Language：English   Publishing type：Research paper (scientific journal)   Publisher：Plasma Processes and Polymers  

The current research focuses on carbon dioxide (CO2) conversion at ambient conditions using streamer plasma. In this study, treatment time and humidity have been found to influence CO2 conversion. Our findings reveal a maximum CO2 conversion rate of 35.2%, achieved with a remarkably high energy efficiency of CO2 conversion at 135% and a low energy cost of 2.17 eV/molecule. We employed optical emission and fourier-transform infrared spectroscopy spectroscopy to analyze the different dissociation products of CO2 and determine the percentage of CO2 conversion. Furthermore, we utilized a two-dimensional (2D) fluid dynamics model and a zero-dimensional (0D) chemistry model to gain insights into the reactor mechanism.

DOI： 10.1002/ppap.202300141

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Journal of Applied Physics  

In this study, we developed a hybrid machine learning technique by combining appropriate classification and regression models to address challenges in producing high-mobility amorphous In2O3:Sn (a-ITO) films, which were fabricated by radio-frequency magnetron sputtering with a nitrogen-mediated amorphization method. To overcome this challenge, this hybrid model that was consisted of a support vector machine as a classification model and a gradient boosting regression tree as a regression model predicted the boundary conditions of crystallinity and experimental conditions with high mobility for a-ITO films. Based on this model, we were able to identify the boundary conditions between amorphous and crystalline crystallinity and thin film deposition conditions that resulted in a-ITO films with 27% higher mobility near the boundary than previous research results. Thus, this prediction model identified key parameters and optimal sputtering conditions necessary for producing high-mobility a-ITO films. The identification of such boundary conditions through machine learning is crucial in the exploration of thin film properties and enables the development of high-throughput experimental designs.

DOI： 10.1063/5.0160228

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Scientific Reports  

This study provides the health effects assessment of rice cultivated from plasma-irradiated seeds. The rice (Oryza sativa L.) cultivated from seeds with plasma irradiation showed a growth improvement (slope-ratios of with plasma to without plasma were 1.066, 1.042, and 1.255 for tiller, and earing, and ripening periods, respectively) and an 4% increase in yield. The cultivated rice was used for repeated oral administrations to mice for 4-week period. Distilled water and rice cultivated from seeds without plasma irradiation were also used as control. The weights of the lung, kidney, liver, and spleen, with corresponding average values of 0.22 g, 0.72 g, 2.1 g, and 0.17 g for w/ plasma group and 0.22 g, 0.68 g, 2.16 g, and 0.14 g for w/o plasma group, respectively, showing no effect due to the administration of rice cultivated from plasma-irradiated seeds. Nutritional status, liver function, kidney function, and lipid, neutral fat profiles, and glucose metabolism have no significant difference between with and without plasma groups. These results show no obvious subacute effects were observed on rice grains cultivated and harvested from the mother plant that experienced growth improvement by plasma irradiation. This study provides a new finding that there is no apparent adverse health effect on the grains harvested from the plasma-irradiated seeds.

DOI： 10.1038/s41598-023-43897-y

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Materials Science in Semiconductor Processing  

High-quality amorphous silicon nitride (SiNx) thin films were fabricated by the controlled growth of nanoparticles during SiH4+N2 multi-hollow remote plasma chemical vapor deposition (CVD) at low substrate temperature 100 °C. Measurements from quartz crystal microbalances showed that a higher amount of nanoparticle incorporation in the SiNx film corresponded to a higher ratio of N/Si in the film, implying that the nanoparticles were nitrided in the plasma phase. We controlled the size of the nanoparticles by tuning the gas flow ratio of N2/SiH4 and the total gas flow rate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy showed that smaller nanoparticles in the plasma led to a higher ratio of N/Si in the film and a lower hydrogen content. We attribute these results to the low heat capacity and large specific surface area of the nanoparticles, which enabled active chemical reactions on their surface in the plasma.

DOI： 10.1016/j.mssp.2023.107613

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

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Plasma irradiation leads not only active species, but also reactive chemical species, ultraviolet light, electric fields, magnetic fields, and shock waves. To date the effects of reactive chemical species have been mainly discussed. To understand the biological effect caused by an electric potential induced with an atmospheric-pressure plasma, the behavior of cell stimulated by electric potential was investigated using HeLa cell. The cell concentration assay revealed that less than 20% of cells inactivated by potential stimulation and the remained cells proliferate afterward. Fluorescent microscopic observation revealed that potential stimulation is appreciable to transport the molecules through membrane. These results show that potential stimulation induces intracellular and extracellular molecular transport, while the stimulation has a low lethal effect. A possible mechanism for this molecular transport by potential stimulation was also shown using numerical simulation based on an equivalent circuit of the experimental system including adhered HeLa cell. The potential formation caused by plasma generation is decisive in the contribution of plasma science to molecular biology and the elucidation of the mechanism underlying a biological response induction by plasma irradiation.

