Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Yoshihiro KANGAWA Last modified date:2020.07.02

Professor / Division of Renewable Energy Dynamics / Research Institute for Applied Mechanics


Papers
1. Daichi Yosho, Fumiya Shintaku, Yuya Inatomi, Yoshihiro Kangawa, Jun Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano, Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy, Physica Status Solidi - Rapid Research Letters, 10.1002/pssr.202000142, 14, 6, 2020.06, The oxygen incorporation kinetics of vicinal m(10−10) gallium nitride (GaN) growth during metal-organic vapor phase epitaxy is clarified using a diffusion equation-based approach that incorporates diffusion potentials obtained by large-scale density functional theory (DFT) calculations. A diffusion model based on the Burton, Cabrera and Frank (BCF) theory is proposed, and then, the oxygen concentration in the epitaxial films is calculated quantitatively. The calculation results agree with the experimental tendency that the oxygen concentration in the −c 5° off m-GaN epilayers is lower than that in the +c 5° off m-GaN epilayers. Then, the off-angle dependence of oxygen incorporation in vicinal m-GaN growth is predicted..
2. Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Małgorzata Wierzbowska, Stanisław Krukowski, First-Principles Calculation of Bandgaps of Al1−xInxN Alloys and Short-Period Al1−xInxN/Al1−yInyN Superlattices, Physica Status Solidi (B) Basic Research, 10.1002/pssb.201900530, 257, 4, 1900530-1-5, 2020.04.
3. Daichi Yosho, Yuya Inatomi, Yoshihiro Kangawa, Modeling carbon coverage on polar GaN surfaces during MOVPE, Japanese Journal of Applied Physics, 10.35848/1347-4065/ab80e2, 59, 048002-1-5, 2020.04.
4. F. Shintaku, D. Yosho, Y. Kangawa, J.-I. Iwata, A. Oshiyama, K. Shiraishi, A. Tanaka, H. Amano, Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE, Applied Physics Express, 10.35848/1882-0786/ab8723, 13, 055507-1-4, 2020.04.
5. Y. Inatomi, Y. Kangawa, Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE, Applied Surface Science, 10.1016/j.apsusc.2019.144205, 502, 144205-1-8, 2020.02.
6. Tsunashi Shimizu, Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa, Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions, Japanese Journal of Applied Physics, 10.35848/1347-4065/ab68af, 59, 028003-1-4, 2020.01.
7. Kenta Chokawa, Emi Makino, Norikazu Hosokawa, Shoichi Onda, Yoshihiro Kangawa, and Kenji Shiraishi, Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000-1), and (1-100) surfaces, Japanese Journal of Applied Physics, DOI: 10.7567/1347-4065/ab4c21, 58, 115501-1-7, 2019.10.
8. Pawel Kempisty, Yoshihiro Kangawa, Evolution of the free energy of the GaN (0001) surface based on first-principles phonon calculations, PHYSICAL REVIEW B, 10.1103/PhysRevB.100.085304, 100, 085304-1-12, 2019.08.
9. Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa, Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions, Japanese Journal of Applied Physics, 10.7567/1347-4065/ab040a, 58, SC1014-1-9, 2019.05.
10. Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, Electronic structure analysis of core structures of threading dislocations in GaN, 2019 Compound Semiconductor Week, CSW 2019 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, 10.1109/ICIPRM.2019.8819270, 2019.05.
11. Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa, CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films, Materials, 10.3390/ma12060972, 12, 6, 972-1-14, 2019.03.
12. Kieu My Bui, Jun Ichi Iwata, Yoshihiro Kangawa, Kenji Shiraishi, Yasuteru Shigeta, Atsushi Oshiyama, First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy, Journal of Crystal Growth, 10.1016/j.jcrysgro.2018.11.031, 507, 421-424, 2019.02.
13. Y. Inatomi, Yoshihiro Kangawa, A. Pimpinelli, T. L. Einstein, Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy, Physical Review Materials, 10.1103/PhysRevMaterials.3.013401, 3, 1, 013401-1-8, 2019.01.
