| 1. |
Gufei Zhang, Seigo Murakami, Ryo Takigawa, Room-temperature Bonding of Indium Phosphide Wafers and Their Atomic structure at the Bond Interface, ACS Applied Electronic Materials, 2023.10. |
| 2. |
Ryo Takigawa, Shunsuke Kai, Haruichi Kanaya, Thin Circularly Polarized Slot Array Antenna for High-Band UWB Applications, Electronics, https://doi.org/10.3390/electronics11071070, 11, 7, 1-12, 2022.03. |
| 3. |
Kaname Watanabe, Ryo Takigawa, Bonding of LiNbO3 and Si wafers at room temperature using Si nanolayers, Japanese Journal of Applied Physics, 60, SCCL14-1-SCCL14-5, 2021.04. |
| 4. |
Nogami Hirofumi, Ohgata Satoru, Saito Aya, Ban Kazuyuki, Akiyama Terukazu, Hiejima Takumi, Takigawa Ryo, Hosoya Tadatsugu, Non-invasive heart rate measurement system using laser Doppler blood flowmetry for husbandry training of masked palm civet (parguma larvata), Japanese Journal of Applied Physics, 60, SCCL13-1-SCCL13-6. |
| 5. |
Jun Utsumi, Ryo Takigawa, Surface activated bonding of aluminum oxide films at room temperature, Scripta Materialia, 191, 215-218, 2021.01, We have investigated the surface activated bonding (SAB) of deposited Al2O3 films by chemical vapor deposition under a short-time activated condition at room temperature. Although the surface energy for bonding of Al2O3 films was very low, that of Al2O3 film/sapphire bonding was approximately 1 J m − 2 and more than 2 J m − 2 for sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer approximately 1 nm thick, observed at the bonding interface of Al2O3/Al2O3, but not in the bonding of Al2O3/sapphire, which suggests that the crystallinity of the Al2O3 film affects the bonding of Al2O3.. |
| 6. |
Ryo Takigawa, Michitaka Yamamoto, Eiji Higurashi, Tanemasa Asano, Haruichi Kanaya, Demonstration of GaN/LiNbO3 hybrid wafer using room-temperature surface activated bonding, ECS Journal of Solid State Science and Technology, 9, 3, 045005, 2020.04. |
| 7. |
Ryo Takigawa, Jun Utsumi, Direct bonding of LiNbO3 and SiC wafers at room temperature, Scripta Materialia, 174, 58-61, 2020.01. |
| 8. |
Ryo Takigawa, Keigo Kamimura, Keiichi Nakamoto, Toru Tomimatsu, and Tanemasa Asano, Fabrication of bonded LNOI waveguide structure on Si substrate using ultra-precision cutting, Japanese Journal of Applied Physics, 59, SBBD03-1-SBBD03-4, 2020.01. |
| 9. |
Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Ultrathin adhesivelayer between LiNbO3 and SiO2 for bonded LNOI waveguide, Japanese Journal of Applied Physics, 58, SJJE06-1-SJJE06-5, 2019.08. |
| 10. |
Ryo Takigawa, Toru Tomimatsu, Eiji Higurashi, and Tanamasa Asano, Residual stress in Lithium Niobate film layer of LNOI/Si hybrid wafer fabricated using low-temperature bonding method, MICROMACHINES, 10, 2, 136, 2019.02. |
| 11. |
Ryo Takigawa and Tanemasa Asano, Thin-film lithium niobate-on-insulator waveguides fabricated on silicon wafer by room-temperature bonding method with silicon nanoadhesive layer, Optics Express, 26, 19, 24413-24421, 2018.09, Lithium niobate-on-insulator (LNOI) waveguides fabricated on a silicon wafer using a room-temperature bonding method have potential application as Si-based high-density photonic integrated circuits. A surface-activated bonding method using a Si nanoadhesive layer was found to produce a strong bond between LN and SiO2/Si at room temperature, which is sufficient to withstand both the wafer-thinning (LN thickness |
| 12. |
Hirofumi Nogami, Wataru Iwasaki, Nobutomo Morita and Ryo Takigawa, Relationship between AC/DC Ratio and Light-blocking Structure for Reflective Photoplethysmographic Sensor, Sensors and Materials, 30, 12, 3021, 2018.12. |
| 13. |
Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Surface Activated Bonding of LiNbO3 and GaN at Room Temperature, ECS transactions, 86, 5, 207-213, 2018.07. |
| 14. |
Ryo Takigawa, Keiichiro Iwanabe, Akihiro Ikeda, Takayuki Takao, and Tanemasa Asano, Room-temperature Hermetic Packaging Using Ultrasonic Cu–Cu Bonding with Compliant Rim, Sensors and Materials, 30, 12, 2897, 2018.12. |