DOI： 10.1038/s41598-023-42976-4

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Materials Science in Semiconductor Processing  

We experimentally report the control of structural inhomogeneity and magnetic properties of Co-doped ZnO films using nitrogen mediated-crystallization. The ZnO:CoN were grown on a silicon substrate at room temperature by RF-magnetron sputtering using nitrogen and followed by a post-annealing treatment for 3 hours at 400 °C, 600 °C, 800 °C and 1000 °C in the air. This method induces changes in inhomogeneity properties comprised by microstructure and stoichiometry of each film, which are confirmed by X-ray diffraction, thermal desorption, and X-ray fluorescence measurements. The difference in inhomogeneity has led to the transformation in the magnetic properties. Films annealed at 400 °C, which showed the highest inhomogeneity, exhibited superparamagnetic-ferromagnetic properties. In contrast, all the other films exhibited diamagnetic properties. Increasing the post-annealing temperature above 400 °C reduces inhomogeneities indicated by improved grain size, decreased impurities, and lattice parameters and stoichiometry of ZnO:CoN films approached those of pure ZnO. Our present results will contribute to control the inhomogeneity of ZnO:Co films to improve magnetic properties at room temperature.

DOI： 10.1016/j.mssp.2023.107503

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DOI： 10.35848/1347-4065/acebfb

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

CO2 methanation is an effective technology for CO2 reduction. Generally, methanation reactions are accelerated using thermal catalysts. However, the temperature control is difficult because CO2 methanation is an exothermic reaction, and the catalyst is deactivated by overheating. Plasma catalysis can solve this problem by driving this reaction at lower temperatures. Therefore, in this study, we investigated the contribution of the active species generated in the plasma to CO2 methanation. We found that the density of active species is linearly related to the power density, and in particular, the CH4 generation rate is determined by the CO-derived active species, not the H-derived active species. Furthermore, with an increase in the catalyst temperature, a new reaction pathway for CH4 production is added. The results of this study contribute to the understanding of the relationship between the active species produced in plasma and CO2 methanation.

DOI： 10.35848/1347-4065/acdad9

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Frontiers in Physics  

Colossal research on CO2 and N2 conversion using non-thermal plasma (NTP) technology has been ongoing since many years. The primary focus is on CO and NH3 production through CO2 and N2 conversion, respectively, with high conversion efficiency and low energy consumption with or without catalysts. Although in the present study, we propose that the NTP can assist in converting CO2 and N2 to plant nutrients in the form of plasma-treated/activated water. We used a homemade streamer plasma device and produced plasma-activated water (PAW) using CO2 and N2 feed gas, CO2-activated water (CAW) and N2-activated water (NAW). Later, we used CAW and NAW to treat the radish seeds and evaluate the germination rate, germination percentage, and seeding growth. To understand the chemical changes in PAW after the NTP treatment, we performed a chemical analysis to detect NO2¯, NO3¯, NH4+, and H2O2 along with the PAW pH and temperature shift. Additionally, to understand the other species produced in the gas phase, we simulated chemical reactions using COMSOL Multiphysics® software. Our results show that NOx and NHx species are less produced in CAW than in NAW, but CO2-generated PAW offers a significantly more substantial effect on enhancing the germination rate and seeding growth than NAW. Therefore, we suggested that CO and H2O2 formed during CAW production trigger early germination and growth enhancement. Furthermore, the total plasma reactor energy consumption, NO3¯ and NH4+ selective production percentage, and N2 conversion percentage were calculated. To our best knowledge, this is the first study that uses plasma-assisted CO2 conversion as a nutrient for plant growth.

DOI： 10.3389/fphy.2023.1211166

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

Methanation of CO2 is a key technology to realize a sustainable society. The reactions should be driven at a lower temperatures from the viewpoint of catalyst stability. Methanation with plasma catalysis can drive reactions at lower temperature than thermal catalysis. However, the reaction mechanism is little understood due to the complexity of the interactions. In this study, we investigated the power and pressure dependence of the methanation efficiency when only plasma is used as a fundamental research. We discuss how these parameters change the vibrational temperature and active species density and affect the methanation efficiency using optical emission spectroscopy.

DOI： 10.35848/1347-4065/acc66a

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

The inverted Stranski–Krastanov (SK) mode is useful for heteroepitaxial growth of single-crystalline ZnO films on 18% lattice-mismatched sapphire substrates. We studied the role of nitrogen atoms during fabrication of a three-dimensional island-shaped buffer layer. We found an unprecedented maximum in the substrate temperature dependence of the density of the crystal grains, which facilitated the growth of flat ZnO layers. To reveal the mechanism of the aforementioned maximum, we measured the absolute N atom density in Ar/N2 sputtering plasma [N]plasma by vacuum-ultraviolet absorption spectroscopy. At [N]plasma = 2.2 × 1010 cm−3, we fabricated a ZnO film with a pit-free surface, attributable to the large surface reaction probability and small incorporation ratio of N atoms into the ZnO films. To describe these results, we applied an Ising model. The analytical calculations provide insights for inverted SK mode and clearly reveal the critical effects of the flux densities. Graphical abstract: [Figure not available: see fulltext.]

DOI： 10.1557/s43578-022-00886-7

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

We have investigated the effects of amplitude modulation (AM) discharges especially in differences of AM frequency on plasma parameters such as electric field, electron density, electron temperature, ion energy distribution function (IEDF), and ion angular distribution function (IADF) of capacitively coupled AM discharge Ar plasma using a Particle-in-cell/Monte Carlo collision (PIC-MCC) model. The electron density and the kinetic energy of ions incident on the grounded electrode oscillate periodically with the AM frequency. The oscillation amplitude of the electron density in the central plasma region between the electrodes decreases with increasing the AM frequency above 5 kHz. On the other hand, the peak energy of IEDF decreases with increasing the AM frequency above 500 kHz. Thus, the AM frequency is a good tuning knob to control such plasma parameters.

