Kyushu University Academic Staff Educational and Research Activities Database
List of Reports
Yoshihiro KANGAWA Last modified date:2020.07.02

Professor / Division of Renewable Energy Dynamics / Research Institute for Applied Mechanics


Reports
1. Y. Kangawa, T. Hamada, T. Kimura, R. Katayama, T. Matsuoka, K. Kakimoto, Theoretical study on structural stability of InN grown by pressurized-reactor MOVPE, Extended abstracts of the 33rd Electronic Materials Symposium (EMS30), 2014.07.
2. T. Yayama, Y. Kangawa, K. Kakimoto, Theoretical investigation of the influence of growth orientation on indium incorporation efficiency during InGaN growth by MOVPE, Extended abstracts of the 31st Electronic Materials Symposium (EMS30), 2012.07.
3. M. Inoue, Y. Kangawa, H. Kageshima, K. Wakabayashi, K. Kakimoto,, Theoretical approach to anisotropic growth process of graphene on vicinal SiC(0001) surfaces tilting toward [1100], Extended abstracts of the 29th Electronic Materials Symposium (EMS29) (ISSN 1343-0343), 2011.07.
4. M. Inoue, Y. Kangawa, K. Wakabayash, K. Kakimoto, ", Tight-binding approach to initial stage of graphitization on SiC surface, Extended abstracts of the 29th Electronic Materials Symposium (EMS29) (ISSN 1343-0343), 139, 2010.07.
5. T. Yayama, Y. Kangawa, K. Kakimoto, Phase diagram of Li3N-Al pseudobinary system for AlN growth, Extended abstracts of the 29th Electronic Materials Symposium (EMS29) (ISSN 1343-0343), 197, 2010.07.
6. Y. Kangawa, N. Kuwano, K. Kakimoto, Microstructures in AlN/sapphire grown by vapor phase epitaxy using Al and Li3N, Extended abstracts of the 28th Electronic Materials Symposium (EMS28) (ISSN 1343-0343), 2009, H8, 187., 187, 2009.07.
7. T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu, Control of indium composition in coherently grown InGaN thin films, Extended abstracts of the 28th Electronic Materials Symposium (EMS28) (ISSN 1343-0343), 53, 2009.07.
8. Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto, Theoretical study of growth condition of cubic GaN, Extended abstracts of the 27th Electronic Materials Symposium (EMS27) (ISSN 1343-0343), 163, 2008.07.
9. T. Wakigawa, Y. Kangawa, K. Kakimoto, Solution growth of AlN using Al and Li3N under an atmospheric pressure, Extended abstracts of the 26th Electronic Materials Symposium (EMS26) (ISSN 1343-0343), 259, 2007.07.
10. A. Koukitu, K. Takemoto, Y. Matsuo, T. Iwamoto, Y. Kangawa, Y. Kumagai, MOVPE growth of GaN buffer layer directly on Si substrate, Extended abstracts of the 24th Electronic Materials Symposium (EMS24) (ISSN 1343-0343), 233, 2005.07.
11. T. Kawamura, Y. Kangawa, K. Kakimoto, Analysis of thermal conductivity of nitride alloy by molecular dynamics, Extended abstracts of the 24th Electronic Materials Symposium (EMS24) (ISSN 1343-0343), 101, 2005.07.
12. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Influence of lattice constraint from substrate on compositional instability of InAlGaN thin film, Extended abstracts of the 24th Electronic Materials Symposium (EMS24) (ISSN 1343-0343), 183, 2005.07.
13. J. Kikuchi, Y. Matsuo, Y. Kangawa, Y. Kumagai, A. Koukitu, Thermodynamic analyses of the MOVPE growth of indium containing nitrides using various nitrogen sources, Extended abstracts of the 23rd Electronic Materials Symposium (EMS23) (ISSN 1343-0343), 2004, E15., E15, 2004.01.
14. H. Murakami, M. Harada, Y. Kangawa, Y. Kumagai and A. Koukitu, “, High Fe doping during thick GaN layer growth on sapphire (0001), Extended abstracts of the 23rd Electronic Materials Symposium (EMS23) (ISSN 1343-0343), E9, 2004.01.
15. T. Yamane, H. Shikauchi, H. Murakami, Y. Kangawa, Y. Kumagai and A. Koukitu, Hydride vapor phase epitaxy of thick AlN layer on sapphire (0001) substrate, Extended abstracts of the 23rd Electronic Materials Symposium (EMS23) (ISSN 1343-0343), F2, 2004.01.
16. N. Kawaguchi, H. Murakami, Y. Kangawa, Y. Kumagai and A. Koukitu, “, Effect of periodic insertion of low-temperature GaN buffer layers during thick GaN layer growth on GaAs(111)A, Extended abstracts of the 22nd Electronic Materials Symposium (EMS22) (ISSN 1343-0343), 167, 2003.01.