| 15. |
Toru Tomimatsu, and Ryo Takigawa, Asymmetric Line Shape of Near-field Luminescence Spectrum Induced by Stress in Al2O3, Sensors and Materials, 30, 12, 2881, 2018.12. |
| 16. |
Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method, Japanese Journal of Applied Physics, 57, 2018.05. |
| 17. |
Toru Tomimatsu, Ryo Takigawa, Correlation between the local stress and the grain misorientation in the polycrystalline Al2O3 measured by near-field luminescence spectroscopy, Japanese Journal of Applied Physics, 57, 2018.05. |
| 18. |
Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi, Room-temperature transfer bonding of lithium niobate thin film on micromachined silicon substrate with Au microbumps, Sensors & Actuators: A. Physical, 264, 1, 274-281, 2017.08. |
| 19. |
Ryo Takigawa, Hiroki Kawano, Hiroshi Ikenoue, Tanemasa Asano, Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 088002-1-088002-3, 2017.07. |
| 20. |
Ryo Takigawa, Eiji Higurashi, Tetsuya Kawanishi, Tanemasa Asano, Demonstration of ultraprecision ductile-mode cutting for lithium niobate microring waveguides, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.55.110304, 55, 11, 2016.11. |
| 21. |
Hiroki Kawano, Ryo Takigawa, Hiroshi Ikenoue, Tanemasa Asano, Bonding of lithium niobate to silicon in ambient air using laser irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.55.08RB09, 55, 8, 2016.08. |
| 22. |
Tatsuya Baba, Yaerim Lee, Ai Ueno, Reo Kometani, Etsuo Maeda, Ryo Takigawa, Triple-walled gold surfaces with small-gaps for nonresonance surface enhanced Raman scattering of rhodamine 6G molecules, Journal of Vacuum Science & Technology B, 34, 011802-1-011802-4, 2016.01. |
| 23. |
Ryo Takigawa, Kohei Nitta, Akihiro Ikeda, Mitsuaki Kumazawa, Toshiharu Hirai, Michio Komatsu, Tanemasa Asano, High-speed via hole filling using electrophoresis of Ag nanoparticles, IEEE ３D-IC, TS5.4.1-TS5.4.4, 2015.09. |
| 24. |
Ryo Takigawa, Eiji HIgurashi, Tetsuya Kawanishi, Tanemasa Asano, Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method, Optics Express, 10.1364/OE.22.027733, 22, 22, 27733-27738, 2014.11. |
| 25. |
Linghan, Li, Takigawa Ryo, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Bingyao Liu, Yoshiaki Nakano, Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib, LASER PHYSICS LETTERS, 11, 11, 115807, 2014.11. |
| 26. |
Ryo Takigawa, Keiichiro Iwanabe, Takanori Shuto, Takayuki Takao, Tanemasa Asano, Room-temperature hermetic sealing using ultrasonic bonding with Au compliant rim
, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 06JM05, 2014.05. |
| 27. |
Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Tsujimura Noriyuki, Hisayuki Kato, Takeshi Kobayashi, Ryutaro Maeda, Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.06JL02, 53, 6, 2014.06. |
| 28. |
Yuichi Kurashima, Atsuhiko Maeda, Takigawa Ryo, Hideki Takagi, Room temperature bonding of metal films using flattening by thermal imprint process, Microelectronic Engineering, 112, 52-56, 2013.12. |
| 29. |
Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi, Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates, OPTICS EXPRESS, 10.1364/OE.19.015739, 19, 17, 15739-15749, 2011.08. |
| 30. |
Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi, Passive Alignment and Mounting of LiNbO3 Waveguide Chips on Si Substrates by Low-Temperature Solid-State Bonding of Au, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 10.1109/JSTQE.2010.2093871, 17, 3, 652-658, 2011.05. |
| 31. |
Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Renshi Sawada, Room-Temperature Bonding of Vertical-Cavity Surface-Emitting Laser Chips on Si Substrates Using Au Microbumps in Ambient Air, APPLIED PHYSICS EXPRESS, 10.1143/APEX.1.112201, 1, 11, 2008.11. |
| 32. |
Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi, Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air, IEICE TRANSACTIONS ON ELECTRONICS, 10.1093/ietele/e90-c.1.145, E90C, 1, 145-146, 2007.01. |
