| 1. |
N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang, N-type characteristics of undoped GeSn in the low Sn concentration region, 13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.01. |
| 2. |
H. Kuwazuru, S. Nasu, D. Wang, and K. Yamamoto, Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure, 13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.01. |
| 3. |
L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto, Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization, 13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.01. |
| 4. |
K. Yamamoto (Invited), D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw, Ge-on-Insulator from Ge-on-Nothing and Layer Transfer, 13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023.01. |
| 5. |
Ching-hsiang Yang, Dong Wang, Wei-chen Lee, Huan-kai Chau, Offline Tool Wear Detection Based On Deep Learning For Audio Signals, 24th Cross Straits Symposium on Energy and Environmental Science and Technology, 2022.12. |
| 6. |
Shingo Nasu, Dong Wang, Keisuke Yamamoto, ESTABLISHMENT OF A LOW-TEMPERATURE FABRICATION PROCESS FOR SPINTRONICS APPLICATION OF Ge MOSFETs, 24th Cross Straits Symposium on Energy and Environmental Science and Technology, 2022.12. |
| 7. |
L. Huang, K. Moto, T. Ishiyama, K.Toko, D. Wang, K.Yamamoto, N-type doping into polycrystalline Ge thin-film on glass, 2022年(令和4年度)応用物理学会九州支部学術講演会, 2022.11. |
| 8. |
W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Fabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator, 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), 2022.09. |
| 9. |
N. Shimizu, Y. Wang, K. Yamamoto,S. Zhang, S. Shibayama, O. Nakatsuka, D. Wang, Electrical characteristics of metal/GeSn contacts in lateral Schottky diodes, The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022), 2022.08. |
| 10. |
K. Yamamoto (Invited), T. Matsuo, D. Wang, K. Moto, K. Toko, H. Nakashima, Novel group IV semiconductor materials and devices for beyond Si technology, The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022), 2022.08. |
| 11. |
S. Nasu, T. Matsuo, K. Yamamoto, D. Wang, Fabrication of Ge MOSFET at low temperature (~250 C) for spintronics application, The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022), 2022.08. |
| 12. |
Kanta Nagamatsu, Keisuke Yamamoto and Dong Wang, IMPACT OF FILM THICKNESS ON PHOTOLUMINESCENCE INTENSITY OF SMART-CUT GERMANIUM-ON-INSULATOR SUBSTRATES, 23nd Cross Straits Symposium on Energy and Environmental Science and Technology, 2021.12. |
| 13. |
K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, H. Uratani, Y. Sakaida, K. Kawamura, Achievement of High Channel Mobility of 3C-SiC n-MOSFET with the Gate Stack Formed at Low Temperature, 2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY, 2021.11. |
| 14. |
K. Yamamoto, K. Iseri, D. Wang, H. Nakashima, Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer, 2021 International Conference on Solid State Devices and Materials (SSDM2021), 2021.09. |
| 15. |
K. Yamamoto, D. Wang, H. Nakashima, Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer, 239th ECS meeting, 2021.05. |
| 16. |
Dong WANG, Ge-based semiconductor devices for future ULSI --- Development of fundamental fabrication technologies, Westlake Engineering Colloquium, 2021.05. |
| 17. |
Keisuke Sugata,, Kanta Nagamatsu, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima, INVESTIGATION OF DIRECT BAND GAP LIGHT EMISSION IN MESA ETCHED Pt/Ge/TiN STRUCTURE, 22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST), 2020.12. |
| 18. |
Noboru Shimizu, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima, FORMATION OF Ge MIRROR PLANE WITH HIGH SPEED WET ETCHING FOR ETCHBACK Ge-ON-INSULATOR FABRICATION, 22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST), 2020.12. |
| 19. |
Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima, FABRICATION AND CHARACTERIZATION OF GERMANIUM GATE STACK WITH THERMALLY OXIDIZED YTTRIUM AND SCANDIUM DIELECTRICS, 22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST), 2020.12. |
| 20. |
H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy, PRiME2020, 2020.10. |
| 21. |
N. Shimizu, K. Yamamoto, D. Wang, H. Nakashima, Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication, PRiME2020, 2020.10. |
| 22. |
H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities, 2020 International Conference on Solid State Devices and Materiaals (SSDM2020), 2020.09. |
| 23. |
W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy, 8th International Symposium on Control of Semiconductor Interfaces, 2019.11. |
| 24. |
D. Wang, T. Maekura, K. Yamamoto, H. Nakashima, Enhancement of direct band gap electroluminescence in asymmetric metal/Ge/metal diodes, TACT 2019 International Thin Film Conference, 2019.11. |
| 25. |
H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy, 236th ECS meeting, 2019.10. |
| 26. |
W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy, 2019年第80回応用物理学会秋季学術講演会, 2019.09. |
| 27. |
R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC, 2019 International Conference on Solid State Devices and Materiaals (SSDM2019), 2019.09. |
| 28. |
K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Low temperature ( |
| 29. |
W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy, 2nd Joint ISTDM / ICSI 2019 Conference, 2019.06. |
| 30. |
K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di, Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination, 2nd Joint ISTDM / ICSI 2019 Conference, 2019.06. |
| 31. |
W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima, Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks, 12th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.12. |
| 32. |
K. Yamamoto, K. Akiyama, K. Iseri, W.-C. Wen, D. Wang, H. Nakashima, Fabrication of Ge MOS Capacitor by Metal Yttrium Oxidation, 12th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.12. |
| 33. |
Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima, Border trap characterization using deep-level transient spectroscopy for GeO2/Gegate stacks grown by thermal oxidation and plasma oxidation, シリコン材料の科学と技術フォーラム2018, 2018.11. |
| 34. |
Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima, Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application, 2018年第79回応用物理学会秋季学術講演会, 2018.09. |
| 35. |
K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application, 2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.09. |
| 36. |
T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, 2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.09. |
| 37. |
K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di, Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator, 2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.09. |
| 38. |
D. Wang, T. Maekura, K. Yamamoto, H. Nakashima, Direct band gap electroluminescence and photo detection in asymmetric metal/Ge/metal diodes, Collaborative Conference on Materials Research (CCMR) 2018, 2018.06. |
| 39. |
W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG and H. Nakashima, Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation, 2018年第65回応用物理学会春季学術講演会, 2018.03. |
| 40. |
H. Nakashima, W.-C. Wen, K. Yamamoto and DONG WANG, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, 11th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.02. |
| 41. |
H. Nakashima, H. Okamoto, K. Yamamoto, and DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer, 232nd ECS meeting, 2017.10. |
| 42. |
T. Sakaguchi, K. Akiyama, K. Yamamoto, DONG WANG, and H. Nakashima, Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs, 2017 International Conference on Solid State Devices and Materiaals (SSDM2017), 2017.09. |
| 43. |
W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation
using deep-level transient spectroscopy, 2017 International Conference on Solid State Devices and Materiaals (SSDM2017), 2017.09. |
| 44. |
W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy, 2017年第78回応用物理学会秋季学術講演会, 2017.09. |
| 45. |
W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.05. |
| 46. |
T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.05. |
| 47. |
DONG WANG, Towards an energy-saving society – the shrinking transistors, CAMPUS Asia EEST 2nd stage Kick-off Symposium, 2017.02. |
| 48. |
Keisuke Yamamoto, H. Okamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, 2017.02. |
| 49. |
T. Maekura, C. Motoyama, K. Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, 2017.02. |
| 50. |
C. Motoyama, T. Maekura, K. Tanaka, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima, Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes, 平成28年度応用物理学会九州支部学術講演会 International Session, 2016.12. |
| 51. |
W.-C. Wen, Y. Nagatomi, Liwei Zhao, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation, 平成28年度応用物理学会九州支部学術講演会 International Session, 2016.12. |
| 52. |
T. Tateyama, Y. Nagatomi, S. Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN source/drain structure, 平成28年度応用物理学会九州支部学術講演会 International Session, 2016.12. |
| 53. |
Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG, Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, JSPS Core-to-Core Program “Atomically Controlled Processing for Ultralarge Scale Integration”, 2016.11. |
| 54. |
H. Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 2016 International Conference on Solid State Devices and Materials, 2016.09. |
| 55. |
Keisuke Yamamoto, H. Okamoto, DONG WANG, Hiroshi Nakashima, Characterization of Ge Tunnel FET with Metal/Ge Junction, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06. |
| 56. |
Y. Nagatomi, S. Tanaka, T. Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06. |
| 57. |
DONG WANG, Direct band gap light emission and detection at room temperature in bulk Ge diodes, The 2nd Joint Symposium of Kyushu University and Yonsei University, 2016.02. |
| 58. |
Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2016.01. |
| 59. |
Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2016.01. |
| 60. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices, The 2nd International Conference & Exhibition for Nanopia, 2015.11. |
| 61. |
DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes, American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10. |
| 62. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation, American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10. |
| 63. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices, 228th ECS Meeting, 2015.10. |
| 64. |
Takayuki Maekura, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima, Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes, 2015 International Conference on Solid State Devices and Materials (SSDM2015), 2015.09. |
| 65. |
Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance, 2015 International Conference on Solid State Devices and Materials (SSDM2015), 2015.09. |
| 66. |
DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05. |
| 67. |
Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05. |
| 68. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida, Contact Formation for Metal Source/Drain Ge-CMOS, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05. |
| 69. |
Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2015.01. |
| 70. |
Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2015.01. |
| 71. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida, Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge, JSPS Core-to-Core Program,“Atomically Controlled Processing for Ultralarge Scale Integration”, 2014.11. |
| 72. |
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack, 226th ECS Meeting, 2014.10. |
| 73. |
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD, 2014 International Conference on Solid State Devices and Materials (SSDM2014), 2014.09. |
| 74. |
DONG WANG, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06. |
| 75. |
Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06. |
| 76. |
Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration", 2014.01. |
| 77. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Fabrication of Ge MOS and Ge Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration", 2014.01. |
| 78. |
Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height, 224th ECS Meeting, 2013.10. |
| 79. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts, 224th ECS Meeting, 2013.10. |
| 80. |
Keisuke Yamamoto, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06. |
| 81. |
Keisuke Yamamoto, Kojiro Asakawa, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06. |
| 82. |
Kota Hatayama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06. |
| 83. |
DONG WANG, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06. |
| 84. |
Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Contact Formations for Schottky Source/Drain Ge-CMOS, 6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2013.02. |
| 85. |
Hiroshi Nakashima, K. Yamamoto, H. Yang, DONG WANG, Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs, 222nd ECS Meeting, 2012.10. |
| 86. |
T. Sada, K. Yamamoto, H. Yang, DONG WANG, Hiroshi Nakashima, High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain, 2012 International Conference on Solid State Devices and Materials, 2012.09. |
| 87. |
K. Asakawa, K. Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET, 2012 International Conference on Solid State Devices and Materials, 2012.09. |
| 88. |
S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers, 2012 International Conference on Solid State Devices and Materials, 2012.09. |
| 89. |
Takeshi Yamanaka, Keisuke Yamamoto, Keita Sakamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima, High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate, 2011 International Conference on Solid State Devices and Materials (SSDM2011), 2011.09. |
| 90. |
Keita Sakamoto, Yoshiaki Iwamura, Keisuke Yamamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima, Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO2/GeO2 Bilayer by Nitrogen Incorporation, 2011 International Conference on Solid State Devices and Materials (SSDM2011), 2011.09. |
| 91. |
DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-on-insulator, China Semiconductor Technology International Conference 2011 (CSTIC2011), 2010.03. |
