Kyushu University Academic Staff Educational and Research Activities Database
List of Presentations
Koichi Kakimoto Last modified date:2020.09.11

Professor / Crystal Growth Dynamics / Division of Renewable Energy Dynamics / Research Institute for Applied Mechanics


Presentations
1. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura,and Koichi Kakimoto, Numerical Analysis on Asymmetric Phenomenon in the 200 mm (8 inch) Floating Zone Silicon, The 29th International Photovoltaic Science and Engineering Conference (PVSEC29) and the 18th China Photovoltaic Conference (CPVC18), 2019.11.
2. Xin Liu, Xue-Feng Han, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Transient global modeling of oxygen and carbon segregations during the pulling process of Czochralski silicon crystal growth, The 29th International Photovoltaic Science and Engineering Conference (PVSEC29) and the 18th China Photovoltaic Conference (CPVC18), 2019.11.
3. Satoshi Nakano, Xin Liu, Xuefeng Han, Koichi Kakimoto, Numerical analysis of the effect of seed crystal on dislocation density in Si crystal for solar cells, The 29th International Photovoltaic Science and Engineering Conference (PVSEC29) and the 18th China Photovoltaic Conference (CPVC18), 2019.11.
4. Koichi Kakimoto, Crystal Growth of CZ-Si for High Efficiency Cells : Learn Lessons from the Past, The 29th International Photovoltaic Science and Engineering Conference (PVSEC29) and the 18th China Photovoltaic Conference (CPVC18), 2019.11.
5. 韓 学峰 中野 智 , 劉 鑫 原田 博文 , 宮村 佳児 , 柿本 浩一, 200 mm(8インチ)FZシリコン結晶成長の三相線に関する3次元数値解析, 第48回結晶成長国内会議(JCCG-48), 2019.10.
6. K. Kakimoto, Recent Development of Silicon Crystals for Solar Cells in Japan, GADEST 2019, Gettering and Defect Engineering in Semiconductor Technology 2019, 2019.09.
7. 劉 鑫,原田 博文,宮村 佳児,韓学峰,中野 智,西澤 伸一,柿本 浩一, CZシリコン結晶引き上げ過程における酸素偏析のモデル化, 第48回結晶成長国内会議(JCCG-48), 2019.10.
8. Xin Liu, Xue-Feng Han, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Transient global modeling of oxygen and carbon segregations during the pulling process of Czochralski silicon crystal growth, 2019年第80回応用物理学会秋季学術講演会, 2019.09.
9. Xuefeng Han, Satoshi Nakano, Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, 3D Numerical investigation on 200 mm (8-inch) floating zone (FZ) silicon process, 2019年第80回応用物理学会秋季学術講演会, 2019.09.
10. Koichi Kakimoto, Xin Liu, Satoshi Nakano, Xue-Feng Han, Daisuke Murakami, Yoshiji Miyamura, Hirofumi Harada, Shin-ichi Nishizawa, NUMERICAL STUDIES ON OXYGEN TRANSFER IN SI MELT UNDER INHOMOGENEOUS MAGNETIC FIELDS OF TMCZ CONDITION USING A GLOBAL MODEL, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.08.
11. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto, Transient Global Modeling of CZ-Si crystal growth: Segregation of O & C during Pulling, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.08.
12. Daisuke Murakami, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical simulation on oxygen transfer in Si melt under a cusp-shaped magnetic field using a 3D global model, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.07.
13. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto, Transient Global Modeling for the Pulling Process of CZ-Si Crystal Growth: Principles, Formulation and Implementation, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.07.
14. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura,and Koichi Kakimoto, Numerical studies on asymmetric three-phase line in the floating zone silicon, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.08.
15. Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto, CO concentration in Cz furnace, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.07.
16. Satoshi Nakano, Xin Liu, Xuefeng Han, Koichi Kakimoto, Effect of seed crystal on dislocation density in Si single crystal, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.07.
17. XueXin Liu、Xue-Feng Han、Satoshi Nakano、Hirofumi Harada、Yoshiji Miyamura、Koichi Kakimoto, Dynamic global modeling of the oxygen segregation during the pulling process of Czochralski silicon crystal growth, 第66回応用物理学会 春季学術講演会, 2019.03.
18. Koichi Kakimoto, Collaboration of Numerical and Experimental studies on Crystal Growth Processes, International Symposium on Modeling of Crystal Growth Processes and Devices(MCGPD-2019), 2019.02.
19. Koichi Kakimoto, Crystal growth for power devices and PVs, ISCGSCT2017, 2018.12.
20. 韓 学峰, 劉 シン, 中野 智, 原田 博文, 宮村 佳児, 柿本 浩一, Numerical simulation on asymmetric interface of floating zone (FZ) for silicon crystal growth, 第47回結晶成長国内会議(JCCG-47), 2018.11.
21. 劉 しん,原田 博文,宮村 佳児,韓 学峰,中野 智,西澤 伸一,柿本 浩一, Numerical analyses and experimental validations on transport and control of carbon in in Czochralski silicon crystal growth, 第47回結晶成長国内会議(JCCG-47), 2018.11.
22. Koich Kakimoto, Numerical investigation and experimental validation of crystal growth of semiconductors, International Symposium & School on Crystal Growth Fundamentals, 2018.11.
23. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Koichi Kakimoto, Numerical simulation of effect of interstitial oxygen on dislocation density in Si single crystal, The 8th Forum on the Science and Technology of Silicon Materials 2018, 2018.11.
24. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura,and Koichi Kakimoto, 3D Numerical Analysis on Asymmetric Interface of Floating Zone (FZ) for Silicon Crystal Growth, The 8th Forum on the Science and Technology of Silicon Materials 2018, 2018.11.
25. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto, Numerical analyses and experimental validations on transport and control of carbon in CZ-Si crystal growth, The 8th Forum on the Science and Technology of Silicon Materials 2018, 2018.11.
26. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto, Numerical Analyses and Experimental Validations on Transport and Control of Carbon in Czochralski Silicon Crystal Growth, IWMCG-9, 2018.10.
27. Ryusuke Yokoyama, Tsuyoshi Nakamura, Toshiyuki Fujiwara, Koichi Kakimoto, Melt Flow Behavior of Industrial Scale Silicon Czochralski Growth with a Transverse Magnetic Field, IWMCG-9, 2018.10.
28. T. Ide, S. Nakano, H. Harada, Y. Miyamura, M. Imai, K. Kakimoto, Effect of Oxygen on Dislocation Generation in Si Single Crystal, IWMCG-9, 2018.10.
