface interactions of single crystal ZnO during sputtering in Ar+O2+N2, Workshop on Plasma surface interaction for technological applications, 2016.07.
17. N. Itagaki, Inverse SK mode of epitaxial film growth and its application to solar cells (Invited), The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells, 2016.02.
18. N. Itagaki, Single Crystal Growth On Large Lattice-Mismatched Substrates By Using Buffer Layers With Fine Grains (Invited), The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015), 2015.09.
19. N. Itagaki, T. Ide, K. Matsushima, T. Takasaki, D. Yamashita, H. Seo, K. Koga, Masaharu Shiratani, Sputtering growth of single-crystalline ZnO films on c-sapphire substrates by using impurity-mediated crystallization method: Effects of surface morphology of buffer layers, 2015 E-MRS Spring Meeting and Exhibit, 2015.05.
20. N. Itagaki, T. Takasaki, T. Nakanishi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, High-mobility amorphous In2O3:Sn films prepared by sputter deposition with nitrogen-mediated amorphization method, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/8th International Conference on Plasma Nanotechnology and Science (ISPlasma2015/IC-PLANTS2015), 2015.03.
21. N. Itagaki, ZnO-based semiconductors with tunable band gap for 3rd generation solar sells (Invited), International Society for Optics and Photonics, Photonics West 2015, 2015.02.
22. Naho Itagaki, ZnO-based semiconductors with tunable band gap for solar cell application (Invited), 2015 Japan-Korea Joint Symposium on Advanced Solar Cells, 2015.01.
23. N. Itagaki, Sputtering Growth of ZnO-based semiconductors with Band Gap Tunability over the Entire Visible Spectrum (Invited), Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014), 2014.12.
24. N. Itagaki, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Sputtering Growth of Pseudobinary ZnO-InN Alloys with Tunable Band Gap for Application in Multi-Quantum Well Solar Cells, 2014 MRS Fall Meeting, 2014.12.
25. N. Itagaki, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, and M. Shiratani, Synthesize of ZnO-based Semiconductor with Tunable Band Gap and Its Application in Multi-Quantum-Well Solar Cells, 6th World Conferenceon Photovoltaic Energy Conversion, 2014.11.
26. N. Itagaki, T. Nakanishi, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Non-Equilibrium and Extreme State -High-mobility amorphous In2O3:Sn films prepared via nitrogen-mediated amorphization-, Plasma Conference 2014, 2014.11.
27. N. Itagaki, Sputteing Growth of High-Quality ZnO-based Semiconductors for Optoelectronic Applications (Invited), American Vacuum Society 61st International Symposium and Exhibition (AVS), 2014.11.
28. N. Itagaki, Fabrication of Pseudo-binary ZnO-InN Alloys with Tunable Bandgap by Low-Temperature Magnetron Sputtering (Invited), 15th IUMRS-International Conference in Asia, 2014.08.
29. N. Itagaki, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Crystal Growth Control of Sputter-Deposited ZnO Films by Nitrogen-Mediated Crystallization Method , 15th IUMRS-International Conference in Asia, 2014.08.
30. N. Itagaki, K. Matsushima, R. Shimizu, and T. Ide, Sputter-Deposition of Pseudobinary ZnO-InN Alloys with Tunable Bandgap for Photovoltaic Application (Invited), International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014), 2014.07.
31. 板垣奈穂, Novel oxynitride semiconductors for photovoltaic applications (太陽電池のための新規酸窒化物材料の探索), 36th Seminar of Photovoltaic Power Generation Project (第36回平成26年度太陽光発電プロジェクト講演会 ), 2014.05.
32. N. Itagaki, Sputtering growth of ZnO-based semiconductors using ZnON buffer layers for optoelectronic applications (Invited), The International Symposium on Plasma-Nano Materials and Processes, 2014.04.
33. N. Itagaki, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani, Sputtering growth of single-crystalline ZnO-based semiconductors on lattice mismatched substrates (Invited), International Society for Optics and Photonics, Photonics West 2014, 2014.02.
34. ZnInON semiconductors for photovoltaic application.
35. Sputtering growth of ZnO based two-dimensional materials by utilizing impurity-mediated crystallization method.
36. N. Itagaki, K. Oshikawa, I. Suhariadi, K. Matsushima, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani, Crystallinity Control of Sputtered ZnO:Al Transparent Conducting Films by Utilizing Buffer Layers Fabricated via Nitrogen Mediated Crystallization, Solid State Devices and Materials 2013 (SSDM), 2013.09.
37. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G.Uchida, K. Koga, M. Shiratani, Synthesis and Characterization of Oxynitride Semiconductor ZnInON with Tunable Bandgap, The 26th Symposium on Plasma Science for Materials (SPSM-26), 2013.09.
38. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Band-Gap Engineering of ZnO Based Semiconductors Deposited by Sputtering, 2013 JSAP-MRS Joint Symposia, 2013.09.
39. N. Itagaki, Novel Approach to Sputtering Growth of Single Crystalline Oxide Semiconductors for Optoelectronic Applications (Invited), The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013), 2013.08.
40. N. Itagaki, Novel Application of Ar/N2 Discharges to Sputtering Growth of High Quality Oxide Semiconductors (Invited), The XXXI edition of the International Conference on Phenomena in Ionized Gases (ICPIG), 2013.07.
41. N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani, Sputter Deposition of Single Crystal ZnO Films on 18% Lattice mismatched c-Al2O3 Substrates via Nitrogen Mediated Crystallization, International Symposium on Sputtering and Plasma Processes (ISSP2013), 2013.07.
42. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa, and I. Suarihadi, Sputter Deposition of Semiconductor-Grade ZnO Based Materials on Lattice Mismatched Substrates (Invited), The Collaborative Conference on Materials Research 2013, 2013.06.
43. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of zinc-indium oxynitride semiconductors with narrow bandgap for excitonic transistors, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), 2013.02.
44. N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of atomically-flat ZnO films on lattice mismatched substrates via nitrogen mediated crystallization (Invited), The 16th International Workshop on Advanced Plasma Processing and Diagnostics, 2013.01.
45. N. Itagaki, K. Kuwahara, K. Matsushima, T. Hirose, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Epitaxial Growth of ZnO Based Semiconductors via Impurity-Additive Mediated Crysallization, 2012 MRS Fall Meeting, 2012.11.
46. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors, The 34th International Symposium on Dry Process , 2012.11.
47. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Zinc-Indium Oxynitride Thin Films for Multiple-Quantum–Well Solar Cells, Asia-Pacific Conference on Plasma Science and Technology (11th APCPST), 2012.10.
48. N. Itagaki, K. Matsushima, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, K. Koga, M. Shiratani, Zinc-Indium Oxynitride Semiconductors for Piezo-Electric-Field Effect MQW Solar Cells, IUMRS‐ICEM 2012 , 2012.09.
49. N. Itagaki, I. Suhariadi, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate, 13th International Conference on Plasma Surface Engineering (PSE2012), 2012.09.
50. N. Itagaki, Piezo-electric-field effect MQW solar cells based on novel oxynitride semiconductors, 日本化学会第92春季年会(2012), 2012.03.
51. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa , Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited), SPIE (International society for optics and photonics) photonics west 2012, 2012.01.
52. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization, The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2011.12.
53. Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering.
54. N. Itagaki, K. Kuwahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Spatial distribution of resistivity of ZnO:Al thin films fabricated on solid-phase crystallized seed layers, European Material Research Society 2011 Fall Meeting (E-MRS), 2011.09.
55. N. Itagaki, K. Kuwahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Fabrication of high quality ZnO films via nitrogen-mediated crystallization, 第24回プラズマ材料科学シンポジウム (SPSM-24), 2011.07.
56. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Fabrication of highly conducting ZnO:Al films utilizing solid-phase crystallized seed layer, European Materials Research Society 2011 Spring Meeting , 2011.05.
57. N. Itagaki, K. Kuwahara, and K. Nakahara, Novel fabrication method for transparent conducting oxide films
utilizing solid-phase crystallized seed layers (Invited), International Conference on Advances in Condensed and Nano Materials-2011(ICACNM-2011), 2011.02.
58. N. Itagaki, K. Kuwahara, Solid phase crystallization of ZnO films via nitrogen-atom mediation, 2010 MRS Fall Meeting, 2010.11.
59. N. Itagaki, Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization (Invited), International technical conference of IEEE Region 10, 2010.11, 高い電気伝導度と可視光透明性を有する酸化亜鉛(ZnO)はタッチパネルや太陽電池等に欠かせない透明導電膜材料として期待されている。しかし、その性能はレアメタル系材料に比べて低く、本格的な実用化には到っていない。本講演では、申請者が提案する新しい手法により、超低抵抗率を有するレアメタル代替透明導電膜材料を実現したことを報告する。本提案の作製技術は、次の2つの特長を有する。
1. 非晶質ZnON(酸窒化亜鉛)膜をアニールし、ZnOを固相結晶化させることで、結晶核密度の制御されたZnO薄膜を作製する。非晶質相からのZnO固相結晶化に成功した例は本研究が世界で初めてである。
2. 1.で作製した固相結晶化上にZnOを形成することにより、結晶成長初期における核発生が抑制されるため、結晶性に優れたZnO膜を形成することが出来る。これにより従来に比べ抵抗率が一桁低いZnO膜の作製に成功した。
 本研究の成果はZnO透明導電膜実用化のブレークスルーにつながるだけでなく、他の酸化物にも応用可能な、新しい手法として発展すると期待される。.
60. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Fabrication of a-ZnON films by Ar/N2 sputtering for solid-phase crystallization of ZnO, 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP), 2010.10.
61. N. Itagaki, Combinatorial sputtering of oxynitride semiconductors (Invited), 2010 International Workshop on Plasma Applications, 2010.06.
62. N. Itagaki, S. Yaginuma, H. Omura, A. Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano and H. Kumomi, Amorphous Oxide Semiconductor Based TFTs: Their Current Situation and Issues (Invited), 第19回日本MRS学術シンポジウム(English Session), 2009.12.
63. N. Itagaki, T. Iwasaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Zn-In-O based thin-film transistors: Compositional dependence, European Material Research Society 2007 Spring Meeting, 2007.06.
64. N. Itagaki, K. Sasaki and Y. Kawai, Electron-Temperature Measurement in SiH4/H2 ECR Plasma Produced by 915MHz Microwaves, 7th Asia Pacific Conf. Plasma Sci. Technol. and 17th Symp. Plasma Sci. Mater., 2004.06.
65. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Production of Electron-Temperature-Controllable ECR Plasma for Thin Film Deposition, 50th American Vacuum Soc. Int’l Symp., 2003.11.
66. N. Itagaki, K. Muta, Y. Kawai, N. Ishii, Relationship between the plasma parameter and the microwave power absorption in ECR plasma, American Phys. Soc. 45st Annual Meet. Division of Plasma Phys., 2003.11.
67. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Electron Temperature Control in ECR Plasma by Varying the Resonance Zone Width, Asian European Int’l Conf. Plasma Surface Engineering, 2003.09.
68. N. Itagaki, H. Muta, N. Ishii and Y. Kawai, Control of the electron temperature by varying the resonance zone width in ECR plasma, 16th Symposium on Plasma Science for Materials, 2003.06.
69. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Relationship between the electron temperature and the power absorption profile in ECR plasma, 16th Int’l. Symp. Plasma Chemistry, 2003.06.
70. N. Itagaki, S, Iwata, K. Muta, Y. Kawai, A. Yonesu, S. Kawakami, N. Ishii, Behaviour of N2 Dissociation in ECR Plasma, 4th Cross Straits Symp. Mater.,Energy and Environmental Sci., 2002.11.
71. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii, Y. Kawai, Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma, 16th European Conf. Atomic & Molecular Phys. Ionized Gases & 5th Int’l Conf. Reactive Plasmas, 2002.07.
72. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii, Y. Kawai, Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma, 6th Asian-European International Conference on Plasma Surface Engineering, 2002.07.
73. N. Itagaki, Y. Kawai, S. Kawakami, N. Ishii, Electron-temperature control in 915 MHz electron cyclotron resonance plasma, 48th American Vacuum Soc. Int’l Symp., 2001.10.
74. N. Itagaki, S. Kawakami, N. Ishii, Y. Kawai, Production of low electron temperature ECR plasma for plasma application, Int’l Conf. Phenomena in Ionized Gases, 2001.07.
75. N. Itagaki, S. Kawakami, N. Ishii, Y. Kawai, Production of low-electron temperature ECR plasma with large area using 915 MHz microwave, 6th Int’l Symp. Sputtering and Plasma Processes, 2001.06.
76. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Effect of Magnetic-Mirror Confinement on Electron Temperature Control in ECR Plasma, 11th Int. Toki Conf. on Plasma Phys.and Control.Nucl. Fusion, 2000.12.
77. N. Itagaki, Y.Ueda and Y. Kawai, Production of Low Electron Temperature ECR Plasma for Plasma Processing, 5th Asia-Pacific Conference on Plasma Science & Technology and 13th Symposium on Plasma Science for Materials, 2000.09.
78. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Production of low electron temperature ECR plasma for thin film deposition, Int’l Conf. Plasma Surface Engineering, 2000.09.
79. N. Itagaki, A. Fukuda, Y. Ueda, N.Ishii and Y. Kawai, Control of the Electron Temperature in an ECR Plasma for Thin Film Deposition, American Phys. Soc. 41st Annual Meet. Division of Plasma Phys., 1999.11.
80. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai, Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma, Asian European Int’l Conf. Plasma Surface Engineering, 1999.09.
81. N. Itagaki, T. Yoshizawa, Y. Ueda, Y. Kawai, Investigation of ECR plasma uniformity from the point of view of production & confinement, 12th Symposium on Plasma Science for Materials, 1999.06.
Membership in Academic Society
  • Materials Research Society
  • Europian Materials Research Society
  • The Japan Society of Applied Physics
Educational
Other Educational Activities
  • 2017.10.
  • 2017.07.
  • 2010.08.
  • 2010.08.