17. K. Eriguchi, K. Takemoto, Y. Kangawa, Y. Kumagai and A. Koukitu, Growth of InAs1-xSbx layers on InAs(001) substrates using halide vapor phase epitaxy, Extended abstracts of the 22nd Electronic Materials Symposium (EMS22) (ISSN 1343-0343), 137, 2003.01.
18. Y. Kumagai, H. Murakami, Y. Kangawa, H. Seki and A. Koukitu, Temperature ramping rate dependence of thick GaN growth on GaN buffer/GaAs (111)A substrate, Extended abstracts of the 21st Electronic Materials Symposium (EMS21) (ISSN 1343-0343), 59, 2002.01.
19. Y. Kangawa, T. Ito, K. Nakamura, Y. Kumagai and A. Koukitu, Empirical potential-based approach to relative stability among tetrahedral clusters in bulk InGaN and InGaN/GaN, Extended abstracts of the 21st Electronic Materials Symposium (EMS21) (ISSN 1343-0343), 47, 2002.01.
20. A. Mori, B. B. Laird, Y. Kangawa, T. Ito and A. Koukitu, Monte Carlo simulation study of alloy phase diagrams of InGaN thin film on GaN and InN, Proc. of the Sixth Symposium on Atomic-Scale Surface and Interface Dynamics, Tokyo, 59, 2002.01.
21. Y. Kangawa, T. Ito, K. Shiraishi, A. Taguchi, A. Koukitu and T. Ohachi, “, Theoretical approach to control of thickness and composition of III-V semiconductor thin films, Proc. of the Sixth Symposium on Atomic-Scale Surface and Interface Dynamics, Tokyo, 55, 2002.01.
22. N. Kasae, A. Mori, T. Toyama, T. Ito and Y. Kangawa, Semigrand canonical Monte Carlo simulation toward the construction of InGaN alloy phase diagram, Proc. Fifth Symposium on Atomic-Scale Surface and Interface Dynamics, Tokyo, 2001, p425, 425, 2001.01.
23. Y. Kangawa, T. Ito, A. Mori and A. Koukitu, Empirical interatomic potential calculation for compositional instability of InGaN thin films grown on GaN and InN, Proc. Fifth Symposium on Atomic-Scale Surface and Interface Dynamics, Tokyo, 391, 2001.01.
24. T. Ito, Y. Kangawa, K. Shiraishi and A. Taguchi, Empirical potential-based approach for understanding epitaxial growth of semiconductors, Proc. Fifth Symposium on Atomic-Scale Surface and Interface Dynamics, Tokyo, 277, 2001.01.
25. Y. Kangawa, S. Sakaguchi and T. Ito, Relative stability of Ga on the high index GaAs surfaces, Proc. The Fifth International Seminar on Microstructures and Mechanical Properties of New Engineering Materials, Mie, 259, 2001.01.
26. Y. Kangawa, T. Ito, A. Mori and A. Koukitu, “, Empirical potential approach to thermodynamic stability of thin nitride films, Bulletin of the Stefan University, 13 (2001) 19, 2001.01.
27. Y. Kangawa, N. Kuwano and K. Oki, Theoretical investigation for ordering mechanism of InGaAs/(110)InP using empirical interatomic potential, Extended abstracts of the 18th Electronic Materials Symposium (EMS18) (ISSN 1343-0343), 213, 1999.01.
28. Y. Kangawa, N. Kuwano and K. Oki, TEM observation for the ordering mechanism of an InGaAs alloy grown on a (110)InP substrate, Proc. Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach, Kobe, 71, 1997.01.
29. C. Kojima, Y. Kangawa, N. Kuwano and K. Oki, TEM observation of microstructures in InAlAs/(110)InP, New Direction in Transmission Electron Microscopy and Nono-characterization of Materials, C. Kinoshita, Y. Tomokiyo, S. Matsumura (Eds.), the Research Laboratory for High Voltage Electron Microscopy, Kyushu University, Japan, 383, 1997.01.
30. Y. Kangawa, N. Kuwano and K. Oki, Monte Carlo analysis of microstructures in ordered III-V semiconductor alloys: Attempt of simulation for the triple period (TP-A) structure, Proc. MRS-J Symposium R; Novel Semiconducting Materials, Makuhari Messe, H. Oyanagi (Ed.), MRS-Japan, 26, 1996.01.
31. N. Kuwano, Y. Kangawa, M. Ishimaru and K. Oki, Ising model approach for the L10-ordering in III-V semiconductor alloys of (A, B)C, Proc. First Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach, Tokyo, 55, 1996.01.