29. Komura Subaru, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Flow Influence on Gan MOVPE Growthorientation, IWMCG-9, 2018.10.
30. Komura Subaru, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, First Principles and Thermodynamic Studies on Gan MOVPE Processes, IWMCG-9, 2018.10.
31. K. Kawakami, S. Komura, Y. Yamamoto, A. Kusaba, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, Methodology for Multiphysics Flow Simulation in GaN MOVPE Using Thermodynamic Analysis and First Principles Calculations for GaN Deposition, IWMCG-9, 2018.10.
32. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical Analysis on 3D Behavior of Floating Zone (FZ) for Silicon Crystal Growth, IWMCG-9, 2018.10.
33. Xuefeng Han, Satoshi Nakano, Xin Liu, Hirofumi Harada, Yoshiji Miyamura andKoichi Kakimoto, Numerical investigation on asymmetrical interface of floating zone (FZ) for silicon crystal growth, Sixth European Conference on Crystal Growth (ECCG6), 2018.09.
34. Xin Liu, Xue-Feng Han, S. Nakano, H. Harada,Y. Miyamura, and K. Kakimoto, Numerical analyses and experimental validations on transport and control of carbon in in Czochralski silicon crystal growth, Sixth European Conference on Crystal Growth (ECCG6), 2018.09.
35. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Koichi Kakimoto, Numerical analysis of dependence of oxygen on dislocation generation in Si single crystal, Sixth European Conference on Crystal Growth (ECCG6), 2018.09.
36. Koichi Kakimoto, Satosi Nakano, Yoshiji Miyamura, Hirofumi Harada, Xin Liu, Xuefeng Han, and Shin-ichi Nishizawa, Silicon crystal growth of solar cells: Lessons learned from the pasts, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
37. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, and Koichi Kakimoto, Numerical simulation on asymmetrical interface of floating zone (FZ) for silicon crystal growth, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
38. Xin Liu, Xue-Feng Han, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, and Koichi Kakimoto, Numerical analyses on carbon transport and control during the melting process of Czochralski silicon crystal growth, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
39. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, and Koichi Kakimoto, Effect of oxygen on dislocation density in si single crystal for solar cells during solidification and cooling process, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
40. Xuefeng Han, Satoshi Nakano, Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical simulation of crystal rotation effect on the solid-liquid interface in the floating-zone (FZ) silicon, 第65回応用物理学会 春季学術講演会, 2018.03.
41. Xin Liu, Xue-Feng Han, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical analyses on carbon transport and control during the melting process of Czochralski silicon crystal growth, 第65回応用物理学会 春季学術講演会, 2018.03.
42. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical simulation on 3D melt-crystal interface of floating zone (FZ) for silicon crystal growth, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
43. Y. Morimoto, T. Kawamura, Y. Suzuki, Y. Kangawa, K. Kakimoto, Molecular Dynamics Simulation of Strain relaxation of AlN buffer layer, IWUMD-2017, 2017.11.
44. Y. Inatomi, Y. Kangawa, S. F. Chichibu, K. Kakimoto, Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE, IWUMD-2017, 2017.11.
45. Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto, Control of crucible movement on melting process and C in CZ-Si growth, The 27th Photovoltaic Science and Engineering Conference , 2017.11.
46. K. Kakimoto, Crystal Growth of Power Devices, CGCT-7, 2017.10.
47. Kento Kawakami, Yoshihiro Yamamoto, Katsunori Yoshimatu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, A Methodology for Multiphysics Simulation of Gallium Nitride MOVPE Method using Thermodynamic Analysis of Driving Force of Gallium Nitride Crystal Growth, ICMaSS2017, 2017.10.
48. Powel Kempisty, Yoshihiro Kangawa, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano, Stability of the carbon and oxygen impurities in the subsurface layer near the polar GaN surfaces, ICMaSS2017, 2017.10.
49. Koichi Kakimoto, The effect of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AIN crystals, ICMaSS2017, 2017.09.
50. Yoshihiro Yamamoto, Kento Kawakami, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Multiphysics Flow Simulation with Appropriate Conditions Predicted by Thermodynamic Analysis of Driving Force of GaN Crystal Growth, ICMaSS2017, 2017.09.
51. A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu, Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State, ICMaSS2017, 2017.09.
52. K. Kakimoto, Y. Miyamura, H. Harada, L. Xin, S. Nakano, Crystal Growth of CZ-Si and Relationship between Carrier Lifetime and Defects, SSDM2017, 2017.09.
53. K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi, Thermodynamic Analysis of the Surface Reactions in GaN MOVPE, SSDM2017, 2017.09.
54. Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto, Steepest-entropy-ascent quantum thermodynamic behavior of ammonia chemical adsorption on GaN(0001) surfaces under MOVPE, The 2017 E-MRS Fall Meeting, 2017.09.
55. HAN XUEFENG, Satoshi Nakano, Xin Liu, Koichi Kakimoto, 3D global heat transfer model on floating zone (FZ) for silicon crystal growth, 第78回応用物理学会秋季学術講演会, 2017.09.
56. Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto, Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 第78回応用物理学会秋季学術講演会, 2017.09.
57. Xue-Feng Han, Satoshi Nakano, Xin Liu, Kakimoto Koichi, 3D global modeling of induction heating of silicon in the floating zone process, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
58. Xin Liu, Xue-Feng Han, Satoshi Nakano, Kakimoto Koichi, Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
59. Wataru Fukushima, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Kakimoto Koichi, Influence of oxygen diffusion on dislocation density in Si single crystal , 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
60. Kakimoto Koichi, INFLUENCE OF CARRIER CONCENTRATION ON BULK LIFETIME IN CZ-SI CRYSTAL, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
61. Kakimoto Koichi, ANALYSIS OF RE-MELTING PROCESS OF SILICON GROWN BY TRANSVERSE MAGNETIC FIELD APPLIED CZ METHOD, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
62. Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Kakimoto Koichi, Influence of Carrier Concentration on Bulk Lifetime in CZ-Si Crystal, ICDS-29 (The 29th International Conference on Defects in Semiconductors), 2017.08.
63. Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Koichi Kakimoto, Akinori Koukitu, Thermodynamic analysis of InGaN MOVPE: influence of lattice constraint, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
64. K. Kawakami, Y. Yamamoto, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, A Methodology for Multiphysics Simulation of GaN MOVPE Using Thermodynamic Analysis of Driving Force of GaN Crystal Growth, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
65. Y. Yamamoto, K. Kawakami, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, Multiphysics Flow Simulation with Suitable Conditions Predicted by Thermodynamic Analysis of Driving Force of GaN Crystal Growth, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
66. Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Kakimoto Koichi, First-Principles Study of Non-Polar GaN Surfaces under the OVPE Growth Conditions, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
67. K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi, Thermodynamic Analysis of the TMG Decomposition Process Considering the Activation Energy, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
68. Pawel Kempisty, Yoshihiro Kangawa, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano, Density Functional Theory study on stability of carbon and oxygen at GaN(0001) and GaN(000-1) surfaces, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
69. Kakimoto Koichi, Multi-scale Modelling of Crystal Growth: from Silicon to Wide bandgap materials, THE 9th INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS, ROCAM 2017 & THE 2nd INTERNATIONAL SYMPOSIUM ON DIELECTRIC MATERIALS AND APPLICATIONS, ISyDMA 2017, 2017.07.
70. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Kakimoto Koichi, Effect of Oxygen on Dislocation Multiplication during Growth of Crystalline Silicon for Solar Cell, 7th International Workshop on Crystal Growth Technology, 2017.07.
71. Yudai Maji, Satoshi Nakano, Kakimoto Koichi, Mass-flux Analysis of AlN Crystal Growth at a Seed Face in PVT Method, 7th International Workshop on Crystal Growth Technology, 2017.07.
72. Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Kakimoto Koichi, Numerical analysis of dislocation density in Si single crystal with oxygen diffusion, 7th International Workshop on Crystal Growth Technology, 2017.07.
73. Xin Liu, Xue-Feng Han, Satoshi Nakano, Kakimoto Koichi, Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 7th International Workshop on Crystal Growth Technology, 2017.07.
74. Xue-Feng Han, Satoshi Nakano, Xin Liu, Kakimoto Koichi, 3D Numerical analysis on the shape of free surface in floating zone (FZ) method for silicon single crystal growth, 7th International Workshop on Crystal Growth Technology, 2017.07.
75. Liu Xin, HAN XUEFENG, Nakano Satoshi, Kakimoto Koichi, Effect of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 第64回応用物理学会春季学術講演会, 2017.03.
76. HAN XUEFENG, Nakano Satoshi, Liu Xin, Kakimoto Koichi, Numerical analysis on the free surface of floating zone (FZ) for silicon crystal growth by Volume of Fluid (VOF) model, 第64回応用物理学会春季学術講演会, 2017.03.
77. Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto, First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, 2017.01, We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3)3 (X = Ga, Al, In) at finite temperatures and whether the (CH3)3 AlNH2 adduct can be formed or not. Our calculated results show that (CH3)2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3)2AINH2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3)2GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3)2lnNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas..
78. K. Kakimoto, Y. Miyamura, H. Harada, X. Liu, S. Nakano, Crystal Growth and Defect Analysis of Silicon for Photovoltaics, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, 2016.11.
79. S. Nakano, B. Gao, K. Kakimoto, Relationship between the Dislocation Density and Residual Stress in a GaN Crystal during the Cooling Process
, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, 2016.11.
80. W. Fukushima, B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto, Three-dimensional Analysis of Dislocation Density in Oxygen Dissolved Silicon Crystals
, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, 2016.11.
81. S. Nakano, B. Gao, H. Harada, Y. Miyamura, K. Kakimoto, Effect of growth orientation on dislocation density and residual strain in mono-like silicon crystal, The 9th International Workshop on Crystalline Silicon for Solar Cells and the 3rd Silicon Materials Workshop (CSSC-9), 2016.10.
82. X. Liu, S. Nakano, B. Gao, K. Kakimoto, Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth, The 9th International Workshop on Crystalline Silicon for Solar Cells and the 3rd Silicon Materials Workshop (CSSC-9), 2016.10.
83. A. Kusaba, Y. Kangawa, M. R. von Spakovsky, K. Shiraishi, K. Kakimoto, A. Koukitu, Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE, International Workshop on Ntride Semiconductors 2016, 2016.10.
84. Koichi Kakimoto, Satoshi Nakano, Yoshihiro Kangawa, Crystal growth of AlN: from atomic scale to macro scale

, E-MRS 2016 Fall Meeting, 2016.09.
85. Xin Liu, Satoshi Nakano, Koichi Kakimoto, Dynamic modeling of melting process and carbon contamination in packed Si chunks of Czochralski silicon crystal growth, 第77回応用物理学会秋季学術講演会, 2016.09.
86. X Liu, S. Nakano, B. Gao, K. Kakimoto, Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
87. Y. Miyamura, H. Harada, S. Nakano, B. Gao, K. Kakimoto, Influence of Light Elements on Bulk Lifetime in CZ Si crystals, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
88. A. Kusaba, Y. Kangawa, K. Kakimoto, K. Shiraishi, H. Amano, A. Koukitu, Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction, The 18th International Conference on Crystal Growth and Epitaxy, 2016.08.
89. T. Tamura, A. Kusaba, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu, Contribution of lattice constraint to indium incorporation into coherently grown InGaN, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
90. H. VALENCIA, Y. Kangawa, K. Kakimoto, MOCDV and CBE of GaAs1-xNx modeled by ab initio stabilities of (100) surfaces under As2, H2, and N2, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
91. K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, First principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
92. W. Fukushima, B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto, Effect of oxygen atoms on dislocation multiplication in a silicon crystal, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
93. K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, Computational fluid dynamic approach coupled with thermodynamic analysis of driving force for deposition in GaN MOVPE, The 18th International Conference on Crystal Growth and Epitaxy, 2016.08.
94. T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, K. Kakimoto, Stable Structure of GaN(0001) under the OVPE Growth Conditions, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
95. S. Nakano, B. Gao, K. Kakimoto, Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
96. Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi, Orientation dependency of dislocation generation in Si growth process, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, 2016.01, In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper..
97. Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto, 50 cm size seed cast Si ingot growth and its characterization, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, 2016.01, We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers..
98. K. Kakimoto, B. GAO, Sh. Nishizawa, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, Y. KANGAWA, Modelling of Crystal Growth: Macro and Atomic Scale Analysis, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
99. B. GAO, S. Nakano, K. Kakimoto, Three-Dimensional Analysis of Dislocation Multiplication in Single-Crystal Silicon under Accurate Control of Cooling History of Temperature, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
100. S. Nakano, B. GAO, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto, Numerical Analysis of Relationship between Dislocation Density and Residual Strain in Silicon Ingots Used for Solar Cells, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
101. S. Nakano, B. GAO, K. Kakimoto, Numerical Analysis of the Effect of Substrate and Cooling Rate on Grown-in Dislocation Multiplication for GaN Single Crystal, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
102. X. Liu, S. Nakano, B. GAO, K. Kakimoto, Reduction of Carbon Contamination during the Melting Process of Cz-Si Crystal Growth, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
103. S. Nakano, B. GAO, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, One-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
104. A. Kusaba, Y. KANGAWA, Y. Honda, H. Amano, K. Kakimoto, Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE, 6th International Symposium on Growth of III-Nitrides, 2015.11.