DOI： 10.1557/s43580-022-00417-w

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

(ZnO)X(InN)1-X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (Rq) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively. Rq on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature. Graphical abstract: [Figure not available: see fulltext.]

DOI： 10.1557/s43578-022-00827-4

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Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

Ferrites are promising photocatalysts as they absorb a considerable fraction of visible light. Herein, a novel in-situ simple tactic polycondensation method was used to produce n-type porous graphitic carbon nitride nanosheets over p-type CaFe2O4 particles resulting in a “quasi-polymeric” heterojunction. An interfacial electron trap state was created, as represented by an energy-resolved distribution of electron trap patterns in the g-C3N4/CaFe2O4, which traps excited electrons and prevents charge carrier recombination. When the CaFe2O4 precursor content in the g-C3N4/CaFe2O4composite was optimized, the degradation rates of ciprofloxacin and phenol are 2.3 and 2.1-fold higher in comparison to pristine g-C3N4, respectively. The g-C3N4/CaFe2O4 composite efficiently absorbed visible light and could separate and transport charge carriers through the p-n heterojunction. The efficient interfacial charge transport and separation achieved in the composite were validated using photoluminescence spectra and photoelectrochemical characterizations. Based on scavenger studies and electron spin resonance analysis, the most active radical species for the aforementioned pollutant degradation are holes and superoxide anion radicals. Mott-Schottky measurements and X-ray photoelectron spectroscopy confirmed the photocatalytic reaction mechanism is a Z-scheme charge carrier transport route based on the p-n heterojunction. Therefore, the g-C3N4/CaFe2O4 heterojunction offers a lot of promise for pollutant degradation that is both efficient and long-term.

DOI： 10.1016/j.cej.2022.139758

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Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (other academic)  

Language：English   Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

Abstract

We investigated the effects of amplitude modulated (AM) capacitively coupled Ar discharge plasma on the ion energy distribution function (IEDF) and the ion angular distribution function (IADF) incident on electrodes using the particle-in-cell/Monte Carlo collision model. For AM discharge, the electron density and electron temperature and the kinetic energy and angle of ions incident on the ground electrode change periodically with AM frequency, whereas ones for continuous wave discharge are almost constant. For AM discharge, the plasma had hysteresis characteristics. The peak energy of IEDF varies from 53 to 135 eV and the FWHM of IADF varies from 1.82 to 3.34 degrees for gas pressure 10mTorr, the peak-to-peak input voltage 400 V and AM level of 50%. The variation width of the peak energy of IEDF and FWHM of IADF increases with the AM level. These effects of AM method discharge are more noticeable at lower pressures. Thus, the AM discharge offers a way to control simultaneously IEDF and IADF, which opens a new avenue for plasma processes such as an ALD-like PECVD.

DOI： 10.35848/1347-4065/ac7626

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Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1063/5.0097691

Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1063/5.0097691

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

We investigated the Ar mixture ratio dependence of the high-energy electron behaviors in capacitively coupled Ar+Ne plasmas using Optical Emission Spectroscopy (OES) and Phase-Resolved Optical Emission Spectroscopy (PROES) methods. OES measurements showed that optical emission intensities of Ar and Ne decreased as Ar mixture ratio increased, which implied decreases in the excitation rates of Ar and Ne. The spatio-temporal distribution of the Ar I 2p1 excitation rate was measured using the PROES method. These measurements showed the Ar I 2p1 excitation rate decreased as the Ar mixture ratio increased, which was consistent with the OES results. These results implied that the collision frequency between electrons and neutral particles increased with increase in Ar mixture ratio. In addition, the sheath expansion width in one RF cycle became small with increasing Ar mixture ratio, which led to a weakening of the effect of stochastic heating and a decrease of the electron temperature.

DOI： 10.1557/s43580-022-00306-2

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

Abstract

Discharge plasma irradiates seeds with reactive oxygen and nitrogen species (RONS). However, RONS introduced in seeds by plasma irradiation have not been successfully detected thus far. This study provides experimental evidence that nitrate ion NO₃⁻ is introduced in lettuce seeds as RONS upon irradiation with atmospheric-pressure air dielectric barrier discharge plasma. Plasma irradiation for 5 min promotes seed germination. The components of the plasma-irradiated seeds were examined using electrospray ionization quantum mass spectrometry (ESI QMS), which revealed that the plasma irradiation introduced an ion with a mass of 62 m/z in detectable amounts. This ion was identified as NO₃⁻ by liquid chromatography (LC), multiple wavelength detector (MWD), and LC-ESI QMS. A one-dimensional simulation at electron temperature T_e = 1 eV, electron density N_e = 10¹³/m³, and gas temperature T_g = 300 K indicated the introduction of NO₃⁻, involving nitric oxide NO. NO₃⁻ is one of the most important ions that trigger signal transduction for germination when introduced in seeds. The scanning electron microscopy (SEM) images revealed that there was no change on the surface of the seeds after plasma irradiation. Plasma irradiation is an effective method of introducing NO₃⁻ in seeds in a dry process without causing damage.

