九州大学 研究者情報
論文一覧
多喜川 良(たきかわ りよう) データ更新日:2023.12.21

准教授 /  システム情報科学研究院 情報エレクトロニクス部門 集積電子システム


原著論文
1. Gufei Zhang, Seigo Murakami, Ryo Takigawa, Room-temperature Bonding of Indium Phosphide Wafers and Their Atomic structure at the Bond Interface, ACS Applied Electronic Materials, 2023.10.
2. Kaname Watanabe, Ryo Takigawa, Fabrication of heterogeneous LNOI photonics wafers through room temperature wafer bonding using activated Si atomic layer of LiNbO3, glass, and sapphire, Applied Surface Science, https://doi.org/10.1016/j.apsusc.2023.156666, 620, p.156666, 2023.06.
3. 渡辺要、山口祐也、菅野敦史、多喜川良, 常温ウエハ接合によりSi上に集積された低駆動電圧型LNOI光変調器, 電気学会論文誌E, 143, 7, 202-203, 2023.07.
4. Takumi Hiejima, Hirofumi Nogami, Aya Saito, Kazuyuki Ban, D.S.V. Bandara, Ryo TAKIGAWA and Jumpei Arata, Non-wearable pulse rate measurement system using laser Doppler flowmetry with algorithm to eliminate body motion artifacts for masked palm civet (Parguma larvata) during husbandry training, Japanese Journal Applied Physics, 62, SG1047, Accepted, 2023.04.
5. Ryo Takakura, Seigo Murakami, Ryo Takigawa, Effect of Ar fast atom beam irradiation on alpha-Al2O3 for surface activated room temperature bonding, Japanese Journal of Applied Physics, 62, SG1046, 2023.04.
6. Seigo Murakami, Kaname Watanabe, Ryo Takigawa, Investigation of interface between LiNbO3 and Si fabricated via room-temperature bonding method using activated Si nano layer, Japanese Journal of Applied Physics, 10.35848/1347-4065/acc2cb, 62, p.SG1041, 2023.03.
7. Junsha Wang, Ryo Takigawa, Tadatomo Suga, Surface activated bonding of ALD Al2O3 films, Japanese Journal of Applied Physics, 10.35848/1347-4065/acb656, 62, p.SC1081, 2023.02.
8. Ryo Takakura, Seigo Murakami, Kaname Watanabe, Ryo Takigawa, Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition, Scientific Reports, https://doi.org/10.1038/s41598-023-30376-7, 13, 1, p.3581, 2023.03.
9. Y Tahara, F Sassa, R Takigawa, Y Kurihara, Development of a microfluidic-based taste sensor using lipid polymer membrane, Japanese Journal of Applied Physics, 62, p.SG1014, 2023.01.
10. Ryo Takigawa, Shunsuke Kai, Haruichi Kanaya, Thin Circularly Polarized Slot Array Antenna for High-Band UWB Applications, Electronics, https://doi.org/10.3390/electronics11071070, 11, 7, 1-12, 2022.03.
11. Takashi Matsumae, Ryo Takigawa, Yuichi Kurashima, Hideki Takagi, Eiji Higurashi, Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions, Scientific Reports, https://doi.org/10.1038/s41598-021-90634-4, 11, 1-7, 2021.05.
12. Kaname Watanabe, Ryo Takigawa, Bonding of LiNbO3 and Si wafers at room temperature using Si nanolayers, Japanese Journal of Applied Physics, 60, SCCL14-1-SCCL14-5, 2021.04.
13. Nogami Hirofumi, Ohgata Satoru, Saito Aya, Ban Kazuyuki, Akiyama Terukazu, Hiejima Takumi, Takigawa Ryo, Hosoya Tadatsugu, Non-invasive heart rate measurement system using laser Doppler blood flowmetry for husbandry training of masked palm civet (parguma larvata), Japanese Journal of Applied Physics, 60, SCCL13-1-SCCL13-6.