105. 刘 鑫, GAO BING, 中野 智, 柿本 浩一, Reduction of Carbon Contamination during the Melting Process of Czochralski Silicon Crystal Growth, 第45回結晶成長国内会議, 2015.10.
106. Xin Liu, BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical analysis of SiC and SiO2 deposition processes by gas-solid interaction in Czochralski silicon crystal growth, 第76回応用物理学会秋季学術講演会, 2015.09.
107. Xin Liu, BING GAO, Satoshi Nakano, Koichi Kakimoto, Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth, 5th European Conferece on Crystal Growth, 2015.09.
108. Koichi Kakimoto, BING GAO, Shin-ichi Nishizawa, Satoshi Nakano, Yoshihiro KANGAWA, Collaboration of atomic and macro scale calculations:polytype and defect control of wide bandgap material, 5th European Conferece on Crystal Growth, 2015.09.
109. Satoshi Nakano, BING GAO, Karolin Jiptner, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Masayuki Fukuzawa, Koichi Kakimoto, Numerical analysis of dislocation density in multicrystalline silicon for solar cells using experimental verification, 5th European Conferece on Crystal Growth, 2015.09.
110. B. Gallien, M. Albaric, J.P. Garandet, Thierry Duffar, Koichi Kakimoto, M. M’ Hamdi, Study on the usage of a commercial software (Comsol multiphysics) for dislocation multiplication model
, 5th European Conferece on Crystal Growth, 2015.09.
111. Akira Kusaba, Yoshihiro KANGAWA, S.Krukowski, Koichi Kakimoto, Hirofumi Harada, Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach, 5th European Conferece on Crystal Growth, 2015.09.
112. Kazuma Miyazaki, BING GAO, Satoshi Nakano, Koichi Kakimoto, The reduction of basal plane dislocations by modifying thermal conductivity of the crucible during PVT growth of 4H-SIC single crystals., 5th European Conferece on Crystal Growth, 2015.09.
113. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto, ONE-SEED CASTING LARGE-SIZE MONOCRYSTALLINE SILICON FOR HIGH-EFFICIENCY AND LOW-COST SOLAR CELLS, ACCGE-20/OMVPE-17, 2015.08.
114. BING GAO, Satoshi Nakano, Koichi Kakimoto, THREE-DIMENSIONAL ANALYSIS OF DISLOCATION MULTIPLICATION IN SINGLE-CRYSTAL SILICON UNDER ACCURATE CONTROL OF COOLING HISTORY OF TEMPERATURE, ACCGE-20/OMVPE-17, 2015.08.
115. Koichi Kakimoto, Shin-ichi NIshizawa, BING GAO, Satoshi Nakano, 原田 博文, Yoshiji Miyamura, Takafumi Sekiguchi, ATOMIC AND MACRO SCALE CALCULATIONS ON CRYSTAL GROWTH OF WIDE BANDGAP SEMICONDUCTORS, ACCGE-20/OMVPE-17, 2015.08.
116. Satoshi Nakano, BING GAO, Koichi Kakimoto, EFFECT OF COOLING RATE ON GROWN-IN DISLOCATION MULTIPLICATION ON PRISMATIC SLIP PLANES FOR GAN SINGLE CRYSTAL, ACCGE-20/OMVPE-17, 2015.08.
117. Koichi Kakimoto, Time dependent and 3D structure of melt flow of silicon under transverse magnetic fields, BIFD 2015, 2015.07.
118. A. Kusaba, Yoshihiro KANGAWA, S. Krukowski, T. Kimura, T. Tanikawa, R. Katayama, T. Matsuoka, Koichi Kakimoto, Surface Energy and Facet Formation in InN films grown by Pressurized-Reactor MOVPE, 34th Electronic Materials Symposium, 2015.07.
119. S. Nakano, BING GAO, H. Harada, Y. Miyamura, K. Jiptner, Takashi Sekiguchi, Koichi Kakimoto, Numerical investigation of the relationship between the crystal growth method and dislocation density in multicrystalline silicon for solar cells
, 8th International Workshop on Crystalline Silicon for Solar Cells, 2015.05.
120. BING GAO, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, Takashi Sekiguchi, Koichi Kakimoto, One-seed casting large-size monocrystalline silicon for high-efficiency and low-cost solar cells
, 8th International Workshop on Crystalline Silicon for Solar Cells, 2015.05.
121. Xin Liu, GAO BING, Satoshi Nakano, 柿本 浩一, Correlation study on heating profile and carbon contamination during the melting process of Czochralski silicon crystal growth, 第62回応用物理学会春季学術講演会, 2015.03.
122. GAO BING, Karolin Jiptner, Hirofumi Harada, Satoshi Nakano, Yoshiji Miyamura, Takashi Sekiguchi, 柿本 浩一, Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature, 第62回応用物理学会春季学術講演会, 2015.03.
123. Koichi Kakimoto, Crystal growth of atomic scale and macro scale calculations, DKT-2015, 2015.03.
124. Koichi Kakimoto, SiC crystal growth of electrical and optical devices, 39th International Conference and Exposition on Advanced Ceramics and Composites, 2015.01.
125. Bing Gao, Koichi Kakimoto, Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells, 7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014, 2015.01, Impurities and dislocations in silicon crystals can cause significant deterioration in the conversion efficiency of solar cells. For increasing solar cell efficiency, reduction of impurities and dislocations is necessary. Numerical simulation is a powerful tool for improving the quality of silicon crystal for solar cells. A set of numerical analysis system that includes all processes involved in crystal growth has been developed for studying the carbon and oxygen transport in global furnace, and a three-dimensional Alexander-Haasen model was developed for studying the dislocation multiplication. The simulation helped to reduce carbon and oxygen impurities by designing a simple crucible cover and to decrease the dislocation multiplication and residual stress by using a slow cooling process. Further quality improvements can be achieved using these solvers to optimize furnace structure and operating conditions at a low cost..
126. BING GAO, J. Karolin, S. Nakano, H. Harada, Y.Miyamura, T. Sekiguchi, Koichi Kakimoto, Application of Three-dimensional Alexanderhaasen Model to Analyzing Experimental Dislocation-density Distribution in Single-crystal Silicon, WCPEC-6, 2014.11.
