九州大学-研究者情報 [王冬 (教授) 総合理工学研究院 IFC部門]

IV族混晶の欠陥物性解明と制御、IV族混晶デバイス用低温プロセスの構築

キーワード：GeSn、欠陥、低温プロセス、近赤外線受光素子
2021.10.

Ge-CMOSと混載可能な高性能Ge-光素子実現のための基盤技術開発
キーワード：Ge-光素子、CMOS、電子・電気材料、金属/半導体コンタクト、局所歪み
2013.06.

薄膜半導体結晶の評価技術
キーワード：SOI、SGOI、GOI、フォトルミネッセンス、DLTS
2001.12.

ひずみGe技術
キーワード：ひずみGe、ひずみSiGe、MOSFET、バックゲートMOSFET、移動度向上、界面準位、酸化濃縮、局所酸化濃縮
2009.10.

ひずみSi技術
キーワード：ひずみSi、SiGe、SOI、MOS、小数キャリア生成寿命、DLTS、界面準位、フォトルミネッセンス
2002.10.

Ge-MISFETプロセスに関する基礎研究
キーワード：Geチャネル、Ge On Insulator、 high-k On Ge、メタルゲート、S-D形成
2007.04.

Siウェーハ中の重金属挙動と制御
キーワード：太陽電池、Siウェーハ、重金属不純物、ゲッタリング、DLTS
2001.12～2006.03.

高誘電率ゲートスタック構造の形成
キーワード：high-k、ECRプラズマ、SiO2、SiON、SiN、HfO2,積層構造、メタルゲート
2001.12～2008.03.

狭ギャップIV族混晶による赤外多帯域受発光集積デバイス
2021.10～2027.03, 代表者：中塚理, 名古屋大学, 国立研究開発法人科学技術振興機構（JST）
本研究においては、超視覚センシングを達成しうる数μmの中・長波赤外帯域までをカバーし、既存のSi集積プラットフォーム上への融合を見据えた赤外フォトニクスのための優れた結晶品位を持つ準安定な狭ギャップIV族混晶半導体・ヘテロ構造の総合的な集積工学を構築する。具体的には、優れた環境耐候性を実現する多帯域LiDARシステム等への応用を志した「中・長波赤外多帯域撮像集積デバイス・システムの試作・検証」を最終目標とし、実用的な準安定IV族混晶ヘテロ構造の物質科学深耕と集積プロセス・デバイス工学の開拓を目指す。.

