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Saito Wataru Last modified date：2023.01.24

Professor / Renewable Energy Center
Research Institute for Applied Mechanics


Graduate School
Department of Applied Science for Electronics and Materials
Interdisciplinary Graduate School of Engineering Sciences
Undergraduate School
School of Engineering


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Homepage
https://kyushu-u.pure.elsevier.com/en/persons/wataru-saito
　Reseacher Profiling Tool　Kyushu University Pure
https://www.riam.kyushu-u.ac.jp/ece/SAITO_group/index_e.html
Phone
092-583-7761
Fax
092-583-7761
Academic Degree
Dr. Eng.
Country of degree conferring institution (Overseas)
No
Field of Specialization
Power Semiconductor Devices
Total Priod of education and research career in the foreign country
00years00months
Outline Activities
This section studies to develop power semiconductor devices for high-efficient conversion of electric power generated by renewable energy and high functional power modules connecting to the energy network.
Research
Research Interests
  • -power semiconductor devices for high-efficient conversion
    -high functional control technology of power semiconductor devices
    -power modules connecting to the energy network
    keyword : power semiconductor devices, electric power conversion, energy network
    2019.04.
Academic Activities
Papers
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1. Wataru Saito, Shin-Ichi Nishizawa, Surface Buffer IGBT for High Total Performance, IEEE Transactions on Electron Devices, 10.1109/TED.2020.2999874, 67, 8, 3263-3269, 2020.08.
2. Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda and Ichiro Omura, Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications, IEEE Trans. Electron Devices, 53, 2, 356-362, 2006.02.
3. Wataru Saito, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi, Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device, Solid-State Electronics, 48, 4, 1555-1562, 2004.04.
4. Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura and Hiromichi Ohashi, High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior, IEEE Trans. Electron Devices, 50, 12, 2528-2531, 2003.12.
5. Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura, Semisuperjunction MOSFETs: New Design Concept for Lower On-Resistance and Softer Reverse-Recovery Body Diode, IEEE Trans. Electron Devices, 50, 8, 1801-1806, 2003.08.
Presentations
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Membership in Academic Society
  • IEEJ
  • IEEE
  • Japan Society of Applied Physics
  • IEICE
Educational
Educational Activities
Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering and Sciences


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