127. BING GAO, Koichi Kakimoto, Role of Numerical simulation in high-quality crystal growth, CPVC14, 2014.11.
128. Yoshihiro KANGAWA, Koichi Kakimoto, Theoretical approach to growth mechanisms of InN by vapor phase epitaxy, 2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2), 2014.10.
129. Koichi Kakimoto, Computer simulation for multicrystal silicon growth, The 7th forum on the Science and Technologyof Silicon Materials 2014, 2014.10.
130. S. Nakano, BING GAO, Koichi Kakimoto, Numerical analysis of the relationship between the crystal growth method and dislocation density in multicrystalline silicon for solar cells

, The 7th forum on the Science and Technologyof Silicon Materials 2014, 2014.10.
131. X. Liu, BING GAO, S. Nakano, Koichi Kakimoto, Numerical investigation of carbon and silicon carbide contamination during the melting process of Czochralski silicon crystal growth
, The 7th forum on the Science and Technologyof Silicon Materials 2014, 2014.10.
132. Xin Liu, BING GAO, Satoshi Nakano, Koichi Kakimoto, Effects of Argon Flow on Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
133. BING GAO, Karolin Jiptner, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto, Potential and limitation of 3D Alexander-Haasen model in analyzing experimental dislocation-density distribution in single-crystal silicon
, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
134. Koichi Kakimoto, Crystal Growth of Energy Production and Energy Savin, IUMRS-ICA 2014, 2014.08.
135. H. Sumiyoshi, Yoshihiro KANGAWA, S. F. Chichibu, M. Knetzger, E. Meissner, Koichi Kakimoto, Cathodoluminescence studies of AlN/AlN(0001) grown by solid source solution growth method
, IWN2014, 2014.08.
136. Yoshihiro KANGAWA, T. Hamada, T. Kimura, R. Katayama, T. Matsuoka, Koichi Kakimoto, Theoretical study on structural stability of InN grown by pressurized-reactor MOVPE, 33rd Electronic Materials Symposium, 2014.07.
137. Koichi Kakimoto, Understanding and Control of Silicon Crystal Growth for LSIs and PVs, 6th International Workshop on Crystal Growth Technology, 2014.06.
138. Koichi Kakimoto, Crystal growth of SiC for power devices, CGCT-6, 2014.06.
139. Xin Liu, BING GAO, Satoshi Nakano, Koichi Kakimoto, Numerical Investigation of Carbon and Silicon Carbide Contamination in the Melting Process of a CZ-Si Crystal Growth, E-MRS 2014 SPRING MEETING, 2014.05.
140. BING GAO, Satoshi Nakano, Koichi Kakimoto, Three-dimensional modeling of basal plane dislocations in 4H-SiC, E-MRS 2014 SPRING MEETING, 2014.05.
141. Koichi Kakimoto, Cz silicon, Norwegian Solar Cell Conference 2014, 2014.05.
142. Karolin Jiptner, GAO BING, 宮村佳児, 原田博文, 柿本 浩一, 関口隆史, Thermal-stress induced dislocation distribution in seed-cast and CZ Si
ingots
, 第61 回応用物理学会春季学術講演会, 2014.03.
143. 李 建永, Karolin Jiptner, 木村 隆, 関口隆史, 原田博文, 宮村佳児, 柿本 浩一, 小椋厚志, 炉内ガス雰囲気に依存した離型剤と溶融シリコンの界面特性, 第61 回応用物理学会春季学術講演会, 2014.03.
144. 刘 鑫, GAO BING, 中野 智, 柿本 浩一, CZ法における炭素混入を考慮したシリコン原料融解過程の数値解析, 第61 回応用物理学会春季学術講演会, 2014.03.
145. GAO BING, 中野 智, 柿本 浩一, PVT 成長法を用いた4H-SiC 単結晶における基底面転位の低減に対するヒーター電力制御の最適, 第61 回応用物理学会春季学術講演会, 2014.03.
146. GAO BING, 中野 智, 柿本 浩一, 物理的気相輸送法を用いた4H-SiC 単結晶成長における基底面転位の3 次元, 第61 回応用物理学会春季学術講演会, 2014.03.
147. Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, Koichi Kakimoto, 10 cm diameter mono cast Si growth and its characterization, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 2014.01, To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency..
148. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi, Characterization of residual strain in Si ingots grown by the seed-cast method, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 2014.01, The residual strain distribution in cast-grown mono-like Si ingots is analyzed. The effect of the crucible during solidification and the influence of different cooling rates is described. To clarify in which process steps residual strain accumulates, several Si ingots were grown in a laboratory scale furnace (Ø100 mm) using different cooling conditions after completion of the solidification. For the cooling, two different cooling rates were distinguished: fast cooling (12°C/min) and slow cooling (5°C/min). It was found that changes in cooling gradients greatly influence the amount of residual strain. The results show that slow cooling in any temperature range leads to strain reduction. The greatest reduction could be found when the temperature gradient was changed to slow cooling in the high temperature region..
149. Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Role of the surface N-H molecular layer in high quality In-RICH InGaN growth by MOVPE, International Symposium on Innovative Materials for Processes in Energy Systems, IMPRES 2013, 2014.01, This study theoretically investigates the influence of the growth orientation on In incorporation during metal-organic vapor phase epitaxy (MOVPE) growth. We propose a new theoretical model based on first-principles calculations that show the role of the N-H molecular layer on In incorporation. Under MOVPE growth conditions, III-nitride surfaces terminated by N-H molecular layers are stable. The N-H layer that covers the In atomic layer prevents In atom desorption and is replaced by Ga atoms. In incorporation is, therefore, more efficient for higher N-H layer coverage and stability. To investigate this relationship, calculation of the enthalpy change for the decomposition of an N-H molecular layer was performed. To take into account the experimental conditions, temperature dependence of surface reconstruction is considered. The trend of this enthalpy change depends on the growth orientation, which agrees well with the experimental In composition..
150. GAO BING, 中野 智, 原田 博文, 宮村 佳児, 関口 隆史, 柿本 浩一, 数値計算を用いた円筒状単結晶における転位発生に対する冷却フラックスの影響, 第43回結晶成長国内会議, 2013.11.
151. VALENCIA HUBERT, Yoshihiro KANGAWA, Koichi Kakimoto, Stabilities of GaAs(100) Surfaces under As2, H2, and N2 Conditions as a Model for Vapor-Phase Epitaxy
of GaAs1-xNx: a First-Principles Study
, 第43回結晶成長国内会議, 2013.11.
