| 1. |
W.-C. Wen, D. Wang, H. Nakashima, K. Yamamoto, Fabrication and Characterization of Germanium n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator: Formation of underlying Germanium Oxide and Its Electrical Characteristics, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2023.107504, 162, 107504-1-107504-6, 2023.08. |
| 2. |
K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, H. Uratani, Y. Sakaida, K. Kawamura, High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature - the importance of Coulomb scattering suppression, Applied Physics Express, 10.35848/1882-0786/ac7846, 15, 7, 071008-1-071008-6, 2022.06. |
| 3. |
K. Yamamoto, K. Iseri, D. Wang, H. Nakashima, Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer, Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials (SSDM2021), 75-76, 2021.09. |
| 4. |
K. Yamamoto, D. Wang, H. Nakashima, Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optelectronics Applications, ECS transactions, 10.1149/10404.0157ecst, 104, 4, 157-166, 2021.10. |
| 5. |
K. Yamamoto, D. Wang, H. Nakashima, Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer, ECS transactions, 10.1149/10204.0063ecst, 102, 4, 63-71, 2021.05. |
| 6. |
H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy, ECS transactions, 10.1149/09805.0395ecst, 98, 5, 395-404, 2020.10. |
| 7. |
H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM2020), 33-34, 2020.09. |
| 8. |
Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET, AIP Advances, 10.1063/5.0002100, 10, 065119-1-065119-7, 2020.06. |
| 9. |
R. Oka, K. Yamamoto, H. Akamine, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.35848/1347-4065/ab6862, 59, SG, SGGD17-1-SGGD17-10, 2020.02. |
| 10. |
K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di, Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination, ECS transactions, 10.1149/09301.0073ecst, 93, 1, 73-77, 2019.10. |
| 11. |
H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy, ECS transactions, 10.1149/09204.0003ecst, 92, 4, 3-10, 2019.10. |
| 12. |
K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Low temperature (Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019.09. |
| 13. |
R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC, Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019.09. |
| 14. |
K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Low temperature (Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials (SSDM2019), 315-316, 2019.09. |
| 15. |
T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, and D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/1347-4065/aafb5e, 58, B, SBBE05-1-SBBE05-6, 2019.04. |
| 16. |
K. Yamamoto, K. Nakae, D. Wang, H. Nakasima, Z. Xue, M. Zhang, and Z. Di, Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/1347-4065/ab02e3, 58, B, SBBA14-1-SBBA14-7, 2019.04. |
| 17. |
W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima, Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy, Journal of Applied Physics, 10.1063/1.5055291, 124, 20, 205303-1-205303-11, 2018.11. |
| 18. |
K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima, Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 10.1088/1361-6641/aae4bd, 33, 11, 114011-1-114011-7, 2018.11. |
| 19. |
K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di, Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator, Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), 847-848, 2018.09. |
| 20. |
T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate , Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), 543-544, 2018.09. |
| 21. |
K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application, Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), 315-316, 2018.09. |
| 22. |
T. Kanashima, R. Yamashiro, M. Zenitaka, Keisuke Yamamoto, DONG WANG, J. Tadano, S. Yamada, H. Nohira, Hiroshi Nakashima, K. Hamaya, Electrical properties of epitaxial Lu- or Y-doped La2O3/ La2O3/Ge high-k gate-stacks, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.016, 70, 260-264, 2017.11. |
| 23. |
Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Liwei Zhao, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.014, 70, 246-253, 2007.11. |
| 24. |
Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.09.024, 70, 283-287, 2017.11. |
| 25. |
H. Nakashima, H. Okamoto, K. Yamamoto, and DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer, ECS Transactions, 10.1149/08004.0097ecst , 80, 4, 97-106, 2017.10. |
| 26. |
