Faculty Profiles - KIYAMA HARUKI

Information

写真a

KIYAMA HARUKI

Organization

Faculty of Information Science and Electrical Engineering Department of I&E Visionaries Associate Professor
Joint Graduate School of Mathematics for Innovation （Concurrent）
School of Engineering Department of Electrical Engineering and Computer Science（Concurrent）
Graduate School of Information Science and Electrical Engineering Department of Electrical and Electronic Engineering（Concurrent）

Contact information

Tel

0928023594

Homepage

https://qu.ed.kyushu-u.ac.jp/

External link

Research Areas

Nanotechnology/Materials / Nanostructural physics

Degree

Ph. D.

Research History

大阪大学産業科学研究所

Research Interests・Research Keywords

Research theme： Single electron spin readout in semiconductor quantum dots

Keyword： Quantum dot, Electron spin

Research period： 2022.5

Awards

文部科学大臣表彰若手科学者賞

2022.4 文部科学省

Papers

Effects of carbon nanoparticle insertion on stress reduction in hydrogenated amorphous carbon films using plasma chemical vapor deposition

Ono S., Hwang S.H., Okumura T., Yamashita N., Kamataki K., Kiyama H., Itagaki N., Koga K., Shiratani M.

Diamond and Related Materials 150 2024.12 （ ISSN:09259635 ）

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Publisher：Diamond and Related Materials

Stress reduction in hydrogenated amorphous carbon (a-C:H) films is of considerable interest for improving their performance as protective films. Herein, we reduced the compressive stress of the films by inserting carbon nanoparticles (CNPs) between two a-C:H layers to form an a-C:H/CNP/a-C:H sandwich structure using a system of plasma chemical vapor deposition (CVD). We measured the deposition features of the CNPs via transmission electron microscopy (TEM) and assessed the dependence of the stress on the thickness of the second a-C:H layer as a parameter of surface coverage, C<inf>p</inf>. We represented the stress reduction as a function of C<inf>p</inf>; mean size of large CNPs, and thickness of the first and second a-C:H layers. In addition, the surface and film morphologies were investigated using atomic force microscopy (AFM) and cross-sectional scanning electron microscopy (SEM). Compared with films without CNPs, those containing CNPs with 8.9 % C<inf>p</inf> showed 36 % lower stress when the thickness of the second a-C:H layer was similar to that of the first (154 nm). The deposited CNPs exhibited two size groups, with mean sizes of the small and large CNPs of 5 and 16 nm, respectively. Stress reduction was strongly correlated with the distance between large CNPs. The insertion of CNPs between a-C:H films affects the surface morphology of the second layer, and the stress decreases when the growth stage of the film starts transitioning from three-dimensional (3D) to two-dimensional (2D).

DOI： 10.1016/j.diamond.2024.111654

Scopus
High-fidelity spin readout via the double latching mechanism

Kiyama, H; van Hien, D; Ludwig, A; Wieck, AD; Oiwa, A

NPJ QUANTUM INFORMATION 10 ( 1 ) 2024.10 （ eISSN:2056-6387 ）

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Publisher：Npj Quantum Information

Projective measurement of single-electron spins, or spin readout, is among the most fundamental technologies for spin-based quantum information processing. Implementing spin readout with both high-fidelity and scalability is indispensable for developing fault-tolerant quantum computers in large-scale spin-qubit arrays. To achieve high fidelity, a latching mechanism is useful. However, the fidelity can be decreased by spin relaxation and charge state leakage, and the scalability is currently challenging. Here, we propose and demonstrate a double-latching high-fidelity spin readout scheme, which suppresses errors via an additional latching process. We experimentally show that the double-latching mechanism provides significantly higher fidelity than the conventional latching mechanism and estimate a potential spin readout fidelity of 99.94% using highly spin-dependent tunnel rates. Due to isolation from error-inducing processes, the double-latching mechanism combined with scalable charge readout is expected to be useful for large-scale spin-qubit arrays while maintaining high fidelity.

DOI： 10.1038/s41534-024-00882-1

Web of Science

Scopus
Polarization-independent enhancement of optical absorption in a GaAs quantum well embedded in an air-bridge bull’s-eye cavity with metal electrodes

Sangmin Ji, Takeyoshi Tajiri, Xiao-Fei Liu, Haruki Kiyama, Akira Oiwa, Julian Ritzmann, Arne Ludwig, Andreas D Wieck, Satoshi Iwamoto

Japanese Journal of Applied Physics 62 ( SC ) SC1018 - SC1018 2023.4 （ ISSN:0021-4922 eISSN:1347-4065 ）

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Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

Electron spins in gate-defined quantum dots (QDs) formed in semiconductor quantum wells (QWs) are promising stationary qubits for implementing large-scale quantum networks in a scalable manner. One key ingredient for such a network is an efficient photon–spin interface that converts any polarization state of a flying photonic qubit to the corresponding spins state of the electron in gate-defined QDs. A bull’s-eye cavity is an optical cavity structure that can enhance the photon absorption of an embedded gate-defined QD without polarization dependence. In this paper, we report the successful fabrication of air-bridge bull’s-eye cavities with metal electrodes and demonstrate the nearly polarization-independent optical absorption of a GaAs QW embedded in the cavities. This work marks an important step toward realizing an efficient photon–spin interface using gate-defined QDs.

DOI： 10.35848/1347-4065/acac3a

Web of Science

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Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/acac3a/pdf
Anomalous Screening Effect of Superlattice-Doped GaAs/(Al,Ga)As Heterostructures under Illumination

Xiao-Fei Liu, Nikolai Spitzer, Haruki Kiyama, Arne Ludwig, Andreas D. Wieck, Akira Oiwa

PHYSICAL REVIEW APPLIED 19 ( 2 ) 2023.2 （ ISSN:2331-7019 ）

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Language：English Publishing type：Research paper (scientific journal) Publisher：AMER PHYSICAL SOC

The GaAs/(Al,Ga)As heterostructure with short-period superlattice (SPSL) doping possesses ultrahigh mobility of its two-dimensional electron gas by placing donors within the remote GaAs layers. Here, we investigate its magnetotransport property under a heavily doped situation. After long enough illumination at cryogenic temperature, the change of the electron concentration inside the quantum well (QW) is only 5.9%. Meanwhile, the quantum lifetime tq,QW of the electron shows an anomalous behavior. It increases slightly and then exhibits an exponential decay until saturation. This is different from the monotonic increase of tq,QW under illumination for the conventional doping situation. The increase of tq,QW origi-nates from the larger donor filling-fraction-enhanced screening effect. Meanwhile, the decrease of tq,QW may be caused by stronger scattering of ionized d+ states evolved from DX centers. The transfer of excess electrons between the AlAs layers can also cause the decrease of tq,QW. This work provides an insight into the mechanism of DX centers on the quantum transport properties of SPSL-doped heterostructures.

DOI： 10.1103/PhysRevApplied.19.024056

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Anomalous Screening Effect of Superlattice-Doped GaAs/(Al,Ga)As Heterostructures under Illumination Reviewed International journal

Xiao-Fei Liu, Nikolai Spitzer, Haruki Kiyama, Arne Ludwig, Andreas D. Wieck, and Akira Oiwa

Physical Review Applied 19 024056 2023.2

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Language：English Publishing type：Research paper (scientific journal)
Polarization-independent enhancement of optical absorption in a GaAs quantum well embedded in an air-bridge bull's-eye cavity with metal electrodes Reviewed International journal

Sangmin Ji, Takeyoshi Tajiri, Xiao-Fei Liu, Haruki Kiyama, Akira Oiwa, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck and Satoshi Iwamoto

Japanese Journal of Applied Physics 62 SC1018 2023.1

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Language：English Publishing type：Research paper (scientific journal)
Stress reduction of a-C:H films with inserting submonolayer of carbon nanoparticles

Shiratani Masaharu, Ono Shinjiro, Eri Manato, Okumura Takamasa, Kamataki Kunihiro, Yamashita Naoto, Kiyama Haruki, Itagaki Naho, Koga Kazunori

Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2023 ( 0 ) 1Ga06 2023 （ eISSN:24348589 ）

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Language：English Publisher：The Japan Society of Vacuum and Surface Science

