| 1. |
Wataru Saito, and Shin-ichi Nishizawa, Overvoltage Failure Process of Cascode GaN FETs, 14th International Conference on Nitride Semiconductors (ICNS), 2023.11. |
| 2. |
T. Takamori, K. Wada, W. Saito, S. Nishizawa, Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker, 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2023.10. |
| 3. |
T. Tsukamoto, S. Nishizawa, W. Saito, A simple sensor device for power cycle degradation sensing, 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2023.10. |
| 4. |
T. Mamee, Z. Lou, K. Hata, M. Takamiya, S. Nishizawa, W. Saito, Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module, 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2023.10. |
| 5. |
Yuri Fujimoto, Shin-ichi Nishizawa, Wataru Saito, Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 6. |
Hiroaki Kato, Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Shin-ichi Nishizawa, Wataru Saito, Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 7. |
Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Wataru Saito, Shin-ichi Nishizawa, Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 8. |
Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, Wataru Saito, Toshiro Hiramoto, Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 9. |
Wataru Saito, Avalanche breakdown behavior and robustness of SiC and GaN transistors, IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2023, 2023.08. |
| 10. |
Wataru Saito, Shin-Ichi Nishizawa, Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress, The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023.05. |
| 11. |
Taro Takamori; Keiji Wada; Wataru Saito; Shin-Ichi Nishizawa, Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes, 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), 2023.05. |
| 12. |
Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, Wataru Saito, and Shin-ichi Nishizawa, The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process, 7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023, 2023.03. |
| 13. |
Toshiaki Inuma; Katsuhiro Hata; Toru Sai; Wataru Saito; Makoto Takamiya, Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules, IEEE 7th Southern Power Electronics Conference (SPEC), 2022.12. |
| 14. |
Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; Wataru Saito; Shin-Ichi Nishizawa, Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 2022.10. |
| 15. |
Norman Boettcher; Taro Takamori; Keiji Wada; Wataru Saito; Shin-ichi Nishizawa; Tobias Erlbacher, Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 2022.09. |
| 16. |
Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa, Application of A Parallel-Connected SiC MOSFETs to Solid-State Circuit Breakers Based on UIS Tests, 33rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2022.09. |
| 17. |
Wataru Saito, Progress of Low-Voltage Si-Power MOSFETs, 2022 International Conference on Solid State Devices and Materials (SSDM), 2022.09. |
| 18. |
Wataru Saito, Zaiqi Lou and Shin-ichi Nishizawa, Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition, IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe), 2022.09. |
| 19. |
Kohei Horii, Katsuhiro Hata, Ruizhi Wang, Wataru Saito, and Makoto Takamiya, Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs, 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.05. |
| 20. |
Norman Boettcher, Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa and Tobias Erlbacher, Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device, 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.05. |
| 21. |
Wataru Saito and Shin-ichi Nishizawa, Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs, 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.05. |
| 22. |
Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang, Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses, International Reliability Physics Symposium 2022, 2022.03. |
| 23. |
Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt Smith, Wataru Saito, Yuhao Zhang, GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery, International Reliability Physics Symposium 2022, 2022.03. |
| 24. |
Taro Takamori, Keiji Wada, Wataru Saito, Shin-Ichi Nishizawa, Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode As Avalanche Voltage Clamping, The Applied Power Electronics Conference (APEC) 2022, 2022.03. |
| 25. |
M. Sagara, K. Wada, S.-I. Nishizawa, W. Saito, Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection, 32nd EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF), 2021.10. |
| 26. |
Z. Lou, K. Wada, W. Saito, S.-I. Nishizawa, Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers, 32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2021.10. |
| 27. |
Sankara Narayanan Ekkanath Madathil, Peng Luo, Wataru Saito, and Shin-ichi Nishizawa, Performance Comparison of Scaled IGBTs and CIGBTs, 2021 International Conference on Solid State Devices and Materials, 2021.09. |
| 28. |
Wataru Saito, Shin-ichi Nishizawa, Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology, 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.06. |
| 29. |
T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto, 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, 2020.12, 3.3kV級両面ゲートIGBTを表面ウェハ工程と裏面ウェハ工程を組み合わせて、試作した。裏面MOSゲートにより電子の排出とホール注入の制御を行うことで、ターオフ損失を60%以上低減できることを実証した。. |
| 30. |
Taro Takamori, Keiji Wada, Wataru Saito and Shin-ichi Nishizawa, Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode, 31st EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF), 2020.10. |
| 31. |
Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa, Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test, 2020 International Conference on Solid State Devices and Materials (SSDM), 2020.09. |
| 32. |
Taichi Ogawa, Wataru Saito, Shin-ichi Nishizawa, A Design Direction of Low-Voltage Field Plate Power MOSFETs for FOM Limit, 2020 International Conference on Solid State Devices and Materials (SSDM), 2020.09. |
| 33. |
Ryohei Sato; Koichi Kakimoto; Wataru Saito; Shin-ichi Nishizawa, Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization, 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.09. |
| 34. |
Peng Luo; Sankara Narayanan Ekkanath Madathil; Shin-ichi Nishizawa; Wataru Saito, Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation, 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.09. |
| 35. |
Wataru Saito; Shin-ichi Nishizawa, High Switching Controllability Trench Gate Design in Si-IGBTs, 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.09. |
| 36. |
Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ichi Nishizawa, Wataru Saito
, High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020.03. |
| 37. |
Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ichi Nishizawa, and Wataru Saito, Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation, International Electron Devices Meeting (IEDM) 2019, 2019.12, 高効率な電力変換を実現するパワーデバイスとして多く用いられているIGBTにおいて、更なる低損失化と大電流密度化を実現する上で、ターンオフスイッチング動作時のダイナミックアバランシェ現象は大きな障害となっている。従来のIGBTにおいて、ダイナミックアバランシェを発生させている原因が電界集中とホール排出不足であることを明らかにすると共に、これらを解消させる構造として、Clustered IGBTが有効であることを理論と実験の両面から証明した。. |
| 38. |
Kaori Fuse, Keiko Kawamura, Wataru Saito and Tomoko Matsudai , Analysis of oscillatory phenomena in cathode designs for 1200 V diodes using an LCR circuit model in reverse recovery , International Conference on Solid State Devices and Materials (SSDM), 2019.09. |
| 39. |
Takeshi Mizoguchi, Yoko Sakiyama, Naoto Tsukamoto and Wataru Saito, High accurate IGBT/IEGT compact modeling for prediction of power efficiency and EMI noise, 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.05. |
| 40. |
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto, 3300V scaled IGBTs driven by 5V gate voltage, 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.05. |
| 41. |
Wataru Saito, Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET, 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018.08. |