主要原著論文

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1.	N. Shimizu, D. Wang, H. Nakashima, K. Yamamoto, Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback method, ECS Journal of Solid State Science and Technology, 10.1149/2162-8777/ad384b, 13, 044001-044001, 2024.04, [URL].
2.	K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, V. Depauw, Ge-on-insulator fabrication based on Ge-on-nothing technology, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.35848/1347-4065/ad2d07, 63, 2, 04SP32-1-04SP32-8, 2024.04, [URL].
3.	R. Loo, A. Hikavyy, D. Wang, K. Yamamoto, T. Sipőcz, Á. Kerekes, A. Akula, and Y. Shimura, Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices, Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023), 10.7567/ssdm.2023.m-3-05, 525-526, 2023.09, [URL].
4.	K. Yamamoto, D. Wang, H. Nakashima, Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optelectronics Applications, ECS transactions, 10.1149/10404.0157ecst, 104, 4, 157-166, 2021.10.
5.	H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy, ECS transactions, 10.1149/09805.0395ecst, 98, 5, 395-404, 2020.10.
6.	Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET, AIP Advances, 10.1063/5.0002100, 10, 065119-1-065119-7, 2020.06.
7.	T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, and D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/1347-4065/aafb5e, 58, B, SBBE05-1-SBBE05-6, 2019.04.
8.	W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima, Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy, Journal of Applied Physics, 10.1063/1.5055291, 124, 20, 205303-1-205303-11, 2018.11.
9.	T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate , Extended Abstracts of the 2018 International Conference on Solid State Devices and　Materials (SSDM2018), 543-544, 2018.09.
10.	T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, K. Yamamoto, H. Nakashima, and DONG WANG, Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes, Semiconductor Science and Technology, 10.1088/1361-6641/aa827f, 32, 10, 104001-1-104001-6, 2017.10.
11.	Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.55.04EH08, 55, 4S, 04EH08-1-04EH08-6, 2016.04.
12.	DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure, THIN SOLID FILMS, 10.1016/j.tsf.2015.09.074, 602, 43-47, 2016.03.
13.	DONG WANG, Takayuki Maekura, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure, APPLIED PHYSICS LETTERS, 10.1063/1.4913261, 106, 7, 071102-1-071102-4, 2015.02.
14.	DONG WANG, Yuta Nagatomi, Shuta Kojima, Yamamoto Keisuke, Hiroshi Nakashima, Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method, Thin Solid Films, 10.1016/j.tsf.2013.10.065, 557, 288-291, 2014.04.
15.	DONG WANG, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation, Journal of Applied Physics, 10.1063/1.4759139, 112, 8, 083707-1-083707-5, 2012.10.
16.	DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, Journal of The Electrochemical Society, 10.1149/2.037112jes, 158, 12, H1221-H1224, 2011.12.
17.	DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, The Electrochemical Society Transactions, 10.1149/1.3567723, 34, 1, 1117-1122, 2011.01.
18.	DONG WANG, Haigui Yang, Hiroshi Nakashima, Defect characterization and control for SiGe-on-insulator (Invited), Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2010）, 10.1109/ICSICT.2010.5667501, 1525-1528, 2010.11.
19.	DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima, 325 nm-laser-excited micro-photoluminescence for strained Si films, THIN SOLID FILMS, 10.1016/j.tsf.2009.09.124, 518, 9, 2470-2473, 2010.02.
20.	DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima, Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain, Journal of Applied Physics, 10.1063/1.3305463, 107, 3, 033511-1-033511-5, 2010.02.
21.	DONG WANG, Hiroshi Nakashima, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation, Solid-State Electronics, 10.1016/j.sse.2009.04.021, 53, 8, 841-849, 2009.08.
22.	DONG WANG, Hiroshi Nakashima, Masanori Tanaka, Taizoh SADOH, Ｍasanobu Miyao, Jun Morioka, Tokuhide Kitamura, Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence, THIN SOLID FILMS, 10.1016/j.tsf.2008.08.021, 517, 1, 31-33, 2008.11.
23.	DONG WANG, Haigui Yang, Jun Morioka, Tokuhide Kitamura, Hiroshi Nakashima, Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation, Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2008）, 10.1109/ICSICT.2008.4734646, 684-687, 2008.10.
24.	DONG WANG, Hiroshi Nakashima, Jun Morioka, Tokuhide Kitamura, Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition, APPLIED PHYSICS LETTERS, 10.1063/1.2825271, 91, 24, 241918-1-241918-3, 2007.12.
25.	DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima, Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 10.1016/j.nimb.2006.10.009, 253, 1-2, 31-36, 2006.12.
26.	DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Hiroshi Nakashima, Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Inslator Virtual Substrate Fabrication, Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2006）, 10.1109/ICSICT.2006.306678, 2193-2195, 2006.10.
27.	DONG WANG, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, APPLIED PHYSICS LETTERS, 10.1063/1.2240111, 89, 4, 041916-1-041916-3, 2006.07.
28.	DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Structural and electrical evaluation for strained Si/SiGe on insulator, THIN SOLID FILMS, 10.1016/j.tsf.2005.07.338, 508, 1-2, 107-111, 2006.06.
29.	DONG WANG, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima, Photoluminescence characterization of strained Si-SiGe-on-insulator wafers, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.45.3012, 45, 4B, 3012-3016, 2006.04.
30.	DONG WANG, Asami Ueda, Hideki Takada, Hiroshi Nakashima, Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements, PHYSICA B-CONDENSED MATTER, 10.1016/j.physb.2005.12.106, 376-377, 411-415, 2006.04.
31.	DONG WANG, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae, Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions, APPLIED PHYSICS LETTERS, 10.1063/1.2152109, 87, 25, 251928-1-251928-3, 2005.12.
32.	DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.44.2390, 44, 4B, 2390-2394, 2005.04.
33.	DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements, APPLIED PHYSICS LETTERS, 10.1063/1.1891303, 86, 12, 122111-1-122111-3, 2005.03.
34.	DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method, Proceeding of 7th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2004）, 10.1109/ICSICT.2004.1435268, 2148-2150, 2004.10.
35.	DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Control of two-photon absorption by using electromagnetic field in sodium and rubidium vapors, Proceedings of the Society of Photographic Instrumentation Engineers, 10.1117/12.448258, 4458, 278-283, 2001.11.
36.	DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Electromagnetically induced two-photon transparency in rubidium atoms, EUROPHYSICS LETTERS, 10.1209/epl/i2001-00267-5, 54, 4, 456-460, 2001.05.
37.	DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Electromagnetically induced two-photon transparency in a four level system of rubidium atom, Proceedings of the Society of Photographic Instrumentation Engineers, 10.1117/12.425120, 4397, 140-145, 2001.04.