152. GAO BING, 西澤 伸一, 柿本 浩一, PVT成長法におけるAlexander-Haasenモデルを用いた4H-SiC単結晶の転位密度塑性挙動モデル, 第43回結晶成長国内会議, 2013.11.
153. Koichi Kakimoto, Crystal Growth of Single Crystals by Using a Seed-Cast Method, PVSEC-23, 2013.10.
154. Satoshi Nakano, BING GAO, Hirofumi Harada, Yoshiji Miyamura, Takafumi Sekiguchi, Koichi Kakimoto, Effect of outgoing total heat flows from the crystal on dislocation density and residual stress in multicrystalline silicon for solar cells, 7th International Workshop on Crystalline Silicon Solar Cells (CSSC7), 2013.10.
155. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Dislocation analysis of silicon for photovoltaic, 7th International Workshop on Crystalline Silicon Solar Cells (CSSC7), 2013.10.
156. Satoshi Nakano, BING GAO, Hirofumi Harada, Yoshiji Miyamura, Takafumi Sekiguchi, Koichi Kakimoto, Analysis of the dislocation density in crystalline silicon for solar cells by the casting process, Si Materials Workshop, 2013.10.
157. Masato Inoue, Yoshihiro KANGAWA, Hiroyuki Kageshima, Tanaka Satoru, Koichi Kakimoto, Designing vicinal direction of SiC(0001) for epitaxial graphene growth, The International Conference on Silicon Carbide and Related Materials (ICSCRM2013) , 2013.10.
158. Yoshihiro KANGAWA, Shunro Nagata, Koichi Kakimoto, Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method, 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), 2013.10.
159. BING GAO, S. Nishizawa, Koichi Kakimoto, Dislocation density-based modeling of plastic behavior of 4H-SiC single crystal by the Alexander-Haasen model during PVT growth, The International Conference on Silicon Carbide and Related Materials (ICSCRM2013) , 2013.10.
160. Yoshihiro KANGAWA, Shunro Nagata, Boris M Epelbaum, Koichi Kakimoto, Dislocation propagation behavior in AlN grown by solid-source solution growth (3SG) method, 2013 JSAP-MRSジョイントシンポジウム, 2013.09.
161. BING GAO, Takafumi Sekiguchi, Koichi Kakimoto, Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth, 第74回応用物理学会学術講演会, 2013.09.
162. Masato Inoue, Yoshihiro KANGAWA, Hiroyuki Kageshima, Koichi Kakimoto, Structural control of C clustering at SiC(0001) steps, 2013 JSAP-MRSジョイントシンポジウム, 2013.09.
163. Tomoe Yayama, Yoshihiro KANGAWA, Koichi Kakimoto, The orientation dependence of In incorporation of InGaN: The role of N-H layer, 2013 JSAP-MRSジョイントシンポジウム, 2013.09.
164. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takafumi Sekiguchi, Koichi Kakimoto, Influence of cooling flux on the generation of dislocations for cylindrical single crystal silicon by numerical modeling, 第74回応用物理学会学術講演会, 2013.09.
165. Xin Liu, BING GAO, Koichi Kakimoto, Analysis of Argon Gas Flow and Impurity Transport in a CZ-Si Crystal Growth by Global Simulation, 第74回応用物理学会学術講演会, 2013.09.
166. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Dislocation Reduction in Muticrystalline or Seed Cast-Grown Silicon for Photovoltaic by Numerical Modeling, 2013Photovoltaic Materials and Manufacturing Issues III• Photovoltaic Materials and Manufacturing Issues III Workshop, 2013.09.
167. Tomoe Yayama, Yoshihiro KANGAWA, Koichi Kakimoto, The role of N-H molecular layer on the surface for high quality In-rich InGaN growth by MOVPE, International Symposium on Innovative Materials for Processes in Energy Systems 2013 (IMPRES2013), 2013.09.
168. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
169. Xin Liu, BING GAO, Koichi Kakimoto, Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
170. Koichi Kakimoto, Takuya Shiramomo, BING GAO, Frederic Mercier, Shin-ichi Nishizawa, Satoshi Nakano, Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
171. Masato Inoue, Yoshihiro KANGAWA, H. Kageshima, Koichi Kakimoto, Structural controllability of C clusters by template effect of SiC step , 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
172. Yoshihiro KANGAWA, Shunro Nagata, Boris Epelbaum, Koichi Kakimoto, Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
173. BING GAO, Koichi Kakimoto, Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
174. VALENCIA HUBERT, Yoshihiro KANGAWA, Koichi Kakimoto, Ab initio Study of GaAs(100) Surfaces Under As2, H2, and N2 Influence, as a Model for Vapor-Phase Epitaxy of GaAs1-xNx, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
175. Satoshi Nakano, BING GAO, Masato Inoue, H. Harada, Y. Miyamura, T. Sekiguchi, Koichi Kakimoto, Evaluation of numerical analysis of residual strain and dislocation density in a multicrystalline silicon for solar cells with two different heating system, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
176. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Relationship between cooling flux direction and activation of slip systems of single -crystal silicon grown in [001] and [111] directions, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
177. Koichi Kakimoto, Crystal Growth of Single Crystals by Using a Seed-cast Method, 23rd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, 2013.07.
178. Akira Nagaoka, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Electrical properties of Cu2ZnSnS4 single crystal, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, 2013.01, Cu2ZnSnS4 (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se2 (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900̊C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path..
179. Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto, First principles approach to C aggregation process during 0th graphene growth on SiC(0001), 31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012.07, The C clustering process during the 0th graphene growth on SiC(0001) was investigated by a first principles approach. It was found that the structure of C clusters is not purely-hexagonal but penta-heptagonal, including pentagons and heptagons. We also revealed that mono-ring clusters, the lowest-energy clusters in vacuum, are no longer the ground-state configuration on SiC(0001). This result suggests a template effect of SiC(0001) for the growth of graphene..
180. Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shinichi Nishizawa, Analysis of growth velocity of SiC growth by the physical vapor transport method, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, 2012.05, Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2..
181. T. Tachibana, T. Sameshima, T. Kojima, K. Arafune, Koichi Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, A. Ogura, Evaluation of silicon substrates fabricated by seeding cast technique, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14, 2012, We evaluated the properties of crystalline defects in silicon substrate, and clarified the origin of small-angle grain boundaries. In order to eliminate the effects of grain boundaries, the ingot was fabricated by unidirectional solidification technique with seed crystal. In single-crystalline region, σ3 twin boundaries and SiC precipitates were observed near the seed crystal. No obvious correlation between twin boundaries and precipitates was observed. These defects decreased once and the precipitations appeared again. The density of precipitates increased through the crystal growth procedure. These precipitates were consisted of Si, C, and N. After the precipitation density increased, the small-angle grain boundaries appeared and some precipitates were observed at the boundaries. We considered the precipitation consisted of light element impurities such as C and N was one of the major origins of the small-angle grain boundary generation..
182. Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Tomonori Ito, Koichi Kakimoto, Akinori Koukitu, Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, 2011.12, Thermodynamic analysis was performed to investigate the coherent growth of GaAs 1-xN x thin films with low N content. In the present study, a new algorithm of the simulation code was developed to theoretically predict the relationship between solid composition and growth condition. This algorithm is applicable to wider varieties of combinations of gaseous sources than is the traditional algorithm. The system using trimethylgalllium (TMG), AsH 3, and NH 3 was analyzed with the new code, and the results showed that the required input partial pressure ratio of NH 3 to the group-V element is over 99% for incorporation of a small percent of N into a solid. It is difficult to incorporate N into the solid when the input V/III ratio is low, while in the case of a high input V/III ratio, stable growth with a small percent of N can proceed. In the case of coherently grown GaAs 1-xN x, the lattice constraint from the substrate would suppress the incorporation of nitrogen. On the other hand, a higher input Ga partial pressure ratio enhances the stable growth of GaAs 1-xN x with a small N content, though this condition tends to easily induce generation of dislocations. Furthermore, a much lower optimum N/As ratio in input gas can be achieved in the system with dimethylhydrazine (DMHy). This result confirms that the difference in gaseous sources has a great effect on N incorporation. When determining well-optimized experimental growth conditions, these influences including crystallinity should all be considered..
183. K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Y. Kangawa, and S. Nishizawa, Thermodynamic Analysis of SiC and AlN Growth by Physical Vapour Transport Method, DRIP-XIV, 2011.09.
184. Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, and Shin-ichi Nishizawa, Thermodynamic Analysis of SiC and AlN Growth by Physical Vapor Deposition, The 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 2011.09.
185. T. Tachibana, T. Sameshima, N. Miyazaki, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, and A. Ogura, Evaluation of crystalline defects in silicon ingots fabricated by seeding cast growth,, 26th European Photovoltaic Solar Energy Conference and Exhibition, 2011.09.
186. Bing GAO, Satoshi NAKANO, Koichi KAKIMOTO, High Purity Multicrystalline Silicon Production in Unidirectional Solidification Furnace, The 5th Asian Conference on Crystal Growth and Crystal Technology, 2011.06.
187. Zaoyang Li, Lijun Liu, Koichi Kakimoto, Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon, China Semiconductor Technology International Conference 2010, CSTIC 2010, 2010.12, In order to improve the accuracy and efficiency of global modeling of a directional solidification process for solar silicon, we developed a structured/unstructured combined mesh scheme. The multi-block structured mesh was used to discretize those subdomains with regular boundaries. The unstructured mesh was used to discretize those sub-domains wim highly irregular boundaries. Then it was applied in the global modeling of heat transfer for a directional solidification process to investigate the effect of argon flow rate on heat transfer and impurities transport (oxygen as an example) in the furnace. It was found that the argon flow has little effect on the global heat transfer compared with thermal radiation, while its effect on impurities transport is remarkable. The amount of oxygen carried away by the argon flow at the melt surface is closely correlated with the argon flow rate..
188. Xin Liu, Lijun Liu, Yuan Wang, Koichi Kakimoto, Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method, China Semiconductor Technology International Conference 2010, CSTIC 2010, 2010.12, A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface..
189. B. Gao, Koichi Kakimoto, S. Nakano, Numerical analysis of oxygen and carbon transport in a unidirectional solidification furnace, Photovoltaics for the 21 Century 5 - 216th ECS Meeting, 2010.12, A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was carried out for accurate prediction of distributions of carbon and oxygen impurities in multicrystalline silicon material for solar cells. Both the gas flow and silicon melt flow were coupled each other. Five chemical reactions were taken into account during the transportation of the impurities..
190. B. Gao, Koichi Kakimoto, S. Nakano, Numerical analysis of oxygen and carbon transport in a unidirectional solidification furnace, China Semiconductor Technology International Conference 2010, CSTIC 2010, 2010.12, A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was carried out for accurate prediction of distributions of carbon and oxygen impurities in multicrystalline silicon material for solar cells. Both the gas flow and silicon melt flow were coupled each other. Five chemical reactions were taken into account during the transportation of the impurities..
191. Koichi Kakimoto, Crystal growth of semiconductor bulk crystals, 14th International Summer School on Crystal Growth, ISSCG14, 2010.08, This course is aimed at showing how to grow bulk crystals by using several methods. The course involves the following points. The growth methods of Bridgman and Czochralski will be introduced. The course also focuses on the mechanism of some processes with consideration of the basic phenomenon. Experimental and numerical examples of the methods will also be introduced..
192. T.Yayama, Y. Kangawa, K. Kakimoto, Calculation of Phase Diagrams of Li3N-Al pseudo binary system for AlN Growth, The 3rd. International Symposium on Growth of III-Nitride 2010 (ISGN-3), 2010.07.
193. Xin Liu, Lijun Liu, Zaoyang Li, Yuan Wang, Koichi Kakimoto, Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation, ISTC/CSTIC 2009 (CISTC), 2009.12, Global simulations were performed for a large-scale CZ-Si growth system, in which three models were tested to predict the turbulent melt flow. The three turbulence models are the standard k-ε turbulence model using wall functions at solid boundaries, a modified two-layer k-ε turbulence model in RANS method and the standard Smagorinsky SGS model in LES method, respectively. The comparison of the simulation results obtained with these different models showed that each turbulence model has its own features in prediction of the melt convection and the melt-crystal interface shape in a large-scale CZ-Si growth system..
194. X. J. Chen, S. Nakano, L. J. Liu, Koichi Kakimoto, Simulation analysis of point defects in silicon ingot during unidirectional solidification process for solar cells, ISTC/CSTIC 2009 (CISTC), 2009.12, A transient global model was used to obtain the solution of a thermal field within the entire furnace of a unidirectional solidification process. The melt-solid interface shape was obtained by a dynamic interface tracking method. Then, based on the global solution of heat transfer, the effects of growth rate Vg, temperature gradient G and ratio Vg/G on point defects were analyzed. Finally, several different melt-solid interface shapes were obtained by using different solidification times. Then the effects of solidification time on ratio Vg/G and point defects were also studied..
195. Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X. J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa, Numerical analysis of Mc-Si crystal growth, 13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009, 2009.01, The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N 2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed..
