Kyushu University Academic Staff Educational and Research Activities Database
Researcher information (To researchers) Need Help? How to update
Saito Wataru Last modified date:2024.03.15



Graduate School
Undergraduate School


E-Mail *Since the e-mail address is not displayed in Internet Explorer, please use another web browser:Google Chrome, safari.
Homepage
https://kyushu-u.elsevierpure.com/en/persons/wataru-saito
 Reseacher Profiling Tool Kyushu University Pure
https://www.riam.kyushu-u.ac.jp/ece/SAITO_group/index_e.html
Phone
092-583-7761
Fax
092-583-7761
Academic Degree
Dr. Eng.
Country of degree conferring institution (Overseas)
No
Field of Specialization
Power Semiconductor Devices
ORCID(Open Researcher and Contributor ID)
0000-0001-9700-6713
Total Priod of education and research career in the foreign country
00years00months
Outline Activities
This section studies to develop power semiconductor devices for high-efficient conversion of electric power generated by renewable energy and high functional power modules connecting to the energy network.
Research
Research Interests
  • -power semiconductor devices for high-efficient conversion
    -high functional control technology of power semiconductor devices
    -power modules connecting to the energy network
    keyword : power semiconductor devices, electric power conversion, energy network
    2019.04.
Academic Activities
Papers
1. Wataru Saito, Shin-Ichi Nishizawa, Surface Buffer IGBT for High Total Performance, IEEE Transactions on Electron Devices, 10.1109/TED.2020.2999874, 67, 8, 3263-3269, 2020.08.
2. Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda and Ichiro Omura, Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications, IEEE Trans. Electron Devices, 53, 2, 356-362, 2006.02.
3. Wataru Saito, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi, Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device, Solid-State Electronics, 48, 4, 1555-1562, 2004.04.
4. Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi, High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior, IEEE Trans. Electron Devices, 50, 12, 2528-2531, 2003.12.
5. Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura, Semisuperjunction MOSFETs: New Design Concept for Lower On-Resistance and Softer Reverse-Recovery Body Diode, IEEE Trans. Electron Devices, 50, 8, 1801-1806, 2003.08.
Membership in Academic Society
  • IEEJ
  • IEEE
  • Japan Society of Applied Physics
  • IEICE
Educational
Educational Activities
Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering and Sciences