主要総説, 論評, 解説, 書評, 報告書等

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1.

中前正彦、王冬、浅野種正、宮尾正信, 高速LSI用ひすみSiウエハ一技術, 応用物理, 2005.09, [URL], Si LSI技術は，素子微細化により情報通信機器の高速・低消費電力化の要求に応えてきたが，微細化だけではLSIの高性能化は限界に近づきつつあり，新たな指導原理が求められている.LSIの構成素子となるMOSFETのチャネル部にひずみを加えて，Siのバンド構造を変調し，キャリアの走行速度を向上させる「ひずみSi技術」がLSIの高機能化に有効との認識が高まりつつある.筆者らは，結晶性に優れた200mm径のひずみSiウエハーの製造技術を確立した.本稿では，その形成手法，ひすみSiウエハ一の電気的評価および回路試作結果について紹介する.さらに，ひずみSiのSOI化として注目されているSiGe/SOIの酸化濃縮法を高度化し，SiGe層が薄い場合でも高いひずみ緩和率を得るための手法についても紹介する..

主要学会発表等

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1.	A. Honda, N. Shimizu, Y. J. Feng, K. Yamamoto, S. Shibayama, O. Nakatsuka, and D. Wang, Observation of acceptor-type defect levels using low-temperature Hall effect measurement for GeSn layers fabricated by molecular beam epitaxy, 14th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.12.
2.	Y. J. Feng, K. Yamamoto, A. Honda, N. Shimizu, D. Wang, Measurement of Fowler-Nordheim tunneling barrier height in Ge-MIS structures, The 8th Asia Applied Physics Conference (2023年(令和5年度)応用物理学会九州支部学術講演会), 2023.11.
3.	Akira Honda, Shimizu Noboru, Keisuke Yamamoto, Shigehisa Shibayama, Osamu Nakatsuka, Dong Wang, Investigation of low temperature Hall effect characteristics of low Sn concentration GeSn on high resistivity Ge substrates, 25th Cross Straits Symposium on Energy and Environmental Science and Technology, 2023.11.
4.	K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw, Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer, International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.05.
5.	N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang, N-type characteristics of undoped Ge0.967Sn0.033 fabricated on bulk n-Ge, International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023), 2023.05.
6.	N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang, N-type characteristics of undoped GeSn in the low Sn concentration region, 13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.01.
7.	王一、本田彬、清水昇、山本圭介、柴山茂久、中塚理、王冬, 光・電子デバイス応用に向けたノンドープ GeSnのMOS特性調査, 2022年(令和4年度)応用物理学会九州支部学術講演会, 2022.11.
8.	本田彬、王一、清水昇、山本圭介、柴山茂久、中塚理、王冬, ノンドープGeSnエピタキシャル膜のホール効果測定による電気伝導特性評価, 2022年(令和4年度)応用物理学会九州支部学術講演会, 2022.11.
9.	清水昇、王一、山本圭介、張師宇、柴山茂久、中塚理、王冬, 電子・光デバイス応用に向けたPt/GeSn接合のショットキー特性調査, 2022年第83回応用物理学会秋季学術講演会, 2022.09.
10.	N. Shimizu, Y. Wang, K. Yamamoto,S. Zhang, S. Shibayama, O. Nakatsuka, D. Wang, Electrical characteristics of metal/GeSn contacts in lateral Schottky diodes, The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022), 2022.08.
11.	清水昇、王一、山本圭介、張師宇、中塚理、王冬, 電子・光デバイス応用に向けた金属/GeSn接合の低温形成, 2022年第69回応用物理学会春季学術講演会, 2022.03.
12.	Wang Dong, Credit Transfer and Degree Cooperation in Transnational Talent Training at Asian Universities -- EEST Program, Future-oriented Transnational Higher Education in Asia, 2021.12.