14. Kenta Chokawa, Emi Makino, Norikazu Hosokawa, Shoichi Onda, Yoshihiro Kangawa, Kenji Shiraishi, Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (0001), and (1100) surfaces, Japanese Journal of Applied Physics, 10.7567/1347-4065/ab4c21, 58, 11, 2019.01, Chemical vapor deposition has been developed to enable defect-free 4H-SiC crystals to be grown at lower cost and with higher growth rates. However, the structure and stability of 4H-SiC surfaces during crystal growth has not been clarified. In this study, we performed first-principles calculations and obtained the surface energies of ideal surfaces and Si-terminated surfaces on (0001), (000) and (100) surfaces. For the (0001) and (000) surfaces, the Si-terminated surfaces are more stable than the ideal surfaces and Si atoms are adsorbed onto the surfaces up to high temperatures. The ideal surface on the (100) surface is stable, and the Si-terminated surface changes to an ideal surface at lower temperatures than on the (0001) and (000) surfaces. These results indicate the possible temperature ranges in which to perform crystal growth. Thus, we clarified the conditions required to grow 4H-SiC crystals and the dependency of these structures on surface orientation..
15. Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto, Toru Akiyama, First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth, Japanese Journal of Applied Physics, 10.7567/JJAP.57.115504, 57, 11, 115504-1-7, 2018.11.
16. Kieu My Bui, Jun Ichi Iwata, Yoshihiro Kangawa, Kenji Shiraishi, Yasuteru Shigeta, Atsushi Oshiyama, Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride, Journal of Physical Chemistry C, 10.1021/acs.jpcc.8b05682, 122, 43, 24665-24671, 2018.11.
17. Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy, Japanese Journal of Applied Physics, 10.7567/JJAP.57.04FJ03, 57, 4S, 04FJ03-1-4, 2018.03.
18. Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano, DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ) metalorganic vapor phase epitaxy, Applied Physics Letters, 10.1063/1.4991608, 111, 14, 2017.10, The carbon incorporation mechanism in GaN(0001) and GaN(000 1) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed..
19. T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, K. Kakimoto, First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 10.1002/pssb.201600706, 254, 8, 1600706-1-6, 2017.08.
20. Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto, First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN, ECS Transactions, 10.1149/08001.0295ecst, 80, 1, 295-301, 2017.08.
21. Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto, Modeling the non-equilibrium process of the chemical adsorption of ammonia on GaN(0001) reconstructed surfaces based on steepest-entropy-ascent quantum thermodynamics, Materials, 10.3390/ma10080948, 10, 8, 948-1-13, 2017.08.
22. A. Kusaba, Y. Kangawa, P. Kempisty, H. Valencia, K. Shiraishi, Y. Kumagai, K. Kakimoto, A. Koukitu, Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.56.070304, 56, 7, 070304-1-4, 2017.07.
23. Y. Inatomi, Y. Kangawa, T. Ito, T. Suski, Y. Kumagai, K. Kakimoto, A. Koukitu, Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.56.078003, 56, 7, 078003-1-3, 2017.07.
24. H. VALENCIA, Y. Kangawa, K. Kakimoto, Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As-2, H-2 and N-2, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2016.11.056, 468, 557-561, 2017.06.
25. K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi, First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2016.12.044, 468, 950-953, 2017.06.
26. Hubert Valencia, Yoshihiro Kangawa, Koichi Kakimoto, Ab initio model for GaAs1%xNx chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 10.7567/JJAP.56.060306, 56, 6, 060306-1-3, 2017.06.
27. K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K.Shiraishi, Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.56.04CJ04, 56, 4, 04CJ04-1-4, 2017.04.
28. Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu, Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy, Japanese Journal of Applied Physics, 10.7567/JJAP.56.038002, 56, 3, 038002-1-3, 2017.03.
29. Pawel Kempisty, Paweł Stra̧k, Konrad Sakowski, Yoshihiro Kangawa, Stanisław Krukowski, Thermodynamic foundations of applications of Ab initio methods for determination of the adsorbate equilibria: Hydrogen at the GaN(0001) surface, Physical Chemistry Chemical Physics, 10.1039/c7cp05214f, 19, 43, 29676-29684, 2017.01.
30. A. Kusaba, Y. Kangawa, P. Kempisty, K. Kakimoto, A. Koukitu, Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy, APPLIED PHYSICS EXPRESS, 10.7567/APEX.9.125601, 9, 12, 125601-1-4, 2016.12.
31. Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto, Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy, Japanese Journal of Applied Physics, 10.7567/JJAP.55.05FM01, 55, 5, 05FM01-1-4, 2016.05.
32. Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, Koichi Kakimoto, Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics, Japanese Journal of Applied Physics, 10.7567/JJAP.55.031301, 55, 3, 031301-1-5, 2016.03.
33. H. Valencia, Y. Kangawa, K. Kakimoto, Ab initio study of GaAs(100) surface stability over AS(2), H-2 and N-2 as a model for vapor-phase epitaxy of GaAs1-xNx, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2015.09.005, 432, 6-14, 2015.12.
34. Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto, Structural and optical properties of AlN grown by solid source solution growth method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.54.085501, 54, 8, 085501-1-5, 2015.08.
35. Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto, Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN, APPLIED PHYSICS EXPRESS, 10.7567/APEX.8.065601, 8, 6, 065601-1-3, 2015.06.
36. Y. Kangawa, T. Ito, A. Koukitu, K. Kakimoto, Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.100202, 53, 10, 100202-1-11, 2014.10.
37. T. Yayama, Y. Kangawa, K. Kakimoto, Role of the Surface N-H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE, JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 10.1252/jcej.13we309, 47, 7, 615-619, 2014.07.
38. R. Iguchi, T. Kawamura, Y. Suzuki, M. Inoue, Y. Kangawa, K. Kakimoto, Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001) and (000(1)over-bar), JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.065601, 53, 6, 065601-1-4, 2014.06.
39. T. Kawamura, H. Hayashi, T. Miki, Y. Suzuki, Y. Kangawa, K. Kakimoto, Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.05FL08, 53, 5, 05FL08-1-5, 2014.05.
40. M. Inoue, H. Kageshima, Y. Kangawa, K. Kakimoto, First principles approach to C aggregation process during 0th graphene growth on SiC (0001), AIP Conf. Proc., 1566, 129-130, 2013.12.
41. Koichi Ueno, Edson Gomes Camargo, Takashi Katsumata, Hiromasa Goto, Naohiro Kuze, Yoshihiro KANGAWA, Koichi Kakimoto, InSb Mid-Infrared Photon Detector for Room-Temperature Operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.52.092202, 52, 9, 092202-1-092202-6, 2013.09.
42. Yoshihiro KANGAWA, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Takashi Nakayama, Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach, MATERIALS, 10.3390/ma6083309, 6, 8, 3309-3360, 2013.08, [URL], We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed..
43. Tomoe Yayama, Yoshihiro KANGAWA, Koichi Kakimoto, Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.52.08JC02, 52, 8, 08JC02-1-08JC02-3, 2013.08.
44. Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, BING GAO, Yoshihiro KANGAWA, Koichi Kakimoto, Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process, INTERNATIONAL JOURNAL OF PHOTOENERGY, 10.1155/2013/706923, 706923, 2013.06.
45. J. Kawano, Y. Kangawa, T. Yayama, K. Kakimoto, A. Koukitu, Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.52.045601, 52, 4, 045601-1-045601-5, 2013.04.
46. Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto, First principles approach to C aggregation process during 0th graphene growth on SiC(0001), 31st International Conference on the Physics of Semiconductors, ICPS 2012 Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012, 10.1063/1.4848319, 1566, 129-130, 2013.01.
47. J. Kawano, Y. Kangawa, K. Kakimoto, N Substitution in GaAs(001) Surface under an Atmosphere of Hydrogen, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.51.10ND17, 51, 10, 10ND17-1-10ND17-4, 2012.10.
48. M. Inoue, H. Kageshima, Y. Kangawa, K. Kakimoto, First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001), PHYSICAL REVIEW B, 10.1103/PhysRevB.86.085417, 86, 8, 085417-1-085417-7, 2012.08.
49. T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, Y. Kangawa, K. Kakimoto, Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2012.01.023, 352, 1, 177-180, 2012.08.
50. T. Kawamura, Y. Kangawa, K. Kakimoto, Y. Suzuki, Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2012.04.022, 351, 1, 32-36, 2012.07.
51. J. Kawano, Y. Kangawa, T. Ito, K. Kakimoto, A. Koukitu, Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2011.12.079, 343, 1, 105-109, 2012.03.
52. T. Kawamura, Y. Kangawa, K. Kakimoto, S. Kotake, Y. Suzuki, Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.51.01AF06, 51, 1, 01AF06-1-01AF06-4, 2012.01.
