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Taizoh SADOH Last modified date：2024.04.03

Associate Professor / Electronic Devices
Department of Electronics
Faculty of Information Science and Electrical Engineering


Graduate School
Department of Electrical and Electronic Engineering
Graduate School of Information Science and Electrical Engineering
Undergraduate School
Department of Electrical Engineering and Computer Science
School of Engineering


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Homepage
https://kyushu-u.elsevierpure.com/en/persons/taizoh-sadoh
　Reseacher Profiling Tool　Kyushu University Pure
Academic Degree
D. Eng.
Field of Specialization
Electronics
ORCID(Open Researcher and Contributor ID)
0000-0001-6988-5597
Research
Research Interests
  • Study on silicon-germanium hetero-semiconductor technology for advanced LSI
    keyword : LSI, semiconductor, Si, Ge, Sn
    1999.04Study on Silicon Hetero-semiconductor. .
  • Study on low-temperature crystal growth processing for advanced flexible electronics
    keyword : flexible electronics, Si, Ge, Sn
    2005.04Study on Semiconductor Processing Technology..
  • Study on silicon hetero-materials under non-equilibrium
    keyword : semiconductor, Si, Ge, non-equilibrium process
    1996.04～2005.03Study on Silicon Hetero-semiconductor. .
Academic Activities
Papers
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1. Takaya Nagano, Ryutaro Hara, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh, Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation, Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2023.107692, 165, 107692-1-107692-8, 2023.10, 極薄Ge薄膜の新しい成膜プロセスを創出するとともに、トランジスタを作製し、高い移動度を実現。高移動度チャネルを用いた次世代集積回路の実現を加速する重要な成果である。.
2. Keita Katayama, Hiroshi Ikenoue, Taizoh Sadoh, Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing, Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2023.107433, 160, 107433-1-107433-7, 2023.06, リン酸塗布とエキシマレーザ照射法を用いた新しいドーピング技術を創出し、Ge表面に極浅・高濃度ドープ層を形成することで金属/Ge界面のフェルミレベルピニングを制御し、ショットキー障壁の変調を実現。高移動度チャネルを用いた次世代集積回路の実現を加速する重要な成果である。.
3. Takashi Kajiwara, Otokichi Shimoda, Tatsuya Okada, Charith Jayanada Koswaththage, Takashi Noguchi, and Taizoh Sadoh, High mobility of (111)-oriented large-domain (>100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films, Journal of Applied Physics, https://doi.org/10.1063/5.0105045, 132, 14, 145302-1-145302-6, 2022.10, スパッタ法による堆積と急速熱処理法を用いたInSb薄膜の新しい結晶成長技術を創出し、絶縁膜上に極めて高いキャリア移動度を有するInSb薄膜を実現。高感度かつ低コストな薄膜磁気センサの実現を加速する重要な成果である。.
4. Hongmiao Gao, Taizoh Sadoh, Layer-exchange crystallization for low-temperature (∼450 °C) formation of n-type tensile-strained Ge on insulator, Applied Physics Letters, 10.1063/5.0020489, 117, 17, 172102-1-172102-6, 2020.10, V族元素を触媒として用いた新しい結晶成長技術を創出し、絶縁膜上におけるn型Ge結晶薄膜の低温形成を実現。次世代集積回路や高性能フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
5. C. Xu, X. Gong, M. Miyao, T. Sadoh, Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization, Applied Physics Letters, 10.1063/1.5096798, 115, 4, 042101-1-042101-5, 2019.07, 低温固相成長法に界面変調法を重畳した新しい結晶成長技術を創出し、絶縁膜上における極薄GeSn結晶薄膜の高移動度化を実現。次世代集積回路や高性能フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
6. T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao, Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator, Jap.J.Appl.Phys., Vol.47, No.3, pp1876-1879, 2008.03.
7. T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao, High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain, Materials Science Forum, Vol.561-565, pp.1181-1184, 2007.11.
8. T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, and M. Miyao, Low-Temperature Epitaxial Growth of [Fe3Si/SiGe]n (n=1-2) Multi-Layered Structures for Spintronics Application, ECS Transactions, Vol.11, No.6, pp473-480, 2007.10.
9. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Ge-Channel Thin-Film Transistor with Schottky Source / Drain Fabricated by Low-Temperature Processing , Jpn. J. Appl. Phys., Vol.46, No.3B, pp.1250-1253 , 2007.03.
10. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Low-temperature formation (Appl. Phys. Lett., Vol.89, No.19, 192114, pp1-3, 2006.11.
11. T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, and M. Miyao, Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge
, Appl. Phys. Lett. , Vol.89, No.18, 182511, pp1-3 , 2006.10.
12. T. Sadoh, Y. Ohyama, A. Kenjo, K. Ikeda, Y. Yamashita, and M. Miyao , Suppression of Floating-Body Effects in Poly-Si TFT by Schottky S/D Structure , Jpn. J. Appl. Phys. , Vol.45, No.5B, pp.4370-4373 , 2006.05.
Presentations
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Membership in Academic Society
  • The Electrochemical Society
  • The Japan Society of Applied Physics
  • The Institute of Electrical Engineers of Japan
  • The Institute of Electrical and Electronics Engineers
  • The Institute of Electronics, Information and Communication Engineers of Japan


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