T. Sakaguchi, K. Akiyama, K. Yamamoto, DONG WANG, and H. Nakashima , Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs, Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017), 529-530, 2017.09. |
| 27. |
W. -C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy, Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017), 505-506, 2017.09. |
| 28. |
T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, K. Yamamoto, H. Nakashima, and DONG WANG, Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes, Semiconductor Science and Technology, 10.1088/1361-6641/aa827f, 32, 10, 104001-1-104001-6, 2017.10. |
| 29. |
Y. Nagatomi, T. Tateyama, S. Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using an embedded TiN-source/drain structure, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 10.1088/1361-6641/32/3/035001, 32, 3, 035001-1-035001-8, 2017.03. |
| 30. |
Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.55.04EH08, 55, 4S, 04EH08-1-04EH08-6, 2016.04. |
| 31. |
Hayato Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials (SSDM2016), 642-643, 2016.09. |
| 32. |
DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure, THIN SOLID FILMS, 10.1016/j.tsf.2015.09.074, 602, 43-47, 2016.03. |
| 33. |
K. Kasahara, Yuta Nagatomi, Keisuke Yamamoto, H. Higashi, M. Nakano, S. Yamada, DONG WANG, Hiroshi Nakashima, K. Hamaya, Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates, APPLIED PHYSICS LETTERS, 10.1063/1.4932376, 107, 14, 142102-1-142102-5, 2015.10. |
| 34. |
Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance, Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015), 28-29, 2015.09. |
| 35. |
Takayuki Maekura, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima, Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes, Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015), 606-607, 2015.09. |
| 36. |
Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, M. Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge, Journal of Applied Physics, 10.1063/1.4930573, 118, 11, 115701-1-115701-12, 2015.09. |
| 37. |
Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices, The Electrochemical Society Transactions, 10.1149/06910.0055ecst, 69, 10, 55-66, 2015.10. |
| 38. |
Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.54.070306, 54, 7, 070306-1-070306-4, 2015.07. |
| 39. |
DONG WANG, Takayuki Maekura, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure, APPLIED PHYSICS LETTERS, 10.1063/1.4913261, 106, 7, 071102-1-071102-4, 2015.02. |
| 40. |
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack, The Electrochemical Society Transactions, 10.1149/06406.0261ecst, 64, 6, 261-266, 2014.10. |
| 41. |
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD, Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014), 10-11, 2014.09. |
| 42. |
Keisuke Yamamoto, Masatoshi Mitsuhara, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima, Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge, APPLIED PHYSICS LETTERS, 10.1063/1.4870510, 104, 13, 132109-1-132109-5, 2014.04. |
| 43. |
DONG WANG, Yuta Nagatomi, Shuta Kojima, Yamamoto Keisuke, Hiroshi Nakashima, Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method, Thin Solid Films, 10.1016/j.tsf.2013.10.065, 557, 288-291, 2014.04. |
| 44. |
Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts, The Electrochemical Society Transactions, 10.1149/05809.0167ecst, 58, 9, 167-178, 2013.10. |
| 45. |
Yamamoto Keisuke, Kojiro Asakawa, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height, The Electrochemical Society Transactions, 10.1149/05809.0053ecst, 58, 9, 53-59, 2013.10. |
| 46. |
Keisuke Yamamoto, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack, APPLIED PHYSICS LETTERS, 10.1063/1.4821546, 103, 12, 122106-1-122106-4, 2013.09. |
| 47. |
Hiroshi Nakashima, Keisuke Yamamoto, Haigui Yang, DONG WANG, Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs, The Electrochemical Society Transactions, 10.1149/05009.0205ecst, 50, 9, 205-216, 2013.03. |
| 48. |
DONG WANG, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation, Journal of Applied Physics, 10.1063/1.4759139, 112, 8, 083707-1-083707-5, 2012.10. |
| 49. |
Takahiro Sada, Keisuke Yamamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima, High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain, Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 737-738, 2012.09. |
| 50. |
Kojiro Asakawa, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back- Gate MOSFET, Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 64-65, 2012.09. |