53. Y. Kangawa, N. Kuwano, B. M. Epelbaum, K. Kakimoto, Microstructure of Bulk AlN Grown by A New Solution Growth Method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.50.120202, 50, 12, 120202-1-120202-3, 2011.12.
54. Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Tomonori Ito, Koichi Kakimoto, Akinori Koukitu, Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, 10.1109/PVSC.2011.6186002, 496-500, 2011.12.
55. Yoshihiro KANGAWA, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto, Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources, APPLIED PHYSICS EXPRESS, 10.1143/APEX.4.095501, 4, 9, 095501-1-095501-3, 2011.09, 窒化アルミニウムは深紫外LEDやパワーデバイス用の材料として期待されている。しかし、そのバルク成長技術は開発途上にある。本研究では、固体ソース溶液成長技術を開発し、窒化アルミニウムのバルク成長に適用した。新規溶液成長技術により、従来の窒素ガスを窒素原料とする低温溶液成長技術に比べ約2倍の成長速度を達成することに成功した。また、得られた窒化アルミニウム単結晶に含まれる貫通転位密度はハライド気相成長法により作製した単結晶と同程度であり、高品質結晶の成長が確認された。以上より、本研究で開発した固体ソース溶液成長技術の適用可能性が示唆された。.
56. T. Yayama, Yoshihiro KANGAWA, Koichi Kakimoto, Calculation of phase diagrams of the Li3N-Al system for AlN growth, PHYSICA STATUS SOLIDI C, 10.1002/pssc.201000888, 8, 5, 1581-1584, 2011.05.
57. M. Inoue, Yoshihiro KANGAWA, K. Wakabayashi, H. Kageshima, Koichi Kakimoto, Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.50.038003, 50, 3, 038003-1-038003-2, 2011.03.
58. Y. Kangawa, K. Kakimoto, Possibility of AlN growth using Li-Al-N solvent, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2010.04.014, 312, 18, 2569-2573, 2010.09.
59. T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu, Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films, PHYSICA STATUS SOLIDI C, 10.1002/pssc.200983475, 7, 7-8, 2249-2251, 2010.07.
60. Y. Kangawa, K. Kakimoto, AlN synthesis on AlN/SiC template using Li-Al-N solvent, PHYSICA STATUS SOLIDI A, 10.1002/pssa.200983566, 207, 6, 1292-1294, 2010.06.
61. H. Matsuo, S. Hisamatsu, Yoshihiro Kangawa, Koichi Kakimoto, Distributions of light elements and their precipitations grown by unidirectional solidification method in multicrystalline silicon for solar cells, ISTC/CSTIC 2009 (CISTC), ECS Transactions - ISTC/CSTIC 2009 (CISTC), 10.1149/1.3096569, 18, 1037-1042, 2009.12.
62. Koichi Kakimoto, X. J. Chen, L. J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu, Yoshihiro Kangawa, Heat and impurity transfer mechanisms of Czochralski and directional solidification processes, ISTC/CSTIC 2009 (CISTC), ECS Transactions - ISTC/CSTIC 2009 (CISTC), 10.1149/1.3096556, 925-933, 2009.12.
63. K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, B. Gao, X. J. Chen, L. J. Liu, Y. Kangawa, Numerical Analysis of mc-Si Crystal Growth, Solid State Phenomena , 156-158, 193-198, 2009.10.
64. T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu, Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.48.088004, 48, 8, 088004-088005, 2009.08.
65. T. Nagano, Y. Kangawa, K. Kakimoto, Influence of compositional changes of source materials on AlN synthesis using Li-Al-N solvent, PHYSICA STATUS SOLIDI C, 10.1002/pssc.200880908, 6, S336-S339, 2009.06.
66. Yoshihiro Kangawa, T. Akiyama, T. Ito, K. Shiraishi, Koichi Kakimoto, Theoretical approach to structural stability of GaN: How to grow cubic GaN, Journal of Crystal Growth, 10.1016/j.jcrysgro.2009.01.117, 311, 10, 3106-3109, 2009.05.
67. Y. Kangawa, T. Nagano, K. Kakimoto, Possibility of AlN vapor phase epitaxy using Li(3)N as a nitrogen source, PHYSICA STATUS SOLIDI C, 10.1002/pssc.200880910, 6, S340-S343, 2009.01.