13.	永松寛大、山本圭介、王冬, Ge-on-Insulator 基板のフォトルミネッセンス強度に及ぼす膜厚の影響, 第12回半導体材料・デバイスフォーラム, 2021.12.
14.	Kanta Nagamatsu, Keisuke Yamamoto and Dong Wang, IMPACT OF FILM THICKNESS ON PHOTOLUMINESCENCE INTENSITY OF SMART-CUT GERMANIUM-ON-INSULATOR SUBSTRATES, 23nd Cross Straits Symposium on Energy and Environmental Science and Technology, 2021.12.
15.	永松寛大、山本圭介、王冬, Ge-on-Insulator基板のPL発光強度の膜厚依存性の調査, 2021年度応用物理学会九州支部学術講演会, 2021.12.
16.	Dong WANG, Ge-based semiconductor devices for future ULSI --- Development of fundamental fabrication technologies, Westlake Engineering Colloquium, 2021.05.
17.	中島寛、Wei-Chen Wen、山本圭介、王冬, DLTS法によるGeゲートスタック中のトラップ解析, 第26回電子デバイス界面テクノロジー研究会, 2021.01.
18.	Keisuke Sugata,, Kanta Nagamatsu, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima, INVESTIGATION OF DIRECT BAND GAP LIGHT EMISSION IN MESA ETCHED Pt/Ge/TiN STRUCTURE, 22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST), 2020.12.
19.	H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy, PRiME2020, 2020.10.
20.	D. Wang, T. Maekura, K. Yamamoto, H. Nakashima, Enhancement of direct band gap electroluminescence in asymmetric metal/Ge/metal diodes, TACT 2019 International Thin Film Conference, 2019.11.
21.	H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy, 236th ECS meeting, 2019.10.
22.	後藤太希、前蔵貴行、仲江航平、山本圭介、中島寛、王冬、Miao Zhang、Zhongying Xue、Zenfeng Di, GOI基板を用いた非対称ー金属／Ge／金属構造光素子の作製・特性評価, 2018年第79回応用物理学会秋季学術講演会, 2018.09.
23.	T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, 2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.09.
24.	D. Wang, T. Maekura, K. Yamamoto, H. Nakashima, Direct band gap electroluminescence and photo detection in asymmetric metal/Ge/metal diodes, Collaborative Conference on Materials Research (CCMR) 2018, 2018.06.
25.	W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.05.
26.	T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.05.
27.	前蔵貴行, 本山千里, 田中健太郎, 山本圭介, 王冬, 中島寛, Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価, 2017年第64回応用物理学会春季学術講演会, 2017.03.
28.	DONG WANG, Towards an energy-saving society – the shrinking transistors, CAMPUS Asia EEST 2nd stage Kick-off Symposium, 2017.02.
29.	T. Maekura, C. Motoyama, K. Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, 2017.02.
30.	DONG WANG, Direct band gap light emission and detection at room temperature in bulk Ge diodes, The 2nd Joint Symposium of Kyushu University and Yonsei University, 2016.02.
31.	DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes, American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.
32.	DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05.
33.	DONG WANG, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
34.	DONG WANG, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06.
35.	DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-on-insulator, China Semiconductor Technology International Conference 2011 (CSTIC2011), 2010.03.