Amorphous carbon (a-C(:H)) thin films have been studied in a wide range of fields as protective films for automotive parts, hard masks for semiconductor device fabrication, and biocompatible films for medical devices due to their excellent characteristics. In particular, mechanical properties (film stress and fracture toughness) related to film delamination are important because they are related to the durability of the films, which in turn are related to film stress and adhesion strength. Recently, we have shown that the introduction of carbon nanoparticles (CNPs) between two layers of a-C:H thin films reduces film stress[1]. In this study, we evaluated other properties of the CNP-inserted sample and examined the effect of CNPs on the mechanical properties of the film toward the practical stage.Sandwich structure films were fabricated using a capacitively coupled plasma-enhanced chemical vapor deposition (PECVD) system [1]. Ar and CH4 gases were introduced from the top at 19 sccm and 2.6 sccm, respectively. The thickness of the first and second layers was 154 nm. For the nanoindentation test, a nanoindentation tester (ENT-1100a) was employed and a Berkovich indenter was used.The load-unloading curve by nano-indentation showed a typical curve at 5 mN, and a step in the curve occurred at over 8 mN, and SEM images of the indentation showed that the membrane peeled off in a circular shape when the step occurred. EDS analysis of the peel scar revealed that the peel occurred at the interface between the first and second layers. In addition, the fracture toughness of the film was determined from the SEM images of the delamination traces and the load-unloading curve at the time of step generation, and it decreased with increasing Cp in the region where the film stress was constant for the CNP coverage. These results suggest that CNP coverage has a negative correlation with fracture toughness and that there is an optimum value for improving mechanical properties. Other properties will be discussed in detail in the presentation.[1] S.H. Hwang et al., Jpn. J. Appl. Phys. 59 100906, (2020).

DOI： 10.14886/jvss.2023.0_1ga06

CiNii Research
Micromagnet design for addressable fast spin manipulations in a 2 x 2 quantum dot array

Shungo Nakamura, Haruki Kiyama, Akira Oiwa

JOURNAL OF APPLIED PHYSICS 132 ( 22 ) 2022.12 （ ISSN:0021-8979 eISSN:1089-7550 ）

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Language：English Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

The scaling up of semiconductor quantum dots to two-dimensional arrays is attracting considerable interest for use in large-scale spin-based quantum computation. One of the fundamental technologies to be realized in the two-dimensional arrays of quantum dots is the coherent manipulations of individual electron spins. In this work, we report on a micromagnet design that generates stray magnetic fields that can be used for spin manipulations via electric dipole spin resonance in a 2 x 2 quantum dot array. We consider a micromagnet with lower symmetry than that typically used in the case of linear dot arrays and optimize its dimensions to produce a maximum stray field gradient while maintaining Zeeman splitting differences sufficiently large among the four dots to permit qubit addressability. The optimized field gradient is around 60% smaller than that used in linear dot arrays, but it is still large enough for spin manipulation experiments. Our result represents an important step toward the experimental realization of spin-qubit operations in two-dimensional arrays of quantum dots.

DOI： 10.1063/5.0088840

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Micromagnet design for addressable fast spin manipulations in a 2x2 quantum dot array Reviewed International journal

Shungo Nakamura, Haruki Kiyama and Akira Oiwa

Journal of Applied Physics 133 224301 2022.12

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Polarization-independent Light Emission from Air-bridge Bull's-eye cavities Containing a GaAs Quantum Well

Ji S., Tajiri T., Liu X.F., Kiyama H., Oiwa A., Ritzmann J., Ludwig A., Wieck A.D., Iwamoto S.

Optics InfoBase Conference Papers 2022

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Publisher：Optics InfoBase Conference Papers

We demonstrate bull's-eye cavities containing a single quantum well showing almost polarization-independent emission originating from well-degenerated orthogonally polarized cavity modes. The polarization-independent properties will allow the application of the cavity structure to a photon-spin interface.

DOI： 10.1364/CLEOPR.2022.CTuP8A_04

Scopus
Polarization-independent Light Emission from Air-bridge Bull's-eye cavities Containing a GaAs Quantum Well

Ji S., Tajiri T., Liu X.F., Kiyama H., Oiwa A., Ritzmann J., Ludwig A., Wieck A.D., Iwamoto S.

2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022 - Proceedings 2022 （ ISBN:9798350350012 ）

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Publisher：2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022 - Proceedings

We demonstrate bull's-eye cavities containing a single quantum well showing almost polarization-independent emission originating from well-degenerated orthogonally polarized cavity modes. The polarization-independent properties will allow the application of the cavity structure to a photon-spin interface.

DOI： 10.1109/CLEO-PR62338.2022.10432214

Scopus
Detection of photogenerated single electrons in a lateral quantum dot with a surface plasmon antenna Reviewed

Rio Fukai, Yuji Sakai, Takafumi Fujita, Haruki Kiyama, Arne Ludwig, Andreas D. Wieck, Akira Oiwa

Applied Physics Express 14 ( 12 ) 125001 - 125001 2021.12

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Language：Others Publishing type：Research paper (scientific journal)

DOI： 10.35848/1882-0786/ac336d
Design of bull’s-eye optical cavity toward efficient quantum media conversion using gate-defined quantum dot Reviewed

Sangmin Ji, Takeyoshi Tajiri, Haruki Kiyama, Akira Oiwa, Satoshi Iwamoto

Japanese Journal of Applied Physics 60 ( 10 ) 102003 - 102003 2021.10

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Language：Others Publishing type：Research paper (scientific journal)

DOI： 10.35848/1347-4065/ac24da
Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot Reviewed

H. Kiyama, K. Yoshimi, T. Kato, T. Nakajima, A. Oiwa, S. Tarucha

Physical Review Letters 127 ( 8 ) 2021.8

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DOI： 10.1103/physrevlett.127.086802
Characterization of a surface plasmon antenna fabricated on a gate-defined lateral quantum dot Reviewed

Rio Fukai, Yuji Sakai, Tomohiro Nakagawa, Takafumi Fujita, Haruki Kiyama, Arne Ludwig, Andreas D. Wieck, Akira Oiwa

Japanese Journal of Applied Physics 60 ( SB ) SBBI01 - SBBI01 2021.5

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Abstract

Quantum repeater composed of a quantum memory and an interface between photon qubits and memory qubits is indispensable for long-distance quantum communication. Gate-defined lateral quantum dots (QDs) can be a suitable platform for such quantum repeaters because of its aptitude for spin qubit and feasibility of quantum state transfer from photon polarization to electron spin. So far, the reported photoelectron excitation probabilities in such a QD are not high enough to implement practical repeater protocols. To improve the photoexcitation probability, we combine a surface plasmon antenna (SPA) with QDs. We fabricated a SPA designed to enhance the optical transmission to the QDs in a practical illumination setup in a refrigerator and characterized the fabricated antenna by measuring photocurrents at room temperature.

DOI： 10.35848/1347-4065/abd533
Fabrication and optical characterization of photonic crystal nanocavities with electrodes for gate-defined quantum dots Reviewed

T. Tajiri, Y. Sakai, K. Kuruma, S. M. Ji, H. Kiyama, A. Oiwa, J. Ritzmann, A. Ludwig, A. D. Wieck, Y. Ota, Y. Arakawa, S. Iwamoto

Japanese Journal of Applied Physics 59 ( SG ) SGGI05 - SGGI05 2020.4

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Language：Others Publishing type：Research paper (scientific journal)

DOI： 10.7567/1347-4065/ab5b62
Angular momentum transfer from photon polarization to an electron spin in a gate-defined quantum dot Reviewed

Takafumi Fujita, Kazuhiro Morimoto, Haruki Kiyama, Giles Allison, Marcus Larsson, Arne Ludwig, Sascha R. Valentin, Andreas D. Wieck, Akira Oiwa, Seigo Tarucha

Nature Communications 10 ( 1 ) 2019.12

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Language：Others Publishing type：Research paper (scientific journal)

DOI： 10.1038/s41467-019-10939-x
Single-electron charge sensing in self-assembled quantum dots Reviewed

Haruki Kiyama, Alexander Korsch, Naomi Nagai, Yasushi Kanai, Kazuhiko Matsumoto, Kazuhiko Hirakawa, Akira Oiwa

Scientific Reports 8 ( 1 ) 2018.12

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© 2018, The Author(s). Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon–electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.