68. H. Matsuo, S. Hisamatsu, Y. Kangawa, K. Kakimoto, Distribution of Light Elements in Multicrystalline Silicon for Solar Cells Grown by Directional Solidification, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 10.1149/1.3155433, 156, 9, H711-H715, 2009.01.
69. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2008.09.014, 311, 3, 463-465, 2009.01.
70. Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X. J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa, Numerical analysis of Mc-Si crystal growth, 13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009, Gettering and Defect Engineering in Semiconductor Technology XIII, GADEST 2009, 10.4028/www.scientific.net/SSP.156-158.193, 193-198, 2009.01.
71. T. Kawamura, D. Hori, Y. Kangawa, K. Kakimoto, M. Yoshimura, Y. Mori, Thermal Conductivity of SiC Calculated by Molecular Dynamics, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.47.8898, 47, 12, 8898-8901, 2008.12.
72. H. Matsuo, R. B. Ganesh, S. Nakano, L. J. Liu, Y. Kangawa, K. Arafune, Y. Oshita, M. Yamaguchi, K. Kakimoto, Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2008.08.045, 310, 22, 4666-4671, 2008.11.
73. R. B. Ganesh, H. Matsuo, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto, Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique, CRYSTAL GROWTH & DESIGN, 10.1021/cg800160g, 8, 7, 2525-2527, 2008.07.
74. R. B. Ganesh, H. Matsuo, T. Kawamura, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto, Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2008.01.049, 310, 11, 2697-2701, 2008.05.
75. T. Wakigawa, T. Nagano, Y. Kangawa, K. Kakimoto, Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2008.02.016, 310, 11, 2827-2831, 2008.05.
76. T. Kawamura, Y. Kangawa, K. Kakimoto, Investigation of the thermal conductivity of a fullerene peapod by molecular dynamics simulation, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2007.11.041, 310, 7-9, 2301-2305, 2008.04.
77. D. Kashiwagi, R. Gejo, Y. Kangawa, L. J. Liu, F. Kawamura, Y. Mori, T. Sasaki, K. Kakimoto, Global analysis of GaN growth using a solution technique, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2007.10.061, 310, 7-9, 1790-1793, 2008.04.
78. Koichi Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X. J. Chen, Yoshihiro Kangawa, Numerical investigation of crystal growth process of bulk Si and nitrides - A review, Crystal Research and Technology, 10.1002/crat.200711004, 42, 12, 1185-1189, 2007.12.
79. Y. Kangawa, T. Wakigawa, K. Kakimoto, Possibility of AlN solution growth using Al and Li3N, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.46.5785, 46, 9A, 5785-5787, 2007.09.
80. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Numerical study of the relationship between growth condition and atomic arrangement of InGaN, PHYSICA STATUS SOLIDI B, 10.1002/pssb.200674742, 244, 6, 1784-1788, 2007.06.
81. T. Kawamura, Y. Kangawa, K. Kakimoto, Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattices, Physica Status Solidi C, 10.1002/pssc.200674784, 4, 7, 2289-2292, 2007.06.
82. Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto, Ab initio-based approach on initial growth kinetics of GaN on GaN (001), JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2006.11.110, 301, 75-78, 2007.04.
83. Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto, Theoretical approach to initial growth kinetics of GaN on GaN(001), JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2006.10.203, 300, 1, 62-65, 2007.03.
84. Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu, Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer, Journal of Crystal Growth, 10.1016/j.jcrysgro.2006.10.204, 300, 1, 66-69, 2007.03.
85. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Analysis of compositional instability of InGaN by Monte Carlo simulation, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2006.10.017, 298, 190-192, 2007.01.
86. Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation, Journal of Crystal Growth, 10.1016/j.jcrysgro.2006.10.025, 298, SPEC. ISS, 251-253, 2007.01.
87. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Thermodynamic stability of In1-x-yGaxAlyN on GaN and InN, Physica Status Solidi C, 10.1002/pssc.200565106, 3, 6, 1700-1703, 2006.06.
88. T. Kawamura, Y. Kangawa, K. Kakimoto, Investigation of thermal conductivity of nitride mixed crystals and superlattices by molecular dynamics, Physica Status Solidi C, 10.1002/pssc.200565107, 3, 6, 1695-1699, 2006.06.