196. Koichi Kakimoto, Time Dependent and/or 3D Investigation of Carbon, Nitrogen, and Dislocation Distributions in a Silicon Crystal During Solidification Process, 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, 2008.08.
197. LJ Liu, XJ Chen, S Nakano, N Takahashi, K Kakimoto, Investigation of a unidirectional solidification process for Si crystals with a transient global model, International Workshop on Science and Technology of Crystalline Si Solar Cells, 2006.10.
198. Lijun Liu, Satoshi Nakano, Koichi Kakimoto, Numerical analysis of an electromagnetic CZ-SI growth process by 3D global modeling, 2005 ASME Summer Heat Transfer Conference, HT 2005, 2005.12, Three-dimensional (3D) thermal flow of silicon melt in an electromagnetic Czochralski (CZ) system was numerically investigated with a recently developed 3D global model. The electromagnetic CZ system was established with a transverse magnetic field and an injected electric current applied on the melt surface. Different azimuthal and radial positions of the electrode on the melt surface were taken into account to investigate their influences on the heat and mass transfer in the melt, as well as on the melt-crystal interface. The influence of the electric current direction on the melt flow pattern and temperature distribution was also demonstrated. The results showed that the position of the electrode on the melt surface and the direction of the applied electric current play an important role in controlling the heat and mass transfer in the silicon melt..
199. Koichi Kakimoto, A. Murakawa, Y. Hashimoto, An investigation of thermal conductivity of isotope silicon as a function of temperature estimated by molecular dynamics, 2005.02, We investigated the effect of isotope concentration on thermal conductivity of silicon as a function of temperature by using equilibrium molecular dynamics simulation. It was found that thermal conductivity of silicon crystals was increased by purification of isotopes of a temperature near room temperature. At a temperature around 1000 K, the degradation of thermal conductivity based on the thermal effect became more dominant than that based on the isotope effect. Therefore, the discrepancy in thermal conductivities of silicon crystals with different isotope concentrations decreased..
200. Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto, Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique, Proceedings of the Fourth International Workshop on Modeling, 2004.05, The transport mechanism of supplied raw material in a double-crucible Czochralski system using the accelerated crucible rotation technique (ACRT) was investigated by three-dimensional and time-dependent numerical simulation. The calculation clarified that use of the ACRT resulted in enhancement of the mixing effect of the supplied raw material. It is, therefore, possible to maintain the composition of the melt in an inner crucible during crystal growth by using the ACRT. The effect of the continuous charge of the raw material on melt temperature was also investigated. Our results showed that the effect of feeding lithium niobate granules on melt temperature was small, since the feeding rate of the granules is small. Therefore, solidification of the melt surface due to the heat of fusion in this system is not likely..
201. Lijun Liu, Koichi Kakimoto, Numerical study of the effect of magnetic fields on melt-crystal interface-deflection in Czochralski crystal growth, 2003 ASME Summer Heat Transfer Conference (HT2003), 2003.12, In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process..
202. Numerical analysis of melt mixing using accelerated crucible rotation technique (ACRT).
203. Numerical analysis of LiNbO3 melt convection in the DCCZ process using ACRT.
204. Diffusion mechanism of an interstitial atom and a vacancy in solid GaAs.
205. Koichi Kakimoto, T. Umehara, H. Ozoe, Molecular dynamics analysis of point defects in silicon near solid-liquid interface, 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3), 1999.10, Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure..
206. Koichi Kakimoto, T. Umehara, H. Ozoe, Molecular dynamics analysis on diffusion of point defects, 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, 1999.09, Molecular dynamics simulation was carried out to estimate diffusion constants and mechanism of point defects such as a single vacancy and a self-interstitial atom under hydrostatic pressure. The Stillinger-Weber potential was used-as a model potential, which is widely accepted for modeling of silicon crystals and melts. We obtained the following results on a self-interstitial atom from the calculation. (1) Diffusion constants of self-interstitial are almost independent of pressure in the range from -50 to +50 kbar. (2) A self-interstitial atom diffuses with the formation of dumbbell structure, which is aligned in [1 1 0] direction. For single vacancy, the following clarified. (1) Diffusion constants of vacancy are also independent of pressure in the range from -40 to +40 kbar. (2) A vacancy diffuses with a switching mechanism to the nearest-neighbor atoms in lattice site..
207. Numerical computation of time-dependent heat and fluid flow in the Czochralski process under various configurations of a cusp-shaped magnetic field.
208. Convection pattern in the Czmelt under a transverse magnetic field.
209. Influence Seebeck effect on natural convection of liquid metal.
210. H. Fukui, Koichi Kakimoto, H. Ozoe, Convection under an axial magnetic field in a Czochralski configuration, Proceedings of the 1998 5th International Conference on Advanced Computational Methods in Heat Transfer, 1998, Numerical computations were carried out for the mixed convection of liquid metal in a Czochralski configuration under an axial magnetic field. A crystal rod was rotated and a crucible static. For a static crucible, an application of an axial magnetic field yielded a rotation of a fluid column under a crystal rod. This was due to complicated effects of a Lorentz force..
211. Masahito Watanabe, Minoru Eguchi, Koichi Kakimoto, Taketoshi Hibiya, Three-dimensional visualization of molten silicon convection, Winter Annual Meeting of the American Society of Mechanical Engineers, 1991, Molten silicon convection during single crystal growth by the Czochralski method was visualized three-dimensionally by the individually developed double-beam X-ray radiography system with solid tracer method. The purpose of the present paper is to clarify the three-dimensional structure of torus-like flow pattern of molten silicon which has low Prandtl number. The root-mean-square velocity for one specific tracer was 21 mm/sec. The most impressive result was as follows; a flow field with larger azimuthal velocity than the rotational velocity of the crucible exists just beneath the crystal, while the flow field with smaller or negative azimuthal velocity exists near the crucible wall. This azimuthal flow modulation can be explained by the Coriolis force..
212. Koichi Kakimoto, H. Ohno, R. Katsumi, Y. Abe, H. Hasegawa, T. Katoda, CHARACTERISATION OF THERMAL INSTABILITY IN GaAs-AlAs AND GaAs-InAs SUPERLATTICES WITH LASER RAMAN SPECTROSCOPY., 1985, Thermal instability of GaAs-AlAs and GaAs-InAs superlattices was studied by Raman spectroscopy. Samples with various periods and grown at various temperatures were investigated to understand the stability of interface in superlattice and to obtain an activation energy of mixing by thermal annealing. Mixing occurred more easily in GaAs-InAs strained superlattice than GaAs-AlAs strain-free superlattice. Samples grown at a lower temperature are more stable against thermal annealing than those grown at a higher temperature..