DOI： 10.1038/s41598-018-31268-x
Design of bull’s eye structures on gate-defined lateral quantum dots Reviewed

Fukai Rio, Nakagawa Tomohiro, Kiyama Haruki, Oiwa Akira

Jpn. J. Appl. Phys. 56 ( 4 ) 04CK04 2017.2

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Language：English

Design of bull’s eye structures on gate-defined lateral quantum dots
Quantum repeaters are required for realizing long-distance quantum communication. The quantum repeater consists of a quantum memory to store quantum information and an interface between photonic flying qubits and the memory qubits. Electron spins in gate-defined quantum dots (QDs), which have a relatively long coherence time and high electrical tunability, are promising candidates for such memory qubits because the fundamental technologies of detecting and manipulating single photoelectron spins have been established. The remaining challenge for the realization of quantum repeaters is an efficient coupling between photons and electron spins in the QDs. In this study, we discuss the enhancement of the transmission and the maintenance of the incident light polarization through bull’s eye structures on gate-defined QDs on the basis of electromagnetic field simulations.

DOI： 10.7567/JJAP.56.04CK04
Conversion from Single Photon to Single Electron Spin Using Electrically Controllable Quantum Dots (Spin Conversion Phenomena in Spintronics)

Oiwa Akira, Fujita Takafumi, Kiyama Haruki, Allison Giles, Ludwig Arne, Wieck Andreas D., Tarucha Seigo

Journal of the Physical Society of Japan 86 ( 1 ) 11008 - 1-10 2017.1

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Conversion from Single Photon to Single Electron Spin Using Electrically Controllable Quantum Dots (Spin Conversion Phenomena in Spintronics)
Single-Shot Ternary Readout of Two-Electron Spin States in a Quantum Dot Using Spin Filtering by Quantum Hall Edge States Reviewed

H. Kiyama, T. Nakajima, S. Teraoka, A. Oiwa, S. Tarucha

Physical Review Letters 117 ( 23 ) 2016.11

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DOI： 10.1103/physrevlett.117.236802
Spin-dependent current through a quantum dot from spin-polarized nonequilibrium quantum Hall edge channels Reviewed

H. Kiyama, T. Nakajima, S. Teraoka, A. Oiwa, S. Tarucha

Physical Review B 91 ( 15 ) 2015.4

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DOI： 10.1103/physrevb.91.155302
Tuning the electrically evaluated electron Landé<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math>factor in GaAs quantum dots and quantum wells of different well widths Reviewed

G. Allison, T. Fujita, K. Morimoto, S. Teraoka, M. Larsson, H. Kiyama, A. Oiwa, S. Haffouz, D. G. Austing, A. Ludwig, A. D. Wieck, S. Tarucha

Physical Review B 90 ( 23 ) 2014.12

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DOI： 10.1103/physrevb.90.235310
Single photoelectron detection after selective excitation of electron heavy-hole and electron light-hole pairs in double quantum dots Reviewed

K. Morimoto, T. Fujita, G. Allison, S. Teraoka, M. Larsson, H. Kiyama, S. Haffouz, D. G. Austing, A. Ludwig, A. D. Wieck, A. Oiwa, S. Tarucha

Physical Review B 90 ( 8 ) 2014.8

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DOI： 10.1103/physrevb.90.085306
Electrically tunable spin filtering for electron tunneling between spin-resolved quantum Hall edge states and a quantum dot Reviewed

H. Kiyama, T. Fujita, S. Teraoka, A. Oiwa, S. Tarucha

Applied Physics Letters 104 ( 26 ) 263101 - 263101 2014.6

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DOI： 10.1063/1.4885040
Nondestructive Real-Time Measurement of Charge and Spin Dynamics of Photoelectrons in a Double Quantum Dot Reviewed

T. Fujita, H. Kiyama, K. Morimoto, S. Teraoka, G. Allison, A. Ludwig, A. D. Wieck, A. Oiwa, S. Tarucha

Physical Review Letters 110 ( 26 ) 2013.6

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DOI： 10.1103/physrevlett.110.266803
Single-Shot Detection of Electrons Generated by Individual Photons in a Tunable Lateral Quantum Dot Reviewed

A. Pioda, E. Totoki, H. Kiyama, T. Fujita, G. Allison, T. Asayama, A. Oiwa, S. Tarucha

Physical Review Letters 106 ( 14 ) 2011.4

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DOI： 10.1103/physrevlett.106.146804
Photorefractive effect in Fe-doped GaN Reviewed

H. Kiyama, R. Fujimura, T. Shimura, K. Kuroda

Optics Communications 282 ( 9 ) 1918 - 1921 2009.5

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DOI： 10.1016/j.optcom.2009.01.059
Nonreciprocal Directional Dichroism in Ferroelectric Nd2Ti2O7 Reviewed

Yoshiaki Shimada, Haruki Kiyama, Yoshinori Tokura

Journal of the Physical Society of Japan 77 ( 3 ) 033706 - 033706 2008.3

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DOI： 10.1143/jpsj.77.033706
Magnetoelectric emission in rare-earth doped ferroelectric crystals La2Ti2O7:R3+(R=Er, Eu, and Nd) Reviewed

Y. Shimada, H. Kiyama, Y. Tokura

Physical Review B 75 ( 24 ) 2007.6

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DOI： 10.1103/physrevb.75.245125

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Presentations

半導体量子コンピュータ集積化に向けたスピン読み出し法の開発 Invited

木山治樹

九州大学量子ネイティブ育成研究シンポジウム 2024.1

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Event date： 2024.1

Language：Japanese Presentation type：Oral presentation (general)

Venue：九州大学伊都キャンパス Country：Japan
Effects of Substrate Bias on Deposition Characteristics of Cumene Plasma Chemical Vapor Deposition Method

M. Eri, S. Ono, S. Ohara, T. Okumura, K. Kamataki, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

ISPlasma2025/IC-PLANTS2025 2025.3

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Event date： 2025.3

Language：English

Venue：中部大学 Country：Japan
Sputter Deposition of Low Resistive 30-nm-thick ZnO:Al films as an Alternative to In2O3:Sn Using ZnO Seed Layers Grown via Solid-Phase Crystallization

和田義晴，謝文叡，沈志遠，薮田久人，山下尚人，奥村賢直，鎌滝晋礼，木山治樹，古閑一憲，白谷正治，板垣奈穂

SPP-42　第42回プラズマプロセシング研究会 2025.1

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Event date： 2025.1

Language：Japanese

Venue：J:COMホルトホール大分 Country：Japan
Towards generation of entangled spin-qubit pairs in semiconductor-superconductor hybrid devices Invited

Haruki Kiyama

CQIP seminar 2025.1

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Event date： 2025.1

Language：Japanese Presentation type：Public lecture, seminar, tutorial, course, or other speech

Venue：New York University Country：United States
Enhancing Photon-Electron Spin Conversion Efficiency in Gate-Defined Quantum Dots with Bull’s Eye Cavity International conference

H. Sato, Y. Konishi, A. Oiwa, R. Fukai, S. Ji, S. Iwamoto, H. Kiyama,

SANKEN International Symposium 2025.1

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Event date： 2025.1

Language：English

Venue：Osaka University Country：Japan
スパッタリング法によるガラス基板上への低抵抗 ZnO:Al 膜の作製: ZnON シード層の結晶化度の影響

謝文叡, 和田義晴, 山下尚人, 奥村賢直, 鎌滝晋礼, 木山治樹, 古閑一憲,白谷正治, 板垣奈穂

第28回プラズマ・核融合学会九州・沖縄・山口支部 2024.12

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Event date： 2024.12

Language：Japanese

Venue：西新プラザ Country：Japan
プラズマCVD法を用いて堆積したa-C:H膜とカーボンナノ粒子の付着の評価

恵利眞人, 小野晋次郎, 小原舜平, 奥村賢直, 鎌滝晋礼, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

第34回日本MRS年次大会 2024.12

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Event date： 2024.12

Language：Japanese

Venue：横浜市開港記念会館他 Country：Japan
Epitaxial growth of InN-rich (ZnO)x(InN)1-x films on sapphire substrate via inverted Stranski Krastanov mode using magnetron sputtering International conference

S.Hata, R.Narishige, N.Yamashita, K.Kamataki, T.Okumura, H.Kiyama, K.Koga, M.Shiratani, N.Itagaki