DOI： 10.1038/s41598-022-16641-1

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：SPRINGER HEIDELBERG  

Applicability of precise Raman spectral analysis of a-C:H films deposited using a plasma chemical vapor deposition (CVD) method has been discussed based on the sensitivity to initial conditions in peak separation. The spectral analysis offers to deconvolute the spectra into five peaks, while the as-deposited films prepared by plasma CVD is difficult to the five-peak separation. We found the peak position and the peak height ratio of the D-band to the G(+)-band can be employed to discuss the structure of the as-deposited films. We examined the structural difference between the films deposited at the powered electrode and that at grounded electrode. We found graphene nanoribbon-like structures may be formed in the films deposited on the grounded substrate. This result suggests that the substrate position is an important factor to form the graphene nanoribbon-like structure.

DOI： 10.1557/s43580-022-00310-6

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

Recently, non-thermal plasma technology has been frequently used for wastewater treatment. Plasma technology uses the effect of high-energy electrons, reactive species, ultraviolet light, free radicals, and pyrolysis to treat wastewater. Although in many cases, only the use of non-thermal plasma alone is not successful in degrading the complex organic wastes. This might be because of complexity in wastewater or not appropriate plasma device for wastewater treatment, or improper use of plasma-generated species that plays a critical role in organic waste degradation. To increase the degradation efficiency and reduce treatment time, the combination of non-thermal plasma and catalysts (homogeneous and heterogeneous) improves pollutant removal. This review includes the different non-thermal plasma systems and their action on decolorizing or degradation of dyes, degradation of phenolic pollutants, and degradation of pharmaceutical products, including antibiotics and other volatile organic solvents (VOC’s) with and without catalyst. Finally, probable mechanisms and suggestions to improve the wastewater treatment using non-thermal plasma were put forward. This review aims to help researchers understand the role of treatment time, feed gases, and catalysts on the degradation of organic wastes and looks forward to all possible developments in this field.

DOI： 10.1007/s41614-022-00077-1

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Agronomy  

To meet the needs of the hungry population, it is critical to boost agricultural product production while minimizing contaminated waste. The use of two nonthermal technologies, pulsed electric field (PEF) and nonthermal plasma (NTP), is increasing every day. As both PEF and NTP are relatively newer areas, there is limited knowledge about these two technologies and their modes of action. Studies showed that PEF treatment on the plant seeds helps germination and seedling growth. The positive impact of PEF intensity is highly dependent on the seed coat type and plant species. Another nonthermal technology, NTP, affects seed germination, seedling growth, yield, and resilience to abiotic stress when generated at varying pressures with and without different feed gases. Early germination, germination rate, and germination percentage were all improved when the seedlings were treated with NTP. Similarly to the PEF treatment, NTP had a negative or no effect on germination. This review examined the effects of PEF and NTP on seed germination and ana-lyzed the situation and mechanism behind the positive or negative effect. Deactivation of proteins and enzymes to extend the shelf life of beverages is another prominent application of PEF and NTP. The interaction of PEF and NTP with proteins aids in understanding the microscopic mechanism of these technologies. Therefore, we covered in this review the potential structural and functional changes in proteins/enzymes as a result of PEF and NTP, as well as a comparison of the benefits and drawbacks of these two technologies.

DOI： 10.3390/agronomy12020482

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We have succeeded in epitaxial growth of high-quality Zn1−xMgxO films of x = 0.04–0.33 on 18%-lattice mismatched sapphire substrates using magnetron sputtering. The films have grown in inverted Stranski-Krastanov (inverted SK) mode, where a buffer layer consisting of three-dimensional islands initially forms and a relaxed two-dimensional layer subsequently grows on the buffer layer. The resultant films have flat surfaces with root-mean-square roughness of 0.43–0.75 nm and are of high-crystal qualities even for large Mg contents; the full widths at half maximum of (0002) x-ray rocking curves are 0.05° (x = 0.33) and 0.07° (x = 0.14). Furthermore, we observed that the optical absorption edge shifts continuously toward the shorter wavelength with increasing x, and the band gap has been tuned from 3.5 to 4.3 eV. These results show that the inverted SK mode is useful for fabricating high-quality Zn1−xMgxO films with wide-range tunability of band gaps. Graphical abstract: [Figure not available: see fulltext.]

DOI： 10.1557/s43580-022-00234-1

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

CO2 methanation can be a key technology for realizing a sustainable society. CH4 is used as an energy carrier and raw material for chemical products, thereby contributing to the reduction of CO2 emissions. Methanation with plasma catalysis lowers the process temperature, which can improve the throughput and stability. In this study, we investigated the effect of the gas flow rate and the discharge volume on CO2 methanation, using a low-pressure capacitively coupled plasma reactor. Higher gas flow rates can increase the rate of CO2 throughput, but the CH4 selectivity decreases owing to the reduced transportation rate of the reactants to the catalyst surface. Increasing the discharge volume is effective in improving the transportation rate. This study suggested that the structure of the reactor significantly affects the CH4 generation rate.

