| 1. |
Akira Kusaba, Tetsuji Kuboyama, Yoshihiro Kangawa, Determination of Local Electron Counting Rule Satisfaction by SAT Solver, 9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9), 2024.06. |
| 2. |
Reo Shimauchi, Yoshihiro Kangawa, Akira Kusaba, Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces, 10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024), 2024.04. |
| 3. |
Keitaro Tateyama, Yoshihiro Kangawa, Akira Kusaba, Takahiro Kawamura, Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces, 10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024), 2024.04. |
| 4. |
Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa, Ab initio thermodynamic study of the metallic surface wetting layer during MBE (In)GaN growth and its consequences for dopants incorporation, 14th International Conference on Nitride Semiconductors (ICNS-14), 2023.11. |
| 5. |
Akira Kusaba, Bayesian optimization and Ising model in DFT calculations of surface reconstruction, 24th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-24), 2023.11. |
| 6. |
Yuya Nagashima, Hirotaka Watanabe, Syugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi, Theoretical analysis of TMI degradation pathway in InN MOVPE growth, 14th International Conference on Nitride Semiconductors (ICNS-14), 2023.11. |
| 7. |
Akira Kusaba, Data Assimilation in Semiconductor Crystal Growth: Chemical Reaction Network Modeling, Global Plasma Forum in Aomori, 2023.10. |
| 8. |
Shun Yamakawa, Hirofumi Akamatsu, Akira Kusaba, Yoshihiro Kangawa, Theoretical exploration of widegap materials with the corundum structure for heteroepitaxy on α-Ga2O3, 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20), 2023.08. |
| 9. |
Karol Kawka, Paweł Kempisty, Stanisław Krukowski, Michał Boćkowski, David Bowler, Akira Kusaba, Ising model-based analysis of the GaN(0001) surface reconstructed structures sampled from Bayesian optimization, 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20), 2023.07. |
| 10. |
Akira Kusaba, Zheng Ye, Shugo Nitta, Kenji Shiraishi, Tetsuji Kuboyama, Yoshihiro Kangawa, Tuning of Ab Initio Reaction Rate in GaN Metalorganic Vapor Phase Epitaxy by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data, International Workshop on Nitride Semiconductors 2022 (IWN 2022), 2022.10. |
| 11. |
Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama, Data-driven approach to predict growth conditions of compound semiconductor nanowires for optical devices by molecular beam epitaxy, IUMRS-ICYRAM 2022, 2022.08. |
| 12. |
Akira Kusaba, Application of Machine Learning Methods to More Quantitative GaN MOVPE Modeling, 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022), 2022.01. |
| 13. |
Yoshihiro Kangawa, Akira Kusaba, Pawel Kempisty, Theoretical approach to unintentional oxygen doping during MOVPE of GaN:Mg and AlN:Mg, International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021), 2021.11. |
| 14. |
Akira Kusaba, Yoshihiro Kangawa, Zheng Ye, Shugo Nitta, Kenji Shiraishi, Tuning of Reaction Rate Constants for Trimethylgallium Decomposition by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data, International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021), 2021.11. |
| 15. |
Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa, First-principles study of Mg and O co-doping mechanism in the growth surface during GaN(0001) and AlN(0001) metalorganic vapor phase epitaxy, 32nd IUPAP Conference on Computational Physics (CCP 2021), 2021.08. |
| 16. |
Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Makoto Sasaki, Shigeru Inagaki, Prediction of plasma turbulence using Hankel and sparsity-promoting dynamic mode decomposition, 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2021), 2021.03. |
| 17. |
Pawel Kempisty, Konrad Sakowski, Akira Kusaba, Yoshihiro Kangawa, Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors, 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 2021.03. |
| 18. |
Daichi Yosho, Yuriko Matsuo, Pawel Kempisty, Akira Kusaba, Yoshihiro Kangawa, Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability, International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021), 2021.01. |
| 19. |
Akira Kusaba, Yoshihiro Kangawa, More quantitative prediction of III-nitride growth: theoretical and data-driven approaches, International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021), 2021.01. |
| 20. |
Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi, Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth, International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021), 2021.01. |
| 21. |
Akira Kusaba, Kilho Shin, Dave Shepard, Tetsuji Kuboyama, Predictive Nonlinear Modeling by Koopman Mode Decomposition, 15th International Workshop on Spatial and Spatiotemporal Data Mining (SSTDM '20) In Cooperation with IEEE ICDM 2020, 2020.11. |
| 22. |
Akira Kusaba, Takako Hashimoto, Kilho Shin, David Shepard, Tetsuji Kuboyama, Unsupervised Clustering based on Feature-value / Instance Transposition Selection, IEEE Region 10 Conference 2020 (TENCON 2020), 2020.11. |
| 23. |
Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Shigeru Inagaki, Long-Time Dynamic Mode Decomposition of Plasma Turbulence, 29th International Toki Conference on Plasma and Fusion Research (ITC-29), 2020.10. |
| 24. |
Takako Hashimoto, Akira Kusaba, Dave Shepard, Tetsuji Kuboyama, Kilho Shin, Takeaki Uno, Twitter Topic Progress Visualization using Micro-Clustering, 9th International Conference on Pattern Recognition Applications and Methods (ICPRAM 2020), 2020.02. |
| 25. |
Souma Sakakibara, Akira Kusaba, Masaaki Araidai, Naoya Okamoto, Katsunori Yoshimatsu, H Watanabe, Shugo Nitta, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, GaN Crystal Growth Multi Physics Simulation With Gas Phase Chemical Reaction, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), 2019.11. |
| 26. |
Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Zheng Ye, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi, Study of the Origins of Carbon Impurities on Gallium Nitride MOVPE from a Gas Phase Reaction Perspective, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), 2019.11. |
| 27. |
Takashi Nakano, Yosuke Harashima, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, The Electronic State Behavior of the Mg-Segregated Dislocation in GaN, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019), 2019.11. |
| 28. |