14. Jun Utsumi, Ryo Takigawa, Surface activated bonding of aluminum oxide films at room temperature, Scripta Materialia, 191, 215-218, 2021.01, We have investigated the surface activated bonding (SAB) of deposited Al2O3 films by chemical vapor deposition under a short-time activated condition at room temperature. Although the surface energy for bonding of Al2O3 films was very low, that of Al2O3 film/sapphire bonding was approximately 1 J m − 2 and more than 2 J m − 2 for sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer approximately 1 nm thick, observed at the bonding interface of Al2O3/Al2O3, but not in the bonding of Al2O3/sapphire, which suggests that the crystallinity of the Al2O3 film affects the bonding of Al2O3..
15. Ryo Takigawa, Michitaka Yamamoto, Eiji Higurashi, Tanemasa Asano, Haruichi Kanaya, Demonstration of GaN/LiNbO3 hybrid wafer using room-temperature surface activated bonding, ECS Journal of Solid State Science and Technology, 9, 3, 045005, 2020.04.
16. Ryo Takigawa, Jun Utsumi, Direct bonding of LiNbO3 and SiC wafers at room temperature, Scripta Materialia, 174, 58-61, 2020.01.
17. Ryo Takigawa, Keigo Kamimura, Keiichi Nakamoto, Toru Tomimatsu, and Tanemasa Asano, Fabrication of bonded LNOI waveguide structure on Si substrate using ultra-precision cutting, Japanese Journal of Applied Physics, 59, SBBD03-1-SBBD03-4, 2020.01.
18. Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Ultrathin adhesivelayer between LiNbO3 and SiO2 for bonded LNOI waveguide, Japanese Journal of Applied Physics, 58, SJJE06-1-SJJE06-5, 2019.08.
19. Ryo Takigawa, Toru Tomimatsu, Eiji Higurashi, and Tanamasa Asano, Residual stress in Lithium Niobate film layer of LNOI/Si hybrid wafer fabricated using low-temperature bonding method, MICROMACHINES, 10, 2, 136, 2019.02.
20. Ryo Takigawa and Tanemasa Asano, Thin-film lithium niobate-on-insulator waveguides fabricated on silicon wafer by room-temperature bonding method with silicon nanoadhesive layer, Optics Express, 26, 19, 24413-24421, 2018.09, Lithium niobate-on-insulator (LNOI) waveguides fabricated on a silicon wafer using a room-temperature bonding method have potential application as Si-based high-density photonic integrated circuits. A surface-activated bonding method using a Si nanoadhesive layer was found to produce a strong bond between LN and SiO2/Si at room temperature, which is sufficient to withstand both the wafer-thinning (LN thickness
21. Hirofumi Nogami, Wataru Iwasaki, Nobutomo Morita and Ryo Takigawa, Relationship between AC/DC Ratio and Light-blocking Structure for Reflective Photoplethysmographic Sensor, Sensors and Materials, 30, 12, 3021, 2018.12.
22. Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Surface Activated Bonding of LiNbO3 and GaN at Room Temperature, ECS transactions, 86, 5, 207-213, 2018.07.
23. Ryo Takigawa, Keiichiro Iwanabe, Akihiro Ikeda, Takayuki Takao, and Tanemasa Asano, Room-temperature Hermetic Packaging Using Ultrasonic Cu–Cu Bonding with Compliant Rim, Sensors and Materials, 30, 12, 2897, 2018.12.
24. Toru Tomimatsu, and Ryo Takigawa, Asymmetric Line Shape of Near-field Luminescence Spectrum Induced by Stress in Al2O3, Sensors and Materials, 30, 12, 2881, 2018.12.
25. Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method, Japanese Journal of Applied Physics, 57, 2018.05.
26. Toru Tomimatsu, Ryo Takigawa, Correlation between the local stress and the grain misorientation in the polycrystalline Al2O3 measured by near-field luminescence spectroscopy, Japanese Journal of Applied Physics, 57, 2018.05.
27. Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi, Room-temperature transfer bonding of lithium niobate thin film on micromachined silicon substrate with Au microbumps, Sensors & Actuators: A. Physical, 264, 1, 274-281, 2017.08.
28. Ryo Takigawa, Hiroki Kawano, Hiroshi Ikenoue, Tanemasa Asano, Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 56, 088002-1-088002-3, 2017.07.
29. Ryo Takigawa, Eiji Higurashi, Tetsuya Kawanishi, Tanemasa Asano, Demonstration of ultraprecision ductile-mode cutting for lithium niobate microring waveguides, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.55.110304, 55, 11, 2016.11.
30. Hiroki Kawano, Ryo Takigawa, Hiroshi Ikenoue, Tanemasa Asano, Bonding of lithium niobate to silicon in ambient air using laser irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.55.08RB09, 55, 8, 2016.08.
31. Tatsuya Baba, Yaerim Lee, Ai Ueno, Reo Kometani, Etsuo Maeda, Ryo Takigawa, Triple-walled gold surfaces with small-gaps for nonresonance surface enhanced Raman scattering of rhodamine 6G molecules, Journal of Vacuum Science & Technology B, 34, 011802-1-011802-4, 2016.01.
32. Ryo Takigawa, Kohei Nitta, Akihiro Ikeda, Mitsuaki Kumazawa, Toshiharu Hirai, Michio Komatsu, Tanemasa Asano, High-speed via hole filling using electrophoresis of Ag nanoparticles, IEEE 3D-IC, TS5.4.1-TS5.4.4, 2015.09.
33. 多喜川 良, 強誘電体材料の切削加工によるリッジ型光導波路, MICROOPTICS NEWS, 33, 2, 31-36, 2015.05.
34. Ryo Takigawa, Eiji HIgurashi, Tetsuya Kawanishi, Tanemasa Asano, Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method, Optics Express, 10.1364/OE.22.027733, 22, 22, 27733-27738, 2014.11.
35. Linghan, Li, Takigawa Ryo, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Bingyao Liu, Yoshiaki Nakano, Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib, LASER PHYSICS LETTERS, 11, 11, 115807, 2014.11.
36. Ryo Takigawa, Keiichiro Iwanabe, Takanori Shuto, Takayuki Takao, Tanemasa Asano, Room-temperature hermetic sealing using ultrasonic bonding with Au compliant rim
, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 06JM05, 2014.05.
37. Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Tsujimura Noriyuki, Hisayuki Kato, Takeshi Kobayashi, Ryutaro Maeda, Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.06JL02, 53, 6, 2014.06.
38. Yuichi Kurashima, Atsuhiko Maeda, Takigawa Ryo, Hideki Takagi, Room temperature bonding of metal films using flattening by thermal imprint process, Microelectronic Engineering, 112, 52-56, 2013.12.
39. Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi, Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates, OPTICS EXPRESS, 10.1364/OE.19.015739, 19, 17, 15739-15749, 2011.08.
40. Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi, Passive Alignment and Mounting of LiNbO3 Waveguide Chips on Si Substrates by Low-Temperature Solid-State Bonding of Au, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 10.1109/JSTQE.2010.2093871, 17, 3, 652-658, 2011.05.
41. 竹沢由高, 重藤暁津, 赤池正剛, 多喜川良, 環境調和型実装技術(エレクトロニクス実装技術の現状と展望), エレクトロニクス実装学会誌, 12, 1, 34-38, 2009.01.
42. Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Renshi Sawada, Room-Temperature Bonding of Vertical-Cavity Surface-Emitting Laser Chips on Si Substrates Using Au Microbumps in Ambient Air, APPLIED PHYSICS EXPRESS, 10.1143/APEX.1.112201, 1, 11, 2008.11.
43. Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi, Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air, IEICE TRANSACTIONS ON ELECTRONICS, 10.1093/ietele/e90-c.1.145, E90C, 1, 145-146, 2007.01.

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