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DOI： 10.1615/PlasmaMed.2020036353

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DOI： 10.1039/D1RA04441A

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DOI： 10.1016/j.tsf.2021.138701

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DOI： 10.35848/1347-4065/abe47d

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DOI： 10.1021/acsagscitech.0c00070

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DOI： 10.1038/s41598-021-81175-x

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DOI： 10.1016/j.diamond.2020.108050

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DOI： 10.35848/1347-4065/abbb20

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DOI： 10.3390/pr8081002

Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

DOI： 10.1007/s11090-024-10500-9

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Publisher：IEEE Sensors Letters  

Nonthermal atmospheric-pressure discharge plasma is considered important for sterilization. Reactive species, such as active oxygen species, radicals, and nitrate ions, generated by the discharge plasma damage the target bacterial cell wall/membrane and DNA. Several plasma sterilization methods have been proposed, including dielectric barrier discharge (DBD). To achieve effective sterilization, it is necessary to evaluate their characteristics using many parameters. This letter aims to demonstrate a proof-of-concept of a novel biological indicator for plasma sterilization. A biological indicator is used to verify sterilization outcomes. We employ DNA-labeled microbeads as biological indicators for the rapid visualization of plasma sterilization. This is based on our recently developed method for visual detection of DNA molecules. If plasma-derived factors cause the degradation of the DNA attached to the microbeads, this can be confirmed by visualization. Herein, we present the correlation between sterilization and visualization in the case of DBD. This method offers a rapid evaluation of plasma sterilization because it easily and quickly determines the sterilization capability of the plasma.

DOI： 10.1109/LSENS.2024.3420437

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Diluted magnetic semiconductors (DMS) have attracted interest for the potential applications of spintronic devices. The origin of the temperature dependence of their ferromagnetism has been debated and has not been concluded yet. A potential conclusion is that nanoscale inhomogeneity largely affects the temperature dependence of the magnetization in DMS even if the structure and compositions are not largely different. We examined this hypothesis by implementing nitrogen-mediated crystallization consisting of sputtering deposition of amorphous film and solid-phase crystallization by thermal annealing. A series of samples with different inhomogeneities were prepared by changing the annealing time. No significant changes in the composition and the structure were observed after annealing for various times, while significant enhancements were observed in the coercivity, blocking temperature, and grain size. These results provide clear understanding in the temperature dependence of the ferromagnetism in DMS and direct evidence of the potential conclusion on the long-lasting debate. Graphical abstract: (Figure presented.)

DOI： 10.1557/s43580-024-00907-z

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Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

Abstract

Large-scale fabrication of thulium iron garnet (TmIG) films on gadolinium gallium garnet (GGG) substrates, with a total area of 25 cm², has been demonstrated by rotating substrate holders during on-axis sputtering. By optimizing the growth parameters based on the pressure and flow rate of the oxygen ratio, a Tm/Fe ratio of 0.65 was obtained, which is close to the stoichiometry of TmIG. The increase in post-annealing temperature has induced the growth of the TmIG structure by the strain of the lattice constant mechanism. At the highest post-annealing temperature, the crystal structure of TmIG (444) and the perpendicular magnetic anisotropy (PMA) were obtained. This result demonstrates the potential method for large-scale fabrication of TmIG film with PMA.

DOI： 10.35848/1347-4065/ad5aff

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Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ad5aff/pdf

Publishing type：Research paper (scientific journal)   Publisher：AIP Publishing  

We have fabricated smooth-surfaced amorphous In2O3:Sn (a-ITO) films at a high temperature of 550 °C, far above the typical crystallization threshold of 150 °C for ITO films. This achievement has been made possible by intentionally introducing N2 into the sputtering atmosphere, which maintains a low N atom incorporation of only a few atomic percent within the films. Positioned within ZONE-T of the Thornton diagram (higher-temperature region characterized by high film density), our method allows the preparation of films with superior film density about 6.96 g/cm3, substantially exceeding the density of 6.58 g/cm3 for conventional a-ITO films fabricated under ZONE-1 (low-temperature region) and approaching the bulk crystal density of In2O3 at 7.12 g/cm3. The films also feature a high carrier density of 5 × 1020 cm−3 and a remarkably low resistivity of 3.5 × 10−4 Ω cm, comparable to those of polycrystalline films. The analysis via vacuum-ultraviolet absorption spectroscopy on N and O atom densities in the plasma suggests that amorphization is primarily caused not by N atoms incorporated in the films but by those temporally adsorbed on the film surface, inhibiting crystal nucleation before eventually desorbing. Our findings will pave the way not only for broader applications of a-ITO films but also for the design of other amorphous materials at temperatures beyond their crystallization points.

DOI： 10.1063/5.0211090

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Publisher：Materials Research Express  

ZnO-AlN pseudo-binary amorphous alloys (a-ZAON hereinafter) with tunable band gaps in the deep ultraviolet (DUV) region have been synthesized using magnetron sputtering. The miscibility gap between ZnO and AlN has been overcome using room-temperature sputtering deposition, leveraging the rapid quenching abilities of sputtered particles to fabricate metastable but single-phase alloys. X-ray diffraction patterns and optical transmittance spectra revealed that the synthesized films with chemical composition ratios of [Zn]/([Zn] + [Al]) = 0.24-0.79 likely manifested as single-phase of a-ZAON films. Despite their amorphous structures, these films presented direct band gaps of 3.4-5.8 eV and thus high optical absorption coefficients (105 cm−1). Notably, the observed values adhered to Vegard’s law for crystalline ZnO-AlN systems, implying that the a-ZAON films were solid solution alloys with atomic-level mixing. Furthermore, atomic force microscopy analyses revealed smooth film surfaces with root-mean-square roughness of 0.8-0.9 nm. Overall, the wide-ranging band gap tunability, high absorption coefficients, amorphous structures, surface smoothness, and low synthesis temperatures of a-ZAON films position them as promising materials for use in DUV optoelectronic devices and power devices fabricated using large-scale glass and flexible substrates.