89. K. Takemoto, H. Murakami, T. Iwamoto, Y. Matsuo, Y. Kangawa, Y. Kumagai, A. Koukitu, Growth of GaN directly on Si(111) substrate by controlling atomic configuration of Si surface by metalorganic vapor phase epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.45.L478, 45, 17-19, L478-L481, 2006.05.
90. L. J. Liu, K. Tanahashi, H. Yamada-Kaneta, Y. Kangawa, K. Kakimoto, Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light, JOURNAL OF APPLIED PHYSICS, 10.1063/1.2189022, 99, 7, 073103-1-073103-4, 2006.04.
91. K. Sato, T. Ishibashi, K. Minami, H. Yuasa, J. Jogo, T. Nagatsuka, A. Mizusawa, Y. Kangawa, A. Koukitu, MBE growth of a novel chalcopyrite-type ternary compound MnGeP2, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 10.1016/j.jpcs.2005.09.098, 66, 11, 2030-2035, 2005.11.
92. T. Kawamura, Y. Kangawa, K. Kakimoto, Investigation of thermal conductivity of GaN by molecular dynamics, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2005.07.018, 284, 1-2, 197-202, 2005.10.
93. Akinori Koukitu, Jun Kikuchi, Yoshihiro Kangawa, Yoshinao Kumagai, Thermodynamic analysis of AlGaN HVPE growth, The Internbational Workshop on Bulk Nitride Semiconductors III Journal of Crystal Growth, 10.1016/j.jcrysgro.2005.03.010, 281, 1, 47-54, 2005.07.
94. Kazuyuki Minami, Jumpei Jogo, Valery Smirnov, Hideki Yuasa, Toshikazu Nagatsuka, Takayuki Ishibashi, Yoshitaka Morishita, Yuriko Matsuo, Yoshihiro Kangawa, Akinori Koukitu, Katsuaki Sato, Growth of MnGeP2 thin films by molecular beam epitaxy, Japanese Journal of Applied Physics, Part 2: Letters, 10.1143/JJAP.44.L265, 44, 8-11, L265-L267, 2005.06.
95. T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Y. Kangawa, A. Koukitu, K. Sato, MnGeP2 thin films grown by molecular beam epitaxy, JOURNAL OF SUPERCONDUCTIVITY, 10.1007/s10948-005-2154-8, 18, 1, 79-82, 2005.02.
96. H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai, A. Koukitu, Impact of crystallization manner of the buffer layer on the crystalline quality of GaN epitaxial layers on GaAs (111)A substrate, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2004.11.197, 275, 1-2, E1149-E1154, 2005.02.
97. Y. Matsuo, N. Kawaguchi, M. Fujino, Y. Kangawa, Y. Kumagai, T. Irisawa, A. Koukitu, GaN growth process using GaP(111)A and (111)B surfaces as an initial substrate, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2004.11.215, 275, 1-2, E1631-E1636, 2005.02.
98. Y. Kumagai, H. Murakami, Y. Kangawa, A. Koukitu, Growth and characterization of thick GaN layers with high Fe doping, Physica Status Solidi C, 10.1002/pssc.200461410, 2, 7, 2058-2061, 2005.01.
99. T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, A. Koukitu, Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy, Physica Status Solidi C, 10.1002/pssc.200461551, 2, 7, 2062-2065, 2005.01.
100. Yoshihiro Kangawa, Norihito Kawaguchi, Yoshinao Kumagai, Akinori Koukitu, Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.08.095, 272, 1-4 SPEC. ISS., 444-448, 2004.12.
101. Yoshinao Kumagai, Jun Kikuchi, Yuriko Matsuo, Yoshihiro Kangawa, Ken Tanaka, Akinori Koukitu, Thermodynamic analysis of InN and InxGa1-xN MOVPE using various nitrogen sources, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.08.090, 272, 1-4 SPEC. ISS., 341-347, 2004.12.
102. Tomonori Ito, Kazumi Tsutsumida, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima, Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces, Applied Surface Science, 10.1016/j.apsusc.2004.06.125, 237, 1-4, 194-199, 2004.10.
103. Koichi Asano, Yoshihiro Kangawa, Hirotoshi Ishizaki, Toru Akiyama, Kohji Nakamura, Tomononori Ito, Theoretical investigations of adatom behavior on non-planar surfaces with GaAs(n 1 1)A, Applied Surface Science, 10.1016/j.apsusc.2004.06.126, 237, 1-4, 206-212, 2004.10.
104. Norihito Kawaguchi, Ken Nosuke Hida, Yoshihiro Kangawa, Yoshinao Kumagai, Akinori Koukitu, Pulse laser assisted MOVPE for InGaN with high indium content, Physica Status Solidi (A) Applied Research, 10.1002/pssa.200405067, 201, 12, 2846-2849, 2004.09.
105. Yoshihiro Kangawa, Norihito Kawaguchi, Ken Nosuke Hida, Yoshinao Kumagai, Akinori Koukitu, Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction, Japanese Journal of Applied Physics, Part 2: Letters, 10.1143/JJAP.43.L1026, 43, 8A, L1026-L1028, 2004.08.
106. Hisashi Murakami, Yoshihiro Kangawa, Yoshinao Kumagai, Akinori Koukitu, Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.04.107, 268, 1-2, 1-7, 2004.07.
107. Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Yoshihiro Kangawa, A. Koukitu, Hydride vapor phase epitaxy of AlN: Thermodynamic analysis of aluminum source and its application to growth, 5th International Conference on Nitride Semiconductors, ICNS 2003, Physica Status Solidi C: Conferences, 10.1002/pssc.200303360, 7, 2498-2501, 2003.12.
108. H. Murakami, N. Kawaguchi, Yoshihiro Kangawa, Y. Kumagai, A. Koukitu, Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers, 5th International Conference on Nitride Semiconductors, ICNS 2003 Physica Status Solidi C: Conferences, 10.1002/pssc.200303503, 7, 2141-2144, 2003.12.
109. Yoshihiro Kangawa, T. Ito, Y. Kumagai, A. Koukitu, Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE, 5th International Conference on Nitride Semiconductors, ICNS 2003 Physica Status Solidi C: Conferences, 10.1002/pssc.200303538, 7, 2575-2579, 2003.12.
110. Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa, Akinori Koukitu, Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: Semigrand canonical Monte Carlo simulation, 5th International Conference on Nitride Semiconductors, ICNS 2003, Physica Status Solidi C: Conferences, 10.1002/pssc.200303347, 7, 2486-2489, 2003.12.
111. Takashi Suda, Yoshihiro Kangawa, Kohji Nakamura, Tomonori Ito, An empirical potential approach to structural stability of GaNxAs<>sub1-x, Journal of Crystal Growth, 10.1016/S0022-0248(03)01556-2, 258, 3-4, 277-282, 2003.11.
112. A. Mori, B. B. Laird, Yoshihiro Kangawa, T. Ito, A. Koukitu, Semigrand canonical Monte Carlo simulation with the Gibbs-Duhem integration technique: Formulation for alloy phase diagrams and attempt on InxGa1-xN/GaN, Russian Journal of Physical Chemistry A, 77, SUPPL. 1, S21, 2003.07.
113. Shigeo Kotake, Takaya Hasegawa, Kazutaka Kamiya, Yasuyuki Suzuki, Takami Masui, Yoshihiro Kangawa, Kohji Nakamura, Tomonori Ito, Effect of Ni-Cu substrates on phase selection of hexagonal and cubic boron nitride thin films, Applied Surface Science, 10.1016/S0169-4332(03)00514-2, 216, 1-4 SPEC., 72-77, 2003.06.
114. Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima, Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films, Applied Surface Science, 10.1016/S0169-4332(03)00398-2, 216, 1-4 SPEC., 458-462, 2003.06.
115. Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE, Applied Surface Science, 10.1016/S0169-4332(03)00396-9, 216, 1-4 SPEC., 453-457, 2003.06.
116. Yoshinao Kumagai, Hisashi Murakami, Yoshihiro Kangawa, Akinori Koukitu, High temperature ramping rate for GaAs (111)A substrate covered with a thin GaN buffer layer for thick GaN growth at 1000°C, Japanese Journal of Applied Physics, Part 2: Letters, 42, 5B, L526-L528, 2003.05.
117. Yuriko Matsuo, Yoshihiro Kangawa, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu, Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 42, 5 A, 2578-2581, 2003.05.
118. Atsushi Mori, Brian B. Laird, Yoshihiro Kangawa, Tomonori Ito, Akinori Koukitu, Semigrand canonical Monte Carlo simulation with Gibbs-Duhem integration technique for alloy phase diagrams, Materials Physics and Mechanics, 6, 1, 49-57, 2003.03.
119. Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi, Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy, Japanese Journal of Applied Physics, Part 2: Letters, 10.1143/JJAP.42.L95, 42, 2 A, L95-L98, 2003.02.
120. Y. Kangawa, T. Ito, Y. Kumagai and A. Koukitu, Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE, Phys. Stat. Sol. (c), 0, p2575, 2003.01.
121. H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai and A. Koukitu, Improvements in crystalline quality of thick GaN layers on GaAs(111)A by periodic insertion of low-temperature GaN buffer layers, Phys. Stat. Sol. (c), 0, p2141, 2003.01.
122. Yoshihiro Kangawa, T. Ito, Y. S. Hiraoka, A. Taguchi, K. Shiraishi, T. Ohachi, Theoretical approach to influence of As2 pressure on GaAs growth kinetics, Surface Science, 10.1016/S0039-6028(02)01259-1, 507-510, 285-289, 2002.06.
123. Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Irisawa, T. Ohachi, Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1), Applied Surface Science, 10.1016/S0169-4332(01)00930-8, 190, 1-4, 517-520, 2002.05.
124. Tomonori Ito, Yoshihiro Kangawa, An empirical potential approach to wurtzite-zinc blende structural stability of semiconductors, Journal of Crystal Growth, 10.1016/S0022-0248(01)01902-9, 235, 1-4, 149-153, 2002.02.
125. Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(1 0 0) and (n11)A surfaces, Journal of Crystal Growth, 10.1016/S0022-0248(01)01910-8, 237-239, 1 4 I, 223-226, 2002.01.
126. Tomonori Ito, Yoshihiro Kangawa, Theoretical investigations of thermodynamic stability for Si1-x-yGexCy, Journal of Crystal Growth, 10.1016/S0022-0248(01)01867-X, 237-239, 1 4I, 116-120, 2002.01.
127. Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces, Surface Science, 10.1016/S0039-6028(01)01210-9, 493, 1-3, 178-181, 2001.11.
128. A. Taguchi, K. Shiraishi, T. Ito, Yoshihiro Kangawa, Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface, Surface Science, 10.1016/S0039-6028(01)01209-2, 493, 1-3, 173-177, 2001.11.
129. Y. Kangawa, K. Wakizono, N. Kuwano, K. Oki, T. Ito, Formation mechanism of Al-segregated region in InAlAs/(110)InP, J. Cryst. Growth, 10.1016/S0022-0248(01)01113-7, 229, 1, 164-168, 229, p164, 2001.01.
130. Y. Kangawa, T. Ito, A. Mori, A. Koukitu, Empirical Interatomic potential calculation for compositional instability of III-V nitride alloys in lattice mismatch systems, Proc. Int. Workshop on Nitride Semiconductors, p681, 2000.01.
131. Y. Kangawa and T. Ito, A new empirical interatomic potential for compound semiconductors and its application to thermodynamic stability, Proc. 27th International Symposium on Compound Semiconductors, p173, 2000.01.
132. Y. Kangawa, N. Kuwano, K. Oki, T. Ito, Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP, Appl. Surf. Sci., 10.1016/S0169-4332(00)00109-4, 159, 368-373, 159-160, p368, 2000.01.
133. Yoshihiro Kangawa, T. Ito, A. Mori, A. Koukitu, Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN, Journal of Crystal Growth, 10.1016/S0022-0248(00)00845-9, 220, 4, 401-404, 2000.01.
134. Y. Kangawa, M. Suenaga, N. Kuwano, K. Oki, Numerical calculation with empirical interatomic potential for ordering mechanism of InGaAs/(110)InP, Proc. of International Conference on Solid-Solid Phase Transformations ’99 (JIMIC-3), 661-664, p661, 1999.01.
135. Y. Kangawa, N. Kuwano, K. Oki, Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP, Jpn. J. Appl. Phys., 10.1143/JJAP.38.40, 38, 1A, 40-41, 38, p40, 1999.01.
136. Yoshihiro Kangawa, Noriyuki Kuwano, Kensuke Oki, Tomonori Ito, Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential, 日本金属学会誌, 10.2320/jinstmet1952.63.6_741, 63, 6, 741-746, 1999.01.