所属学会名

応用物理学会

学協会役員等への就任

2021.12～2025.04, 応用物理学会九州支部, 理事.

学会大会・会議・シンポジウム等における役割

2023.11.25～2023.11.26, The 8th Asia Applied Physics Conference, 座長（Chairmanship）.

2023.11.25～2023.11.26, 2023 年(令和5年度) 応用物理学会九州支部学術講演会, 座長（Chairmanship）.

2023.11.20～2023.11.22, The 24th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会副委員長.

2022.12.01～2022.12.02, The 24th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会副委員長.

2021.12.02～2021.12.03, The 23th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会副委員長.

2020.12.02～2020.12.03, The 22th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会副委員長.

2019.11.24～2019.11.27, The 21th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会副委員長.

2018.11.26～2018.11.28, The 20th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会委員長.

2017.11.29～2017.12.01, The 19th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会副委員長.

2017.02.22～2017.02.22, CAMPUS Asia EEST 2nd stage Kick-off Symposium, 司会（Moderator）.

2015.12.02～2015.12.03, 17th Cross Straits Symposium on Energy and Environmental Science and Technology, 座長（Chairmanship）.

2015.10.24～2015.10.25, American Vacuum Society (AVS) Shanghai Thin Film Conference, 座長（Chairmanship）.

2015.02.05～2015.02.06, Joint Symposium of Kyushu University and Yonsei University, 座長（Chairmanship）.

2014.11.13～2014.11.15, 16th Cross Straits Symposium on Energy and Environmental Science and Technology, 座長（Chairmanship）.

2010.11.01～2010.11.04, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 座長（Chairmanship）.

2016.12.04～2016.12.06, The 18th Cross Straits Symposium on Energy and Environmental Science & Technology, 組織委員会委員.

2013.06.02～2013.06.06, 8th International Conference on Si Epitaxy and Heterostructures (ICSI-8) & 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 国際学会現地委員会委員.

学術論文等の審査

年度	外国語雑誌査読論文数	合計
2023年度	1	1
2022年度	2	2
2021年度	1	1
2020年度	1	1
2019年度	2	2
2018年度	2	2
2017年度	3	3
2016年度	1	1
2015年度	2	2

科学研究費補助金の採択状況(文部科学省、日本学術振興会)

2024年度～2026年度, 基盤研究(C), 分担, 中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発.

2023年度～2025年度, 基盤研究(C), 代表, Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発.

2017年度～2019年度, 基盤研究(B), 代表, Ge-On-Insulator基板上への局所歪み導入によるGe-光素子の高性能化.

2014年度～2016年度, 基盤研究(B), 代表, Ge-CMOSと混載可能な高性能Ge-光素子実現のための基盤技術開発.

2011年度～2012年度, 若手研究(B), 代表, Ge結晶への局所歪み技術の開発とトランジスタ応用.

2009年度～2010年度, 若手研究(B), 代表, 高性能バイポーラトランジスタのための高精度・局所歪み評価.

日本学術振興会への採択状況(科学研究費補助金以外)

2006年度～2007年度, 外国人特別研究員, 代表, 精密欠陥制御による高品質SiGe仮想基板の形成.

競争的資金(受託研究を含む)の採択状況

2021年度～2026年度, 戦略的創造研究推進事業 (文部科学省), 分担, 狭ギャップIV族混晶による赤外多帯域受発光集積デバイス.

寄附金の受入状況

2009年度, 丸文研究交流財団, 丸文研究交流財団交流賛助費
課題：高性能バイポーラトランジスタのための高精度・局所歪み評価.


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