DOI： 10.1088/2053-1591/ad4f57

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Scopus

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Applied Physics Express  

The present study focused on CO2 capture, storage, and conversion through the innovative integration of plasma-ionic liquid (IL) technology. For the first time, we employed plasma-IL technology to confront climate change challenges. We utilized 1-Butyl-3-methylimidazolium chloride IL to capture and store CO2 under atmospheric pressure, and subsequently employed plasma to induce the transformation of IL-captured CO2 into CO. Furthermore, we performed computer simulations to enhance our understanding of the CO2 and CO capture processes of water and IL solutions. This comprehensive approach provides valuable insights into the potential of plasma-IL technology as a viable solution for climate change.

DOI： 10.35848/1882-0786/ad33ea

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Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：Smart Processing Society for Materials, Environment & Energy (High Temperature Society of Japan)  

 Carbon dioxide reduction is one of the key technologies for achieving a sustainable society. In this study, plasma catalysis were used to hydrogenate carbon dioxide to produce methane. Plasma catalysis have attracted attention in recent years as a technology promoting a reaction at lower temperatures by various synergistic effects between plasma and catalysts. In this study, molecular sieve with a pore diameter of 3 Å was used as a catalyst and its role was investigated. The results showed that: 1. molecular and atomic adsorption functions of molecular sieves are useful to inhibit reverse reactions; 2. the influence of molecular sieves becomes stronger at higher pressures, resulting in higher methane production; 3. energetic reactive particles derived from hydrogen deactivate molecular sieves; 4. molecules adsorbed on molecular sieve can be recycled by hydrogen plasma irradiation.

DOI： 10.7791/jspmee.13.31

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Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.35848/1347-4065/ace831

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Language：English   Publishing type：Research paper (scientific journal)  

DOI： https://doi.org/10.1016/j.cej.2022.139758

Publisher：Plasma Medicine  

Seed treatment with non-thermal plasma has seen a tremendous increase in both direct and indirect applications recently. In this review, we examined the effects of direct plasma irradiation, plasma-activated water (PAW), plasma-activated Ringer’s lactate solution, and plasma-treated soil on seeds, resulting in positive, negative, and neutral changes. Furthermore, we will compare the impact of pressure and feed gases on seed germination and seedling growth. Addition-ally, we focused on the types of reactive oxygen and nitrogen species (RONS) and their concentrations produced in the gas and liquid phases, as these play a crucial role in germination percentage and seedling growth. In conclusion, we find that plasma agriculture’s success is contingent on seed morphology, the types and concentrations of reactive species, and specific plasma characteristics.

DOI： 10.1615/PlasmaMed.2023050454

Scopus

Language：English   Publisher：The Japan Society of Vacuum and Surface Science  

<p>Amorphous carbon (a-C(:H)) thin films have been studied in a wide range of fields as protective films for automotive parts, hard masks for semiconductor device fabrication, and biocompatible films for medical devices due to their excellent characteristics. In particular, mechanical properties (film stress and fracture toughness) related to film delamination are important because they are related to the durability of the films, which in turn are related to film stress and adhesion strength. Recently, we have shown that the introduction of carbon nanoparticles (CNPs) between two layers of a-C:H thin films reduces film stress[1]. In this study, we evaluated other properties of the CNP-inserted sample and examined the effect of CNPs on the mechanical properties of the film toward the practical stage.</p><p>Sandwich structure films were fabricated using a capacitively coupled plasma-enhanced chemical vapor deposition (PECVD) system [1]. Ar and CH4 gases were introduced from the top at 19 sccm and 2.6 sccm, respectively. The thickness of the first and second layers was 154 nm. For the nanoindentation test, a nanoindentation tester (ENT-1100a) was employed and a Berkovich indenter was used.</p><p></p><p>The load-unloading curve by nano-indentation showed a typical curve at 5 mN, and a step in the curve occurred at over 8 mN, and SEM images of the indentation showed that the membrane peeled off in a circular shape when the step occurred. EDS analysis of the peel scar revealed that the peel occurred at the interface between the first and second layers. In addition, the fracture toughness of the film was determined from the SEM images of the delamination traces and the load-unloading curve at the time of step generation, and it decreased with increasing Cp in the region where the film stress was constant for the CNP coverage. These results suggest that CNP coverage has a negative correlation with fracture toughness and that there is an optimum value for improving mechanical properties. Other properties will be discussed in detail in the presentation.</p><p></p><p>[1] S.H. Hwang et al., Jpn. J. Appl. Phys. 59 100906, (2020).</p>

DOI： 10.14886/jvss.2023.0_1ga06

CiNii Research

Language：English   Publisher：AIP Publishing  

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)  