Takashi Nakano, Kenta Chokawa, Yosuke Harashima, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, Theoretical Study about the Leakage Current due to the Dislocation of Mg Segregation in GaN, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), 2019.11. |
| 29. |
Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Zheng Ye, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi, Theoretical Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective ~ Incorporation of Ga and C Related Molecules ~, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019), 2019.11. |
| 30. |
Akira Kusaba, Tetsuji Kuboyama, Takako Hashimoto, Time Series Electricity Consumption Analysis using Non-negative Matrix Factorization, 10th IEEE International Conference on Awareness Science and Technology (iCAST 2019), 2019.10. |
| 31. |
Takashi Nakano, Kenta Chokawa, Yosuke Harashima, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN, International Conference on Solid State Devices and Materials 2019 (SSDM 2019), 2019.09. |
| 32. |
Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Shigeyoshi Usami, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, Electronic Properties of GaN Nanopipe Threading Dislocation with M-Plane Surface, 13th International Conference on Nitride Semiconductors (ICNS-13), 2019.07. |
| 33. |
Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Sheng Yo, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi, STUDY OF THE ORIGINS OF CARBON IMPURITIES ON GAN MOVPE FROM A GAS PHASE REACTION PERSPECTIVE, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 2019.07. |
| 34. |
Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, Electronic structure analysis of core structures of threading dislocations in GaN, Compound Semiconductor Week 2019 (CSW 2019), 2019.05. |
| 35. |
Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, Yoshihiro Kangawa, Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer, International Workshop on Nitride Semiconductors 2018 (IWN 2018), 2018.11. |
| 36. |
Subaru Komura, Kento Kawakami, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Multiphysics simulation of GaN MOVPE: Flow influence on GaN growth-orientation, International Workshop on Nitride Semiconductors 2018 (IWN 2018), 2018.11. |
| 37. |
Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa, Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000-1): the growth orientation dependence of the C impurity concentration, International Workshop on Nitride Semiconductors 2018 (IWN 2018), 2018.11. |
| 38. |
Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa, Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition, International Workshop on Nitride Semiconductors 2018 (IWN 2018), 2018.11. |
| 39. |
Subaru Komura, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Flow influence on GaN MOVPE growth-orientation, 9th International Workshop on Modeling in Crystal Growth (IWMCG-9), 2018.10. |
| 40. |
Kento Kawakami, Subaru Komura, Akira Kusaba, Katsunori Yoshimatu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Methodology for Multiphysics Flow Simulation in GaN MOVPE using Thermodynamic Analysis and First Principles Calculations for GaN Deposition, 9th International Workshop on Modeling in Crystal Growth (IWMCG-9), 2018.10. |
| 41. |
Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa, Monte Carlo simulation of carbon incorporation in GaN MOVPE, 7th International Symposium on Growth of III-Nitrides (ISGN-7), 2018.08. |
| 42. |
Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Pawel Kempisty, Yoshihiro Kangawa, Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System, 7th International Symposium on Growth of III-Nitrides (ISGN-7), 2018.08. |
| 43. |
Yuya Inatomi, Akira Kusaba, Yoshihiro Kangawa, Kazunobu Kojima, Shigefusa Chichibu, Formation Mechanism of Singular Structure in AlInN Layer Grown on M-GaN Substrate by MOVPE, 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '18), 2018.04. |
| 44. |
Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi, Driving force for m-plane GaN MOVPE: a new thermodynamic modeling, 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2018), 2018.03. |
| 45. |
Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics, International Workshop on UV Materials and Devices 2017 (IWUMD 2017), 2017.11. |
| 46. |
Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto, Steepest-entropy-ascent quantum thermodynamic behavior of ammonia chemical adsorption on GaN(0001) surfaces under MOVPE, E-MRS 2017 Fall Meeting, 2017.09. |
| 47. |
Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State, International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017), 2017.09. |
| 48. |
Akira Kusaba, Yoshihiro Kangawa, Michael R. von Spakovsky, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE, International Workshop on Ntride Semiconductors 2016 (IWN 2016), 2016.10. |
| 49. |
Takuya Tamura, Akira Kusaba, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Koichi Kakimoto, Akinori Koukitu, Contribution of lattice constraint to indium incorporation into coherently grown InGaN, 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 2016.08. |
| 50. |
Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Hiroshi Amano, Akinori Koukitu, Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction, 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 2016.08. |
| 51. |
Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto, Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE, 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015.11. |
| 52. |
Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Koishi Kakimoto, Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach, 5th European Conference on Crystal Growth (ECCG-5), 2015.09. |
| 53. |
Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata, Wettability-Driven Water Condensation at the Micron and Submicron Scale, 15th International Heat Transfer Conference (IHTC-15), 2014.08. |
| 54. |
Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata, Growth and Coalescence of Condensed Microdroplets on Graphite Surface, 5th International Conference on Heat Transfer and Fluid Flow in Microscale (HTFFM-V), 2014.04. |
| 55. |
Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata, Microscopic Mechanism of Water Condensation on HOPG, International Symposium on Innovative Materials for Processes in Energy Systems 2013 (IMPRES 2013), 2013.09. |