| 51. |
Syuta Kojima, Keita Sakamoto, Yoshiaki Iwamura, Kana Hirayama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers, Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 12-13, 2012.09. |
| 52. |
Keisuke Yamamoto, Kenji Harada, Haigui Yang, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.51.070208, 51, 7, 070208-1-070208-3, 2012.07. |
| 53. |
Keisuke Yamamoto, Takeshi Yamanaka, Kenji Harada, Takahiro Sada, Keita Sakamoto, Syuta Kojima, Haigui Yang, DONG WANG, Hiroshi Nakashima, Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures, APPLIED PHYSICS EXPRESS, 10.1143/APEX.5.051301, 5, 5, 051301-1-051301-3, 2012.05. |
| 54. |
Haigui Yang, DONG WANG, Hiroshi Nakashima, Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique, Thin Solid Films, 10.1016/j.tsf.2011.10.078, 520, 8, 3283-3287, 2012.02. |
| 55. |
Keisuke Yamamoto, Takeshi Yamanaka, Ryuji Ueno, Kana Hirayama, Haigui Yang, DONG WANG, Hiroshi Nakashima, Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors, Thin Solid Films, 10.1016/j.tsf.2011.10.047, 520, 8, 3382-3386, 2012.02. |
| 56. |
Haigui Yang, DONG WANG, Hiroshi Nakashima, Significant Improvement of SiO2/4H-SiC Interface Properties by Electron Cyclotron Resonance Nitrogen Plasma Irradiation, Journal of The Electrochemical Society, 10.1149/2.003201jes, 159, 1, H1-H4, 2012.01. |
| 57. |
DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, Journal of The Electrochemical Society, 10.1149/2.037112jes, 158, 12, H1221-H1224, 2011.12. |
| 58. |
Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Yoshiaki Iwamura, Haigui Yang, DONG WANG, Hiroshi Nakashima, Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering, SOLID-STATE ELECTRONICS, 10.1016/j.sse.2011.01.030, 60, 1, 122-127, 2011.06. |
| 59. |
Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, DONG WANG, Kana Hirayama, Keisuke Yamamoto, Haigui Yang, Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation, APPLIED PHYSICS LETTERS, 10.1063/1.3601480, 98, 25, 252102-1-252102-3, 2011.06. |
| 60. |
Haigui Yang, Masatoshi Iyota, Shogo Ikeura, DONG WANG, Hiroshi Nakashima, Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing, Solid State Electronics, 10.1016/j.sse.2011.01.031, 60, 1, 128-133, 2011.06. |
| 61. |
Masatoshi Iyota, Keisuke Yamamoto, DONG WANG, Haigui Yang, Hiroshi Nakashima, Ohmic contact formation on n-type Ge by direct deposition of TiN, APPLIED PHYSICS LETTERS, 10.1063/1.3590711, 98, 19, 192108-1-192108-3, 2011.05. |
| 62. |
Keisuke Yamamoto, Ryuji Ueno, Takeshi Yamanaka, Kana Hirayama, Haigui Yang, DONG WANG, Hiroshi Nakashima, High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation, APPLIED PHYSICS EXPRESS, 10.1143/APEX.4.051301, 4, 5, 051301-1-051301-3, 2011.05. |
| 63. |
Kana Hirayama, Ryuji Ueno, Yoshiaki Iwamura, Keisuke Yoshino, DONG WANG, Haigui Yang, Hiroshi Nakashima, Fabrication of Ge Metal-Oxide-Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.50.04DA10, 50, 4, 04DA10-1-04DA10-5, 2011.04. |
| 64. |
Haigui Yang, Masatoshi Iyota, Shogo Ikeura, DONG WANG, Hiroshi Nakashima, Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator, Key Engineering Materials, 10.4028/www.scientific.net/KEM.470.79, 470, 79-84, 2011.02. |
| 65. |
Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima, Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method, Acta Materialia, 10.1016/j.actamat.2011.01.031, 59, 7, 2882-2890, 2011.02. |
| 66. |
DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, The Electrochemical Society Transactions, 10.1149/1.3567723, 34, 1, 1117-1122, 2011.01. |
| 67. |
Haigui Yang, DONG WANG, Hiroshi Nakashima, Hole-Mobility Enhancement in Ultrathin Strained Si0.5Ge0.5-on-Insulator Fabricated by Ge Condensation Technique, Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2010）, 10.1109/ICSICT.2010.5667472, 905-907, 2010.11. |
| 68. |
DONG WANG, Haigui Yang, Hiroshi Nakashima, Defect characterization and control for SiGe-on-insulator (Invited), Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2010）, 10.1109/ICSICT.2010.5667501, 1525-1528, 2010.11. |
| 69. |
Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima, Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy, THIN SOLID FILMS, 10.1016/j.tsf.2010.06.023, 518, 23, 6787-6791, 2010.09. |
| 70. |
Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima, Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.49.090208, 49, 9, 090208-1-090208-3, 2010.09. |
| 71. |
Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima, Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition, Materials Science and Engineering A, doi:10.1016/j.msea.2010.07.004, 527, 24-25, 6633-6637, 2010.09. |
| 72. |
Haigui Yang, Masatoshi Iyota, Shogo Ikeura, DONG WANG, Hiroshi Nakashima, Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing, APPLIED PHYSICS EXPRESS, 10.1143/APEX.3.071302, 3, 7, 071302-1-071302-3, 2010.07. |
| 73. |
Kana Hirayama, Wataru Kira, Keisuke Yoshino, Haigui Yang, DONG WANG, Hiroshi Nakashima, Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.115, 518, 9, 2505-2508, 2010.02. |
| 74. |
DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima, 325 nm-laser-excited micro-photoluminescence for strained Si films, THIN SOLID FILMS, 10.1016/j.tsf.2009.09.124, 518, 9, 2470-2473, 2010.02. |
| 75. |
Haigui Yang, DONG WANG, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura, Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions, THIN SOLID FILMS, 10.1016/j.tsf.2009.09.179, 518, 9, 2342-2345, 2010.02. |
| 76. |
DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima, Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain, Journal of Applied Physics, 10.1063/1.3305463, 107, 3, 033511-1-033511-5, 2010.02. |
| 77. |
Hiroshi Nakashima, DONG WANG, Haigui Yang, Optical and Electrical Characterizations of Defects in SiGe-on-insulator, The Electrochemical Society Transactions, 10.1149/1.3203947, 25, 7, 99-114, 2009.10. |
| 78. |
Haigui Yang, DONG WANG, Hiroshi Nakashima, Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique, APPLIED PHYSICS LETTERS, 10.1063/1.3234373, 95, 12, 122103-1-122103-3, 2009.09. |
| 79. |
DONG WANG, Hiroshi Nakashima, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation, Solid-State Electronics, 10.1016/j.sse.2009.04.021, 53, 8, 841-849, 2009.08. |
| 80. |
Hiroshi Nakashima, DONG WANG, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama, Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO(2)/Si structure, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 10.1088/0268-1242/23/12/125020, 23, 12, 125020-1-125020-6, 2008.12. |
| 81. |
DONG WANG, Hiroshi Nakashima, Masanori Tanaka, Taizoh SADOH, Ｍasanobu Miyao, Jun Morioka, Tokuhide Kitamura, Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence, THIN SOLID FILMS, 10.1016/j.tsf.2008.08.021, 517, 1, 31-33, 2008.11. |
| 82. |
Youhei Sugimoto, Masanori Kajiwara, Keisuke Yamamoto, Yuusaku Suehiro, DONG WANG, Hiroshi Nakashima, Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal, Thin Solid Films, 10.1016/j.tsf.2008.08.058, 517, 1, 204-206, 2008.11. |
| 83. |
Hiroshi Nakashima, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama, DONG WANG, Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO(2)/Si structure, Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2008）, 10.1109/ICSICT.2008.4734660, 780-783, 2008.10. |
| 84. |
DONG WANG, Haigui Yang, Jun Morioka, Tokuhide Kitamura, Hiroshi Nakashima, Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation, Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2008）, 10.1109/ICSICT.2008.4734646, 684-687, 2008.10. |
| 85. |
Haigui Yang, DONG WANG, Hiroshi Nakashima, Hongye Gao, Kana Hirayama, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator, APPLIED PHYSICS LETTERS, 10.1063/1.2972114, 93, 7, 072104-1-072104-3, 2008.08. |
| 86. |
DONG WANG, Hiroshi Nakashima, Jun Morioka, Tokuhide Kitamura, Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition, APPLIED PHYSICS LETTERS, 10.1063/1.2825271, 91, 24, 241918-1-241918-3, 2007.12. |
| 87. |
Youhei Sugimoto, Nasanari Kajiwara, Keisuke Yamamoto, Yuusaku Suehiro, DONG WANG, Hiroshi Nakashima, Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing, APPLIED PHYSICS LETTERS, 10.1063/1.2783472, 91, 11, 112105-1-112105-3, 2007.09. |
| 88. |
Youhei Sugimoto, Hideto Adachi, Keisuke Yamamoto, DONG WANG, Hideharu Nakashima, Hiroshi Nakashima, Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 10.1016/j.mssp.2006.10.020, 9, 6, 1031-1036, 2006.12. |
| 89. |
DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima, Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 10.1016/j.nimb.2006.10.009, 253, 1-2, 31-36, 2006.12. |
| 90. |
DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Hiroshi Nakashima, Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Inslator Virtual Substrate Fabrication, Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2006）, 10.1109/ICSICT.2006.306678, 2193-2195, 2006.10. |
| 91. |
DONG WANG, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, APPLIED PHYSICS LETTERS, 10.1063/1.2240111, 89, 4, 041916-1-041916-3, 2006.07. |
| 92. |
DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Structural and electrical evaluation for strained Si/SiGe on insulator, THIN SOLID FILMS, 10.1016/j.tsf.2005.07.338, 508, 1-2, 107-111, 2006.06. |
| 93. |
DONG WANG, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima, Photoluminescence characterization of strained Si-SiGe-on-insulator wafers, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.45.3012, 45, 4B, 3012-3016, 2006.04. |
| 94. |
Takeshi Terakawa, DONG WANG, Hiroshi Nakashima, Fe gettering by p+ layer in bifacial Si solar cell fabrication, Physica B, 10.1016/j.physb.2005.12.061, 376-377, 231-235, 2006.04. |
| 95. |
DONG WANG, Asami Ueda, Hideki Takada, Hiroshi Nakashima, Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements, PHYSICA B-CONDENSED MATTER, 10.1016/j.physb.2005.12.106, 376-377, 411-415, 2006.04. |
| 96. |
Takeshi Teraoka, DONG WANG, Hiroshi Nakashima, Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.45.2643, 45, 4A, 2643-2647, 2006.04. |
| 97. |
DONG WANG, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae, Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions, APPLIED PHYSICS LETTERS, 10.1063/1.2152109, 87, 25, 251928-1-251928-3, 2005.12. |
| 98. |
Takeshi Terakawa, DONG WANG, Hiroshi Nakashima, Fe Gettering for High-Efficiency Solar Cell Fabrication, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.44.4060, 44, 6A, 4060-4061, 2005.06. |
| 99. |
Junli Wang, Liwei Zhao, Nam Hoai Luu, DONG WANG, Hiroshi Nakashima, Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering, APPLIED PHYSICS A, 10.1007/s00339-003-2483-z, 80, 8, 1781-1787, 2005.05. |
| 100. |
DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.44.2390, 44, 4B, 2390-2394, 2005.04. |
| 101. |
DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements, APPLIED PHYSICS LETTERS, 10.1063/1.1891303, 86, 12, 122111-1-122111-3, 2005.03. |
| 102. |
DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method, Proceeding of 7th International Conference on Solid-State and Integrated-Circuit Technology（ICSICT2004）, 10.1109/ICSICT.2004.1435268, 2148-2150, 2004.10. |
| 103. |
Hiroshi Nakashima, DONG WANG, Takashi Noguchi, Kousuke Itani, Junli Wang, Liwei Zhao, Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.43.2402, 43, 5A, 2402-2408, 2004.05. |
| 104. |
Liwei Zhao, Nam Hoai Luu, DONG WANG, Youhei Sugimoto, Ken-ichi Ikeda, Hiroshi Nakashima, Low-temperature growth of thin silicon nitride film by electron cyclotron resonance plasma irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.43.L47, 43, 1A-B, L47-L49, 2004.01. |
| 105. |
Junli Wang, Liwei Zhao, Nam Hoai Luu, Kazuya Makiyama, DONG WANG, Hiroshi Nakashima, Growth kinetics and electrical properties of ultrathin Si oxide film fabricated using Krypton-diluted oxygen plasma excited by electron cyclotron resonance, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.42.6496, 42, 10, 6496-6501, 2003.10. |
| 106. |
Junli Wang, Taishi Saitou, Youhei Sugimoto, DONG WANG, Liwei Zhao, Hiroshi Nakashima, Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.42.L511, 42, 5B, L511-L513, 2003.03. |
| 107. |
Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, DONG WANG, Jin-Yue Gao, Electromagnetically induced one-photon and two-photon transparency in rubidium atoms, OPTICS COMMUNICATIONS, 10.1016/S0030-4018(02)02306-4, 216, 1-3, 157-164, 2003.02. |
| 108. |
DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Control of two-photon absorption by using electromagnetic field in sodium and rubidium vapors, Proceedings of the Society of Photographic Instrumentation Engineers, 10.1117/12.448258, 4458, 278-283, 2001.11. |
| 109. |
DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Electromagnetically induced two-photon transparency in rubidium atoms, EUROPHYSICS LETTERS, 10.1209/epl/i2001-00267-5, 54, 4, 456-460, 2001.05. |
| 110. |
DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Electromagnetically induced two-photon transparency in a four level system of rubidium atom, Proceedings of the Society of Photographic Instrumentation Engineers, 10.1117/12.425120, 4397, 140-145, 2001.04. |
| 111. |
Jin-Yue Gao, Su-Hui Yang, DONG WANG, Xiu-Zhen Guo, Kai-Xin Chen, Yun Jiang, Bin Zhao, Electromagnetically induced inhibition of two-photon absorption in sodium vapor, PHYSICAL REVIEW A, 10.1103/PhysRevA.61.023401, 61, 2, 023401-1-023401-3, 2000.02. |