DOI： https://doi.org/10.1038/s41598-022-16641-1

Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

Heteroepitaxial growth of single-crystalline zinc oxide (ZnO) films on a c-plane sapphire substrate is an important technology for electronics and optoelectronic devices. Recently, the inverted Stranski-Krastanov (SK) mode has been demonstrated, and it has realized the heteroepitaxial growth of ZnO films on a sapphire substrate by sputtering. In this mode, a 10 nm-thick buffer layer consisting of three-dimensional islands (3D buffer layers) initially forms and relaxes the strain, and then, a two-dimensional ZnO film (2D layer) grows involving small strain. To clarify the correlation between the structural properties of the 3D buffer layers and the 2D layer, we introduce a figure of merit (FOM) of ZnO films: the reciprocal of the product of the full width at half-maximum (FWHM) of the (002) and (101) planes of X-ray rocking curves (XRCs) and root-mean-square (RMS) roughness. We find that the FOM of the 2D layers correlates with the RMS roughness, the in-plane orientation, and the lateral correlation length ζ of the surfaces of the buffer layers. We observe a surprisingly high correlation coefficient of 0.97. Our results imply that on the buffer layers with larger ζ, adatoms more easily reach the thermodynamically favored lattice positions. Thus, high-quality single-crystalline ZnO films, where the (002) plane XRC-FWHM and the RMS roughness are 0.05° and 1.5 nm, respectively, are grown on the buffer layers with a large ζ of 13.7 nm. This finding provides a useful tool for understanding the mechanism of the inverted SK mode.

DOI： 10.1021/acs.cgd.2c00145

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Language：English   Publishing type：Research paper (scientific journal)  

Soil fertility management is of great importance for farmers. The use of synthetic nitrogen (N)-fertilizer increased by 20 fold in the last 50 years to feed the increasingly hungry population. This study aims to enrich the plant soil with nitrogen content (NH4NO3 fertilizer in soil) using the low-temperature and low-pressure plasma [without H2 and catalyst]. Subsequently, we used plasma N-enriched soil for plant (radish and tomato) growth. We investigated the germination percentage, seedling growth, seedling weight, phytohormones and antioxidant activity of radish and tomato plants after treatment with plasma N-enriched soil and compared with control soil and soil + commercial N-fertilizer. The plasma N-enriched soil treatment results in significant growth enhancement for both radish and tomato plants. Further, substantial changes in phytohormone and antioxidant levels were observed for the plants grown in plasma N-enriched soil compared to control soil and soil + commercial N-fertilizer. The energy consumption (EC) for total N-fixation was 12 MJ mol−1. EC for ammonia and nitrate fixation was 17 and 41 MJ mol−1, respectively, without H2 gas. Further to understand the plasma chemistry, we performed 1D simulation using COMSOL Multiphysics® software. This study showed that direct N-fixation in the soil by plasma could be used as fertilizer for the plants and open a new window for future decentralized N-fertilizer production at the farm site.

DOI： 10.1039/D1RA04441A

Language：English   Publishing type：Research paper (scientific journal)  

As the application of nanotechnology increases continuously, the need for controlled size nanoparticles also increases. Therefore, in this work, we discussed the growth mechanism of carbon nanoparticles generated in Ar+CH4 multi-hollow discharge plasmas. Using the plasmas, we succeeded in continuous generation of hydrogenated amorphous carbon nanoparticles with controlled size (25–220 nm) by the gas flow. Among the nanoparticle growth processes in plasmas, we confirmed the deposition of carbon-related radicals was the dominant process for the method. The size of nanoparticles was proportional to the gas residence time in holes of the discharge electrode. The radical deposition developed the nucleated nanoparticles during their transport in discharges, and the time of flight in discharges controlled the size of nanoparticles.

DOI： 10.3390/pr9010002

Language：English   Publishing type：Research paper (scientific journal)  

A nutrient solution treatment system using corona plasma is developed for practical use in hydroponics. A gas-liquid separated reactor and a high voltage power supply based on a 20 kHz inverter neon-transformer are developed to archive the treatment with high energy efficiency, a low initial cost and a low running cost. The performance of the system on bacteria inactivation in the nutrient solution is evaluated in a continuous treatment system operation. The results show that the standard plate count for background microflora and R. solanacearum is drastically reduced by the plasma treatment and is not detected after 8 days treatment. The nutrient solution is decontaminated by 4 log cycle with plasma treatment under the continuous operation condition.

DOI： 10.1016/j.elstat.2017.12.006

Language：English   Publishing type：Research paper (scientific journal)  

Language：English  

Language：English   Publishing type：Research paper (scientific journal)  

An ac electric field (acEF) application technology has been reported as a principle technique for food preservation. With this method, conformational changes in the protein molecules of food materials may be induced. Conformational changes were experimentally examined using bovine serum albumin (BSA) as a model protein using an acEF technology. The amplitude of acEF was 66.7 kV/m. BSA with acEF (ac-BSA) and BSA without the ac field (n-BSA) were trypsinized under the same conditions. The derived peptides were compared by using sodium dodecyl sulfate polyacrylamide gel electrophoresis patterns. Formation of tryptic peptides was increased in n-BSA, and trypsin digestion was suppressed in ac-BSA. These results indicate that conformational changes in BSA molecules were induced by acEF application.

DOI： 10.1109/TPS.2017.2657748

Language：English   Publishing type：Research paper (scientific journal)  

In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.