The 9th Asian Applid Physics Conference (9th Asian-APC) 2024.12

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Event date： 2024.12

Language：English

Venue：琉球大学 Country：Japan
Sputter epitaxy of atomically flat (ZnO)x(InN)1-x films on sapphire using 3D buffer layers: influence of deposition rate of buffer layer International conference

*S.Kumamoto, S.Hata, R.Narishige, N.Yamashita, K.Kamataki, T.Okumura, H.Kiyama, K.Koga, M.Shiratani, N.Itagaki

The 9th Asian Applid Physics Conference (9th Asian-APC) 2024.12

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Event date： 2024.12

Language：English

Venue：琉球大学 Country：Japan
Fabrication and Transport Measurements of Gate-defined Quantum Dot Structures Formed in a Bull’s-eye Optical Cavity International conference

M. Tsuchiya, S. Ji, R. Fukai, H. Kiyama, T. Fujita, X.-F. Liu, A. Ludwig, A. D. Wieck, S. Iwamoto, and A. Oiwa,

2024 Workshop on Nanoscale Innovative Devices and Systems (WINDS) 2024

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Event date： 2024.12

Language：English

Venue：Fairmont Orchid Country：United States
Effects of molecular structure of hydrocarbons on deposition characteristics of a-C:H films using plasma CVD International conference

S.Ono, M.Eri, T.Okumura, N.Yamashita, K.Kunihiro, H.Kiyama, N.Itagaki, K.Koga, M.Shiratani

DPS2024 2024.11

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Event date： 2024.11

Language：English

Venue：千歳市民文化センター Country：Japan
Structural change in a-C:H films deposited using cumene PECVD by ion irradiation International conference

M. Eri, S. Ono, S. Ohara, T. Okumura, N. Yamashita, K. Kamataki, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

AAPPS-DPP2024 2024.11

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Event date： 2024.11

Language：English

Venue：Grand Swiss-Bel Hotel Country：Malaysia
Effects of carbon nanoparticles deposited on film interface on blistering and toughness of a-C:H sandwich film International conference

S. Ono, M. Eri, S. Ohara, T. Okumura, N. Yamashita, K. Kamataki, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

ISSS-10 2024.10

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Event date： 2024.10

Language：English

Venue：北九州国際会議場 Country：Japan
Effect of impinging ions to a-C:H film surface on deposition characteristics using cumene PECVD method International conference

M. Eri1, S. Ono, S. Ohara, T. Okumura, N. Yamashita, K. Kamataki, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

ISSS-10 2024.10

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Event date： 2024.10

Language：English

Venue：北九州国際会議場 Country：Japan
クメンプラズマCVDで堆積したa-C:H製膜特性に対する製膜条件の寄与

小原舜平,小野晋次郎，恵利眞人，奥村賢直，山下尚人，鎌滝晋礼，木山治樹，板垣奈穂，古閑一憲，白谷正治

電気・情報関係学会九州支部連合 2024.9

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Event date： 2024.9

Language：Japanese

Venue：鹿児島大学 Country：Japan
アモルファスカーボン膜へのカーポンナノ粒子挿入による応力低減に対するカーボンナノ粒子堆積特性の寄与

小野晋次郎，恵利眞人，奥村賢直，山下尚人，鎌滝晋礼，木山治樹，板垣奈穂，古閑ー憲，白谷正治

第85回応用物理学会秋季学術講演会 2024.9

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Event date： 2024.9

Language：Japanese

Venue：朱鷺メッセ Country：Japan
芳香環を含む製膜寄与種で堆積したa-C:H膜のsp2/sp3結合構造に対するイオン照射の効果

恵利眞人, 小野晋次郎, 奥村賢直, 山下尚人, 鎌滝晋礼, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

第85回応用物理学会秋季学術講演会 2024.9

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Event date： 2024.9

Language：Japanese

Venue：朱鷺メッセ Country：Japan
CxHy+Ar プラズマ CVD を用いた水素化アモルファスカーボン膜のエッチング耐性に対する材料分子の比較

小野晋次郎, 恵利眞人, 奥村賢直, 山下尚人, 鎌滝晋礼, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

第85回応用物理学会秋季学術講演会 2024.9

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Event date： 2024.9

Language：Japanese

Venue：朱鷺メッセ Country：Japan
Electrically controlled quantum dot and bull's eye optical resonator composite structure for enhanced photon-electron conversion efficiency

H. Sato, Y. Konishi, M. Tsuchiya, A. Oiwa, R. Fukai, M. Mori, T. Fujita, S. Ji, S. Iwamoto, H. Kiyama,

第13回半導体/超伝導体量子効果と量子情報の研修会 2024.9

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Event date： 2024.9

Language：English

Venue：Tochigi Country：Japan
Fabrication and Transport Measurements of Gate-defined Quantum Dot Structures Formed in a Bull’s-eye Optical Cavity International conference

M. Tsuchiya, S. Ji, R. Fukai, H. Kiyama, T. Fujita, X.-F. Liu, A. Ludwig, A. D. Wieck, S. Iwamoto, and A. Oiwa

25th Int. Conf. Physics of Semiconductors (ICPS 2024) 2024

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Event date： 2024.7 - 2024.8

Language：English

Venue：Shaw Centre Country：Canada
クメンプラズマCVD法を用いたa-C:H膜製膜特性に対する基板バイアス電圧の効果

恵利眞人, 小野晋次郎, 奥村賢直, 山下尚人, 鎌滝晋礼, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

放電・プラズマ・パルスパワー研究会 2024.6

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Event date： 2024.6

Language：Japanese

Venue：岩手大学 Country：Japan
クメンプラズマ CVD 法を用いた a-C:H 膜製膜特性に対する膜表面へのイオン照射の効果

恵利眞人，小野晋次郎，奥村賢直，山下尚人，鎌滝晋礼，木山治樹，板垣奈穂，古閑一憲，白谷正治

2024年度日本表面真空学会九州支部学術講演会 2024.6

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Event date： 2024.6

Language：Japanese

Venue：福岡教育大学 Country：Japan
Sputtering deposition of low resistive 30-nm-thick ZnO:Al films on seed layers grown via solid phase crystallization of fractionally crystallized ZnON films International conference

Y. Wada, S. Zhiyuan, H. Yabuta, N. Yamashita, T. Okumura, K. Kamataki, H. Kiyama, K. Koga, M. Shiratani, N. Itagaki

ISPlasma 2024.3

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Event date： 2024.3

Language：English Presentation type：Oral presentation (general)

Venue：名古屋大学 Country：Japan
逆 Stranski-Krastanov モードによるサファイア基板上への(ZnO)x(InN)1-x 膜のエピタキシャル成長:バッファー層のモフォロジーの影響

畑昌太朗，中野祐太郎，成重椋太，山下尚人，鎌滝晋礼，奥村賢直，古閑一憲，白谷正治，木山治樹，板垣奈穂

プラズマ・核融合学会九州・沖縄・山口支部第27回支部大会 2023.12

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Event date： 2023.12

Language：Japanese Presentation type：Oral presentation (general)

Venue：山口KDDI維新ホール Country：Japan
放電電圧変調波形が高周波容量結合プラズマに与える影響：PIC-MCC シミュレーション

長尾伊織，山本祐馬，佐藤優志，鎌滝晋礼，山下尚人, 奥村賢直，木山治樹，板垣奈穂，古閑一憲，白谷正治

プラズマ・核融合学会九州・沖縄・山口支部第27回支部大会 2023.12

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Event date： 2023.12

Language：Japanese Presentation type：Oral presentation (general)

Venue：山口KDDI維新ホール Country：Japan
逆 Stranski-Krastanov モードを利用した異なるオフ角を有するサファイア基板上への(ZnO)x(InN)1-x 膜の成長

中野祐太郎，成重椋太，山下尚人，鎌滝晋礼，奥村賢直，古閑一憲，白谷正治，木山治樹，板垣奈穂

プラズマ・核融合学会九州・沖縄・山口支部第27回支部大会 2023.12

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Event date： 2023.12

Language：Japanese Presentation type：Oral presentation (general)

Venue：山口KDDI維新ホール Country：Japan
Controlling the synthesis, transport, and surface coverage of carbon nanoparticles using plasma CVD International conference

S. Ono, M. Eri, T. Okumura, K. Kamataki, N. Yamashita, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

Global Plasma Forum in Aomori 2023.10

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Event date： 2023.10

Language：English Presentation type：Oral presentation (general)

Venue：ねぶたの家ワ・ラッセ Country：Japan
Scalable high-fidelity spin readout using the double-latching mechanism International conference

T. Morimoto, Y. Yokoyama, Y. Matsumoto, A. Oiwa, H. Kiyama

The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information 2023.9

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Event date： 2023.9

Language：English Presentation type：Oral presentation (general)

Venue：サンバレー那須 Country：Japan
逆Stranski-Krastanovモードを用いたサファイア基板上へのZnO単結晶膜成長：MgOバッファー層の効果

湯上貴文, 矢高功太郎, 山下尚人, 山下大輔,　奥村賢直, 鎌滝晋礼, 木山治樹, 古閑一憲, 白谷正治, 板垣奈穂

第84回応用物理学会秋季学術講演会 2023.9

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Event date： 2023.9

Language：Japanese Presentation type：Oral presentation (general)

Venue：熊本城ホール他 Country：Japan
サンドウィッチ構造 a-C:H 膜の剥離と強度に対する膜界面に堆積したナノ粒子の効果

小野晋次郎, 恵利眞人, 奥村賢直, 鎌滝晋礼, 山下尚人, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

第84回応用物理学会秋季学術講演会 2023.9

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Event date： 2023.9

Language：Japanese Presentation type：Oral presentation (general)

Venue：熊本城ホール他 Country：Japan
逆Stranski-Krastanovモードによる格子不整合基板上への原子平坦 (ZnO)x(InN)1-x 膜の成長

中野祐太郎, 成重椋太, 山下尚人, 鎌滝晋礼, 奥村賢直, 古閑一憲, 白谷正治, 木山治樹, 薮田久人, 板垣奈穂

第84回応用物理学会秋季学術講演会 2023.9

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Event date： 2023.9

Language：Japanese Presentation type：Oral presentation (general)

Venue：熊本城ホール他 Country：Japan
ZnOおよびScAlMgO4ステップ基板上への(ZnO)x(InN)1-x膜の室温エピタキシャル成長

成重椋太, 中野祐太朗, 山下尚人, 鎌滝晋礼, 奥村賢直, 木山治樹, 古閑一憲, 白谷正治, 薮田久人, 板垣奈穂

第84回応用物理学会秋季学術講演会 2023.9

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Event date： 2023.9

Language：Japanese Presentation type：Oral presentation (general)

Venue：熊本城ホール他 Country：Japan
Effects of Ne mixing on plasma enhanced chemical vapor deposition of a-C:H films using CH4/Ar/Ne capacitively coupled discharges International conference

K. Ikeda, M. Otaka, H. Otomo, T. Arima, J. Lai, K. Kamataki, D. Yamashita, T. Okumura, N. Yamashita, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani, T. Shindo, S. Tanaka, T. Matsudo

ICPIG2023 2023.7

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Event date： 2023.7

Language：English Presentation type：Oral presentation (general)

Venue：Hotel Zuiderduin, Egmonf aan Zee Country：Netherlands
Sputter epitaxy of atomically flat (ZnO)x(InN)1-x films on sapphire substrates using ZnO(N) buffer layers fabricated by Ar/N2 discharges International conference

Y. Nakano, R. Narishige, N. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, H. Kiyama, H. Yabuta, N. Itagaki

ICPIG2023 2023.7

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Event date： 2023.7

Language：English Presentation type：Oral presentation (general)

Venue：Hotel Zuiderduin, Egmonf aan Zee Country：Netherlands
Control of ion trajectory in high aspect ratio trenches by using amplitude modulated rf discharges International conference

I. Nagao, Y. Yamamoto, K. Kamataki, T. Okumura, N. Yamashita, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

ICPIG2023 2023.7

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Event date： 2023.7

Language：English Presentation type：Oral presentation (general)

Venue：Hotel Zuiderduin, Egmonf aan Zee Country：Netherlands
Sputter deposition of low resistive 30-nm-thick ZnO:Al films using ZnO seed layers grown via solid-phase crystallization International conference

Y. Wada, Z. Shen, H. Yabuta, N. Yamashita, T. Okumura, K. Kamataki, H. Kiyama, K. Koga, M. Shiratani, N. Itagaki

ICPIG2023 2023.7

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Event date： 2023.7

Language：English Presentation type：Oral presentation (general)

Venue：Hotel Zuiderduin, Egmonf aan Zee Country：Netherlands
Pseudomorphic growth of (ZnO)x(InN)1-x films on ZnO substrates by magnetron sputtering using Ar/N2/O2 discharges International conference

R. Narishige, Y. Nakano, N. Yamashita, K. Kamataki, T. Okumura, H. Kiyama, K. Koga, M. Shiratani, H. Yabuta, N. Itagaki

ICPIG2023 2023.7

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Event date： 2023.7

Language：English Presentation type：Oral presentation (general)

Venue：Hotel Zuiderduin, Egmonf aan Zee Country：Netherlands
Sputter epitaxy of Zn1-xMgxO films on lattice-mismatched sapphire substrates utilizing ZnO(N)/MgO buffer layers fabricated by Ar/N2 and Ar/O2 discharges International conference

T. Yunoue, K. Yataka, N. Yamashita, D. Yamashita, T. Okumura, K. Kamataki, H. Kiyama, K. Koga, M. Shiratani, H. Yabuta, N. Itagaki

ICPIG2023 2023.7

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Event date： 2023.7

Language：English Presentation type：Oral presentation (general)

Venue：Hotel Zuiderduin, Egmonf aan Zee Country：Netherlands
ナノ粒子を用いた膜界面の形状ゆらぎによる膜応力低減

小野晋次郎, 恵利眞人, 奥村賢直, 鎌滝晋礼, 山下尚人, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

2023年度日本表面真空学会　九州支部学術講演会 2023.6

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Event date： 2023.6

Language：Japanese Presentation type：Oral presentation (general)

Venue：アルカス佐世保 Country：Japan
InAs量子井戸構造を用いたゲート制御型量子ドットの作製と伝導特性

林望, 木山治樹, 井手西広樹, Mihir Pendharkar, Chris J. Palmstøm, 大岩顕

日本物理学会2023年春季大会 2023.3

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Event date： 2023.3

Language：Japanese Presentation type：Oral presentation (general)

Venue：オンライン Country：Japan
高周波のパルス変調を用いた電子スピン量子ビットの断熱反転操作高速化

X. F. Liu, 松本雄太, 藤田高史, 木山治樹, J.Ritzmann , A.Ludwig , A.D.Wieck , 大岩顕

日本物理学会2023年春季大会 2023.3

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Event date： 2023.3

Language：Japanese Presentation type：Oral presentation (general)

Venue：オンライン Country：Japan
High-Fidelity Readout of Semiconductor Spin Qubits for Large-Scale Quantum Computers Invited International conference

Haruki Kiyama

ISPlasma2023/IC-PLANTS2023 2023.3

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Event date： 2023.3

Language：English Presentation type：Oral presentation (general)

Venue：岐阜大学 Country：Japan
サファイア基板上への Zn1-xMgxO 膜のスパッタエピタキシー：ZnON/MgO バッファー層の効果

湯上貴文, 矢高功太郎, 三石遼, 山下尚人, 山下大輔, 奥村賢直, 鎌滝晋礼, 木山治樹, 古閑一憲，白谷正治, 薮田久人, 板垣奈穂

プラズマ・核融合学会九州・沖縄・山口支部第26回支部大会 2022.12

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Event date： 2022.12

Language：Japanese Presentation type：Oral presentation (general)

Venue：九州大学筑紫キャンパス Country：Japan
Sputtering deposition of ZnO:Al Transparent Conducting Films on Seed Layers Crystallized via Thermal Annealing of Amorphous ZnON Films

Z. Shen, H. Yabuta, Y. Wada, N. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, H. Kiyama, N. Itagaki

2022年(令和４年度)応用物理学会九州支部学術講演会 2022.11

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Event date： 2022.11

Language：Japanese Presentation type：Oral presentation (general)

Country：Japan
Sputter epitaxy of (ZnO)x(InN)1-x films on sapphire substrates using ZnON buffer layers

Y. Nakano, R. Narishige, N. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, H. Kiyama, H. Yabuta, N. Itagaki

2022年(令和４年度)応用物理学会九州支部学術講演会 2022.11

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Event date： 2022.11

Language：Japanese Presentation type：Oral presentation (general)

Venue：大分大学 Country：Japan
半導体スピン量子ビット集積化に向けたスピン読み出し法の開発 Invited

木山治樹

第38回九州･山口プラズマ研究会 2022.11

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Event date： 2022.11

Language：Japanese Presentation type：Oral presentation (general)

Venue：指宿市白水館 Country：Japan
Polarization-Independent Enhancement of Optical Absorption in a GaAs Quantum Well Embedded in an Air-bridge Bull’s-eye Cavity International conference

S. Ji, T. Tajiri, X-F. Liu, H. Kiyama, A. Oiwa, J. Ritzmann, A. Ludwig, A. D. Wieck, S. Iwamoto

SSDM 2022 2022.9

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Event date： 2022.9

Language：English Presentation type：Oral presentation (general)

Country：Japan
エアブリッジ型ブルズアイ光共振器を用いたGaAs量子井戸の光吸収増強

J. Sangmin, 田尻武義, L. Xiao-Fei, 木山治樹, 大岩顕, R. Julian, L. Arne, W. A. Dirk, 岩本敏

第83回応用物理学会秋季学術講演会 2022.9

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Event date： 2022.9

Language：Japanese Presentation type：Oral presentation (general)

Country：Japan
Electrical Transport in InSb Low Dimensional Systems

Tada Masaki, Akira Oiwa, Haruki Kiyama, Koichi Akahane

Meeting Abstracts of the Physical Society of Japan 2016 The Physical Society of Japan

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Event date： 2016

Language：Japanese

InSbの1次元細線に量子ポイントコンタクト(QPC)を作製し、その電気伝導測定により強いスピン軌道相互作用に特有な電気伝導特性を観測することをを試みた。高移動度実現のため、基板の構造設計を行った。また、高品質な1次元系を実現するため、MBE法によりInSb量子井戸基板を作製し、QPCはサイドゲート型を採用した。QPC作製にあたってはウェットエッチング法を用いた。

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Transport and optical properties of (110) GaAs quantum wells for photon-spin quantum state transfer using heavy hole states

Nakagawa Tomohiro, Fukai Rio, Kiyama Haruki, Ritzmann Julian, Ludwig Arne, Wieck Andreas D., Oiwa Akira

Meeting Abstracts of the Physical Society of Japan 2016 The Physical Society of Japan

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Event date： 2016

Language：Japanese

光ファイバー中において100kmに制限される光子による量子状態の伝送距離を伸ばす方法として量子中継がある。量子中継の実現における基盤技術が光子-電子スピン間の量子状態転写である。実用化に向けた転写効率の向上には、重い正孔励起による手法が期待される。今回、重い正孔励起による転写が可能となる(110)GaAs量子井戸基板の設計と成長を行い、2次元電子ガスの電子輸送特性と光学特性の評価を行った。

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17aAG-2 Transport properties of InAs self-assembled quantum dots with different electrode geometries

Shikishima R., Oiwa A., Kiyama H., Baba S., Hirayama T., Nagai N., Hirakawa K., Tarucha S.

Meeting Abstracts of the Physical Society of Japan 2015 The Physical Society of Japan (JPS)

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Event date： 2015

Language：Japanese

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27aAU-7 横型二重量子ドットにおける単一光子偏光から単一電子スピンへの角運動量転写の実証(27aAU 量子細線・量子井戸・超格子・光応答,領域4(半導体,メゾスコピック系・局在))

藤田高史, 木山治樹, 森本和浩, Allison G., 寺岡総一郎, Ludwig A., Wieck A., 大岩顕, 樽茶清悟

日本物理学会講演概要集 2014.3

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Event date： 2014.3

Language：Japanese

Country：Other

27aAU-7 Angular momentum transfer from a single photon polarization to a single electron spin in a lateral double quantum dot
27aAU-7 Angular momentum transfer from a single photon polarization to a single electron spin in a lateral double quantum dot

Fujita T., Kiyama H., Morimoto K., Allison G., Teraoka S., Ludwig A., Wieck A., Oiwa A., Tarucha S.

Meeting abstracts of the Physical Society of Japan 2014.3 The Physical Society of Japan (JPS)

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Event date： 2014.3

Language：Japanese

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24aBJ-10 g-因子制御GaAs/AlGaAs量子井戸を用いた単一・二重量子ドットの輸送特性(24aBJ 微小接合・量子ドット,領域4(半導体,メゾスコピック系・局在))

森本和浩, 藤田高史, 寺岡総一郎, Allison Giles, 木山治樹, 大岩顕, Haffouz Sofiane, Austing David Guy, 樽茶清悟

日本物理学会講演概要集 2012.3

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Event date： 2012.3

Language：Japanese

Country：Other

24aBJ-10 Transport through single and double quantum dots based on g-factor engineered GaAs/AlGaAs quantum wells
24aBJ-10 Transport through single and double quantum dots based on g-factor engineered GaAs/AlGaAs quantum wells

Morimoto K., Fujita T., Teraoka S., Allison Giles, Kiyama H., Oiwa A., Haffouz Sofiane, Austing David Guy, Tarucha S.

Meeting abstracts of the Physical Society of Japan 2012.3 The Physical Society of Japan (JPS)

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Event date： 2012.3

Language：Japanese

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24aTR-3 2重量子ドットでの単一光励起電子のドット間トンネリング検出(24aTR 量子ドット,領域4(半導体,メゾスコピック系・局在))

藤田高史, 木山治樹, 寺岡総一郎, Allison Giles, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2011.8

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Event date： 2011.8

Language：Japanese

Country：Other

24aTR-3 Detection of Inter-dot Tunneling of a Single Photo-generated Electron in a Double Quantum Dot
23aTL-6 g-因子制御量子井戸の電子スピン共鳴(23aTL 量子ホール効果(整数量子ホール効果),領域4(半導体,メゾスコピック系・局在))

寺岡総一郎, Allison Giles, 森本和浩, 藤田高史, 木山治樹, 大岩顕, Haffouz Sofiane, Austing David Guy, 樽茶清悟

日本物理学会講演概要集 2011.8

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Event date： 2011.8

Language：Japanese

Country：Other

23aTL-6 Electron spin resonance in g-factor engineered GaAs/AlGaAs quantum wells
23pTM-3 光子偏光量子状態転写を用いた単一電子スピン状態トモグラフィ手法の提案(23pTM 量子ドット,領域4(半導体,メゾスコピック系・局在))

木山治樹, 米田淳, 藤田高史, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2011.8

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Event date： 2011.8

Language：Japanese

Country：Other

23pTM-3 Proposal of Single Electron Spin State Tomography Using Quantum State Transfer of Photon Polarization
23aTL-6 Electron spin resonance in g-factor engineered GaAs/AlGaAs quantum wells

Teraoka S., Allison Giles, Morimoto K., Fujita T., Kiyama H., Oiwa A., Haffouz Sofiane, Austing David Guy, Tarucha S.

Meeting abstracts of the Physical Society of Japan 2011.8 The Physical Society of Japan (JPS)

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Event date： 2011.8

Language：Japanese

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24aTR-3 Detection of Inter-dot Tunneling of a Single Photo-generated Electron in a Double Quantum Dot

Fujita T., Kiyama H., Teraoka S., Allison Giles, Oiwa A., Tarucha S.

Meeting abstracts of the Physical Society of Japan 2011.8 The Physical Society of Japan (JPS)

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Event date： 2011.8

Language：Japanese

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23pTM-3 Proposal of Single Electron Spin State Tomography Using Quantum State Transfer of Photon Polarization

Kiyama H., Yoneda J., Fujita T., Oiwa A., Tarucha S.

Meeting abstracts of the Physical Society of Japan 2011.8 The Physical Society of Japan (JPS)

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Event date： 2011.8

Language：Japanese

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24pWQ-12 量子ドットを用いた単一光子検出を同定するための数値的アルゴリズム(24pWQ 量子ドット,領域4(半導体メゾスコピック系・局在))

藤田高史, 浅山徹哉, 木山治樹, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2010.8

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Event date： 2010.8

Language：Japanese

Country：Other

24pWQ-12 Development of a Numerical Algorithm for Identifying single Photon Detection with a Quantum Dot
24pWQ-12 Development of a Numerical Algorithm for Identifying single Photon Detection with a Quantum Dot

Fujita T., Asayama T., Kiyama H., Oiwa A., Tarucha S.

Meeting abstracts of the Physical Society of Japan 2010.8 The Physical Society of Japan (JPS)

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21aHV-5 半導体2重量子ドットにおける単一円偏光の検出実験(21aHV 量子ドット,領域4(半導体,メゾスコピック系・局在))

浅山徹哉, 藤田高史, 木山治樹, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2010.3

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Event date： 2010.3

Language：Japanese

Country：Other

21aHV-5 Detection of single polarized photon in the semiconductor double quantum dot
21aHV-5 Detection of single polarized photon in the semiconductor double quantum dot

Asayama T., Fujita T., Kiyama H., Oiwa A., Tarucha S.

Meeting abstracts of the Physical Society of Japan 2010.3 The Physical Society of Japan (JPS)

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Event date： 2010.3

Language：Japanese

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27pVE-14 GaAs系量子ドットと量子ポイントコンタクトを用いた磁場下での単一光子検出(27pVE 量子井戸・超格子・光応答,領域4(半導体,メゾスコピック系・局在))

大岩顕, Pioda A., 浅山徹哉, 木山治樹, 藤田高史, Allison Giles, 樽茶清悟

日本物理学会講演概要集 2009.3

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Event date： 2009.3

Language：Japanese

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27pVE-14 Single photon detection using a GaAs-based quantum dot with a quantum point contact in the presence of magnetic field
27pVE-14 Single photon detection using a GaAs-based quantum dot with a quantum point contact in the presence of magnetic field

Oiwa A., Pioda A., Asayama T., Kiyama H., Fujita T., Allison Giles, Tarucha S.

Meeting abstracts of the Physical Society of Japan 2009.3 The Physical Society of Japan (JPS)

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Event date： 2009.3

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18aZB-9 強誘電性Nd_2Ti_2O_7の吸収における光学的電気磁気効果(強相関係・低次元物質・誘電体・磁性体,領域5,光物性)

嶋田義皓, 木山治樹, 十倉好紀

日本物理学会講演概要集 2007.2

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Event date： 2007.2

Language：Japanese

Country：Other

18aZB-9 Optical Magnetoelectric Effect in Ferroelectric Nd_2Ti_2O_7
18aZB-9 Optical Magnetoelectric Effect in Ferroelectric Nd_2Ti_2O_7

Shimada Y., Kiyama H., Tokura Y.

Meeting abstracts of the Physical Society of Japan 2007.2 The Physical Society of Japan (JPS)

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Event date： 2007.2

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24aQE-7 La_2Ti_2O_7R^<3+>(R=Nd,Eu,Er)の発光における光学的電気磁気効果(24aQE 領域5,領域10合同誘電体・誘電体の光制御・光誘起相転移・磁性体,領域5(光物性))

嶋田義皓, 木山治樹, 十倉好紀

日本物理学会講演概要集 2006.8

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Event date： 2006.8

Language：Japanese

Country：Other

24aQE-7 Optical Magnetoelectric Effect in La_2Ti_2O_7:R^<3+>(R=Nd,Eu,Er)
24aQE-7 Optical Magnetoelectric Effect in La_2Ti_2O_7:R^<3+>(R=Nd,Eu,Er)

Shimada Y., Kiyama H., Tokura Y.

Meeting abstracts of the Physical Society of Japan 2006.8 The Physical Society of Japan (JPS)

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Event date： 2006.8

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MISC

27aAU-7 横型二重量子ドットにおける単一光子偏光から単一電子スピンへの角運動量転写の実証(27aAU 量子細線・量子井戸・超格子・光応答,領域4(半導体,メゾスコピック系・局在))

藤田高史, 木山治樹, 森本和浩, Allison G., 寺岡総一郎, Ludwig A., Wieck A., 大岩顕, 樽茶清悟

日本物理学会講演概要集 2014.3

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27aAU-7 Angular momentum transfer from a single photon polarization to a single electron spin in a lateral double quantum dot
24aBJ-10 g-因子制御GaAs/AlGaAs量子井戸を用いた単一・二重量子ドットの輸送特性(24aBJ 微小接合・量子ドット,領域4(半導体,メゾスコピック系・局在))

森本和浩, 藤田高史, 寺岡総一郎, Allison Giles, 木山治樹, 大岩顕, Haffouz Sofiane, Austing David Guy, 樽茶清悟

日本物理学会講演概要集 2012.3

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24aBJ-10 Transport through single and double quantum dots based on g-factor engineered GaAs/AlGaAs quantum wells
24aTR-3 2重量子ドットでの単一光励起電子のドット間トンネリング検出(24aTR 量子ドット,領域4(半導体,メゾスコピック系・局在))

藤田高史, 木山治樹, 寺岡総一郎, Allison Giles, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2011.8

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Language：Japanese

24aTR-3 Detection of Inter-dot Tunneling of a Single Photo-generated Electron in a Double Quantum Dot
23aTL-6 g-因子制御量子井戸の電子スピン共鳴(23aTL 量子ホール効果(整数量子ホール効果),領域4(半導体,メゾスコピック系・局在))

寺岡総一郎, Allison Giles, 森本和浩, 藤田高史, 木山治樹, 大岩顕, Haffouz Sofiane, Austing David Guy, 樽茶清悟

日本物理学会講演概要集 2011.8

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Language：Japanese

23aTL-6 Electron spin resonance in g-factor engineered GaAs/AlGaAs quantum wells
23pTM-3 光子偏光量子状態転写を用いた単一電子スピン状態トモグラフィ手法の提案(23pTM 量子ドット,領域4(半導体,メゾスコピック系・局在))

木山治樹, 米田淳, 藤田高史, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2011.8

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Language：Japanese

23pTM-3 Proposal of Single Electron Spin State Tomography Using Quantum State Transfer of Photon Polarization
24pWQ-12 量子ドットを用いた単一光子検出を同定するための数値的アルゴリズム(24pWQ 量子ドット,領域4(半導体メゾスコピック系・局在))

藤田高史, 浅山徹哉, 木山治樹, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2010.8

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Language：Japanese

24pWQ-12 Development of a Numerical Algorithm for Identifying single Photon Detection with a Quantum Dot
21aHV-5 半導体2重量子ドットにおける単一円偏光の検出実験(21aHV 量子ドット,領域4(半導体,メゾスコピック系・局在))

浅山徹哉, 藤田高史, 木山治樹, 大岩顕, 樽茶清悟

日本物理学会講演概要集 2010.3

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Language：Japanese

21aHV-5 Detection of single polarized photon in the semiconductor double quantum dot
27pVE-14 GaAs系量子ドットと量子ポイントコンタクトを用いた磁場下での単一光子検出(27pVE 量子井戸・超格子・光応答,領域4(半導体,メゾスコピック系・局在))

大岩顕, Pioda A., 浅山徹哉, 木山治樹, 藤田高史, Allison Giles, 樽茶清悟

日本物理学会講演概要集 2009.3

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Language：Japanese

27pVE-14 Single photon detection using a GaAs-based quantum dot with a quantum point contact in the presence of magnetic field
18aZB-9 強誘電性Nd_2Ti_2O_7の吸収における光学的電気磁気効果(強相関係・低次元物質・誘電体・磁性体,領域5,光物性)

嶋田義皓, 木山治樹, 十倉好紀

日本物理学会講演概要集 2007.2

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Language：Japanese

18aZB-9 Optical Magnetoelectric Effect in Ferroelectric Nd_2Ti_2O_7
24aQE-7 La_2Ti_2O_7R^<3+>(R=Nd,Eu,Er)の発光における光学的電気磁気効果(24aQE 領域5,領域10合同誘電体・誘電体の光制御・光誘起相転移・磁性体,領域5(光物性))

嶋田義皓, 木山治樹, 十倉好紀

日本物理学会講演概要集 2006.8

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Language：Japanese

24aQE-7 Optical Magnetoelectric Effect in La_2Ti_2O_7:R^<3+>(R=Nd,Eu,Er)

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Professional Memberships

日本物理学会
応用物理学会

Committee Memberships

応用物理学会量子情報工学研究会, 幹事 Organizer Domestic

2024.1 - 2026.3

Research Projects

Semiconductor quantum technology based on industrial-grade Ge quantum materials

2024.10 - 2030.3

Research commissions

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Authorship：Coinvestigator(s) Grant type：Contract research
励起子が情報を記憶する新概念・光メモリの創製

Grant number：24K00929 2024.4 - 2028.3

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

板垣奈穂, 木山治樹

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Grant type：Scientific research funding

励起子は，半導体の光物性と光機能を担う中核として，主にその生成・消滅に着目した物性解明と受発光デバイスへの工学的応用が行われてきた．一方で，「電子とホールが再結合する過程=中間状態」である励起子が，外場中でどのように輸送され，保存されるかの議論は少ない．本研究の目的は，「マクロスケールでは電気的に中性で，かつ中間状態である励起子は，外場中でどのように輸送・保存されるのか？」を明らかにすることで、励起子の輸送と保存を利用した革新デバイスを創製することである．

CiNii Research
Top研究者およびTopチームのためのASPIRE/量子情報と量子生命科学を包括する国際共同研究網の構築/半導体－超伝導体ハイブリッド系を用いた量子もつれ生成基盤技術の開発

2024.2 - 2029.3

Research commissions

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Authorship：Coinvestigator(s) Grant type：Other funds from industry-academia collaboration
スピン軌道相互作用を利用した集積スピン量子ビット基盤の開拓

Grant number：23K26486 2023.4 - 2026.3

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

木山治樹, 板垣奈穂

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Grant type：Scientific research funding

本研究では、集積化に適した量子ビットとして、スピン軌道相互作用を利用した半導体スピン量子ビットに着目し、その基盤技術の開発に取り組む。まず、強いスピン軌道相互作用を示す材料を用いて、集積化に適したゲート制御量子ドットの作製手法を確立する。次に、スピン軌道相互作用を用いたスピン量子ビット高速操作、およびｇ因子のゲート電圧制御による共鳴周波数の精密制御手法の開発に取り組む。これらの技術を組み合わせることで、大規模集積化可能なスピン量子ビットデバイスの実現を目指す。

CiNii Research
Creation of innovative quantum repeater technology for semiconductor spin qubits based on photon-spin quantum state conversion

Grant number：23H05458 2023 - 2027

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)

大岩顕, 都倉康弘, 岩本敏, 木山治樹, 澤野憲太郎

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Authorship：Coinvestigator(s) Grant type：Scientific research funding

将来の量子情報の社会実装に不可欠な量子ネットワークの要素技術である量子中継技術の革新的な発展を目指し、半導体スピン量子ビットとナノフォトニクス技術に基づく光子―スピン量子インターフェースの高度化と新たな量子機能の創製のための学理を研究する。具体的には、通信波長光子の偏光状態からスピン状態へ高効率に変換し、長いメモリ時間を持つ高性能量子インターフェースと、スピン状態からもつれ光子対を生成する新しい量子光源のための基礎学理の研究を遂行する。これにより量子中継開発を大きく進展させる新しい半導体量子スピンフォトニクス分野を開拓する。

CiNii Research
Study on two-dimensional quantum dot arrays towards integration of spin qubits

Grant number：23K17764 2023 - 2025

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Challenging Research(Exploratory)

木山治樹

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Authorship：Principal investigator Grant type：Scientific research funding

本研究は、半導体スピン量子ビットの大規模集積化に向けて、量子ドット２次元アレイの新規制御法の開発を目的とする。不純物や加工誤差による不均一性を考慮した２次元アレイ特有の制御法を確立し、実際の小規模２次元アレイデバイスを用いてその有効性を検証する。制御の複雑さや所要時間の集積度に対するスケーリングを飛躍的に改善し、またデバイスに求められる均一性や再現性を緩和することにより、半導体量子ビット大規模集積化の実現に貢献する。

CiNii Research
スピン軌道相互作用を利用した集積スピン量子ビット基盤の開拓

Grant number：23H01793 2023 - 2025

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

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Authorship：Principal investigator Grant type：Scientific research funding

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Educational Activities

大学院生、学部学生の研究指導

Class subject

電気電子工学研究調査(第1ｸﾞﾙｰﾌﾟ)

2024.10 - 2025.3 Second semester
電気電子工学読解Ⅱ

2024.10 - 2025.3 Second semester
電気電子工学演示Ⅱ

2024.10 - 2025.3 Second semester
Presentations in EEE Studies(Group1)

2024.10 - 2025.3 Second semester
電磁気学I

2024.10 - 2024.12 Fall quarter
半導体量子デバイス工学特論II

2024.6 - 2024.7 Summer quarter
電気電子工学演示Ⅰ

2024.4 - 2024.9 First semester
電気電子工学読解Ⅰ

2024.4 - 2024.9 First semester
電気情報工学入門

2024.4 - 2024.6 Spring quarter
半導体量子デバイス工学特論I

2024.4 - 2024.5 Spring quarter
電気電子工学読解Ⅱ

2023.10 - 2024.3 Second semester
Presentations in EEE Studies(Group1)

2023.10 - 2024.3 Second semester
電気電子工学研究調査(第1ｸﾞﾙｰﾌﾟ)

2023.10 - 2024.3 Second semester
電気電子工学演示Ⅱ

2023.10 - 2024.3 Second semester
電気電子工学読解Ⅰ

2023.4 - 2023.9 First semester
電気電子工学演示Ⅰ

2023.4 - 2023.9 First semester
電気情報工学入門

2023.4 - 2023.6 Spring quarter

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FD Participation

2023.11 Role：Participation Title：【シス情FD】企業等との共同研究の実施増加に向けて

Organizer：[Undergraduate school/graduate school/graduate faculty]
2023.10 Role：Participation Title：【シス情FD】価値創造型半導体人材育成センターについて

Organizer：[Undergraduate school/graduate school/graduate faculty]
2023.9 Role：Participation Title：【シス情FD】Top10%論文／Top10%ジャーナルとは何か: 傾向と対策

Organizer：[Undergraduate school/graduate school/graduate faculty]
2023.7 Role：Participation Title：【シス情FD】若手教員の研究紹介⑨

Organizer：[Undergraduate school/graduate school/graduate faculty]
2023.5 Role：Participation Title：【シス情FD】農学研究院で進めているDX教育について

Organizer：[Undergraduate school/graduate school/graduate faculty]
2023.4 Role：Participation Title：令和５年度第１回全学ＦＤ（新任教員の研修）The 1st All-University FD (training for new faculty members) in FY2023

Organizer：University-wide
2023.4 Role：Participation Title：【シス情FD】若手教員による研究紹介⑧

Organizer：[Undergraduate school/graduate school/graduate faculty]
2023.3 Role：Participation Title：【シス情FD】独・蘭・台湾での産学連携を垣間見る-Industy 4.0・量子コンピューティング・先端半導体-

Organizer：[Undergraduate school/graduate school/graduate faculty]
2022.11 Role：Participation Title：【工学・シス情】教職員向け知的財産セミナー（ＦＤ）

Organizer：[Undergraduate school/graduate school/graduate faculty]
2022.10 Role：Participation Title：【シス情FD】若手教員による研究紹介⑥

Organizer：[Undergraduate school/graduate school/graduate faculty]
2022.9 Role：Participation Title：【シス情FD】研究機器の共用に向けて

Organizer：[Undergraduate school/graduate school/graduate faculty]
2022.7 Role：Participation Title：【シス情FD】若手教員による研究紹介⑤

Organizer：[Undergraduate school/graduate school/graduate faculty]
2022.6 Role：Participation Title：【シス情FD】電子ジャーナル等の今後について

Organizer：[Undergraduate school/graduate school/graduate faculty]

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Other educational activity and Special note

2024 Class Teacher 学部
2023 Class Teacher 学部

Social Activities

出前講義/九州大学工学部の紹介　～量子コンピューティングの研究紹介～

福岡舞鶴高等学校 2023.12

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Audience：Infants,　Schoolchildren,　Junior students,　High school students

Type：Seminar, workshop