Kyushu University Academic Staff Educational and Research Activities Database
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Taizoh SADOH Last modified date:2017.10.16



Graduate School
Undergraduate School


E-Mail
Phone
092-802-3737
Fax
092-802-3724
Academic Degree
D. Eng.
Field of Specialization
Electronics
Research
Research Interests
  • Study on silicon-germanium hetero-semiconductor technology for advanced LSI
    keyword : LSI, semiconductor, Si, Ge, Sn
    1999.04Study on Silicon Hetero-semiconductor. .
  • Study on low-temperature crystal growth processing for advanced flexible electronics
    keyword : flexible electronics, Si, Ge, Sn
    2005.04Study on Semiconductor Processing Technology..
  • Study on silicon hetero-materials under non-equilibrium
    keyword : semiconductor, Si, Ge, non-equilibrium process
    1996.04~2005.03Study on Silicon Hetero-semiconductor. .
Academic Activities
Papers
1. T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao, Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator, Jap.J.Appl.Phys., Vol.47, No.3, pp1876-1879, 2008.03.
2. T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao, High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain, Materials Science Forum, Vol.561-565, pp.1181-1184, 2007.11.
3. T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, and M. Miyao, Low-Temperature Epitaxial Growth of [Fe3Si/SiGe]n (n=1-2) Multi-Layered Structures for Spintronics Application, ECS Transactions, Vol.11, No.6, pp473-480, 2007.10.
4. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Ge-Channel Thin-Film Transistor with Schottky Source / Drain Fabricated by Low-Temperature Processing , Jpn. J. Appl. Phys., Vol.46, No.3B, pp.1250-1253 , 2007.03.
5. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain:, Appl. Phys. Lett., Vol.89, No.19, 192114, pp1-3, 2006.11.
6. T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, and M. Miyao, Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge
, Appl. Phys. Lett. , Vol.89, No.18, 182511, pp1-3 , 2006.10.
7. T. Sadoh, Y. Ohyama, A. Kenjo, K. Ikeda, Y. Yamashita, and M. Miyao , Suppression of Floating-Body Effects in Poly-Si TFT by Schottky S/D Structure , Jpn. J. Appl. Phys. , Vol.45, No.5B, pp.4370-4373 , 2006.05.
Membership in Academic Society
  • The Electrochemical Society
  • The Japan Society of Applied Physics
  • The Institute of Electrical Engineers of Japan
  • The Institute of Electrical and Electronics Engineers
  • The Institute of Electronics, Information and Communication Engineers of Japan