DOI： 10.1109/TDEI.2013.004085

Language：English   Publishing type：Research paper (scientific journal)  

This paper reports the influence of dc electric field on plant growth. We used daikon radish as the sample. Seeds of the daikon radish were grown under two conditions; one is under dc electric fields, and the other is without electric fields. We have confirmed the following: 1. The application of dc electric field improves the germination rate. 2. The dc electric field increases the length and the weight of the sample. 3. However, after removal of water by vacuum treatment, the weight of the sample subjected to the dc electric fields is lower than that of the sample not subjected to electric field. This result suggests that the dc electric field accelerates the growth of the plant; it does not increase the real plant weight, but just improves the stem elongation by water absorption, and encourages the consumption of substances stored in the seed. These effects of the dc electric field are similar to those of Gibberellin phytohormones.

DOI： 10.1109/TDEI.2012.6396985

Event date： 2020.8

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Venue：アイーナ・いわて県民情報交流センター   Country：Japan  

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Venue：九州大学伊都キャンパス   Country：Japan  

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Venue：九州大学伊都キャンパス   Country：Japan  

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Venue：九州大学伊都キャンパス   Country：Japan  

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Venue：九州大学伊都キャンパス   Country：Japan  

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Venue：Hotel Zuiderduin, Egmonf aan Zee   Country：Netherlands  

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Venue：ウィーン工科大学   Country：Austria  

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Venue：アルカス佐世保   Country：Japan  

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Venue：上智大学   Country：Japan  

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Venue：上智大学   Country：Japan  

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Venue：上智大学   Country：Japan  

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Venue：岐阜大学   Country：Japan  

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Language：Japanese   Presentation type：Oral presentation (general)  

Venue：名古屋大学   Country：Japan  

Event date： 2023.2

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2023.1 - 2023.2

Language：English   Presentation type：Oral presentation (general)  

Venue：Hotel Sorea TRIGAN, Štrbské Pleso, Slovakia  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2023.1

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：九州大学筑紫キャンパス   Country：Japan  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：九州大学筑紫キャンパス   Country：Japan  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：九州大学筑紫キャンパス   Country：Japan  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：九州大学筑紫キャンパス   Country：Japan  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：九州大学筑紫キャンパス   Country：Japan  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：九州大学筑紫キャンパス   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.12

Language：English   Presentation type：Oral presentation (general)  

Venue：横浜市産業貿易センタービル   Country：Japan  

Event date： 2022.11

Language：English   Presentation type：Oral presentation (general)  

Venue：大分大学   Country：Japan  

Event date： 2022.11

Language：English   Presentation type：Oral presentation (general)  

Venue：大分大学   Country：Japan  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：大分大学   Country：Japan  

Event date： 2022.11

Language：English   Presentation type：Oral presentation (general)  

Venue：大阪国際会議場   Country：Japan  

Event date： 2022.11

Language：English   Presentation type：Oral presentation (general)  

Venue：大阪国際会議場   Country：Japan  

Event date： 2022.11

Language：English   Presentation type：Oral presentation (general)  

Venue：指宿市白水館   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.10

Language：English   Presentation type：Oral presentation (general)  

Venue：仙台国際センター   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：東北大学   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：札幌コンベンションセンター   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：名古屋大学   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：名古屋大学   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：名古屋大学   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：名古屋大学   Country：Japan  

Event date： 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：名古屋大学   Country：Japan  

Event date： 2022.8 - 2022.9

Language：English   Presentation type：Oral presentation (general)  

Venue：小樽経済センター   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.8

Language：English   Presentation type：Oral presentation (general)  

Venue：九州大学医学部百年講堂   Country：Japan  

Event date： 2022.7

Language：English   Presentation type：Oral presentation (general)  

Venue：OIST   Country：Japan  

Event date： 2022.6

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：佐賀大学   Country：Japan  

Event date： 2022.6

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：佐賀大学   Country：Japan  

Event date： 2022.6

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：佐賀大学   Country：Japan  

Event date： 2022.6

Language：Japanese  

Venue：佐賀大学   Country：Japan  

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Event date： 2022.6

Language：Japanese  

Venue：佐賀大学   Country：Japan  

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Event date： 2022.6

Language：Japanese  

Venue：佐賀大学   Country：Japan  

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Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2022.5

Language：English  

Venue：オンライン  

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Event date： 2022.5

Language：English  

Venue：オンライン  

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Event date： 2022.5

Language：English  

Venue：オンライン  

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Event date： 2022.5

Language：English  

Venue：オンライン  

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Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English   Presentation type：Oral presentation (general)  

Venue：ホノルル  

Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.5

Language：English  

Venue：ホノルル  

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Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

Event date： 2022.3

Language：Japanese  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

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Event date： 2022.3

Language：Japanese  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

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Event date： 2022.3

Language：Japanese  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

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Event date： 2022.3

Language：Japanese  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

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Event date： 2022.3

Language：Japanese  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

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Event date： 2022.3

Language：Japanese  

Venue：青山学院大学・ｵﾝﾗｲﾝ   Country：Japan  

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Event date： 2022.3 - 2021.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：English  

Venue：オンライン   Country：Japan  

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Event date： 2022.3

Language：English  

Venue：オンライン   Country：Japan  

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Event date： 2022.1

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese  

Venue：オンライン   Country：Japan  

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Event date： 2022.1

Language：Japanese  

Venue：オンライン   Country：Japan  

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Event date： 2022.1

Language：Japanese  

Venue：オンライン   Country：Japan  

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Event date： 2022.1

Language：Japanese  

Venue：オンライン   Country：Japan  

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Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Taiwan, Province of China  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Taiwan, Province of China  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.12

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.11

Language：English   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan